Searcharxiv⌕ Search

arXiv subjects

Aleksey E. Bolotnikov

Publications and source records attributed to Aleksey E. Bolotnikov.

3 recordsLinked to original sources

The Future of Gamma-Ray Experiments in the MeV-EeV Range

Gamma-rays, the most energetic photons, carry information from the far reaches of extragalactic space with minimal interaction or loss of information. They bring messages about particle acceleration in environments so extreme they cannot be reproduced on earth for a closer look. Gamma-ray astrophysics is so complementary with collider work that particle physicists and astroparticle physicists are often one in the same. Gamma-ray instruments, especially the Fermi Gamma-ray Space Telescope, have been pivotal in major multi-messenger discoveries over the past decade. There is presently a great deal of interest and scientific expertise available to push forward new technologies, to plan and build space- and ground-based gamma-ray facilities, and to build multi-messenger networks with gamma rays at their core. It is therefore concerning that before the community comes together for planning exercises again, much of that infrastructure could be lost to a lack of long-term planning for support of gamma-ray astrophysics. Gamma-rays with energies from the MeV to the EeV band are therefore central to multiwavelength and multi-messenger studies to everything from astroparticle physics with compact objects, to dark matter studies with diffuse large scale structure. These goals and new discoveries have generated a wave of new gamma-ray facility proposals and programs. This paper highlights new and proposed gamma-ray technologies and facilities that have each been designed to address specific needs in the measurement of extreme astrophysical sources that probe some of the most pressing questions in fundamental physics for the next decade. The proposed instrumentation would also address the priorities laid out in the recent Astro2020 Decadal Survey, a complementary study by the astrophysics community that provides opportunities also relevant to Snowmass.

astro-ph.HE↗

Effects of Bulk and Surface Conductivity on the Performance of CdZnTe Pixel Detectors

We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition, the existence of a thin (10-100 A) oxide layer on the surface of CZT, formed during the fabrication process, affects both bulk and surface leakage currents. We demonstrate that the measured I-V dependencies of bulk current can be explained by considering the CZT detector as a metal-semiconductor-metal system with two back-to-back Schottky-barrier contacts. The high surface leakage current is apparently due to the presence of a low-resistivity surface layer that has characteristics which differ considerably from those of the bulk material. This surface layer has a profound effect on the charge collection efficiency in detectors with multi-contact geometry; some fraction of the electric field lines originated on the cathode intersects the surface areas between the pixel contacts where the charge produced by an ionizing particle gets trapped. To overcome this effect we place a grid of thin electrodes between the pixel contacts; when the grid is negatively biased, the strong electric field in the gaps between the pixels forces the electrons landing on the surface to move toward the contacts, preventing the charge loss. We have investigated these effects by using CZT pixel detectors indium bump bonded to a custom-built VLSI readout chip.

physics.ins-det↗

Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors

In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the experimental data yield 0.78-0.79 eV for the Pt-CZT Schottky barrier height, and <20 V for the voltage required to deplete a 2 mm thick CZT detector. We demonstrate that at high bias the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely by the interfacial layer between the contact and CZT material.

physics.ins-det↗