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Alessandro D Elia

Publications and source records attributed to Alessandro D Elia.

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Phase-Transition-Driven Hyperbolic Optical Response and Directional Polaritons in Epitaxial VO2 Thin Films

Optical anisotropy in crystalline solids enables direction-dependent light-matter interactions and underpins a variety of advanced photonic functionalities. In this context, Vanadium dioxide (VO2) represents a prototypical material that undergoes a reversible MIT near 67°C, accompanied by pronounced electronic, structural, and optical modifications. The MIT not only dramatically modifies the VO2 electrical conductivity but also reshapes its anisotropic optical response, making VO2 an exceptional platform for dynamically tunable photonic and optoelectronic devices. In this work, we investigate how the intrinsic crystalline anisotropy of VO2 induces a hyperbolic optical behavior in the metallic rutile phase. We study two epitaxial VO2 thin films of different thicknesses grown on (110) oriented MgF2 substrates. Broadband polarized spectroscopic measurements, spanning the infrared to UV spectral range, are employed to independently investigate the optical response in both the monoclinic and rutile phases. From these measurements, we extract the optical conductivity and the dielectric function, revealing a pronounced anisotropy in the rutile metallic phase, with an enhanced free-carrier response along the rutile c axis. Our data show that, within a narrow near-infrared spectral window, the real parts of the dielectric tensor components along the two principal axes acquire opposite signs, indicating the emergence of a hyperbolic type-II dispersion. The hyperbolic response is quantitatively evaluated through the quality factor and the degree of dielectric anisotropy, enabling a systematic assessment of VO2 as a thermally switchable, hyperbolic optical medium. These findings expand the understanding of anisotropy-driven optical phenomena in phase-change materials and highlight VO2 thin films as a promising platform for tunable and reconfigurable photonic applications.

physics.optics

Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical doping by Cs atoms performed under ultra-high vacuum conditions. By PL measurements we identify two interlayer excitons and assign them to the momentum-indirect Q-Gamma and K-Gamma transitions. The energies of these excitons are in a very good agreement with ab initio calculations. We find that the Q-Gamma interlayer exciton is robust to the electron doping and is present at room temperature even at a high charge carrier concentration. Submicrometer angle-resolved photoemission spectroscopy (micro-ARPES) reveals charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayer without changing the band alignment. This leads to a small (10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge doping opens up an opportunity of using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers.

cond-mat.mes-hall