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Alejandro Barrios

Publications and source records attributed to Alejandro Barrios.

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Phase-field modeling of elastically driven abnormal grain growth

Grain-refined metals typically exhibit high strength, yet their engineering applications are often constrained by grain coarsening under thermo-mechanical loading. Recent experiments have revealed abnormal grain growth (AGG) in ultrafine-grained Ni thin films subjected to cyclic loading at room temperature. Unlike conventional AGG, which generally requires significant plastic deformation or high temperatures, this phenomenon occurs within the regime of macroscopic elastic deformation. This AGG is characterized by the preferential growth of grains with an in-plane <100> orientation aligned with the loading direction. Here, we investigate the underlying physical mechanisms by combining phase-field simulations with micromechanical analysis. The results indicate that elastic energy reduction provides a thermodynamically plausible driving force for this orientation-selective grain growth. Phase-field simulations reveal the evolution kinetics of AGG and confirm that local grain geometry and stress states play critical roles in determining the grain growth pathway. By applying this framework to systems with varying elastic anisotropy, we establish a general approach for investigating elastically driven AGG in polycrystalline materials.

cond-mat.mtrl-sci

Fabrication and Structural Analysis of Trilayers for Tantalum Josephson Junctions with Ta$_2$O$_5$ Barriers

Tantalum (Ta) has emerged as a promising low-loss material, enabling record coherence times in superconducting qubits. This enhanced performance is largely attributed to its stable native oxide, which may host fewer two-level system (TLS) defects, which are the key contributors to decoherence in superconducting circuits. Nevertheless, aluminum oxide remains the predominant choice for Josephson junction (JJ) barriers in most qubit architectures. Here, we investigate techniques for forming high-quality oxide layers on $\alpha$-phase tantalum films to develop tantalum-oxide JJ barriers. We explore thermal oxidation in a tube furnace, rapid thermal annealing, and plasma oxidation of both room-temperature and heated Ta films, characterize the resulting structures using X-ray techniques and electron microscopy, and propose a mechanistic picture of the oxidation pathways. We find that plasma oxidation provides the smoothest Ta$_2$O$_5$ layers, is compatible with in situ Ta deposition, and offers thickness control through the annealing temperature, advantageous for JJ fabrication. Lastly, we evaluate methods for growing Ta/TaO$_x$/Ta trilayers. All trilayers showed c-axis-oriented columnar growth of the bottom Ta layer, with sapphire substrates producing larger, better-aligned grains yet higher dislocation densities than silicon. Nucleation of c-axis-oriented $\alpha$-Ta on tantalum-oxide required an Nb seed layer, as direct Ta deposition yielded amorphous Ta. These results demonstrate the feasibility of $\alpha$-Ta/Nb/TaO$_x$/$\alpha$-Ta stacks for JJs with clean interfaces.

cond-mat.supr-con