arXiv subjects

Alejandro Lopez-Bezanilla

Publications and source records attributed to Alejandro Lopez-Bezanilla.

30 records · Page 2Linked to original sources

arXiv2017

Charge transfer and metallicity in LaNiO$_3$/LaMnO$_3$ superlattices

Motivated by recent experiments, we use the $+U$ extension of the generalized gradient approximation to density functional theory to study superlattices composed of alternating layers of LaNiO$_3$ and LaMnO$_3$. For comparison we also study a rocksalt ((111) double perovskite) structure and bulk LaNiO$_3$ and LaMnO$_3$. A Wannier function analysis indicates that band parameters are transferable from bulk to superlattice situations with the exception of the transition metal d-level energy, which has a contribution from the change in d-shell occupancy. The charge transfer from Mn to Ni is found to be moderate in the superlattice, indicating metallic behavior, in contrast to the insulating behavior found in recent experiments, while the rocksalt structure is found to be insulating with a large Mn-Ni charge transfer. We suggest a high density of cation antisite defects may account for the insulating behavior experimentally observed in short-period superlattices.

cond-mat.mtrl-sci↗

arXiv2016

Electronic properties of 8-Pmmn borophene

First-principles calculations on monolayer 8-{\it Pmmn} borophene are reported to reveal unprecedented electronic properties in a two-dimensional material. Based on a Born effective charge analysis, 8-{\it Pmmn} borophene is the first single-element based monolayered material exhibiting two sublattices with substantial ionic features. The observed Dirac cones are actually formed by the p$_z$ orbitals of one of the inequivalent sublattices composed of uniquely four atoms, yielding an underlying hexagonal network topologically equivalent to distorted graphene. A significant physical outcome of this effect includes the possibility of converting metallic 8-{\it Pmmn} borophene into an indirect band gap semiconductor by means of external shear stress. The stability of the strained structures are supported by a phonon frequency analysis. The Dirac cones are sensitive to the formation of vacancies only in the inequivalent sublattice electronically active at the Fermi level.

cond-mat.mtrl-sci↗

arXiv2016

Electronic Transport Properties of Chemically Modified Double-Walled Carbon Nanotubes

We present a study on the quantum transport properties of chemically functionalized metallic double-walled carbon nanotubes (DWNTs) with lengths reaching the micrometer scale. First-principles calculations evidence that, for coaxial tubes separated by the typical graphitic van der Waals-bond distance, the chemical modification of the outer wall with sp$^3$-type defects affects the electronic structure of both the outer and the inner tube, which reduces significantly the charge transport capability of the DWNT. For larger spacing between sidewalls, the conductivity of the outer wall decreases with increasing functional group coverage density while charge transport in the inner tube is equivalent to that of a pristine nanotube. Additionally, chemical attachment of CCl$_2$ onto the outer DWNT sidewall barely affect the conjugated $π$-network of the double-wall and charge transport remains in the quasi-ballistic regime. These results indicate an efficient route for tailoring electronic transport in DWNTs provided inner shell geometry and functional groups are properly chosen.

cond-mat.mtrl-sci↗

arXiv2016

Electronic and Quantum Transport Properties of Substitutionally Doped Double-Walled Carbon Nanotubes

A first-principles investigation of the electronic and quantum transport properties of double-walled carbon nanotubes doped with nitrogen and boron atoms is presented. Concentric nanotube sidewalls separated by the typical graphitic van der Waals bond distance are found to strongly interact upon incorporation of doping atoms in the hexagonal networks. The local perturbation caused by the doping atoms extends over both shells due to a hybridization of their electronic states, yielding a reduction of the backscattering efficiency as compared with two independent single-walled nanotubes. A multi-scale approach for the study of transport properties in micrometer-long double-walled carbon nanotubes allows to demonstrate that transitions from the ballistic to the localized regime can occur depending on the type of doping and the energy of the charge carrier. These results shed light on the quantum mechanism by which B and N doping represent an efficient method to create mobility gaps in metallic concentric carbon nanotubes.

cond-mat.mtrl-sci↗

arXiv2016

Effect of atomic-scale defects and dopants on phosphorene electronic structure and quantum transport properties

By means of a multi-scale first-principles approach, a description of the local electronic structure of two-dimensional and narrow phosphorene sheets with various types of modifications is presented. First, a rational argument based on the geometry of the pristine and modified P network, and supported by the Wannier functions formalism is introduced to describe a hybridization model of the P atomic orbitals. {\it Ab initio} calculations show that non-isoelectronic foreign atoms form quasi-bound states at varying energy levels and create different polarization states depending on the number of valence electrons between P and the doping atom. The quantum transport properties of modified phosphorene ribbons are further described with great accuracy. The distortions on the electronic bands induced by the external species lead to strong backscattering effects on the propagating charge carriers. Depending on the energy of the charge-carrier and the type of doping, the conduction may range from the diffusive to the localized regime. Interstitial defects at vacant sites lead to homogeneous transport fingerprints across different types of doping atoms. We suggest that the relatively low values of charge mobility reported in experimental measurements may have their origin in the presence of defects.

cond-mat.mtrl-sci↗

arXiv2015

Plentiful magnetic moments in oxygen deficient SrTiO3

Correlated band theory is employed to investigate the magnetic and electronic properties of different arrangements of oxygen di- and tri-vacancy clusters in SrTiO$_3$. Hole and electron doping of oxygen deficient SrTiO$_3$ yields various degrees of magnetization as a result of the interaction between localized magnetic moments at the defected sites. Different kinds of Ti atomic orbital hybridization are described as a function of the doping level and defect geometry. We find that magnetism in SrTiO$_{3-δ}$ is sensitive to the arrangement of neighbouring vacancy sites, charge carrier density, and vacancy-vacancy interaction. Permanent magnetic moments in the absence of vacancy doping electrons are observed. Our description of the charged clusters of oxygen vacancies widens the previous descriptions of mono and multi-vacancies and points out the importance of the controled formation at the atomic level of defects for the realization of transition metal oxide based devices with a desirable magnetic performance.

cond-mat.mtrl-sci↗

arXiv2014

Machine learning for many-body physics: The case of the Anderson impurity model

Machine learning methods are applied to finding the Green's function of the Anderson impurity model, a basic model system of quantum many-body condensed-matter physics. Different methods of parametrizing the Green's function are investigated; a representation in terms of Legendre polynomials is found to be superior due to its limited number of coefficients and its applicability to state of the art methods of solution. The dependence of the errors on the size of the training set is determined. The results indicate that a machine learning approach to dynamical mean-field theory may be feasible.

cond-mat.str-el↗

arXiv2014

Magnetism and metal-insulator transition in oxygen deficient SrTiO$_3$

First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO$_3$ (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a non-magnetic double donor, manipulation of the doping conditions allows the stability of a single donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhance the binding of this state. The energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.

cond-mat.mtrl-sci↗

arXiv2014

Modeling Electronic Quantum Transport with Machine Learning

We present a Machine Learning approach to solve electronic quantum transport equations of one-dimensional nanostructures. The transmission coefficients of disordered systems were computed to provide training and test datasets to the machine. The system's representation encodes energetic as well as geometrical information to characterize similarities between disordered configurations, while the Euclidean norm is used as a measure of similarity. Errors for out-of-sample predictions systematically decrease with training set size, enabling the accurate and fast prediction of new transmission coefficients. The remarkable performance of our model to capture the complexity of interference phenomena lends further support to its viability in dealing with transport problems of undulatory nature.

cond-mat.mes-hall↗

arXiv2013

Spin-Resolved Self-Doping Tunes the Intrinsic Half-Metallicity of AlN Nanoribbons

We present a first-principles theoretical study of electric field-and strain-controlled intrinsic half-metallic properties of zigzagged aluminium nitride (AlN) nanoribbons. We show that the half-metallic property of AlN ribbons can undergo a transition into fully-metallic or semiconducting behavior with application of an electric field or uniaxial strain. An external transverse electric field induces a full charge screening that renders the material semiconducting. In contrast, as uniaxial strain varies from compressive to tensile, a spin-resolved selective self-doping increases the half-metallic character of the ribbons. The relevant strain-induced changes in electronic properties arise from band structure modifications at the Fermi level as a consequence of a spin-polarized charge transfer between pi-orbitals of the N and Al edge atoms in a spin-resolved self-doping process. This band structure tunability indicates the possibility ofdesigning magnetic nanoribbons with tunable electronic structure by deriving edge states from elements with sufficiently different localization properties. Finite temperature molecular dynamics reveal a thermally stable half-metallic nanoribbon up to room temperature.

cond-mat.mtrl-sci↗

arXiv2012

Embedded Boron Nitride Domains In Graphene Nanoribbons For Transport Gap Engineering

We numerically investigate the impact of boron nitride (BN) domains on the transport properties of graphene nanoribbons with lengths ranging from a few to several hundreds of nanometers and lateral size up to 4 nm. By varying the size and morphology of the BN islands embedded in the graphene matrix, a wide transport tunability is obtained from perfect insulating interfaces to asymmetric electron-hole transmission profiles, providing the possibility to engineer mobility gaps to improve device performances. Even in the low-density limit of embedded BN islands, transport properties are found to be highly dependent on both the BN-domain shape and the size with a strong tendency toward an insulating regime when increasing the number of ionic bonds in the ribbon. This versatility of conduction properties offers remarkable opportunities for transport gap engineering for the design of complex device architectures based on a newly synthesized one-atom hybrid layered material.

cond-mat.mes-hall↗

arXiv2010

Chemically Functionalized Semiconducting Carbon Nanotubes: Limits for High Conductance Performance

We present a first-principles study of the electronic transport properties of micrometer long semiconducting CNTs randomly covered with carbene functional groups. Whereas prior studies suggested that metallic tubes are hardly affected by such addends, we show here that the conductance of semiconducting tubes with standard diameter is on the contrary severely damaged. The configurational averaged conductance as a function of tube diameter and with a coverage of up to one hundred functional groups is extracted. Our results indicate that the search for a conductance-preserving covalent functionalization route remains a challenging issue.

cond-mat.mes-hall↗