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Alejandro P. Ayala

Publications and source records attributed to Alejandro P. Ayala.

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Libron-phonon coupling and hydrogen-bond dynamics in the vacancy-ordered perovskite (NH4)2SnCl6: a temperature- and pressure-dependent Raman study

Vacancy-ordered perovskites R2MX6 combine a rigid inorganic framework with a molecular A-site cation, but how the cation dynamics couples to the lattice phonons under external perturbation remains largely unexplored. The librational motion of NH4+ in (NH4)2SnCl6 is strictly Raman-silent by symmetry, which is why it has been probed almost exclusively by neutron scattering, NMR and NQR. We show that it is nevertheless accessible to Raman spectroscopy, through the renormalization it imposes on the allowed [SnCl6]2- modes. Combining single-crystal X-ray diffraction with Raman scattering between 10 and 300 K and up to 10.1 GPa, we find that the average cubic structure varies smoothly with no anomaly, while below ~100 K the [SnCl6]2- modes acquire a libron-phonon renormalization (E_eff ~ 4.7 meV) and a symmetry-selective line asymmetry, and the N-H stretch passes through a minimum near 120 K (E_eff ~ 9.3 meV); both track the classical-to-quantum crossover of the ammonium rotor. The two effective energies lie below the bare librational transition of 13.4 meV measured by neutrons, as expected for a self-energy scale. The ammonium linewidths, by contrast, are governed by pure dephasing rather than by anharmonic decay and carry no crossover signature. Under pressure the octahedral modes stiffen smoothly, whereas the cavity responds twice: the translational F2g mode of NH4+ gains Raman intensity above 1.3 GPa, and the N-H stretch inverts its pressure slope near 1.7 GPa, with no change of space group and full recovery on decompression. The rigid octahedral framework is thus essentially decoupled from a dynamically active NH4+ subsystem that carries the response to both perturbations, offering a route to tune cation-phonon coupling independently of the octahedral network.

cond-mat.mtrl-sci

"Aftereffects'' Phenomenon in $^{111}$In($\rightarrow$$^{111}$Cd)-Implanted $α$-Al$_2$O$_3$ Single Crystals: Novel Approach Integrating Experimental Double-Model Analysis with Density-Functional Theory

We develop an experimental double-model analysis, combined with density-functional theory (DFT), to explore the origins of dynamic hyperfine interactions (HFIs) linked to the electron-capture decay ''aftereffects ''(ECAE) phenomenon. This electronic effect, reversible with temperature, has been observed in time-differential perturbed $γ$-$γ$ angular correlations (TDPAC) experiments on oxides doped with ($^{111}$In (EC)$\rightarrow$)$^{111}$Cd probe atoms. Besides identifying the electronic configuration that yields the stable final electric-field gradient (EFG) after the dynamic process ends, we determine the initial configurations around the probe nucleus and their corresponding EFGs whose fluctuations produce these dynamic HFIs. We demonstrate the equivalence between parameters of the two most widely used methods for analyzing this type of dynamic HFI, enabling us to obtain these initial electronic configurations at each temperature. In this framework, to unravel controversial TDPAC results reported for $^{111}$In-implanted $α$-Al$_2$O$_3$ single crystals, we perform a DFT study of Cd-doped $α$-Al$_2$O$_3$, examining their defect-formation energies, as functions of the Cd impurity level's charge state. We show that the stable final EFG for the expected interaction HFI$_u$ originates from $^{111}$Cd probes located at defect-free substitutional Al sites (without trapped electron holes) across all measured temperatures. Those of the unexpected HFI$_d$ originate from probes at Al sites, but with different degrees of occupation of the Cd impurity level. We show that one trapped hole for HFI$_u$ and at least five for HFI$_d$ are responsible for the dynamic regime when the ''aftereffects'' are more pronounced. The proposed scenario accounts for the observation of well-defined EFGs when the dynamic regime does not end.

cond-mat.mes-hall