arXiv subjects

Albert Suceava

Publications and source records attributed to Albert Suceava.

6 recordsLinked to original sources

arXiv2026

Quantum Saturation of the Electro-Optic Effect

Future quantum computing architectures require electro-optic materials that maintain a strong, stable performance at cryogenic temperatures. In conventional electro-optic materials, large electro-optic coefficients are often confined to narrow temperature windows near structural phase transitions, where small changes in temperature lead to large changes in the electro-optic response. Using thermodynamic analysis, phase-field simulations, experimental growth and cryogenic optical measurements we show that quantum fluctuations can be harnessed to overcome this trade-off. By tuning the ferroelectric phase boundaries down to 0 K, quantum fluctuations induce a saturation regime in which a large electro-optic response becomes nearly temperature-independent below 25 K. We demonstrate that the phase boundaries can be tuned through either strain in BaTiO3 or through chemical composition in Ba1-xCaxTiO3, leading to a large, temperature insensitive, cryogenic electro-optic effect comparable to bulk BaTiO3 at room temperature; the performance exceeds BaTiO3-on-Si by over an order of magnitude. These findings establish a general design principle for engineering high-performance electro-optic materials for cryogenic applications.

cond-mat.mtrl-sci↗

arXiv2025

Colossal Cryogenic Electro-Optic Response Through Metastability in Strained BaTiO$_{3}$ Thin Films

The search for thin film electro-optic (EO) materials that can retain superior performance under cryogenic conditions has become critical for quantum computing. Barium titanate thin films show large linear EO coefficients in the tetragonal phase at room temperature, which is severely degraded down to ~200 pm V$^{-1}$ in the rhombohedral phase at cryogenic temperatures. There is immense interest in manipulating these phase transformations and retaining superior EO properties down to liquid helium temperature. Utilizing the thermodynamic theory of optical properties, a large low-temperature EO response is designed by engineering the energetic competition between different ferroelectric phases, leading to a low-symmetry monoclinic phase with a massive EO response. The existence of this phase is demonstrated in a strain-tuned BaTiO$_{3}$ thin film that exhibits a linear EO coefficient of 2516 +/- 100 pm V$^{-1}$ at 5 K, which is an order of magnitude higher than the best reported performance thus far. Importantly, the EO coefficient increases by 100x during cooling, unlike the conventional films, where it degrades. Further, at the lowest temperature, significant higher order EO responses also emerge. These results represent a new framework for designing materials with property enhancements by stabilizing highly tunable metastable phases with strain. Copyright 2025 The Author(s). Advanced Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. (A. Suceava, S. Hazra, A. Ross, et al. "Colossal Cryogenic Electro-Optic Response Through Metastability in Strained BaTiO3 Thin Films." Adv. Mater. (2025): e07564. https://doi.org/10.1002/adma.202507564)

cond-mat.mtrl-sci↗

arXiv2025

Quantitative Nonlinear Optical Polarimetry with High Spatial Resolution

Nonlinear optical microscopy such as in the optical second-harmonic generation (SHG) modality has become a popular tool today for probing materials in the physical and biological sciences. While imaging and spectroscopy are widely used in the microscopy mode, nonlinear polarimetry, which can shed light on materials' symmetry and microstructure, is relatively underdeveloped. This is partly because quantitative analytical modeling of the optical SHG response for anisotropic crystals and films largely assumes low-numerical aperture (NA) focusing of light, where the plane-wave approximation is sufficient. Tight focusing provides unique benefits in revealing out-of-plane polarization responses, which cannot be detected by near-plane-wave illumination at normal incidence. Here, we outline a method for quantitatively analyzing SHG polarimetry measurements obtained under high-NA focusing within a microscope geometry. Experiments and simulations of a variety of standard samples, from single crystals to thin films, are in good agreement, including measured and simulated spatial SHG maps of ferroelectric domains. A solution to the inverse problem is demonstrated, where the spatial distribution of an SHG tensor with unknown tensor coefficient magnitudes is determined by experimentally measured polarimetry. The ability to extract the out-of-plane component of the nonlinear polarization in normal incidence is demonstrated, which can be valuable for high-resolution polarimetry of 2D materials, thin films, heterostructures, and uniaxial crystals with a strong out-of-plane response. Copyright 2025 Optica Publishing Group. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. https://doi.org/10.1364/OPTICA.559060

cond-mat.mtrl-sci↗

arXiv2024

Automated Materials Discovery Platform Realized: Scanning Probe Microscopy of Combinatorial Libraries

Combinatorial materials libraries provide a powerful platform for mapping how physical properties evolve across binary and ternary cross-sections of multicomponent phase diagrams. While synthesis of such libraries has advanced since the 1960s and been accelerated by laboratory automation, their broader utility depends on rapid, quantitative measurements of composition-dependent structures and functionalities. Scanning probe microscopies (SPM), including piezoresponse force microscopy (PFM), offer unique potential for providing these functionally relevant, spatially resolved readouts. Here, we demonstrate a fully automated SPM framework for exploring ferroelectric properties across combinatorial libraries, focusing on binary Sm-doped BiFeO3 (SmBFO) and ternary Al$_{1-x-y}$Sc$_x$B$_y$N (Al,Sc,B)N systems. In SmBFO, automated exploration identifies the known morphotropic phase boundary with enhanced ferroelectric response and reveals a previously unreported double-peak fine structure. In the (Al,Sc,B)N library, ferroelectric behavior emerges at the phase-stability boundary, correlating with variations in morphology and defect concentration. By integrating automated SPM with wavelength-dispersive spectroscopy (WDS) and photoluminescence mapping, we resolve the composition-morphology-defect-property relationships underlying ferroelectric response and demonstrate a pathway toward a multi-tool, high-throughput characterization platform. Finally, we implement Gaussian-process-based single- and multi-objective Bayesian optimization to enable autonomous exploration, highlighting the Pareto front as a powerful framework for balancing competing physical rewards and accelerating data-driven physics discovery.

cond-mat.mtrl-sci↗

arXiv2022

Stoichiometric Control and Optical Properties of BaTiO3 Thin Films Grown by Hybrid MBE

BaTiO3 is a technologically relevant material in the perovskite oxide class with above room temperature ferroelectricity and a very large electro optical coefficient, making it highly suitable for emerging electronic and photonic devices. An easy, robust, straightforward, and scalable growth method is required to synthesize epitaxial BaTiO3 thin films with sufficient control over the film stoichiometry to achieve reproducible thin film properties. Here we report the growth of BaTiO3 thin films by hybrid molecular beam epitaxy. A self regulated growth window is identified using complementary information obtained from reflection high energy electron diffraction, the intrinsic film lattice parameter, film surface morphology, and scanning transmission electron microscopy. Subsequent optical characterization of the BaTiO3 films by spectroscopic ellipsometry revealed refractive index and extinction coefficient values closely resembling those of stoichiometric bulk BaTiO3 crystals for films grown inside the growth window. Even in the absence of a lattice parameter change of BaTiO3 thin films, degradation of optical properties was observed, accompanied by the appearance of a wide optical absorption peak in the infrared spectrum, attributed to optical transitions involving defect states present. Therefore, the optical properties of BaTiO3 can be utilized as a much finer and more straightforward probe to determine the stoichiometry level present in BaTiO3 films.

cond-mat.mtrl-sci↗

arXiv2020

Quantum Sensing of Insulator-to-Metal Transitions in a Mott Insulator

Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, we report on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. We studied the resistive switching properties of both pristine and ion-irradiated VO2 thin film devices by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically-driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs non-thermally, well below the transition temperature. Our results provide the first direct evidence for non-thermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.

cond-mat.mes-hall↗