arXiv subjects

Alessandro Grillo

Publications and source records attributed to Alessandro Grillo.

17 recordsLinked to original sources

arXiv2022

The Monitoring Logging and Alarm System of the ASTRI Mini-Array gamma-ray air-Cherenkov experiment at the Observatorio del Teide

The ASTRI Mini-Array is a project for the Cherenkov astronomy in the TeV energy range. ASTRI Mini-Array consists of nine Imaging Atmospheric Cherenkov telescopes located at the Teide Observatory (Canarias Islands). Large volumes of monitoring and logging data result from the operation of a large-scale astrophysical observatory. In the last few years, several "Big Data" technologies have been developed to deal with such volumes of data, especially in the Internet of Things (IoT) framework. We present the Monitoring, Logging, and Alarm (MLA) system for the ASTRI Mini-Array aimed at supporting the analysis of scientific data and improving the operational activities of the telescope facility. The MLA system was designed and built considering the latest software tools and concepts coming from Big Data and IoT to respond to the challenges posed by the operation of the array. A particular relevance has been given to satisfying the reliability, availability, and maintainability requirements towards all the array sub-systems and auxiliary devices. The system architecture has been designed to scale up with the number of devices to be monitored and with the number of software components to be considered in the distributed logging system.

astro-ph.IM↗

arXiv2022

Optimization of the storage database for the Monitoring system of the CTA

We present preliminary test results for the correct sizing of the bare metal hardware that will host the database of the Monitoring system (MON) for the Cherenkov Telescope Array (CTA). The MON is the subsystem of the Array Control and Data Acquisition System (ACADA) that is responsible for monitoring and logging the overall CTA array. It acquires and stores monitoring points and logging information from the array elements, at each of the CTA sites. MON is designed and built in order to deal with big data time series, and exploits some of the currently most advanced technologies in the fields of databases and Internet of Things (IoT). To dimension the bare metal hardware required by the monitoring system (excluding the logging), we performed the test campaign that is discussed in this paper. We discuss here the best set of parameters and the optimized configuration to maximize the database data writing in terms of the number of updated rows per second. We also demonstrate the feasibility of our approach in the frame of the CTA requirements.

astro-ph.IM↗

arXiv2021

Memory effects in black phosphorus field effect transistors

We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with endurance over 200 cycles and retention longer than 30 minutes. We show that the use of a protective poly (methyl methacrylate) layer, positioned on top of the black phosphorus channel, does not affect the electrical properties of the device but avoids the degradation caused by the exposure to air.

cond-mat.mes-hall↗

arXiv2021

LOgging UnifieD for ASTRI Mini Array

The ASTRI (Astrofisica con Specchi a Tecnologia Replicante Italiana) Mini-Array (MA) project is an international collaboration led by the Italian National Institute for Astrophysics (INAF). ASTRI MA is composed of nine Cherenkov telescopes operating in the energy range 1-100 TeV, and it aims to study very high-energy gamma ray astrophysics and optical intensity interferometry of bright stars. ASTRI MA is currently under construction, and will be installed at the site of the Teide Observatory in Tenerife (Spain). The hardware and software system that is responsible of monitoring and controlling all the operations carried out at the ASTRI MA site is the Supervision Control and Data Acquisition (SCADA). The LOgging UnifieD (LOUD) subsystem is one of the main components of SCADA. It provides the service responsible for collecting, filtering, exposing and storing log events collected by all the array elements (telescopes, LIDAR, devices, etc.). In this paper, we present the LOUD architecture and the software stack explicitly designed for distributed computing environments exploiting Internet of Things technologies (IoT).

astro-ph.IM↗

arXiv2021

The Monitoring, Logging, and Alarm system for the Cherenkov Telescope Array

We present the current development of the Monitoring, Logging and Alarm subsystems in the framework of the Array Control and Data Acquisition System (ACADA) for the Cherenkov Telescope Array (CTA). The Monitoring System (MON) is the subsystem responsible for monitoring and logging the overall array (at each of the CTA sites) through the acquisition of monitoring and logging information from the array elements. The MON allows us to perform a systematic approach to fault detection and diagnosis supporting corrective and predictive maintenance to minimize the downtime of the system. We present a unified tool for monitoring data items from the telescopes and other devices deployed at the CTA array sites. Data are immediately available for the operator interface and quick-look quality checks and stored for later detailed inspection. The Array Alarm System (AAS) is the subsystem that provides the service that gathers, filters, exposes, and persists alarms raised by both the ACADA processes and the array elements supervised by the ACADA system. It collects alarms from the telescopes, the array calibration, the environmental monitoring instruments and the ACADA systems. The AAS sub-system also creates new alarms based on the analysis and correlation of the system software logs and the status of the system hardware providing the filter mechanisms for all the alarms. Data from the alarm system are then sent to the operator via the human-machine interface.

astro-ph.IM↗

arXiv2021

Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors

Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by environmental pressure. Indeed, positive photoconductivity observed in high vacuum converts to negative photoconductivity when the pressure is rised. Density functional theory calculations confirm that physisorbed oxygen molecules on the PtSe_2 surface act as acceptors. The desorption of oxygen molecules from the surface, caused by light irradiation, leads to decreased carrier concentration in the channel conductivity. The understanding of the charge transfer occurring between the physisorbed oxygen molecules and the PtSe_2 film provides an effective route for modulating the density of carriers and the optical properties of the material.

cond-mat.mtrl-sci↗

arXiv2021

Graphene-silicon device for visible and infrared photodetection

The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by $Si_3N_4$, produces a Gr-Si device in which the parallel MIS consists of a $Gr-Si_3N_4-Si$ structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to $10^4$. The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height at zero bias, ${\phi}_{b0}=0.24 eV$, the effective Richardson's constant, $A^*=7 \cdot 10^{-10} AK^{-2}cm^{-2}$, and the diode ideality factor n=2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity up to 350 mA/W and external quantum efficiency (EQE) up to 75% is achieved in the 500-1200 nm wavelength range. A decrease of responsivity to 0.4 mA/W and EQE to 0.03% is observed above 1200 nm, that is in the IR region beyond the silicon optical bandgap, in which photoexcitation is driven by graphene. Finally, a model based on two back-to-back diodes, one for the Gr-Si junction. the other for the $Gr-Si_3N_4-Si$ MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.

cond-mat.mes-hall↗

arXiv2020

A current-voltage model for double Schottky barrier devices

Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical properties of mono and two-dimensional nanostructured materials, although their impact on the current-voltage characteristics has been frequently neglected or misunderstood. In this work, we propose a single equation to describe the current-voltage characteristics of two-terminal semiconductor devices with Schottky contacts. We apply the equation to numerically simulate the electrical behaviour for both ideal and non-ideal Schottky barriers. The proposed model can be used to directly estimate the Schottky barrier height and the ideality factor. We apply it to perfectly reproduce the experimental current-voltage characteristics of ultrathin molybdenum disulphide or tungsten diselenide nanosheets and tungsten disulphide nanotubes. The model constitutes a useful tool for the analysis and the extraction of relevant transport parameters in any two-terminal device with Schottky contacts.

physics.app-ph↗

arXiv2020

Gate-controlled field emission current from MoS$_2$ nanosheets

Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS$_2$ nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS$_2$ electron affinity, enables a new field-effect transistor based on field emission.

physics.app-ph↗

arXiv2020

Field emission from two-dimensional GeAs

GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. Field emission occurs with a turn-on field of ~80 V/{\mu}m and attains a current density higher than 10 A/cm^2, following the general Fowler-Nordheim model with high reproducibility.

physics.app-ph↗

arXiv2020

Field emission characteristics of InSb patterned nanowires

InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of about 1$\mu A$, corresponding to a current density as high as 10$^4$ A/cm$^2$. Stability and robustness of nanowire is probed by monitoring field emission current for about three hours. By tuning the cathode-anode separation distance in the range 500nm - 1300nm, the field enhancement factor and the turn-on field exhibit a non-monotonic dependence, with a maximum enhancement $\beta \simeq $ 78 and a minimum turn-on field $E_{ON} \simeq$ 0.033 V/nm for a separation d =900nm. The reduction of spatial separation between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement ($\beta <$ 60) and increased turn-on field ($E_{ON} \simeq $ 0.050 V/nm). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm.

cond-mat.mes-hall↗

arXiv2019

Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods

The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of the gate-voltage dependence of the carrier mobility. We find that the gate voltage modulates the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that the raising temperature lowers the carrier mobility, has negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance an be achieved by the zig-zag shaping of the Ni contact.

physics.app-ph↗

arXiv2019

Field Emission Characterization of MoS2 Nanoflowers

Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down to 1-100um2. We demonstrate that MoS2 nanoflowers can be competitive with other well-established field emitters. Indeed, we show that a stable field emission current can be measured with a turn-on field as low as 12 V um-1 and a field enhancement factor up to 880 at 600nm cathode-anode separation distance.

cond-mat.mes-hall↗

arXiv2019

Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors

A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristic of the device as required in high-performance logic circuits. The transistor is immune from short channel effects but is affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after several minutes anneal at room temperature. The work paves the way toward the exploitation of PdSe2 in electronic devices by providing an experiment-based and deeper understanding of charge transport in PdSe2 transistors subjected to electrical stress and other external agents.

cond-mat.mes-hall↗

arXiv2018

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky-barrier limited injection at the grounded junction. The device achieves a photo responsivity greater than 2.5 AW-1 under 5 mWcm-2 white-LED light. By comparing two- and four-probe measurements, we demonstrate that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS2 channel rather than effects of the Ti/MoS2 interface.

cond-mat.mes-hall↗

arXiv2013

The Site of the ASTRI SST-2M Telescope Prototype

ASTRI is a Flagship Project financed by the Italian Ministry of Education, University and Research, and led by the Italian National Institute of Astrophysics, INAF. Primary goal of the ASTRI project is the design and production of an end-to-end prototype of Small Size Telescope for the CTA (Cherenkov Telescope Array) in a dual-mirror configuration (SST-2M) equipped with a camera at the focal plane composed by an array of Silicon Photo-Multipliers and devoted to the investigation of the highest gamma-ray energy band. The ASTRI SST-2M prototype will be placed at the INAF M.G. Fracastoro observing station in Serra La Nave on the Etna Mountain near Catania, Italy. After the verification tests, devoted to probe the technological solutions adopted, the ASTRI SST-2M prototype will perform scientific observations on the Crab Nebula and on some of the brightest TeV sources. Here we present the Serra La Nave site, its meteorological and weather conditions, the sky darkness and visibility, and the complex of auxiliary instrumentation that will be used on site to support the calibration and science verification phase as well as the regular data reconstruction and analysis of the ASTRI SST-2M prototype.

astro-ph.IM↗

arXiv2013

The ASTRI SST-2M Prototype: Camera and Electronics

ASTRI is a Flagship Project financed by the Italian Ministry of Education, University and Research, and led by INAF, the Italian National Institute of Astrophysics. The primary goal of the ASTRI project is the realization of an end-to-end prototype of a Small Size Telescope for the Cherenkov Telescope Array. The prototype, named ASTRI SST-2M, is based on a completely new double mirror optics design and will be equipped with a camera made of a matrix of SiPM detectors. Here we describe the ASTRI SST-2M camera concept: basic idea, detectors, electronics, current status and some results coming from experiments in lab.

astro-ph.IM↗