arXiv subjects

Aleksandra Krajewska

Publications and source records attributed to Aleksandra Krajewska.

13 recordsLinked to original sources

arXiv2025

Nematic quantum disordered state in FeSe

The unusual quantum-disordered magnetic ground state intertwined with superconductivity and electronic nematicity in FeSe has been a research focus in iron-based superconductors. However, the intrinsic spin excitations across the entire Brillouin zone in detwinned FeSe, which forms the basis for a microscopic understanding of the magnetic state and superconductivity, remain to be determined. Here, we use inelastic neutron scattering to map out the spin excitations of FeSe dewtinned with a uniaxial-strain device. We find that the stripe spin excitations (Q=(1, 0)/(0, 1)) exhibit the $C_2$ symmetry up to $E\approx120$ meV, while the N{é}el spin excitations (Q=(1, 1)) retain their $C_4$ symmetry in the nematic state. The temperature dependence of the difference in the spin excitations at Q=(1, 0) and (0, 1) for temperatures above the structural phase transition unambiguously shows the establishment of the nematic quantum disordered state. The similarity of the Néel excitations in FeSe and NaFeAs suggests that the Néel excitations are driven by the enhanced electron correlations in the $3d_{xy}$ orbital. By determining the key features of the stripe excitations and fitting their dispersions using a Heisenberg Hamiltonian with biquadratic interaction ($J_1$-$K$-$J_2$), we establish a spin-interaction phase diagram and conclude that FeSe is close to a crossover region between the antiferroquadrupolar, Néel, and stripe ordering regimes. The results provide an experimental basis for establishing a microscopic theoretical model to describe the origin and intertwining of the emergent orders in iron-based superconductors.

cond-mat.supr-con↗

arXiv2023

Electrostatically-induced strain of graphene on GaN nanorods

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod substrate affects the graphene electrode in two ways: 1) by a change of the carrier concentration in graphene and 2) by inducing strain, as demonstrated by the Raman spectroscopy. The capacitance of the investigated structures scales with the area of graphene in contact with the nanorods. Due to the reduced contact surface, the efficiency of graphene gating is one order of magnitude lower than for a comparable structure without nanorods. The shift of graphene Raman modes observed under bias clearly shows the presence of electrostatically-induced strain and only a weak modification of carrier concentration, both independent of number of graphene layers. A higher impact of bias on strain was observed for samples with a larger contact area between the graphene and the nanorods which shows perspective for the construction of sensors and nanoresonator devices.

cond-mat.mes-hall↗

arXiv2022

Crystal-field states and defect levels in candidate quantum spin ice Ce$_{2}$Hf$_{2}$O$_{7}$

We report the synthesis of powder and single-crystal samples of the cerium pyrohafnate and their characterization using neutron diffraction, thermogravimetry and X-ray absorption spectroscopy. We evaluate the amount of non-magnetic Ce$^{4+}$ defects and use this result to interpret the spectrum of crystal-electric field transitions observed using inelastic neutron scattering. The analysis of these single-ion transitions indicates the dipole-octupole nature of the ground state doublet and a significant degree of spin-lattice coupling. The single-ion properties calculated from the crystal-electric field parameters obtained spectroscopically are in good agreement with bulk magnetic susceptibility data down to about 1 K. Below this temperature, the behavior of the magnetic susceptibility indicates a correlated regime without showing any sign of magnetic long-range order or freezing down to 0.08 K. We conclude that Ce$_2$Hf$_2$O$_{7}$ is another candidate to investigate exotic correlated states of quantum matter such as the octupolar quantum spin ice recently argued to exist in the isostructural compounds Ce$_2$Sn$_2$O$_7$ and Ce$_2$Zr$_2$O$_7$.

cond-mat.str-el↗

arXiv2021

A model for coupled $4f-3d$ magnetic spectra: a neutron scattering study of the Yb$-$Fe hybridisation in Yb$_3$Fe$_5$O$_{12}$

In this work, we explore experimentally and theoretically the spectrum of magnetic excitations of the Fe$^{3+}$ and Yb$^{3+}$ ions in ytterbium iron garnet (Yb$_3$Fe$_5$O$_{12}$). We present a complete description of the crystal-field splitting of the $4f$ states of Yb$^{3+}$, including the effect of the exchange field generated by the magnetically ordered Fe subsystem. We also consider a further effect of the Fe-Yb exchange interaction, which is to hybridise the Yb crystal field excitations with the Fe spin-wave modes at positions in the Brillouin zone where the two types of excitations cross. We present detailed measurements of these hybridised excitations, and propose a framework which can be used in the quantitative analysis of the coupled spectra in terms of the anisotropic $4f-3d$ exchange interaction.

cond-mat.str-el↗

arXiv2021

Pseudomagnetic fields and strain engineering: graphene on GaN nanowires

Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A detailed analysis of the strain distribution shows positive correlation between strain gradient and distances between borders of supporting regions. These results are confirmed by Raman spectroscopy by analysis the D' band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by a modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters.

cond-mat.mes-hall↗

arXiv2021

Highly effective gating of graphene on GaN

By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to an increase in carrier concentration of about 1.2x10^13 cm-2. The presence of a distinct G band splitting together with a narrow symmetric 2D band indicates turbostratic layer stacking and suggests the presence of a high potential gradient near the Schottky junction even at zero bias. The subbands characterized by the highest Raman energies correspond to the largest concentration of electrons. An analysis based on electroreflectance measurements and a modified Richardson equation confirmed that graphene on n-GaN separated by an undoped GaN spacer behaves like a capacitor at reverse bias. At least 60% of G subband position shifts occur at forward bias, which is related to a rapid reduction of electric field near the Schottky junction. Raman micromapping shows a high uniformity of gating efficiency on the surface. Therefore, our studies demonstrate the usefulness of few layer turbostratic graphene deposited on GaN for tracing electron-phonon coupling in graphene. Multilayer graphene also provides uniform and stable electric contacts. Moreover, the observed bias sensitive G band splitting can be used as an indicator of charge transfer in sensor applications in the low bias regime.

cond-mat.mtrl-sci↗

arXiv2021

Lattice dynamics and structural transition of the hyperhoneycomb iridate $β$-Li$_2$IrO$_3$ investigated by high-pressure Raman scattering

We report a polarized Raman scattering study of the lattice dynamics of $β$-Li$_2$IrO$_3$ under hydrostatic pressures up to 7.62 GPa. At ambient pressure, $β$-Li$_2$IrO$_3$ exhibits the hyperhoneycomb crystal structure and a magnetically ordered state of spin-orbit entangled Jeff = 1/2 moments that is strongly influenced by bond-directional (Kitaev) exchange interactions. At a critical pressure of ~ 4.1 GPa, the phonon spectrum changes abruptly consistent with the reported structural transition into a monoclinic, dimerized phase. A comparison to the phonon spectra obtained from density functional calculations shows reasonable overall agreement. The calculations also indicate that the high-pressure phase is a nonmagnetic insulator driven by the formation of Ir-Ir dimer bonds. Our results thus indicate a strong sensitivity of the electronic properties of $β$-Li$_2$IrO$_3$ to the pressure-induced structural transition.

cond-mat.str-el↗

arXiv2018

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nanowires being in contact with graphene impact graphene properties like roughness, strain and carrier concentration as well as density and type of induced defects. Detailed analysis of Raman spectra of graphene deposited on different nanowire substrates shows that bigger differences in nanowires height increase graphene strain, while higher number of nanowires in contact with graphene locally reduce the strain. Moreover, the value of graphene carrier concentration is found to be correlated with the density of nanowires in contact with graphene. Analysis of intensity ratios of Raman G, D and D' bands enable to trace how nanowire substrate impacts the defect concentration and type. The lowest concentration of defects is observed for graphene deposited on nanowires of the lowest density. Contact between graphene and densely arranged nanowires leads to a large density of vacancies. On the other hand, grain boundaries are the main type of defects in graphene on rarely distributed nanowires. Our results also show modification of graphene carrier concentration and strain by different types of defects present in graphene.

cond-mat.mes-hall↗

arXiv2018

Surface-enhanced Raman scattering in graphene deposited on Al$_x$Ga$_{1-x}$N/GaN axial heterostructure nanowires

The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of SERS and therefore suggests the chemical mechanism of enhancement.

cond-mat.mes-hall↗

arXiv2017

Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array

A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a smooth graphene surface which is present when the GaN nanowires are uniform, whereas graphene on nanowires with substantial height differences is observed to be pierced and stretched by the uppermost nanowires. The energy shifts of the characteristic Raman bands confirms that these differences in the nanowire height has a significant impact on the local graphene strain and the carrier concentration. The images obtained by Kelvin probe force microscopy show clearly that the carrier concentration in graphene is modulated by the nanowire substrate and dependent on the nanowire density. Therefore, the observed surface enhanced Raman scattering for graphene deposited on GaN nanowires of comparable height is triggered by self-induced nano-gating to the graphene. However, no clear correlation of the enhancement with the strain or the carrier concentration of graphene was discovered.

cond-mat.mes-hall↗

arXiv2016

Negative Kerr nonlinearity of graphene as seen via chirped-pulse-pumped self-phase modulation

We experimentally demonstrate a negative Kerr nonlinearity for quasi-undoped graphene. Hereto, we introduce the method of chirped-pulse-pumped self-phase modulation and apply it to graphene-covered silicon waveguides at telecom wavelengths. The extracted Kerr-nonlinear index for graphene equals n2,gr = -10^(-13) m^2/W. Whereas the sign of n2,gr turns out to be negative in contrast to what has been assumed so far, its magnitude is in correspondence with that observed in earlier experiments. Graphene's negative Kerr nonlinearity strongly impacts how graphene should be exploited for enhancing the nonlinear response of photonic (integrated) devices exhibiting a positive nonlinearity. It also opens up the possibility of using graphene to annihilate unwanted nonlinear effects in such devices, to develop unexplored approaches for establishing Kerr processes, and to extend the scope of the "periodic poling" method often used for second-order nonlinearities towards third-order Kerr processes. Because of the generic nature of the chirped-pulse-pumped self-phase modulation method, it will allow fully characterizing the Kerr nonlinearity of essentially any novel (2D) material.

physics.optics↗

arXiv2015

Enhanced Raman scattering and weak localization in graphene deposited on GaN nanowires

The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires induces spectral changes as well as large enhancement of Raman scattering intensity. Surprisingly, the smallest enhancement (about 30-fold) was observed for the defect induced D' process and the highest intensity increase (over 50-fold) was found for the 2D transition. The observed energy shifts of the G and 2D bands allowed to determine carrier concentration fluctuations induced by GaN nanowires. Comparison of Raman scattering spatial intensity maps and the images obtained using scanning electron microscope led to conclusion that vertically aligned GaN nanowires induce a homogenous strain, substantial spatial modulation of carrier concentration in graphene and unexpected homogenous distribution of defects created by interaction with nanowires. The analysis of the D and D' peak intensity ratio showed that interaction with nanowires also changes the probability of scattering on different types of defects. The Raman studies were correlated with weak localization effect measured using microwave induced contactless electron transport. Temperature dependence of weak localization signal showed electron-electron scattering as a main decoherence mechanism with additional, temperature independent scattering reducing coherence length. We attributed it to the interaction of electrons in graphene with charges present on the top of nanowires due to spontaneous and piezoelectric polarization of GaN. Thus, nanowires act as antennas and generate enhanced near field which can explain the observed large enhancement of Raman scattering intensity.

cond-mat.mes-hall↗

arXiv2015

Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etch and electrochemical delamination methods with respect to residual sub-monolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection x-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10$^{13}$ atoms/cm$^{2}$. These metal impurities appear to be partly mobile upon thermal treatment as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics these results reveal that further progress in synthesis, handling, and cleaning of graphene is required on the way to its advanced electronic and optoelectronic applications.

cond-mat.mes-hall↗