arXiv subjects

Alain Dijkstra

Publications and source records attributed to Alain Dijkstra.

5 recordsLinked to original sources

arXiv2026

Valley polarization of moir\'e interlayer exciton complexes driven by many-body interactions

Localized interlayer excitons (IX) in moir\'e transition metal dichalcogenide heterostructures can both probe and participate in many-body states hosted by the moir\'e superlattice. When the IX density is small compared to the moir\'e lattice density, the formation of incompressible charge crystals at fractional electronic moir\'e fillings modifies exciton-charge scattering, leading to enhanced lifetimes in photoluminescence (PL) measurements. At high IX densities, the exciton dynamics are altered by the emergence of an excitonic Mott insulator and the formation of doubly-occupied sites (IXX). Here, we investigate the IX PL lifetime and valley polarization in an R-type $\mathrm{WSe_2}$/$\mathrm{WS_2}$ bilayer across a wide range of IX and charge densities. While previous studies reported a decrease of polarization in time-integrated measurements in charge-incompressible phases, our results show that this arises not from enhanced intervalley scattering, but from a dilution of the valley polarization by the dramatic enhancement of IX lifetimes. At high excitation densities, we probe the dynamics of the IXX and show that despite the nominal antiparallel valley configuration of the two constituent excitons, a strong, anomalous valley polarization develops as the IXX population decays. Our results shed light on the complex exciton and valley dynamics of IX and demonstrate that they are strongly modified by the rich many-body physics of moir\'e heterobilayers.

cond-mat.mes-hall↗

arXiv2025

Ten-valley excitonic complexes in charge-tunable monolayer WSe$_2$

Excitons dominate the optical response of two-dimensional (2D) semiconductors. Strong interactions produce peculiar excitonic complexes, which provide a testing ground for exciton and quantum many-body theories. Here, we report a hitherto unobserved many-body exciton that emerges upon filling both the K and Q valleys of WSe$_2$. We optically probe the exciton landscape using charge-tunable devices with unusually thin dielectrics that facilitate doping up to several $10^{13}$ cm$^{-2}$. We observe the emergence of the thermodynamically stable complex when 10 valleys are electrostatically filled. We gain insight into its physics using magneto-optical measurements. Our results are well-described by a model where the number of distinguishable Fermi seas interacting with the photoexcited electron-hole pair defines the complex's behavior. In addition to expanding the repertoire of excitons in 2D semiconductors, this complex could probe the limit of exciton models and answer open questions about screened Coulomb interactions in 2D semiconductors.

cond-mat.mes-hall↗

arXiv2024

Gate-tunable Bose-Fermi mixture in a strongly correlated moir\'e bilayer electron system

Quantum gases consisting of species with distinct quantum statistics, such as Bose-Fermi mixtures, can behave in a fundamentally different way than their unmixed constituents. This makes them an essential platform for studying emergent quantum many-body phenomena such as mediated interactions and unconventional pairing. Here, we realize an equilibrium Bose-Fermi mixture in a bilayer electron system implemented in a WS$_{2}$/WSe$_{2}$ moir\'e heterobilayer with strong Coulomb coupling to a nearby moir\'e-free WSe$_{2}$ monolayer. Absent the fermionic component, the underlying bosonic phase manifests as a dipolar excitonic insulator. By injecting excess charges into it, we show that the bosonic phase forms a stable mixture with added electrons but abruptly collapses upon hole doping. We develop a microscopic model to explain the unusual asymmetric stability with respect to electron and hole doping. By studying the Bose-Fermi mixture via monitoring excitonic resonances from both layers, we demonstrate gate-tunability over a wide range in the boson/fermion density phase space, in excellent agreement with theoretical calculations. Our results further the understanding of phases stabilized in moir\'e bilayer electron systems and demonstrate their potential for exploring the exotic properties of equilibrium Bose-Fermi mixtures.

cond-mat.str-el↗

arXiv2020

Mid-infrared emission and absorption in strained and relaxed direct bandgap GeSn semiconductors

By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0 {\mu}m upon post-growth strain relaxation in layers with uniform Sn content of 17 at.%. The fundamental mechanisms governing the optical emission are discussed based on temperature-dependent photoluminescence, absorption measurements, and theoretical simulations. Regardless of strain and composition, these analyses confirm that single-peak emission is always observed in the probed temperature range of 4-300 K, ruling out defect- and impurity-related emission. Moreover, carrier losses into thermally-activated non-radiative recombination channels are found to be greatly minimized as a result of strain relaxation. Absorption measurements validate the direct band gap absorption in strained and relaxed samples at energies closely matching photoluminescence data. These results highlight the strong potential of GeSn semiconductors as versatile building blocks for scalable, compact, and silicon-compatible mid-infrared photonics and quantum opto-electronics.

physics.app-ph↗

arXiv2019

Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge/GeSn core/shell nanowires by correlating the experimental observations with a theoretical interpretation based on a multi-scale approach. We show that the cross-sectional morphology of Ge/GeSn core/shell nanowires changes from hexagonal to dodecagonal upon increasing the supply of the Sn precursor. This transformation strongly influences the Sn distribution as a higher Sn content is measured under the {112} growth front. Ab-initio DFT calculations provide an atomic-scale explanation by showing that Sn incorporation is favored at the {112} surfaces, where the Ge bonds are tensile-strained. A phase-field continuum model was developed to reproduce the morphological transformation and the Sn distribution within the wire, shedding light on the complex growth mechanism and unveiling the relation between segregation and faceting. The tunability of the photoluminescence emission with the change in composition and morphology of the GeSn shell highlights the potential of the core/shell nanowire system for opto-electronic devices operating at mid-infrared wavelengths.

cond-mat.mtrl-sci↗