arXiv subjects

Aleksandra Łopion

Publications and source records attributed to Aleksandra Łopion.

8 recordsLinked to original sources

arXiv2026

Optical Readout of Reconfigurable Layered Magnetic Domain Structure in CrSBr

The van der Waals magnetic semiconductor CrSBr combines multistable magnetic order with strong light--matter coupling, enabling optical access to a rich and reconfigurable layered magnetic domain structure. A purely optical, non-destructive, and non-contact readout of layered magnetic configurations is realized here by magneto-reflectance measurements and interpreted using an optical multilayer model. The magnetic state is tunable by applied magnetic fields and by interfacing CrSBr with the antiferromagnet MnPS$_3$. Applying an external magnetic field along the easy axis drives the hysteretic antiferromagnetic--to--ferromagnetic transition, which is not universally binary but instead develops through a cascade of intermediate magnetic configurations whose multiplicity and stability scale systematically with layer thickness and can be tailored by magnetic interfaces. The intertwined optical and magnetic properties of CrSBr provide a readout mechanism for information encoded in and processed through its magnetic configuration that is compatible with modern on- and off-chip photonic and electronic technologies. These properties identify CrSBr as a promising platform for intelligent matter and for spin-optoelectronics, in particular for neuromorphic architectures that can learn and evolve in response to changing environments.

cond-mat.mes-hall↗

arXiv2026

Dielectric Tensor of CrSBr from Spectroscopic Imaging Ellipsometry

Chromium sulfur bromide (CrSBr) is a magnetic van der Waals semiconductor with a direct bandgap and pronounced anisotropy in its electronic, optical, spin and lattice degrees of freedom. Here, we employ spectroscopic imaging ellipsometry (SIE) and Mueller-matrix analysis to determine the full dielectric tensor of paramagnetic CrSBr thin films. Our measurements reveal optical anisotropy, characterized by three distinct diagonal components of the dielectric tensor. The in-plane elements are dominated by prominent excitonic resonances polarized along the two main crystallographic axes. Two main excitonic bands (A and B excitons) centered around 1.3eV and 1.7eV, respectively, are identified; the A-exciton polarized along the b-crystallographic direction, whereas the B-exciton appears to consist of two nearly degenerate contributions polarized along two orthogonal in-plane crystal axes. These results provide fundamental insight into anisotropic light-matter interactions in CrSBr, relevant for future spin-optoelectronic and photonic applications.

cond-mat.mtrl-sci↗

arXiv2025

Hole to Electron Crossover in a (Cd,Mn)Te Quantum Well through Surface Metallization

In this work we look into how the contact material influences the local charge properties of a p-type CdTe-based quantum well. We study five metals deposited as 10 nm layers on the sample surface: Au, Ag, Cr, Ni and Ti. We use magneto-spectroscopy to discriminate their charge states through monitoring the Zeeman shifts at singlet-triplet transitions. Most tested metals retain the original p-type of the QW, while gold and nickel coverage flips the local doping to n-type. This is attributed to a robust bonding of these two metals to the semiconductor, efficiently passivating its surface and thus improving electron diffusion from the metal to the quantum well.

cond-mat.mes-hall↗

arXiv2025

Impact of the Hole Gas on Optically Detected Magnetic Resonance in (Cd,Mn)Te Based Quantum Well

Optically detected magnetic resonance (ODMR) is a useful technique for studying interactions between local spins (magnetic ions) and carrier gas. We present the ODMR study of single (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) with the hole gas. We observe different characteristics of the ODMR signals obtained simultaneously using the optical signals of neutral and positively charged exciton. From that, we infer an existence of local fluctuations of carrier gas density resulting in separate populations of Mn$^{2+}$ ions. At the same time, the shape of the ODMR signal contains information about the temperature of the magnetic ions involved in the absorption of the MW. Studying it in detail provides even more information about the interactions with charge carriers. In the QW, two separate ensembles of ions are thermalized differently in the presence of carriers.

cond-mat.mes-hall↗

arXiv2024

Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale

In this work, we study the impact of carrier localization on three quantities sensitive to carrier gas density at the micrometer scale: charged exciton (X+) oscillator strength, local free carrier conductivity, and the Knight shift. The last two are observed in a micrometer-scale, spatially resolved optically detected magnetic resonance experiment (ODMR). On the surface of MBE-grown (Cd,Mn)Te quantum well we identify defected areas in the vicinity of dislocations. We find that these areas show a much lower conductivity signal while maintaining the same Knight shift values as the pristine areas of the quantum well. We attribute this behavior to carrier localization in the defected regions.

cond-mat.mes-hall↗

arXiv2024

Strain-induced speed-up of Mn$^{2+}$ spin-lattice relaxation in (Cd,Mn)Te/(Cd,Mg)Te quantum wells: a time-resolved ODMR study

This study examines the spin-lattice relaxation rate of Mn$^{2+}$ ions in strained diluted magnetic semiconductor (Cd,Mn)Te/(Cd,Mg)Te quantum wells using the optically detected magnetic resonance (ODMR) technique. By adjusting the magnesium (Mg) content in the buffer layer, we created samples with different strain levels. Our time-resolved ODMR results show that the spin-lattice relaxation time becomes faster as strain increases. We also found that the relaxation rate increases with both magnetic field and temperature, showing a power-law behavior. To understand these observations, we used a theoretical model based on six-level rate equations with non-equal level separations. This model suggests that the main factor affecting relaxation in our samples is a "direct" mechanism. The model's predictions match well with our experimental data. Overall, our findings give insights into spin-lattice relaxation in strained quantum wells and could be important for the development of future quantum and spintronic devices.

cond-mat.mes-hall↗

arXiv2023

Magnetic ion relaxation time distribution within a quantum well

Time-resolved optically detected magnetic resonance (ODMR) is a valuable technique to study the local deformation of the crystal lattice around magnetic ion as well as the ion spin relaxation time. Here we utilize selective Mn-doping to additionally enhance the inherent locality of the ODMR technique. We present the time-resolved ODMR studies of single {(Cd,Mg)Te/(Cd,Mn)Te} quantum wells (QWs) with manganese ions located at different positions along the growth axis -- in the center or on the sides of the quantum well. We observe that spin-lattice relaxation of Mn$^{2+}$ significantly depends on the ion-carrier wavefunction overlap at low-magnetic fields. Interestingly, the effect is clearly observed in spite of very low carrier density, which suggests the potential for control of the Mn$^{2+}$ ion relaxation rate by means of the electric field in future experiments.

cond-mat.mes-hall↗

arXiv2019

Temperature dependence of photoluminescence lifetime of atomically thin WSe2 layer

At cryogenic temperatures, the photoluminescence spectrum of monolayer WSe2features a num-ber of lines related to the recombination of so-called localized excitons. The intensity of these lines strongly decreases with increasing temperature. In order to understand the mechanism behind this phenomenon, we carried out a time-resolved experiment, which revealed a similar trend in the photoluminescence decay time. Our results identify the opening of additional nonradiative relaxation channels as a primary cause of the observed temperature quenching of the localized excitons' photoluminescence.

cond-mat.mes-hall↗