arXiv subjects

Alan T. K. Godfrey

Publications and source records attributed to Alan T. K. Godfrey.

5 recordsLinked to original sources

arXiv2026

Towards Atom-by-Atom Fabrication: Mechanosynthetic donation and abstraction

Enabled by inverted-mode scanning tunneling microscopy (IM-STM) and the use of functionalized molecular tools, we demonstrate positionally-controlled mechanosynthetic addition (donation) of carbon and subtraction (abstraction) of silicon atoms on a model build site: atomically clean and crystalline Si(100). The resulting structures represent the first demonstrations of an emerging ability to manipulate radical chemistry with positional control of specific atoms and moieties in 3D. Furthermore, by comparing the behavior of molecular tools designed for atomic donation versus abstraction, we highlight general principles governing molecular tool design for selective and reliable mechanosynthetic functionality.

cond-mat.mtrl-sci↗

arXiv2026

Atomically precise mechanosynthesis of carbon structures on hydrogenated Si(100) by inverted-mode STM

The ability to build atomically precise structures on surfaces with complete control over both atomic placement and chemical bonding remains a central challenge in nanoscale fabrication. Here, we demonstrate simultaneous spatial and chemical control over the mechanosynthetic fabrication of carbon structures. Using inverted-mode STM, C$_2$ units are donated from surface-deposited molecules to pre-patterned reactive sites on a hydrogen-passivated Si(100) surface. We demonstrate single-site C$_2$ donation, spatially patterned multi-site C$_2$ donation, and the stepwise assembly of polyyne structures through successive C-C bond formation. Together, these results establish controlled mechanosynthetic donation as a foundational capability for programmable atomically precise fabrication.

cond-mat.mtrl-sci↗

arXiv2025

Molecular Tools for Non-Planar Surface Chemistry

Scanning probe microscopy (SPM) investigations of on-surface chemistry on passivated silicon have only shown in-plane chemical reactions, and studies on bare silicon are limited in facilitating additional reactions post-molecular-attachment. Here, we enable subsequent reactions on Si(100) through selectively adsorbing 3D, silicon-specific "molecular tools". Following an activation step, the molecules present an out-of-plane radical that can function both to donate or accept molecular fragments, thereby enabling applications across multiple scales, e.g., macroscale customizable silicon-carbon coatings or nanoscale tip-mediated mechanosynthesis. Creation of many such molecular tools is enabled by broad molecular design criteria that facilitate reproducibility, surface specificity, and experimental verifiability. These criteria are demonstrated using a model molecular tool tetrakis(iodomethyl)germane ($Ge(CH_{2}I)_{4}$; TIMe-Ge), with experimental validation by SPM and X-ray photoelectron spectroscopy (XPS), and theoretical support by density functional theory (DFT) investigations. With this framework, a broad and diverse range of new molecular engineering capabilities are enabled on silicon.

cond-mat.mtrl-sci↗

arXiv2020

High-harmonic generation in metallic titanium nitride

High-harmonic generation is the cornerstone of nonlinear optics. It has been demonstrated in a wide range of crystalline systems including dielectrics, semiconductors, and semi-metals, as well as in gases, leaving metals out due to their low damage threshold. Here, we report on the high-harmonic generation in metallic titanium nitride (TiN) films. TiN is a refractory plasmonic metal, known for its high melting temperature and laser damage threshold, with optical properties similar to those of gold. We show that TiN can withstand laser pulses with peak intensities as high as 13 TW/cm$^2$, one order of magnitude higher than gold, enabling the emission of intraband harmonics up to photon energies of 11 eV. These harmonics can pave the way for compact and efficient plasmonic devices producing vacuum ultraviolet (VUV) frequency combs. Through numerical calculations and experimental studies, we show that the intensity scaling and angular anisotropy of the emitted VUV radiation stem from the anisotropic conduction band structure of TiN, thus confirming its intraband origin.

physics.optics↗

arXiv2020

Surface Adhesion of Back-Illuminated Ultrafast Laser-Treated Polymers

We report a decreased surface wettability when polymer films on a glass substrate are treated by ultra-fast laser pulses in a back-illumination geometry. We propose that back-illumination through the substrate confines chemical changes beneath the surface of polymer films, leaving the surface blistered but chemically intact. To confirm this hypothesis, we measure the phase contrast of the polymer when observed with a focused ion beam. We observe a void at the polymer-quartz interface that results from the expansion of an ultrafast laser-induced plasma. A modified polymer layer surrounds the void, but otherwise the film seems unmodified. We also use X-ray photoelectron spectroscopy to confirm that there is no chemical change to the surface. When patterned with partially overlapping blisters, our polymer surface shows increased hydrophobicity. The increased hydrophobicity of back-illuminated surfaces can only result from the morphological change. This contrasts with the combined chemical and morphological changes of the polymer surface caused by a front-illumination geometry.

physics.app-ph↗