arXiv subjects

Aleksei A. Sukhanov

Publications and source records attributed to Aleksei A. Sukhanov.

15 recordsLinked to original sources

arXiv2023

Quasi-bound Electron Pairs in Two-Dimensional Materials with a Mexican-Hat Dispersion

We study quasi-bound states of two electrons that arise in two-dimensional materials with a Mexican-hat dispersion (MHD) at an energy above its central maximum. The width of the resonance of the local density of states created by pairs is determined by the hybridization of atomic orbitals, due to which the MHD is formed. The mechanism of the quasi-bound state formation is due to the fact that effective reduced mass of electrons near the MHD top is negative. An unusual feature of quasi-bound states is that the resonance width can vanish and then they transform into bound states in continuum. We study in detail the quasi-bound states for topological insulators, when the MHD is due to the hybridization of inverted electron and hole bands. In this case, the resonance width is extremely small at weak hybridization. The highest binding energy is achieved for singlet quasi-bound pairs with zero angular number.

cond-mat.str-el↗

arXiv2022

Quasi-bound States and Resonant Skew Scattering in Two-Dimensional Materials with a Mexican-Hat Dispersion

Mexican-hat dispersion of band electrons in two-dimensional materials attracts a lot of interest, mainly due to the Van Hove singularity of the density of states near the band edge. In this paper, we show that there is one more feature of such a dispersion, which also leads to nontrivial effects. It consists in the fact that the sign of the effective mass in the momentum space near the central extremum is opposite to the sign of the mass outside this region. For this reason, any localized potential that repels quasiparticles in the outer region attracts quasiparticles in the central region and thereby creates quasi-bound states. We study these states in the case when the Mexican-hat dispersion is formed due to the hybridization of the inverted electron and hole bands, and the potential is created by a point defect. The energy and width of the resonance of the local density of states corresponding to a quasi-bound state are found, and it is shown that, under certain conditions, a quasi-bound state can transform into a bound state in a continuum of band states. The presence of quasi-bound states leads to nontrivial effects in the spin-dependent scattering of electrons. Due to the quasi-bound state, the skew scattering is strongly enhanced for electrons with energy near the resonance, and the skewness angle varies over a wide range depending on the energy. In addition, in a certain energy range, a nontrivial effect of scattering suppression appears in the direction opposite to the skewness angle.

cond-mat.mes-hall↗

arXiv2021

Conductance suppression by nonmagnetic point defects in helical edge channels of two-dimensional topological insulators

We study backscattering of electrons and conductance suppression in a helical edge channel in two-dimensional topological insulators with broken axial spin symmetry in the presence of nonmagnetic point defects that create bound states. In this system the tunneling coupling of the edge and bound states results in the formation of composite helical edge states in which all four partners of both Kramers pairs of the conventional helical edge states and bound states are mixed. The backscattering is considered as a result of inelastic two-particle scattering of electrons, which are in these composite states. Within this approach we find that sufficiently strong backscattering occurs even if the defect creates only one energy level. The effect is caused by electron transitions between the composite states with energy near the bound state level. We study the deviation from the quantized conductance due to scattering by a single defect as a function of temperature and Fermi level. The results are generalized to the case of scattering by many different defects with energy levels distributed over the band gap. In this case, the conductance deviation turns out to be quite strong and comparable with experiment even at a sufficiently low density of defects. Interestingly, under certain conditions, the temperature dependence of the conductance deviation becomes very weak over a wide temperature range.

cond-mat.mes-hall↗

arXiv2018

Singlet-triplet transition in double quantum dots in two-dimensional topological insulators

We study two-electron states confined in two coupled quantum dots formed by a short-range potential in a two-dimensional topological insulator. It is shown that there is a fairly wide range of the system parameters, where the ground state is a tripletlike state formed by a superposition of two spin-polarized states. Outside this range, the ground state is a singlet. A transition between the singlet and triplet states can be realized by changing the potential of the quantum dots. The effect is caused by a significant change in the energies of the Coulomb repulsion and the exchange interaction of electrons due to the presence of the pseudospin components of the wave function when the band spectrum is inverted.

cond-mat.mes-hall↗

arXiv2017

Electrically controlled crossing of energy levels in quantum dots in two-dimensional topological insulators

We study the energy spectra of bound states in quantum dots (QDs) formed by an electrostatic potential in two-dimensional topological insulator (TI) and their transformation with changes in QD depth and radius. It is found that, unlike a trivial insulator, the energy difference between the levels of the ground state and first excited state can decrease with decreasing the radius and increasing the depth of the QD so that these levels intersect under some critical conditions. The crossing of the levels results in unusual features of optical properties caused by intracenter electron transitions. In particular, it leads to significant changes of light absorption due to electron transitions between such levels and to the transient electroluminescence induced by electrical tuning of QD and TI parameters. In the case of magnetic TIs, the polarization direction of the absorbed or emitted circularly polarized light is changed due to the level crossing.

cond-mat.mes-hall↗

arXiv2016

Optical transitions in two-dimensional topological insulators with point defects

Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the defect-induced bound states are manifested in optical absorption spectra in two-dimensional topological insulators. The calculations are carried out for defects with short-range potential. We find that the defects give rise to the appearance of specific features in the absorption spectrum, which are an inherent property of topological insulators. They have the form of two or three absorption peaks that are due to intracenter transitions between electron-like and hole-like bound states.

cond-mat.mes-hall↗

arXiv2015

Helical bound states in the continuum of the edge states in two dimensional topological insulators

We study bound states embedded into the continuum of edge states in two-dimensional topological insulators. These states emerge in the presence of a short-range potential of a structural defect coupled to the boundary. In this case the edge states flow around the defect and have two resonances in the local density of states. The bound state in continuum (BIC) arises due to an interference of the resonances when they are close to the degeneracy. We find the condition under which the BIC appears, study the spacial distribution of the electron density, and show that the BIC has a helical structure with an electron current circulating around the defect.

cond-mat.mes-hall↗

arXiv2015

Electronic states induced by nonmagnetic defects in two-dimensional topological insulators

We study in-gap electronic states induced by a nonmagnetic defect with short-range potential in two-dimensional topological insulators and trace their evolution as the distance between the defect and the boundary changes. The defect located far from the boundary is found to produce two bound states independently of the sign of its potential. The states are classified as electronlike and holelike. Each of these states can have two types of the spatial distribution of the electron density. The first-type states have a maximum of the density in the center and the second-type ones have a minimum. When the defect is coupled with the boundary, the bound states are transformed correspondingly into resonances of two types and take up the form of the edge states flowing around the defect. Under certain conditions, two resonances interfere giving rise to the formation of a bound state embedded into the continuum spectrum of the edge states flowing around the defect. We calculate the spatial distribution of the electron density in the edge states flowing around the defect and estimate the charge accumulated near the defect. The current density field of the edge states flowing around the defect contains two components one of which flows around the defect and the other circulates around it.

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arXiv2014

Non-magnetic defects in the bulk of two-dimensional topological insulators

We found that non-magnetic defects in two-dimensional topological insulators induce bound states of two kinds for each spin orientation: electron- and hole-like states. Depending on the sign of the defect potential these states can be also of two kinds with different distribution of the electron density. The density has a maximum or minimum in the center. A surprising effect caused by the topological order is a singular dependence of the bound-state energy on the defect potential.

cond-mat.mes-hall↗

arXiv2012

Spin current in an electron waveguide tunnel-coupled to topological insulator

We show that electron tunneling from edge states in two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization $P$ can be very close to unity and the electron current passing through the tunnel contact splits in the waveguide into two branches flowing from the contact. The polarization essentially depends on the electron scattering by the contact and the electron-electron interaction in the one-dimensional edge states. The electron-electron interaction is treated within the Luttinger liquid model. The main effect of the interaction stems from the renormalization of the electron velocity, due to which the polarization increases with the interaction strength. Electron scattering by the contact leads to a decrease in $P$. A specific effect occurs when the bottom of the subbands in the waveguide crosses the Dirac point of the spectrum of edge states when changing the voltage or chemical potential. This leads to changing the direction of the spin current.

cond-mat.mes-hall↗

arXiv2011

Interface states in two-dimensional electron systems with spin-orbital interaction

Interface states at a boundary between regions with different spin-orbit interactions (SOIs) in two-dimensional (2D) electron systems are investigated within the one-band effective mass method with generalized boundary conditions for envelope functions. We have found that the interface states unexpectedly exist even if the effective interface potential equals zero. Depending on the system parameters, the energy of these states can lie in either or both forbidden and conduction bands of bulk states. The interface states have chiral spin texture similar to that of the edge states in 2D topological insulators. However, their energy spectrum is more sensitive to the interfacial potential, the largest effect being produced by the spin-dependent component of the interfacial potential. We have also studied the size quantization of the interface states in a strip of 2D electron gas with SOI and found an unusual (non-monotonic) dependence of the quantization energy on the strip width.

cond-mat.mes-hall↗

arXiv2010

Edge states in two-dimensional electron gas with heterogeneous spin-orbit interaction

We show that edge states similar to those known for topological insulators exist in two-dimensional electron system with one-band spectrum in the presence of heterogeneous spin-orbit interaction (SOI). These states appear at boundaries between regions with the SOIs of different kind or between the regions with the SOI and without it. Depending on the system parameters they can appear in an energy range lying both in the forbidden and conduction bands of bulk states. The edge states have chiral spin texture and carry a spin current under the equilibrium. We study also the size quantization of the edge states in a strip structure with two boundaries to find an unusual dependence of the quantization energy on the strip width.

cond-mat.mes-hall↗

arXiv2009

Spin currents in a normal two-dimensional electron gas in contact with a spin-orbit interaction region

Spin effects in a normal two-dimensional (2D) electron gas in lateral contact with a 2D region with spin-orbit interaction are studied. The peculiarity of this system is the presence of spin-dependent scattering of electrons from the interface. This results in an equilibrium edge spin current and nontrivial spin responses to a particle current. We investigate the spatial distribution of the spin currents and spin density under non-equilibrium conditions caused by a ballistic electron current flowing normal or parallel to the interface. The parallel electron current is found to generate the spin density near the interface and to change the edge spin current. The perpendicular electron current changes the edge spin current proportionally to the electron current and produces a bulk spin current penetrating deep into the normal region. This spin current has two components, one of which is directed normal to the interface and polarized parallel to it, and the second is parallel to the interface and is polarized in the plane perpendicular to the contact line. Both spin currents have a high degree of polarization ($\sim 40-60%$).

cond-mat.mes-hall↗

arXiv2009

Spin polarization of electron current through a potential barrier in two-dimensional structures with spin-orbit interaction

We show that an initially unpolarized electron flow acquires spin polarization after passing through a lateral barrier in two-dimensional (2D) system with spin-orbit interaction (SOI) even if the current is directed normally to the barrier. The generated spin current depends on the distance from the barrier. It oscillates with the distance in the vicinity of the barrier and asymptotically reaches a constant value. The most efficient generation of the spin current (with polarization above 50%) occurs, when the Fermi energy is near the potential barrier maximum. Since the spin current in SOI medium is not unambiguously defined we propose to pass this current from the SOI region into a contacting region without SOI and show, that the spin polarization loss under such transmission can be negligible.

cond-mat.mes-hall↗

arXiv2008

Equilibrium edge spin currents in two-dimensional electron systems with spin-orbit interaction

We find a specific mechanism of background spin currents in two-dimensional electron systems with spatially nonuniform spin-orbit interaction (SOI) at thermodynamic equilibrium, in particular, in the systems consisting of regions with and without SOI. The spin density flows tangentially to the boundary in the normal and SOI regions within a layer of the width determined by the SOI strength. The density of these edge currents significantly exceeds the bulk spin current density. The spin current is polarized normally to the boundary. The spatial distribution of equilibrium spin currents is investigated in detail in the case of a step-like variation of the SOI strength and potential at the interface.

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