arXiv subjects

Alberto Zobelli

Publications and source records attributed to Alberto Zobelli.

28 records · Page 2Linked to original sources

arXiv2014

Local electrical control of magnetic order and orientation by ferroelastic domain arrangements just above room temperature

Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic order and magnetization direction at the nanoscale with a voltage. We use element-specific x-ray imaging to map the magnetic domains as a function of temperature and voltage in epitaxial FeRh on ferroelastic BaTiO3. Exploiting the nanoscale phase-separation of FeRh, we locally interconvert between ferromagnetism and antiferromagnetism with a small electric field just above room temperature. Our results emphasize the importance of nanoscale ferroic domain structure to achieve enhanced coupling in artificial multiferroics.

cond-mat.mes-hall↗

arXiv2014

Evidence for anisotropic dielectric properties of monoclinic hafnia using high-resolution TEM valence electron energy-loss spectroscopy and ab initio time-dependent density-functional theory

The effect of nanocrystal orientation on the energy loss spectra of monoclinic hafnia (m-HfO$_2$) is measured by high resolution transmission electron microscopy (HRTEM) and valence energy loss spectroscopy (VEELS) on high quality samples. For the same momentum-transfer directions, the dielectric properties are also calculated ab initio by time-dependent density-functional theory (TDDFT). Experiments and simulations evidence anisotropy in the dielectric properties of m-HfO$_2$, most notably with the direction-dependent oscillator strength of the main bulk plasmon. The anisotropic nature of m-HfO$_2$ may contribute to the differences among VEELS spectra reported in literature. The good agreement between the complex dielectric permittivity extracted from VEELS with nanometer spatial resolution, TDDFT modeling, and past literature demonstrates that the present HRTEM-VEELS device-oriented methodology is a possible solution to the difficult nanocharacterization challenges given in the International Technology Roadmap for Semiconductors.

cond-mat.mtrl-sci↗

arXiv2014

Direct evidence of tungsten clustering in W$_{\text{0.02}}$V$_{\text{0.98}}$O$_{\text{2}}$ thin films and its effect on the metal-to-insulator transition

Substitutional tungsten doping of VO$_{\text{2}}$ thin films and its effect on the metal-to-insulator transition are investigated by means of X-ray diffraction, Cs-corrected scanning transmission electron microscope (STEM) and ab-initio simulations. The W$_{\text{0.02}}$V$_{\text{0.98}}$O$_{\text{2}}$ thin films deposited on (001) sapphire are studied in both planar and transverse geometries. The tungsten atoms are distinguishable from the V atoms in the Z-sensitive high angle annular dark field (HAADF) STEM image and their nature is further confirmed by electron energy loss spectroscopy (EELS). The W dopants are found to substitute in the V sites and form local clusters at first neighbour, preferentially along the <010>$_{\text{R}}$ directions. Ab-initio modeling for this 2 at.% W doped VO$_{\text{2}}$ confirms the experimentally found W clustering mechanism to be the most stable substitutional configuration and it demonstrates that the binding energy of such cluster is 0.18 eV. Driving forces for short range ordering are also obtained along the <011>$_{\text{R}}$ and <110>$_{\text{R}}$ directions. Strong energetic penalty is found for the <001>$_{\text{R}}$ direction. Simulations indicate that the clustering helps in stabilizing the tetragonal structure, while a diluted W dopant induces more structural distortion and V-V pairing.This suggests that the clustering mechanism plays a critical role in the transition temperature evolution with the W dopants.

cond-mat.mtrl-sci↗

arXiv2014

Excitons and stacking order in h-BN

The strong excitonic emission at 5.75 eV of hexagonal boron nitride (h-BN) makes this material one of the most promising candidate for light emitting devices in the far ultraviolet (UV). However, single excitons occur only in perfect monocrystals that are extremely hard to synthesize, while regular h-BN samples present a complex emission spectrum with several additional peaks. The microscopic origin of these additional emissions has not yet been understood. In this work we address this problem using an experimental and theoretical approach that combines nanometric resolved cathodoluminescence, high resolution transmission electron microscopy and state of the art theoretical spectroscopy methods. We demonstrate that emission spectra are strongly inhomogeneus within individual flakes and that additional excitons occur at structural deformations, such as faceted plane folds, that lead to local changes of the h-BN stacking order.

cond-mat.mtrl-sci↗

arXiv2012

Graphene edge structures: Folding, scrolling, tubing, rippling and twisting

Conventional three-dimensional crystal lattices are terminated by surfaces, which can demonstrate complex rebonding and rehybridisation, localised strain and dislocation formation. Two dimensional crystal lattices, of which graphene is the archetype, are terminated by lines. The additional available dimension at such interfaces opens up a range of new topological interface possibilities. We show that graphene sheet edges can adopt a range of topological distortions depending on their nature. Rehybridisation, local bond reordering, chemical functionalisation with bulky, charged, or multi-functional groups can lead to edge buckling to relieve strain, folding, rolling and even tube formation. We discuss the topological possibilities at a 2D graphene edge, and under what circumstances we expect different edge topologies to occur. Density functional calculations are used to explore in more depth different graphene edge types.

cond-mat.mes-hall↗

arXiv2012

A comparative study of density functional and density functional tight binding calculations of defects in graphene

The density functional tight binding approach (DFTB) is well adapted for the study of point and line defects in graphene based systems. After briefly reviewing the use of DFTB in this area, we present a comparative study of defect structures, energies and dynamics between DFTB results obtained using the dftb+ code, and density functional results using the localised Gaussian orbital code, AIMPRO. DFTB accurately reproduces structures and energies for a range of point defect structures such as vacancies and Stone-Wales defects in graphene, as well as various unfunctionalised and hydroxylated graphene sheet edges. Migration barriers for the vacancy and Stone-Wales defect formation barriers are accurately reproduced using a nudged elastic band approach. Finally we explore the potential for dynamic defect simulations using DFTB, taking as an example electron irradiation damage in graphene.

cond-mat.mtrl-sci↗

arXiv2011

Low energy graphene edge termination via small diameter nanotube formation

We demonstrate that free graphene sheet edges can curl back on themselves,reconstructing as nanotubes. This results in lower formation energies than any other non-functionalised edge structure reported to date in the literature. We determine the critical tube size and formation barrier and compare with density functional simulations of other edge terminations including a new reconstructed Klein edge. Simulated high resolution electron microscopy images show why such rolled edges may be difficult to detect. Rolled zigzag edges serve as metallic conduction channels, separated from the neighbouring bulk graphene by a chain of insulating sp$^3$-carbon atoms, and introduce Van Hove singularities into the graphene density of states.

cond-mat.mtrl-sci↗

arXiv2009

BN domains included into carbon nanotubes: role of interface

We present a density functional theory study on the shape and arrangement of small BN domains embedded into single-walled carbon nanotubes. We show a strong tendency for the BN hexagons formation at the simultaneous inclusion of B and N atoms within the walls of carbon nanotubes. The work emphasizes the importance of a correct description of the BN-C frontier. We suggest that BN-C interface will be formed preferentially with the participation of N-C bonds. Thus, we propose a new way of stabilizing the small BN inclusions through the formation of nitrogen terminated borders. The comparison between the obtained results and the available experimental data on formation of BN plackets within the single walled carbon nanotubes is presented. The mirror situation of inclusion of carbon plackets within single walled BN nanotubes is considered within the proposed formalism. Finally, we show that the inclusion of small BN plackets inside the CNTs strongly affects the electronic character of the initial systems, opening a band gap. The nitrogen excess in the BN plackets introduces donor states in the band gap and it might thus result in a promising way for n-doping single walled carbon nanotubes.

cond-mat.mes-hall↗

arXiv2008

Ab initio study of bilateral doping within the MoS2-NbS2 system

We present a systematic study on the stability and the structural and electronic properties of mixed molybdenum-niobium disulphides. Using density functional theory we investigate bilateral doping with up to 25 % of MoS2 (NbS2) by Nb (Mo) atoms, focusing on the precise arrangement of dopants within the host lattices. We find that over the whole range of considered concentrations, Nb doping of MoS2 occurs through a substitutional mechanism. For Mo in NbS2 both interstitial and substitutional doping can co-exist, depending upon the particular synthesis conditions. The analysis of the structural and electronic modifications of the perfect bulk systems due to the doping is presented. We show that substitutional Nb atoms introduce electron holes to the MoS2, leading to a semiconductor-metal transition. On the other hand, the Mo doping of Nb2, does not alter the metallic behavior of the initial system. The results of the present study are compared with available experimental data on mixed MoS2-NbS2 (bulk and nanoparticles).

cond-mat.mtrl-sci↗

arXiv2007

Shaping single walled nanotubes

We show that electron irradiation in a dedicated scanning transmission microscope can be used as a nano-electron-lithography technique allowing the controlled reshaping of single walled carbon and boron nitride nanotubes. The required irradiation conditions have been optimised on the basis of total knock-on cross sections calculated within density functional based methods. It is then possible to induce morphological modifications, such as a change of the tube chirality, by removing severals tens of atoms with a nanometrical spatial resolution. These irradiation techniques could open new opportunities for nano-engeneering a large variety of nanostructured materials.

cond-mat.mtrl-sci↗