Ultrafast X-ray interaction with photovoltaic materials: Thermal and nonthermal responses
Cadmium telluride (CdTe), lead sulfide (PbS), and indium tin oxide (ITO) play crucial roles in various electronic applications where laser treatment enables precise modification of their distinctive electronic characteristics. This study utilizes the XTANT-3 hybrid/multiscale model to investigate the microscopic response of these materials to ultrafast X-ray irradiation. The model simultaneously traces intertwined processes of non-equilibrium dynamics of both electrons and atoms, nonadiabatic coupling, nonthermal melting, and bond breaking due to electronic excitation. Among the materials studied, CdTe exhibits the highest radiation resistance, similar to CdS. At the respective threshold doses, the melting is primarily thermal, driven by electron-phonon coupling, which is accompanied by the band gap closure. Additionally, all materials exhibit nonthermal melting at higher doses. When accounting for energy dissipation pathways and material recrystallization processes, damage thresholds increase substantially. In CdTe and PbS, below 1.5 eV/atom, the band gap returns to its original value upon recrystallization. As the dose increases, the resulting cooled material becomes increasingly amorphous, progressively reducing the band gap until a stable configuration is reached. Notably, in a narrow window of deposited doses, ITO exhibits transient superionic behavior, with the liquid oxygen but solid In and Sn sublattices. At 0.6 eV/atom in CdTe and 0.4 eV/atom in PbS and ITO, material ablation from the surface occurs. These findings indicate that femtosecond laser technology offers promising opportunities for precise band gap engineering in various photovoltaic semiconductor devices.