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Akshay K. Naik

Publications and source records attributed to Akshay K. Naik.

5 recordsLinked to original sources

Quantitative Fabrication-Error Reduction in Optomechanical Crystal using Proximity Error Correction

We demonstrate the use of proximity effect correction (PEC) in electron beam lithography (EBL) to improve the fabrication fidelity of dense photonic crystal structures. Monte Carlo simulations were employed to model electron scattering and determine the proximity function of the resist-substrate system. Based on this, a computational dose-modification scheme was implemented to compensate for nonuniform energy deposition during exposure. In addition, SEM-based image analysis was performed to quantitatively assess structural differences among uniformly exposed, manually dose-modified, and PEC-fabricated devices by comparing extracted geometries with the reference GDS design. The analysis revealed reduced dimensional deviation, improved spatial uniformity, and lower edge roughness in the PEC-corrected structures. These improvements resulted in a significantly enhanced optical quality factor in the fabricated photonic crystal cavities.

physics.optics

Control Over Fano Parameter in Grating and One-Dimensional Photonic Crystal Cavity

Fano resonances are sharp asymmetrical spectral peaks which are now ubiquitous in nanophotonics. The high sensitivity of these resonances to system parameter has been exploited to improve light matter interaction and in applications such as sensing, filters and on-chip processing. The ability to dynamically change the Fano slope and spectral phase would enable optimization of the device parameters post fabrication for various applications. Here we demonstrate such a control over the Fano resonance in a one-dimensional photonics crystal cavity integrated on a silicon waveguide -grating platform. In our device, Fano resonance arises due to interference between cavity mode and an oscillatory background due to grating coupler. The dynamics tuning of Fano asymmetric parameter is achieved using thermos-optic effect in silicon. We experimentally tune the Fano parameter from ~-3.2 to +1.7 achieving a highest extinction ratio of 21.6 dB and spectral slope of 108dB/nm. All the above is achieved in an ultra-compact design with simple fabrication and with multiple cavities or feedback elements. The steep slope offers distinct advantage over conventional cavity for sensing and modulation applications and the tunability enables dynamic control over gain, dynamic range, bandwidth and noise coupling.

physics.optics

Engineering MoS$_2$-MoTe$_2$ Heterojunctions: Enhancing Piezoresponse and Rectification

Piezoelectric materials play a vital role in energy harvesting, piezotronics and various self-powered sensing applications. The piezoelectric strength of 2D materials is limited by the carrier charge screening, leading to reduced open circuit voltages and poor piezotronic performances. Reducing the carrier screening in devices is a key requirement to fully utilize the potential of 2D materials for piezoelectric applications. In this work, we demonstrate that lateral heterojunction devices offer an excellent way to improve the piezoelectric open circuit voltages and rectification ratios. Because of the asymmetric contacts with Nickel (Ni) electrodes, the heterojunctions of monolayer(1L) MoS$_2$ and MoTe$_2$ form a hybrid Schottky/p-n diode. We demonstrate a rectification ratio of more than 5000 without electrostatic gating. We observed that devices with higher junction potentials exhibit piezoelectric open-circuit voltages exceeding 1V and a peak power density of 690 mW/m$^2$. The output characteristics reveal a trade-off between open circuit voltages and rectification ratios. These findings and the role of built-in (cut-in) voltages in energy harvesting provide valuable insights for the design of piezotronic junctions to achieve high piezoelectric output and/or rectification ratios. Design aspects of heterojunctions discussed in this manuscript can be applied to other emerging nanomaterials.

cond-mat.mes-hall

Single-particle Mass Spectrometry with arrays of frequency-addressed nanomechanical resonators

One of the main challenges to overcome to perform nanomechanical Mass Spectrometry (NEMS-MS) analysis in a practical time frame stems from the size mismatch between the analyte beam and the extremely small nanomechanical detector area. We report here the demonstration of NEMS-MS with arrays of 20 individually addressed nanomechanical resonators where the number of inputs-outputs for the whole array is the same as that of a single resonator. While all resonators within an array are interconnected via two metal levels, each resonator is designed with a distinct resonance frequency which becomes its individual address. In order to perform single-particle Mass Spectrometry, the resonance frequencies of the two first modes of each NEMS within an array are monitored simultaneously. Using such an array, mass spectra of metallic aggregates in the MDa range are acquired with more than one order of magnitude improvement in analysis time due to the increase in capture cross section compared to individual resonators. A 20 NEMS array is probed in 150ms with the same mass limit of detection as a single resonator. Spectra acquired with a conventional Time- of-Flight (TOF) mass spectrometer in the same system show excellent agreement. As individual information for each resonator within the array is retained, the array becomes a particle imager, each resonator acting as a pixel. With this technique, we demonstrate how Mass Spectrometry Imaging (MSI) at the single particle level becomes possible by mapping a 4cm-particle beam in the MDa range and above.

physics.ins-det

Frequency fluctuations in silicon nanoresonators

Frequency stability is key to performance of nanoresonators. This stability is thought to reach a limit with the resonator's ability to resolve thermally-induced vibrations. Although measurements and predictions of resonator stability usually disregard fluctuations in the mechanical frequency response, these fluctuations have recently attracted considerable theoretical interest. However, their existence is very difficult to demonstrate experimentally. Here, through a literature review, we show that all studies of frequency stability report values several orders of magnitude larger than the limit imposed by thermomechanical noise. We studied a monocrystalline silicon nanoresonator at room temperature, and found a similar discrepancy. We propose a new method to show this was due to the presence of frequency fluctuations, of unexpected level. The fluctuations were not due to the instrumentation system, or to any other of the known sources investigated. These results challenge our current understanding of frequency fluctuations and call for a change in practices.

cond-mat.mes-hall