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Alessandro Rocchi

Publications and source records attributed to Alessandro Rocchi.

2 recordsLinked to original sources

Design a TDC in SiGe for RPC's electronics Front-end for the use in a high-rate experiment

With the new generation of the RPC, it is possible to work with induced signals of hundreds $μV$, hence the front-end electronics is an important and delicate part of the detector in order to get a detectable signal. The electronic chain is made up of an amplifier, a discriminator, a TDC. The new front-end is realized with the use of silicon-germanium (SiGe) components, provided by IHP microelectronics. With this technology we can implement BJT and CMOS transistors on the same chip. The benefit of this improvement is to minimize: power consumption of the channels ($2 ÷3$ $ \frac{mW}{ch}$), noise (500 $e^-$ r.m.s), radiation hardness (10 kGy,$10^3$ $\frac{n}{cm}$) and it maximizes the speed of response electronics. In this work I will highlight the first TDC prototypes' results. The TDC uses a local oscillator, that has an oscillation range between $0.6 ÷3 $ GHz, and a the temporal jitter of 15 ps. The data output from the TDC are presented in binary in order to lighten data processing to the acquisition system. Moreover, we are studying a way to minimize system latency. This optimization involves the addition of a serializer (PISO) that sends the TDC data output to the acquisition system at 2 GHz.

physics.ins-det

Development of a new Front End electronics in Silicon and Silicon-Germanium technology for the Resistive Plate Chamber detector for high rate experiments

The upgrade of the Resistive Plate Chamber (RPC) detector, in order to increase the detector rate capability and to be able to work efficiently in high rate environment, consists in the reduction of the operating voltage along with the detection of signals which are few hundred μV small. The approach chosen by this project to achieve this objective is to develop a new kind of Front End electronics which, thanks to a mixed technology in Silicon and Silicon-Germanium, enhance the detector performances increasing its rate capability. The Front End developed is composed by a preamplifier in Silicon BJT technology with a very low inner noise (1000 $e^{-}$ rms) and an amplification factor of 0.3-0.4 mV/fC and a new kind of discriminator in SiGe HJT technology which allows a minimum threshold of the order of 0.5 mV. The performances of this kind of Front End will be shown. The results are obtained by using the CERN H8 beamline with a full-size RPC chamber of 1 mm gas gap and 1.2 mm thickness of electrodes equipped with this kind of Front End electronics.

physics.ins-det