arXiv subjects

Alberto Anadón

Publications and source records attributed to Alberto Anadón.

14 recordsLinked to original sources

arXiv2026

Symmetry Breaking by Interfacial Dead Layers: Observation of Forbidden Self-Induced Spin-Orbit Torque in Symmetric Ferromagnets

Conventionally, spin-orbit torques (SOTs) in ferromagnets require heavy-metal layers or engineered structural asymmetry to break inversion symmetry. In this work, we report the observation of robust, self-generated SOTs in a nominally symmetric, heavy-metal-free MgO/NiFe/MgO trilayer - a geometry where such torques are theoretically forbidden. By combining harmonic Hall measurements with SQUID magnetometry and X-ray photoelectron spectroscopy, we identify the symmetry-breaking origin: a 1.8 nm magnetic dead layer at the bottom interface. Crucially, we demonstrate a quantitative agreement between our data and the drift-diffusion theory predicted by Kim and Lee, yielding a theoretically extracted dead-layer thickness (1.2 nm) which matches structural characterization. Furthermore, density-functional calculations confirm that NiFe possesses sufficient intrinsic spin Hall conductivity to support the observed spin currents. These results reframe the parasitic dead layer as a functional spintronic component, establishing a universal, all-ferromagnetic route to SOTs in standard magnetic heterostructures.

cond-mat.mes-hall↗

arXiv2026

Magnetization reversal mechanism of double-helix nanowires probed by dark-field magneto-optical Kerr effect

Double-helix (DH) nanowires provide a platform to study the influence of geometric chirality on spin chirality. Their three-dimensional (3D) helical architecture and tunable inter-strand coupling enable control of spin chirality, including the stabilization of topological 3D magnetic states such as helical domains and domain walls, topological stray fields, and extended helical vortex/skyrmion tubes. So far, the study of these and other 3D nanostructures is usually confined to a limited number of magnetic microscopy experiments in large facilities. Here, we investigate the reversal mechanism of a single DH nanowire using Dark-Field magneto-optical Kerr effect (DF-MOKE) magnetometry under external 3D magnetic fields. By analyzing the angular dependence of the DF-MOKE signal, we fit the reversal process using established models for domain-wall nucleation and propagation, finding a characteristic behavior similar to that reported for cylindrical nanowires. Micromagnetic simulations indicate that the reversal process goes through nucleation of the helical vortex tube in a curling manner while ptychographic X-ray magnetic circular dichroism data reveal that this helical vortex tube state forms through a mixed nucleation-propagation process. These observations provide a consistent microscopic picture of reversal mediated by a helical vortex tube extending along the nanowire. Our work provides a comprehensive characterization of magnetization reversal in DH nanowires and demonstrates that DF-MOKE magnetometry is effective for probing reversal mechanisms in single 3D nanostructures. This lab-based approach expands the range of accessible experiments beyond large-scale facilities, enabling extensive exploration of the rich spin states supported by 3D nano-geometries.

cond-mat.mes-hall↗

arXiv2025

Spin Accumulation based deep MOKE Microscopy

Magnetic imaging techniques are widespread critical tools used in fields such as magnetism, spintronics or even superconductivity. Among them, one of the most versatile methods is the magneto-optical Kerr effect. However, as soon as light is blocked from interacting with the magnetic layer, such as in deeply buried layers, optical techniques become ineffective. In this work, we present a spin-accumulation based magneto-optical Kerr effect (SA-MOKE) microscopy technique that enables imaging of a magnetic thin-films covered by thick and opaque metallic layers. The technique is based on the generation and detection of transient spin-accumulations that propagate through the thick metallic layer. These spin-accumulation signals are directly triggered and detected optically on the same side, lifting any substrate transparency requirements. The spin-accumulation signals detected on a Cu layer decay with a characteristic length of 60 nm, much longer than the 12 nm optical penetration depth, allowing for detection of magnetic contrast with Cu capping layers up to hundreds of nm. This method should enable magnetic imaging in a wide-range of experiments where the surface of interest is covered by electrodes.

cond-mat.mes-hall↗

arXiv2025

Ultrafast Spin Accumulations Drive Magnetization Reversal in Multilayers

Engineering and controlling heat and spin transport on the femtosecond time-scale in spintronic devices opens up new ways to manipulate magnetization with unprecedented speed. Yet the underlying reversal mechanisms remain poorly understood due to the challenges of probing ultrafast, non-equilibrium spin dynamics. In this study, we demonstrate that typical magneto-optical experiments can be leveraged to access the time evolution of the spin accumulation generated within a magnetic multilayer following an ultrafast laser excitation. Furthermore, our analysis shows that the final magnetic state of the free-layer in a spin-valve is mainly dictated by the ultrafast dynamics of the reference-layer magnetization. Our results disentangle magnetization and spin transport dynamics within a multilayer stack and identify demagnetization and remagnetization-driven spin accumulation as the key mechanism for all-optical switching. These findings establish new design principles for ultrafast spintronic devices based on tailored spin current engineering.

cond-mat.mes-hall↗

arXiv2025

Single-Shot Magnetization Reversal in Ferromagnetic Spin Valves Enabled via Heat Control

We study laser induced ultrafast magnetization reversal in a ferromagnetic spin valve by comparing the effects of direct laser excitation and ultrashort hot electron pulses. A wedged Cu layer is deposited atop the spin valve to tune energy transmission to the magnetic stack for both optical and hot-electron excitation. We demonstrate single shot magnetization reversal of the free layer using hot electron pulses. Moreover, such reversal is achieved even with picosecond laser pulses. The influence of laser fluence, Cu thickness ($t_{\mathrm{Cu}}$), and pulse duration is investigated in detail. Our results indicate that the key factor enabling magnetization reversal is full demagnetization of the free layer, driven by a rapid rise in its electronic temperature achieved via either direct laser or hot electron excitation. This work advances the understanding of ultrafast magnetization reversal via nonlocal heat and spin transport under strongly out of equilibrium conditions.

cond-mat.mtrl-sci↗

arXiv2025

Large spin accumulation signals in ultrafast magneto-optical experiments

Magneto-optical techniques have become essential tools in spintronics, enabling the investigation of spin dynamics in the ultrafast regime. A key challenge in this field has been to accurately isolate the contributions to magneto-optical signals of spin transport phenomena from the local magnetization dynamics. The contribution of transported and accumulated spins was long believed to be orders of magnitude smaller than that of the magnetization and thus previous approaches to disentangle these signals have relied on specific experimental designs, usually including thick metal layers. Here, we present experimental evidence demonstrating that the magneto-optical signal from ultrafast spin accumulations can, under certain conditions, be comparable to or even exceed that of the magnetic layer in a standard ultrafast demagnetization experiment. Our findings provide a new framework for accessing and isolating these spin accumulations, allowing for time and depth dependent probing of transported spin and/or orbital angular momentum.

cond-mat.mes-hall↗

arXiv2024

Energy-efficient picosecond spin-orbit torque magnetization switching in ferro- and ferrimagnetic films

Electrical current pulses can be used to manipulate magnetization efficiently via spin-orbit torques (SOTs). Pulse durations as short as a few picoseconds have been used to switch the magnetization of ferromagnetic films, reaching the THz regime. However, little is known about the reversal mechanisms and energy requirements in the ultrafast switching regime. In this work, we quantify the energy cost for magnetization reversal over 7 orders of magnitude in pulse duration, in both ferromagnetic and ferrimagnetic samples, bridging quasi-static spintronics and femtomagnetism. To this end, we develop a method to stretch picosecond pulses generated by a photoconductive switch by an order of magnitude. Thereby, we can create current pulses from picoseconds to durations approaching pulse width available with commercial instruments. We show that the energy cost for SOT switching decreases by more than an order of magnitude in all samples when the pulse duration enters the picosecond range. We project an energy cost of 9 fJ for a 100 x 100 nm 2 ferrimagnetic device. Micromagnetic and macrospin simulations unveil a transition from a non-coherent to a coherent magnetization reversal with a strong modification of the magnetization dynamical trajectories as pulse duration is reduced. Our results cement the potential for high-speed magnetic spin-orbit torque memories and highlights alternative magnetization reversal pathways at fast time scales.

cond-mat.mtrl-sci↗

arXiv2024

Giant and anisotropic enhancement of spin-charge conversion in double Rashba interface graphene-based quantum system

The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we demonstrate a remarkable thirty-four-fold increase in spin-to-charge current conversion when incorporating a 2D epitaxial graphene monolayer between iron and platinum layers by exploring spin-pumping on-chip devices. Furthermore, we find that the spin conversion is also anisotropic. We attribute this enhancement and anisotropy to the asymmetric Rashba contributions driven by an unbalanced spin accumulation at the differently hybridized top and bottom graphene interfaces, as highlighted by ad-hoc first-principles theory. The improvement in spin-to-charge conversion as well as its anisotropy reveals the importance of interfaces in hybrid 2D-thin film systems opening up new possibilities for engineering spin conversion in 2D materials, leading to potential advances in memory, logic applications, or unconventional computing.

cond-mat.mes-hall↗

arXiv2023

Isotropic spin and inverse spin Hall effect in epitaxial (111)-oriented Pt/Co bilayers

The spin-to-charge current interconversion in bilayers composed of ferromagnetic and nonmagnetic layers with strong spin-orbit coupling has garnered considerable attention due to its exceptional potential in advancing spintronics devices for data storage and logic applications. Platinum (Pt) stands out as one of the most effective materials for generating spin current. While the spin conversion efficiency is isotropic in polycrystalline Pt samples, an ongoing debate persists regarding its dependence on the crystalline direction in single crystalline samples. In this study, we aim to comprehensively evaluate the in-plane anisotropy of spin-charge interconversion using an array of complementary Spin Hall and inverse Spin Hall techniques with both incoherent and coherent excitation. Specifically, we investigate the spin-to-charge interconversion in epitaxial, (111)-oriented, Co/Pt bilayers with low surface roughness, as resulted from x-ray experiments. By varying the thickness of the Pt layer, we gain insights into the spin-charge interconversion in epitaxial Pt and highlight the effects of the interfaces. Our results demonstrate an isotropic behavior within the limits of our detection uncertainty. This finding significantly enhances our understanding of spin conversion in one of the most relevant systems in spintronics and paves the way for future research in this field.

cond-mat.mtrl-sci↗

arXiv2023

Spin transport properties of spinel vanadate-based heterostructures

Spin-orbit coupling and breaking of inversion symmetry are necessary ingredients to enable a pure spin current-based manipulation of the magnetization via the spin-orbit torque effect. Currently, magnetic insulator oxides with non-dissipative characteristics are being explored. When combined with non-magnetic heavy metals, known for their large spin-orbit coupling, they offer promising potential for energy-efficient spin-orbitronics applications. The intrinsic electronic correlations characterizing those strongly correlated oxides hold the promises to add extra control-knobs to the desired efficient spin-wave propagation and abrupt magnetization switching phenomena. Spinel vanadate FeV2O4 (FVO) exhibits several structural phase transitions which are accompanied by an intricate interplay of magnetic, charge and orbital orderings. When grown as a thin film onto SrTiO3, the compressive strain state induces a perpendicular magnetic anisotropy, making FVO-based heterostructures desirable for spin-orbitronics applications. In this study, we have optimised the deposition of stoichiometric and epitaxial Pt/FVO heterostructures by Pulsed Laser Deposition and examined their spin-related phenomena. From angle-dependent magnetotransport measurements, we observed both Anisotropic Magnetoresistance (AMR) and Spin Hall Magnetoresistance (SMR) effects. Our findings show the SMR component as the primary contributor to the overall magnetoresistance, whose high value of 0.12% is only comparable to properly optimized oxide-based systems.

cond-mat.mtrl-sci↗

arXiv2023

Spin-to-charge conversion by spin pumping in sputtered polycrystalline Bi$_x$Se$_{1-x}$

Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin Hall angle. We study the spin-to-charge conversion in Bi$_x$Se$_{1-x}$ using the spin pumping technique coming from the ferromagnetic resonance in a contiguous permalloy thin film. We put a special emphasis on the interfacial properties of the system. Our results show that the spin Hall angle of Bi$_x$Se$_{1-x}$ has an opposite sign to the one of Pt. The charge current arising from the spin-to-charge conversion is, in contrast, lower than Pt by more than one order of magnitude. We ascribe this to the interdiffusion of Bi$_x$Se$_{1-x}$ and permalloy and the changes in chemical composition produced by this effect, which is an intrinsic characteristic of the system and is not considered in many other studies.

cond-mat.mtrl-sci↗

arXiv2023

Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal

Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer deposition (ALD) of ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) directly on graphene (Gr)/Co/heavy metal (HM) epitaxial stacks is investigated via the implementation of several nucleation methods. With an in-situ method employing an Al$_2$O$_3$ layer, the HZO demonstrates a remanent polarization (2Pr) of 19.2 $μC/cm^2$. An ex-situ, naturally oxidized sputtered Ta layer for nucleation produces a film with 2Pr of 10.81 $μC/cm^2$, but a lower coercive field over the stack and switching enduring over subsequent cycles. Magnetic hysteresis measurements taken before and after ALD deposition show strong perpendicular magnetic anisotropy (PMA), with only slight deviations in the magnetic coercive fields due to the HZO deposition process, thus pointing to a good preservation of the single-layer Gr. X-ray diffraction measurements further confirm that the high-quality interfaces demonstrated in the stack remain unperturbed by the ferroelectric deposition and anneal.

cond-mat.mtrl-sci↗

arXiv2022

Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$

In recent years, multifunctional materials have attracted increasing interest for magnetic memories and energy harvesting applications. Magnetic insulating materials are of special interest for this purpose, since they allow the design of more efficient devices due to the lower Joule heat losses. In this context, Ga$_{0.6}$Fe$_{1.4}$O$_3$ (GFO) is a good candidate for spintronics applications, since it can exhibit multiferroicity and presents a spin Hall magnetoresistance similar to the one observed in a yttrium iron garnet (YIG)/Pt bilayer. Here, we explore GFO utilizing thermo-spin measurements in an on-chip approach. By carefully considering the geometry of our thermo-spin devices we are able to quantify the spin Seebeck effect and the spin current generation in a GFO/Pt bilayer, obtaining a value comparable to that of YIG/Pt. This further confirms the promises of an efficient spin current generation with the possibility of an electric-field manipulation of the magnetic properties of the system in an insulating ferrimagnetic material.

cond-mat.mtrl-sci↗