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Alberto Pomar

Publications and source records attributed to Alberto Pomar.

3 recordsLinked to original sources

Spin diffusion length associated to out-of-plane resistivity of Pt thin films in spin pumping experiments

We present a broadband ferromagnetic resonance study of the Gilbert damping enhancement ($\Delta \alpha$) due to spin pumping in NiFe/Pt bilayers. The bilayers, which have negligible interfacial spin memory loss, are studied as a function of the Pt layer thickness ($t_{\text{Pt}}$) and temperature (100-293 K). Within the framework of diffusive spin pumping theory, we demonstrate that Dyakonov-Perel (DP) or Elliot-Yaffet (EY) spin relaxation mechanisms acting alone are incompatible with our observations. In contrast, if we consider that the relation between spin relaxation characteristic time ($\tau_{\text{s}}$) and momentum relaxation characteristic time ($\tau_{\text{p}}$) is determined by a superposition of DP and EY mechanisms, the qualitative and quantitative agreement with experimental results is excellent. Remarkably, we found that $\tau_{\text{p}}$ must be determined by the out-of-plane electrical resistivity ($\rho$) of the Pt film and hence its spin diffusion length ($\lambda_{\text{Pt}}$) is independent of $t_{\text{Pt}}$. Our work settles the controversy regarding the $t_{\text{Pt}}$ dependence of $\lambda_{\text{Pt}}$ by demonstrating its fundamental connection with $\rho$ considered along the same direction of spin current flow. \end{abstract}

cond-mat.mes-hall

Trapping and electrical characterization of single core/shell iron-based nanoparticles in self-aligned nanogaps

We report on the fabrication and measurements of platinum-self-aligned nanogap devices containing cubed iron (core)/iron oxide (shell) nanoparticles (NPs) with two average different sizes (13 and 17 nm). The nanoparticles are deposited by means of a cluster gun technique. Their trapping across the nanogap is demonstrated by comparing the current vs voltage characteristics (I-Vs) before and after the deposition. At low temperature, the I-Vs can be well fitted to the Korotkov and Nazarov Coulomb blockade model, which captures the coexistence of single-electron tunneling and tunnel barrier suppression upon a bias voltage increase. The measurements thus show that Coulomb-blockaded devices can be made with a nanoparticle cluster source, which extends the existing possibilities to fabricate such devices to those in which it is very challenging to reduce the usual NP agglomeration given by a solution method.

physics.app-ph

Competing misfit relaxation mechanisms in epitaxial correlated oxides

Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidences of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic and octahedral tilting energies in La0.7Sr0.3MnO3 epitaxial thin films grown on SrTiO3 substrates. Electronic softening of the Mn - O bonds near the substrate leads to the formation of an interfacial layer clamped to the substrate with strongly degraded magnetotransport properties, i.e. the so-called dead layer, while rigid octahedral tilts become relevant at advanced growth stages without significant effects on charge transport and magnetic ordering.

cond-mat.mtrl-sci