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Albert Tsui

Publications and source records attributed to Albert Tsui.

3 recordsLinked to original sources

Machine Learning Aided Computational Discovery of Boride Substrates for Borophene Synthesis

Borophene, a monolayer of boron, is distinctive among two-dimensional materials owing to its unique properties, including polymorphism and potential applications in quantum technologies and energy conversion and storage. Nevertheless, its applications are hindered by the strong binding of borophene to metal substrates, which impedes the realization of freestanding borophene. Alternative substrates with tunable binding to borophene are therefore highly desirable. Since boride layers arise during borophene synthesis on metals, borides provide potential alternative substrates for borophene synthesis. In this work, we investigate the binding energies and interactions between borophene and 1356 boride surfaces for two borophene phases (v1/6 and v1/9), using density functional theory (DFT) calculations and machine learning (ML). Importantly, incorporating ML-predicted charge transfer as an input feature to a subsequent ML model enables physics-informed predictions of binding energies. Additional DFT calculations on four representative cases were performed to validate the ML predictions. SHAP analysis reveals that the majority of key descriptors are associated with delocalized electrons, highlighting the role of electronic properties in governing binding strength. Combined DFT and ML screening identifies 65 and 73 promising boride surfaces for the v1/6 and v1/9 phases, respectively. Al- and Ag-based borides, including AlB2 and AgB2, emerge as predominant candidates for both phases. The computationally predicted candidate substrates and the deduced design guidelines provide a charge-transfer-informed ML strategy for substrate selection and represent promising steps toward the experimental realization of freestanding borophene.

cond-mat.mtrl-sci↗

Millimeter-Scale, Atomically Controlled 2D Topological Insulators Revealed by Multimodal Spectroscopy

Quantum spin Hall insulators, or synonymously known as 2D topological insulators, are crucial 2D systems hosting topologically protected edge states. The working temperature of this topological quantum phase is dictated by the inverted bandgap. However, the previously identified large-gap 2D topological insulators are either extremely chemically unstable, or cannot be made with atomistic precision over macroscopic scales. Here, we establish two-quintuple-layer Bi2Te3 and MnBi2Te4/Bi2Te3 heterostructures as atomically controlled, millimeter-scale 2D topological insulators, enabled by precision layer-by-layer growth that yields a carpet-like morphology extending coherently over macroscopic distances. This carpet-like growth mode renders the films amenable to mechanical exfoliation and subsequent wet or dry transfer. Multimodal spectroscopies and microscopies reveal the integer-layer tuned electronic structure of (Bi2Te3)n with excellent agreement to theory. Photon-energy-dependent photoemission and time-resolved photoemission identify band inversion and band dynamics, respectively, while scanning tunneling spectroscopy resolves topological edge states, characteristic of the 2D topological insulator phase. Thickness- and photon-energy-dependent photoemission further validates MnBi2Te4/Bi2Te3 as a robust 2D topological insulator. The large inverted gaps of ~100 meV in (Bi2Te3)2 and ~150 meV in MnBi2Te4/Bi2Te3 suggest operation near ambient temperature. These results define a scalable materials platform for next-generation, low-loss quantum and energy-efficient devices.

cond-mat.mtrl-sci↗

Atomic-resolution structural and spectroscopic evidence for the synthetic realization of two-dimensional copper boride

Since the first realization of borophene on Ag(111), two-dimensional (2D) boron nanomaterials have attracted significant interest due to their polymorphic diversity and potential for hosting solid-state quantum phenomena. Here, we use atomic-resolution scanning tunneling microscopy (STM) and field-emission resonance (FER) spectroscopy to elucidate the structure and properties of atomically thin boron phases grown on Cu(111). Specifically, FER spectroscopy reveals unique charge transfer and electronic states compared to the distinct borophene phases observed on silver, suggesting that the deposition of boron on copper can result in strong covalent bonding characteristic of a 2D copper boride. This conclusion is reinforced by detailed STM characterization of line defects that are consistent with density functional theory (DFT) calculations for atomically thin Cu8B14. This evidence for 2D copper boride is likely to motivate future synthetic efforts aimed at expanding the relatively unexplored family of atomically thin metal boride materials.

cond-mat.mtrl-sci↗