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Alberto Tosato

Publications and source records attributed to Alberto Tosato.

10 recordsLinked to original sources

Activation Steering for Aligned Open-ended Generation without Sacrificing Coherence

Alignment in LLMs is more brittle than commonly assumed: misalignment can be induced by adversarial prompts, benign fine-tuning, emergent misalignment, and goal misgeneralization. Recent evidence suggests that some misalignment behaviors are encoded as linear structure in activation space, making it tractable via activation steering, which could be used as a lightweight runtime defense. We implement three methods: Steer-With-Fixed-Coefficient (SwFC), which applies uniform additive steering, and two novel projection-aware methods, Steer-to-Target-Projection (StTP) and Steer-to-Mirror-Projection (StMP), that use a logistic regression decision boundary to selectively intervene only on tokens whose activations fall below the threshold. We evaluate these methods on two threat models, dishonesty and dismissiveness, using malicious system prompts as a controlled proxy for misalignment. We conduct our experiments on two architectures (Llama-3.3-70B-Instruct and Qwen3.6-27B). All methods substantially recover alignment. StTP and StMP preserve general capabilities (MMLU, MT-Bench, AlpacaEval) better than uniform steering. Finally, we show that our honesty steering generalizes to out-of-distribution scenarios: a single honesty direction extracted from the aligned model significantly raises scores on the MASK benchmark, suppresses deception in multi-agent settings (Among Us), doubles the hidden-behavior discovery rate on AuditBench, and restores honesty in an emergently misaligned model.

cs.AI

Using Landau quantization to probe disorder in semiconductor heterostructures

Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays. Disorder of the parent two-dimensional electron or hole gas is commonly estimated by the critical, percolation-driven density associated with the metal-insulator transition. However, a reliable estimation of the critical density within percolation theory is hindered by the need to measure conductivity with high precision at low carrier densities, where experiments are most difficult. Here, we connect experimentally percolation density and quantum Hall plateau width, in line with an earlier heuristic intuition, and offer an alternative method for characterizing semiconductor heterostructure disorder.

cond-mat.mes-hall

Persistent Instability in LLM's Personality Measurements: Effects of Scale, Reasoning, and Conversation History

Large language models require consistent behavioral patterns for safe deployment, yet there are indications of large variability that may lead to an instable expression of personality traits in these models. We present PERSIST (PERsonality Stability in Synthetic Text), a comprehensive evaluation framework testing 25 open-source models (1B-685B parameters) across 2 million+ responses. Using traditional (BFI, SD3) and novel LLM-adapted personality questionnaires, we systematically vary model size, personas, reasoning modes, question order or paraphrasing, and conversation history. Our findings challenge fundamental assumptions: (1) Question reordering alone can introduce large shifts in personality measurements; (2) Scaling provides limited stability gains: even 400B+ models exhibit standard deviations >0.3 on 5-point scales; (3) Interventions expected to stabilize behavior, such as reasoning and inclusion of conversation history, can paradoxically increase variability; (4) Detailed persona instructions produce mixed effects, with misaligned personas showing significantly higher variability than the helpful assistant baseline; (5) The LLM-adapted questionnaires, despite their improved ecological validity, exhibit instability comparable to human-centric versions. This persistent instability across scales and mitigation strategies suggests that current LLMs lack the architectural foundations for genuine behavioral consistency. For safety-critical applications requiring predictable behavior, these findings indicate that current alignment strategies may be inadequate.

cs.CL

Buried unstrained germanium channels: a lattice-matched platform for quantum technology

Strained Ge ($\epsilon$-Ge) and strained Si ($\epsilon$-Si) buried quantum wells have enabled advanced spin-qubit quantum processors. However, in the absence of suitable lattice-matched substrates, $\epsilon$-Ge and $\epsilon$-Si are deposited on defective, metamorphic SiGe substrates, which may impact device performance and scaling. Here an alternative platform is introduced, based on the heterojunction between unstrained Ge and a lattice-matched strained SiGe ($\epsilon$-SiGe) barrier, eliminating the need for metamorphic buffers altogether. In a structure with a 52-nm-thick $\epsilon$-SiGe barrier, a low-disorder two-dimensional hole gas is demonstrated with a high-mobility of 1.33$\times$10$^5$ cm$^2$/Vs and a low percolation density of 1.4(1)$\times$10$^1$$^0$ cm$^-$$^2$. Quantum transport shows that holes confined in the buried unstrained Ge channel have a strong density-dependent in-plane effective mass and out-of-plane $g$-factor, pointing to a significant heavy-hole$-$light-hole mixing in agreement with theory. Measurements of Zeeman spin-split levels in quantum point contacts further highlight this character, showing a two-fold larger in-plane $g$-factor in Ge than in $\epsilon$-Ge. The prospect of strong spin-orbit interaction, isotopic purification, and of hosting superconducting pairing correlations make this platform appealing for fast quantum hardware and hybrid quantum systems.

cond-mat.mes-hall

QARPET: A Crossbar Chip for Benchmarking Semiconductor Spin Qubits

Large-scale integration of semiconductor spin qubits into quantum processors hinges on the ability to characterize quantum components at scale, a task challenged by their operation at sub-kelvin temperatures, in the presence of magnetic fields, and by the use of radio-frequency signals. Here, we present QARPET (Qubit-Array Research Platform for Engineering and Testing), a scalable architecture for characterizing spin qubits using a quantum dot crossbar array. The crossbar features tightly-pitched spin qubit tiles and is implemented in planar germanium, by fabricating a large device with the potential to host 1058 hole spin qubits. Measurements on a patch of 40 tiles demonstrate key device functionality at millikelvin temperatures, including tile addressability, threshold voltage and charge noise statistics, and the characterisation of hole spin qubits and their coherence times in a single tile. These demonstrations pave the way for a new generation of quantum devices designed for the statistical characterisation of spin qubits.

cond-mat.mes-hall

Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale

Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit low-disorder epitaxial strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micron-scale devices comprising of up to ten quantum dots and four rf-charge sensors arranged in a two-dimensional array. We demonstrate an average charge noise of $\sqrt{S_{0}}=0.3(1)$ $\mu\mathrm{eV}/\sqrt{\mathrm{Hz}}$ at 1 Hz across different locations on the wafer, providing a benchmark for quantum confined holes. We then establish hole-spin qubit control in these heterostructures and extend our investigation from electrical to magnetic noise through spin echo measurements. Exploiting dynamical decoupling sequences, we quantify the power spectral density components arising from the hyperfine interaction with $^{73}$Ge spinful isotopes and identify coherence modulations associated with the interaction with the $^{29}$Si nuclear spin bath near the Ge quantum well. We estimate an integrated hyperfine noise amplitude $\sigma_f$ of 180(8) kHz from $^{73}$Ge and of 47(5) kHz from $^{29}$Si, underscoring the need for full isotopic purification of the qubit host environment.

cond-mat.mes-hall

A vertical gate-defined double quantum dot in a strained germanium double quantum well

Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quantum dot in a strained germanium double quantum well. In quantum transport measurements we observe stability diagrams corresponding to a double quantum dot system. We analyze the capacitive coupling to the nearby gates and find two quantum dots accumulated under the central plunger gate. We extract the position and estimated size, from which we conclude that the double quantum dots are vertically stacked in the two quantum wells. We discuss challenges and opportunities and outline potential applications in quantum computing and quantum simulation.

cond-mat.mes-hall

Germanium wafers for strained quantum wells with low disorder

We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6$\pm$1)$\times$10$^5$ cm$^{-2}$, nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated reduction in short-range scattering allows for a drastic improvement of the disorder properties of the two-dimensional hole gas, measured in several Ge/SiGe heterostructure field-effect transistors. We measure an average low percolation density of (1.22$\pm$0.03)$\times$10$^{10}$ cm$^{-2}$, and an average maximum mobility of (3.4$\pm$0.1)$\times$10$^{6}$ cm$^2$/Vs and quantum mobility of (8.4$\pm$0.5)$\times$10$^{4}$ cm$^2$/Vs when the hole density in the quantum well is saturated to (1.65$\pm$0.02)$\times$10$^{11}$ cm$^{-2}$. We anticipate immediate application of these heterostructures for next-generation, higher-performance Ge spin-qubits and their integration into larger quantum processors.

cond-mat.mes-hall

Hard superconducting gap in germanium

The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for building quantum processors with spin-qubits, but progress with hybrid superconductor-semiconductor devices is hindered because obtaining a superconducting gap free of subgap states (hard gap) has proven difficult. Here we solve this challenge by developing a low-disorder, oxide-free interface between high-mobility planar germanium and a germanosilicide parent superconductor. This superconducting contact is formed by the thermally-activated solid phase reaction between a metal (Pt) and the semiconductor heterostructure (Ge/SiGe). Electrical characterization reveals near-unity transparency in Josephson junctions and, importantly, a hard induced superconducting gap in quantum point contacts. Furthermore, we demonstrate phase control of a Josephson junction and study transport in a gated two-dimensional superconductor-semiconductor array towards scalable architectures. These results expand the quantum technology toolbox in germanium and provide new avenues for exploring monolithic superconductor-semiconductor quantum circuits towards scalable quantum information processing.

cond-mat.mes-hall

Effect of quantum Hall edge strips on valley splitting in silicon quantum wells

We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $μ$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces.

cond-mat.mes-hall