arXiv subjects

Aleksandr Shabanov

Publications and source records attributed to Aleksandr Shabanov.

3 recordsLinked to original sources

arXiv2026

Lamb Shift of Landau Levels in Two-Dimensional Electron Systems in a Multimode Resonator

The use of resonators to modify the behavior of electromagnetic systems demonstrates its potential for application in a wide range of problems. However, existing theoretical studies often resort to the single-mode approximation, rarely considering a second resonator mode. In this paper, we show that including a large number of resonator modes in the model significantly enhances the softening effect of the cyclotron frequency of a two-dimensional electron system. We address this problem by demonstrating the possibility of reducing the system to a set of coupled harmonic oscillators and finding the eigenfrequencies of the oscillators. This is made possible by applying the self-energy method for modes in one polarization and the method for finding the eigenvalues of matrices that have undergone first-rank updating for modes in the perpendicular polarization.

cond-mat.mes-hall↗

arXiv2025

Multifunctional 2d infrared photodetectors enabled by asymmetric singular metasurfaces

Two-dimensional materials offering ultrafast photoresponse suffer from low intrinsic absorbance, especially in the mid-infrared wavelength range. Challenges in 2d material doping further complicate the creation of light-sensitive $p-n$ junctions. Here, we experimentally demonstrate a graphene-based infrared detector with simultaneously enhanced absorption and strong structural asymmetry enabling zero-bias photocurrent. A key element for those properties is an asymmetric singular metasurface (ASMS) atop graphene with keen metal wedges providing singular enhancement of local absorbance. The ASMS geometry predefines extra device functionalities. The structures with connected metallic wedges demonstrate polarization ratios up to 200 in a broad range of carrier densities at a wavelength of 8.6 $μ$m. The structures with isolated wedges display gate-controlled switching between polarization-discerning and polarization-stable photoresponse, a highly desirable yet scarce property for polarized imaging.

cond-mat.mes-hall↗

arXiv2021

Optimal asymmetry of transistor-based terahertz detectors

Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so far that geometric asymmetry of common FET with respect to source-drain interchange is a strong objective to photovoltage harvesting. Here, we break the traditional scheme and reveal the optimally-asymmetric FET structure providing the maximization of THz responsivity. We fabricate a series of graphene transistors with variable top gate position with respect to mid-channel, and compare their sub-THz responsivities in a wide range of carrier densities. We show that responsivity is maximized for input gate electrode shifted toward the source contact. Theoretical simulations show that for large channel resistance, exceeding the gate impedance, such recipe for responsivity maximisation is universal, and holds for both resistive self-mixing and photo-thermoelectric detection pathways. In the limiting case of small channel resistance, the thermoelectric and self-mixing voltages react differently upon changing the asymmetry, which may serve to disentangle the origin of nonlinearities in novel materials.

cond-mat.mes-hall↗