arXiv subjects

Akshay Singh

Publications and source records attributed to Akshay Singh.

At least 19 recordsLinked to original sources

arXiv2026

Characterizing the Scale Height and Filamentary Structure of Radiatively Cooled MADs

Radiative cooling can strongly influence the structure and dynamics of black hole accretion disks. Here, we perform general relativistic magnetohydrodynamic (GR-MHD) simulations of magnetically arrested disks (MADs) around a non-spinning black hole. Radiative cooling is consistently included in the simulations and its intensity is scaled by the mass accretion rate ranging from $10^{-7}$ to $10^{-4} \dot{M}_{\mathrm{Edd}}$. Considering synchrotron and bremsstrahlung emission, we quantify how radiative losses modify the disk structure and the accretion dynamics. In the inner MAD disk regions, accumulation of magnetic field regulates gas accretion, enforcing the gas into a discrete interchange-driven filamentary structure. We identify, both analytically and numerically, a transition mass accretion rate above which radiative cooling becomes faster than the heating, which is assumed to occur via local coupling to the magnetic field. Above this mass accretion rate, cooling substantially reduces the gas thermal pressure, leading to considerably thinner and denser accretion filaments, and a substantial increase in radiative efficiency, relative to lower accretion rates. We show that under these conditions, conventional measures of the disk scale height become misleading in MAD flows. We therefore introduce an alternative definition based on the polar position of the density maximum, which more robustly characterizes the filamentary structure of the disks in the presence of strong magnetic fields and cooling.

astro-ph.HE↗

arXiv2026

Oxygen as a dual function regulator in MoS2 CVD synthesis: enhancing precursor evaporation while modulating reaction kinetics

Molybdenum disulfide (MoS2) is a promising 2D transition metal dichalcogenide (TMD) for optoelectronics and quantum technology applications, but faces challenges in scalable synthesis and defect engineering. Oxygen-assisted chemical vapor deposition (O-CVD), which introduces in-situ oxygen during growth, shows excellent potential in resolving both issues at once. Although co-flowing oxygen shows improvement in growth, the underlying mechanistic role of oxygen remains unclear. In this work, a combination of oxygen dosing experiments, density functional theory (DFT) calculations, computational fluid dynamics (CFD) simulations, and ab initio molecular dynamics (AIMD) simulations, uncover the dual role of oxygen in O-CVD. Firstly, AIMD reveals that oxygen increases MoO3 sublimation and enhances Mo3O9 supply. Concomitantly, DFT reveals that sulphur oxides, due to their bulkier nature than pure S2, limit the formation of reactive MoS6 intermediates. Subsequently, by experimentally varying the oxygen flow-interval, flow-rate, and flow-time, and correlating them with CFD simulations, we decouple oxygen's roles in source-poisoning prevention (i.e. MoO3 evaporation) and growth regulation. We find that maintaining a low sulphur-to-oxygen (S:O2) ratio at the MoO3 boat and substrate during nucleation, and a high S:O2 ratio at the substrate during growth is the key to obtaining large-area high-quality monolayer MoS2, confirmed by our optical measurements. Based on our understanding, we present a kinetic phase diagram for MoS2 synthesis, which will enable controlled oxygen dosing as a tuning parameter for scalable, defect-controlled monolayer MoS2 synthesis.

cond-mat.mtrl-sci↗

arXiv2026

Exciton-Selective Phonon Coupling in a Lead Halide Perovskite

Exciton-phonon interactions govern the optical response of semiconductors, yet disentangling multiple coupling channels in lead halide perovskites remains challenging. We investigate CsPbBr3 microcrystals using photoluminescence, Raman and reflectance spectroscopy at low temperature, revealing the simultaneous presence of high-energy and Rashba excitons, each accompanied by distinct phonon replica series. High-energy exciton replicas are uniquely spaced by approximately 9 meV, whereas Rashba exciton replicas exhibit a characteristic approximately 6 meV spacing, indicating the specificity of the exciton-phonon coupling. Unsupervised machine learning applied to a large low-temperature photoluminescence dataset reveals these replica features are prevalent. With increasing temperature, replica features broaden and merge, evolving into a dominant longitudinal optical phonon coupling regime at room temperature. This work establishes direct spectroscopic evidence for concurrent, exciton-specific phonon coupling within a single material, offering new pathways to engineer light-matter interactions for optoelectronic and phonon-photon-based quantum device applications.

cond-mat.mes-hall↗

arXiv2026

Gate-tuneable single-photon emitters in WSe2 monolayer created via AFM nanoindentation on rigid SiO2/Si substrates

Single-photon emitters (SPEs) hosted by two-dimensional (2D) semiconducting materials are envisioned for next-generation quantum applications. However, SPE creation in 2D semiconductors on rigid substrates like SiO2/Si via nanoindentation is a technological gap, critical for interfacing SPEs with photonic circuits and cavities. Here, we report a protocol for deterministically creating SPEs in monolayer WSe2 on SiO2/Si substrates using a sharp diamond AFM (atomic force microscope) tip. A displacement-controlled indentation process is developed, allowing indent depths > 150 nm necessary for creating SPEs. Sharp defect peaks (~200 {\mu}eV) are observed in cryogenic (4K) photoluminescence (PL) spectrum at nanoindented sites and are stable upto ~ 120K. 76% of sites exhibit sharp defect-bound peaks confirmed by power-dependent, temperature-dependent, and time-resolved PL (TRPL). AFM and PL mapping link these peaks to indent periphery. The peaks show sub-linewidth spectral jitter, no blinking, and single-photon nature in second-order autocorrelation measurements. SPEs can be switched on/off, and background emissions suppressed using electrical gating. Gate-voltage dependent TRPL indicate that SPE dynamics can be tuned, depending on nature of SPE, pointing the way to higher-purity SPEs. Our work is directly applicable to other 2D materials and photonic circuit/cavity compatible rigid substrates and is a significant step for scalable SPE technologies.

cond-mat.mes-hall↗

arXiv2026

In-Substrate Imaging of Diamond hBN FET Current via Widefield Quantum Diamond Microscopy

We demonstrate widefield magnetic imaging of current flow in hydrogen terminated diamond field effect transistors (FETs) through in-substrate nitrogen vacancy (NV) centers. Hydrogen termination of the diamond surface induces a two dimensional hole gas (2DHG), while an ensemble of near surface NV centers located $ \sim 1~\mu m$ below the surface enables noninvasive magnetic imaging of current flow with micrometer scale spatial resolution. The FETs were electrically characterized over a range of drain source biases $V_{ds}= 0$ to $-15V$ and gate voltages,$V_{gs}= +3$ to $-9V$ followed by in situ widefield NV magnetometry during device operation. Magnetic field maps and reconstructed current density distributions directly visualize current injection at the source drain contacts and transport beneath the hBN gated channel. Magnetic field maps reveal current density variations in the channel region owing to non-uniformities or defects in the gate dielectric. In addition, we observe a pronounced enhancement of the drain current ($\sim 600-900 \mu A$) and a shift in the apparent threshold voltage during laser illumination, reflecting photo induced changes in channel electrostatics. By correlating gate dependent magnetic images with simultaneous electrical measurements, we directly link spatial current distributions to FET transfer characteristics, providing new insight into buried interface transport and non-uniform gating effects in the transistor channel. As the methodology is compatible with top gated FETs, it can be used to map channel current distributions with micrometer resolution in emerging channel materials, such as 2D materials and wide bandgap channels, and establish widefield NV magnetometry as a powerful platform for probing charge transport in transistors and Van der Waals dielectric heterostructures.

cond-mat.mes-hall↗

arXiv2026

Signatures of moir\'e intralayer biexcitons and exciton-phason coupling in WSe2/WS2 heterostructures

Interactions among electronic and lattice degrees-of-freedom are foundational to various phases in condensed-matter physics, yet the dynamic interplay between excitonic and phononic quasiparticles represents an equivalent, underexplored frontier. Moir\'e superlattices provide an ideal platform for realizing these interactions by offering localized intralayer excitons (IALX) and ultralow-energy collective lattice modes, such as phasons. Here, by optically suppressing ultrafast charge-transfer (CT) to interlayer excitons in WSe2/WS2 heterostructures, we uncover dynamics of moir\'e IALX revealing long lifetimes ({\tau} > 1000 ps) arising from localized Wannier and in-plane CT nature. We then observe moir\'e intralayer intervalley biexcitons with binding energy ~ 16 meV, with long lifetimes due to moir\'e confinement. Furthermore, we find time-domain signatures of strong coupling between moir\'e-IALX and ~ 10 micro-eV phasons, evidenced as twist-angle-dependent GHz oscillations in IALX dynamics. Our findings establish moir\'e superlattices as interacting hybrid quantum systems and for engineering non-equilibrium phenomena, as well as for GHz-scale optoelectronics.

cond-mat.mes-hall↗

arXiv2025

Quantum siphoning of finely spaced interlayer excitons in reconstructed MoSe2/WSe2 heterostructures

Atomic reconstruction in twisted transition metal dichalcogenide heterostructures leads to mesoscopic domains with uniform atomic registry, profoundly altering the local potential landscape. While interlayer excitons in these domains exhibit strong many-body interactions, extent and impact of quantum confinement on their dynamics remains unclear. Here, we reveal that quantum confinement persists in these flat, reconstructed regions. Time-resolved photoluminescence spectroscopy uncovers multiple, finely-spaced interlayer exciton states (~ 1 meV separation), and correlated emission lifetimes spanning sub-nanosecond to over 100 nanoseconds across a 10 meV energy window. Cascade-like transitions confirm that these states originate from a single potential well, further supported by calculations. Remarkably, at high excitation rates, we observe transient suppression of emission followed by gradual recovery, a process we term "quantum siphoning". Our results demonstrate that quantum confinement and competing nonlinear dynamics persist beyond the ideal moire paradigm, potentially enabling applications in quantum sensing and modifying exciton dynamics via strain engineering.

cond-mat.mes-hall↗

arXiv2025

An unusual type-I X-ray burst from the neutron star X-ray binary IGR J17591-2342: a double-photospheric-radius-expansion burst?

Type-I X-ray bursts observed from neutron stars originate from intermittent unstable thermonuclear burning of accreted matter on these stars. Such bursts, particularly those reaching the Eddington luminosity and having a temporary photospheric radius-expansion due to radiation pressure, provide a testbed to study nuclear fusion processes in intense radiation, gravity, and magnetic fields. Here, we investigate time-resolved spectroscopic properties of a type-I burst from the accretion-powered millisecond X-ray pulsar IGR J17591-2342. Our basic spectral model includes an absorbed blackbody to describe the burst emission and an absorbed power law to represent the non-burst emission. The blackbody normalisation shows two consecutive humps aligned with blackbody temperature dips during the burst. Such an unusual behaviour could imply two consecutive photospheric radius-expansion events during the same burst or a systematic metallicity evolution in the neutron star atmosphere. However, our spectral analysis suggests the latter option is less likely to be happening for IGR J17591-2342. The novel former option implies that sufficient fuel survived after the first photospheric radius-expansion event to power a second similar event a few seconds later, challenging the current theoretical understanding. If confirmed, the double photospheric radius-expansion event observed in IGR J17591-2342 suggests the possibility of avoiding photospheric expansion at luminosities exceeding Eddington. Mechanisms such as temporary enhancement of the magnetic field by convection and confinement of the plasma could be invoked to explain the peculiar behaviour of the source.

astro-ph.HE↗

arXiv2025

Anisotropic In-plane Thermal Conductivity of Freestanding Few-layer ReS2

Rhenium disulfide (ReS2) is a low-symmetry transition metal dichalcogenide (TMDC) exhibiting strong in-plane anisotropy, weak interlayer coupling, and stacking-dependent physical properties. While anisotropic thermal conductivity has been reported in bulk ReS2, experimental studies on stackingdependent thermal conductivity and its thickness evolution in the few-layer regime remain largely unexplored. Here, we have extracted the thermal conductivity of freestanding, few-layer ReS2 samples (thickness < 10 nm) using polarization-resolved optothermal Raman thermometry after correcting for polarization dependent absorbance. All measured ReS2 samples show pronounced in-plane anisotropic thermal conductivity. Notably, the ~3.5 nm AA-stacked flake shows higher thermal conductivity than the AB-stacked flake of the same thickness, highlighting the influence of stacking order on phonon transport. The in-plane thermal conductivity displays a non-monotonic dependence on thickness over the 2.5 to 8 nm range which is supported by density functional theory (DFT) calculations. These findings provide key insight into anisotropic phonon transport in low-symmetry 2D materials and highlight the potential of few-layer ReS2 for nanoscale thermal management and thermoelectric applications.

cond-mat.mes-hall↗

arXiv2025

Tailored Vapor Deposition Unlocks Large-Grain, Wafer-Scale Epitaxial Growth of 2D Magnetic CrCl3

Two-dimensional magnetic materials (2D-MM) are an exciting playground for fundamental research, and for spintronics and quantum sensing. However, their large-grain large-area synthesis using scalable vapour deposition methods is still an unsolved challenge. Here, we develop a tailored approach for centimetre-scale growth of semiconducting 2D-MM CrCl3 films on mica substrate, via physical vapour transport deposition. A controlled synthesis protocol, enabled via innovations concerning light management, very-high carrier-gas flow, precursor flux, and oxygen/moisture removal, is critical for wafer-scale growth. Optical, stoichiometric, structural, and magnetic characterization identify crystalline, phase-pure 2D-MM CrCl3. Substrate temperature tunes thickness of films from few-layers to tens of nanometres. Further, selective-area growth and large-area transfer are demonstrated. Substrate-dependent growth features are explained by density functional theory and state-of-the-art machine learning interatomic potential-based atomic-scale simulations. This scalable vapour deposition approach can be applied for growth of several 2D-MM, and low growth temperature (~500 C) will enable creation of hybrid heterostructures.

cond-mat.mtrl-sci↗

arXiv2024

Radiative cooling changes the dynamics of magnetically arrested disks

We studied magnetically arrested disks (MAD) around rotating black holes (BH), under the influence of radiative cooling. We introduce a critical value of the mass accretion rate $\dot M_{\rm crit}$ for which the cooling by the synchrotron process efficiently radiates the thermal energy of the disk. We find $\dot M_{\rm crit} \approx 10^{-5.5} \dot M_{\rm Edd}$, where $\dot M_{\rm Edd}$ is the Eddington mass accretion rate. The normalization constant depends on the saturated magnetic flux and on the ratio of electron to proton temperatures, but not on the BH mass. We verify our analytical estimate using a suite of general relativistic magnetohydrodynamic (GRMHD) simulations for a range of black hole spin parameters $a \in \{ -0.94, -0.5, 0, 0.5, 0.94 \}$ and mass accretion rates ranging from $10^{-7}\dot M_{\rm Edd}$ to $10^{-4}\dot M_{\rm Edd}$. We numerically observe that the MAD parameter and the jet efficiency vary by a factor of $\approx 2$ as the mass accretion rate increases above $\dot M_{\rm crit}$, which confirms our analytical result. We further detail how the forces satisfying the quasi-equilibrium of the disk change, with the magnetic contribution increasing as the thermal contribution decreases.

astro-ph.HE↗

arXiv2024

AstroSat timing and spectral analysis of the accretion-powered millisecond X-ray pulsar IGR J17591--2342

IGR J17591--2342, a transient accretion-powered millisecond X-ray pulsar, was discovered during its 2018 outburst. Here, we present a timing and spectral analysis of the source using {\it AstroSat} data of the same outburst. From the timing analysis, we obtain updated values of binary orbital parameters, which reveal an average pulsar spin frequency of 527.4256984(8) Hz. The pulse profiles can be fit well with four harmonically related sinusoidal components with fractional amplitudes of fundamental and second, third, and fourth harmonics as $\sim13$\%, $\sim$6\%, $\sim$0.9\%, $\sim$0.2\%, respectively. The energy-dependent study of pulse profiles in the range of $3-20$ keV shows that the fractional amplitude of both the fundamental and first overtone is consistent with being constant across the considered energy band. Besides, a decaying trend has been observed for both the fundamental and first overtone in the phase-delay versus energy relation resulting in soft X-ray (2.8-3.3 keV) phase lags of $\sim$0.05 and $\sim$0.13 with respect to $\leq 15$ keV photons, for the fundamental and first overtone, respectively. The combined spectra from the Large Area X-ray Proportional Counters and the Soft X-ray Telescope aboard {\it AstroSat} in the $1-18$ keV range can be fit well with an absorbed model consisting of a Comptonization, a blackbody and a Gaussian emission line component yielding as best-fit parameters a blackbody seed photon temperature $kT_{\rm bb}$ $\sim 0.95 \pm 0.03$ keV, and an electron temperature $kT_{\rm e}$ $\sim 1.54 \pm0.03$ keV. The spectral aspects suggest the scattering of photons from the accretion disc or the neutron star's surface.

astro-ph.HE↗

arXiv2024

Quantum light generation with ultra-high spatial resolution in 2D semiconductors via ultra-low energy electron irradiation

Single photon emitters (SPEs) are building blocks of quantum technologies. Defect engineering of 2D materials is ideal to fabricate SPEs, wherein spatially deterministic and quality-preserving fabrication methods are critical for integration into quantum devices and cavities. Existing methods use combination of strain and electron irradiation, or ion irradiation, which make fabrication complex, and limited by surrounding lattice damage. Here, we utilise only ultra-low energy electron beam irradiation (5 keV) to create dilute defect density in hBN-encapsulated monolayer MoS2, with ultra-high spatial resolution (< 50 nm, extendable to 10 nm). Cryogenic photoluminescence spectra exhibit sharp defect peaks, following power-law for finite density of single defects, and characteristic Zeeman splitting for MoS2 defect complexes. The sharp peaks have low spectral jitter (< 200 {\mu}eV), and are tuneable with gate-voltage and electron beam energy. Use of low-momentum electron irradiation, ease of processing, and high spatial resolution, will disrupt deterministic creation of high-quality SPEs.

cond-mat.mes-hall↗

arXiv2024

Optical control of multiple resistance levels in graphene for memristic applications

Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels, achieved by varying the electric field strength or adjusting the duration of optical illumination. Our measurements show that this photodoping of graphene results from the optical excitation of charge carriers from the nitrogen-vacancy levels of hBN to its conduction band, with these carriers then being transferred to graphene by the gate-induced electric field. We develop a quantitative model to describe our observations. Additionally, utilizing our device architecture, we propose a memristive crossbar array for vector-matrix multiplications.

cond-mat.mes-hall↗

arXiv2024

Quantification of 2D Interfaces: Quality of heterostructures, and what is inside a nanobubble

Trapped materials at the interfaces of two-dimensional heterostructures (HS) lead to reduced coupling between the layers, resulting in degraded optoelectronic performance and device variability. Further, nanobubbles can form at the interface during transfer or after annealing. The question of what is inside a nanobubble, i.e. the trapped material, remains unanswered, limiting the studies and applications of these nanobubble systems. In this work, we report two key advances. Firstly, we quantify the interface quality using RAW-format optical imaging, and distinguish between ideal and non-ideal interfaces. The HS-substrate ratio value is calculated using a transfer matrix model, and is able to detect the presence of trapped layers. The second key advance is identification of water as the trapped material inside a nanobubble. To the best of our knowledge, this is the first study to show that optical imaging alone can quantify interface quality, and find the type of trapped material inside spontaneously formed nanobubbles. We also define a quality index parameter to quantify the interface quality of HS. Quantitative measurement of the interface will help answer the question whether annealing is necessary during HS preparation, and will enable creation of complex HS with small twist angles. Identification of the trapped materials will pave the way towards using nanobubbles for novel optical and engineering applications.

cond-mat.mes-hall↗

arXiv2023

Towards a comprehensive understanding of the low energy luminescence peak in 2D materials

An intense low-energy broad luminescence peak (L-peak) is usually observed in 2D transition metal dichalcogenides (TMDs) at low temperatures. L-peak has earlier been attributed to bound excitons, but its origins are widely debated with direct consequences on optoelectronic properties. To decouple the contributions of physisorbed and chemisorbed oxygen, organic adsorbates, and strain on L-peak, we measured a series of monolayer (ML) MoS2 samples (mechanically exfoliated (ME), synthesized by oxygen-assisted chemical vapour deposition (O-CVD), hexagonal boron nitride (hBN) covered and hBN encapsulated). Emergence of L-peak below 150 K and saturation of photoluminescence (PL) intensity with laser power confirm bound nature of L-peak. Anomalously at room temperature, O-CVD samples show high A-exciton PL (c.f. ME), but reduced PL at low temperatures, which is attributed to strain-induced direct-to-indirect bandgap change in low defect O-CVD MoS2. Further, L-peak redshifts dramatically ~ 130 meV for O-CVD samples (c.f. ME). These observations are fully consistent with our predictions from density functional theory (DFT) calculations, considering effects of both strain and defects, and supported by Raman spectroscopy. In ME samples, charged oxygen adatoms are identified as thermodynamically favourable defects which can create in-gap states, and contribute to the L-peak. The useful effect of hBN is found to originate from reduction of charged oxygen adatoms and hydrocarbon complexes. This combined experimental-theoretical study allows an enriched understanding of L-peak and beneficial impact of hBN, and motivates collective studies of strain and defects with direct impact on optoelectronics and quantum technologies.

cond-mat.mtrl-sci↗

arXiv2023

Controlled defect production in monolayer MoS2 via electron irradiation at ultralow accelerating voltages

Control on spatial location and density of defects in 2D materials can be achieved using electron beam irradiation. Conversely, ultralow accelerating voltages (less than or equal to 5kV) are used to measure surface morphology, with no expected defect creation. We find clear signatures of defect creation in monolayer (ML) MoS2 at these voltages. Evolution of E' and A1' Raman modes with electron dose, and appearance of defect activated peaks indicate defect formation. To simulate Raman spectra of MoS2 at realistic defect distributions, while retaining density-functional theory accuracy, we combine machine-learning force fields for phonons and eigenmode projection approach for Raman tensors. Simulated spectra agree with experiments, with sulphur vacancies as suggested defects. We decouple defects, doping and carbonaceous contamination using control (hBN covered and encapsulated MoS2) samples. We observe cryogenic PL quenching and defect peaks, and find that carbonaceous contamination does not affect defect creation. These studies have applications in photonics and quantum emitters.

cond-mat.mes-hall↗

arXiv2022

Tuning exciton complexes in twisted bilayer WSe2 at intermediate misorientation

Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist angles > 15 degrees) bilayers (BLs) offer a unique opportunity to tune excitonic behavior within these concurrent physical mechanisms but are seldom studied. In this paper, we measure many-body excitonic complexes in monolayer (ML), natural BL, and tBL WSe2. Neutral biexciton (XX) is observed in tBL, while being undetected in nonencapsulated ML and BL, demonstrating unique effects of disorder screening in tBLs. The XX as well as charged biexciton are robust to thermal dissociation and are controllable by electrostatic doping. Vanishing of momentum-indirect IL excitons with increasing electron doping is demonstrated in tBL, resulting from the near alignment of Q-K and K-K valleys. Intermediate misorientation samples offer a high degree of control of excitonic complexes while offering possibilities for studying exciton-phonon coupling, band alignment, and screening.

physics.optics↗