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Alex Abelson

Publications and source records attributed to Alex Abelson.

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Probing Coordination Environments in Buried Oxides of Aluminum Josephson Junctions by Resonant X-ray Reflectivity

Decoherence remains a critical obstacle to achieving high-fidelity, scalable superconducting qubits, with the tunnel barrier of Josephson junctions a key source of loss. Here we apply resonant X-ray reflectivity to non-destructively probe the electronic structure of buried layers in Al/AlO$_x$/Al Josephson junctions. At the Al $K$-edge, energy-dependent modulations in the reflectivity maps enable Kramers-Kronig-constrained extraction of the layer-resolved atomic scattering factors. The analysis reveals that the barrier coordination evolves from more tetrahedral toward predominantly octahedral character with increasing oxidation pressure. At the interfaces, the lower metal-oxide boundary is comparatively under-coordinated and disordered relative to the upper interface. Comparison with simulated X-ray absorption spectra identifies the dominant coordination motifs within the oxide and its interfaces, providing depth-resolved structural insight that constrains microscopic models of two-level system formation. These results link growth conditions, local coordination environments, and junction electronic properties, demonstrating resonant X-ray reflectivity as a powerful tool for probing the microscopic materials properties of Josephson junctions and providing a materials-level framework for mitigating decoherence in superconducting qubits.

cond-mat.mtrl-sci

Growth and Structure of alpha-Ta films for Quantum Circuit Integration

Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. Remaining loss pathways originate in microscopic defects which manifest as two level systems (TLS) at low temperature. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we investigate the growth of tantalum using magnetron sputtering on sapphire, Si, and photoresist substrates. In the case of sapphire, we present procedures for growth of fully-oriented films with alpha-Ta [1 1 1] // Al2O3 [0 0 0 1] and alpha-Ta [1 -1 0] // Al2O3 [1 0 -1 0] orientational relationships, and having residual resistivity ratios (RRR) ~ 60 for 220 nm thick films. On Si, we find a complex grain texturing with Ta [1 1 0] normal to the substrate and RRR ~ 30. We further demonstrate airbridge fabrication using Nb to nucleate alpha-Ta on photoresist surfaces. For the films on sapphire, resonators show TLS-limited quality factors of 1.3 +/- 0.3 x 10^6 at 10 mK (for waveguide gap and conductor widths of 3 microns and 6 microns, respectively). Structural characterization using scanning electron microscopy, X-ray diffraction, low temperature transport, secondary ion mass spectrometry, and transmission electron microscopy reveal the dependence of residual impurities and screw dislocation density on processing conditions. The results provide practical insights for fabrication of advanced superconducting devices including qubit arrays, and guide future work on crystallographically deterministic qubit fabrication.

cond-mat.supr-con

Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS

The efficiency of nanoparticle (NP) solar cells has grown impressively in recent years, exceeding 16%. However, the carrier mobility in NP solar cells, and in other optoelectronic applications remains low, thus critically limiting their performance. Therefore, carrier transport in NP solids needs to be better understood to further improve the overall efficiency of NP solar cell technology. However, it is technically challenging to simulate experimental scale samples, as physical processes from atomic to mesoscopic scales all crucially impact transport. To rise to this challenge, here we report the development of TRIDENS: the Transport in Defected Nanoparticle Solids Simulator, that adds three more hierarchical layers to our previously developed HINTS code for nanoparticle solar cells. In TRIDENS, we first introduced planar defects, such as twin planes and grain boundaries into individual NP SLs that comprised the order of 10^3 NPs. Then we used HINTS to simulate the transport across tens of thousands of defected NP SLs, and constructed the distribution of the NP SL mobilities with planar defects. Second, the defected NP SLs were assembled into a resistor network with more than 10^4 NP SLs, thus representing about 10^7 individual NPs. Finally, the TRIDENS results were analyzed by finite size scaling to explore whether the percolation transition, separating the phase where the low mobility defected NP SLs percolate, from the phase where the high mobility undefected NP SLs percolate drives a low-mobility-to-high-mobility transport crossover that can be extrapolated to macroscopic length scales. For the theoretical description, we adapted the Efros-Shklovskii bimodal mobility distribution percolation model. We demonstrated that the ES bimodal theory's two-variable scaling function is an effective tool to quantitatively characterize this low-mobility-to-high-mobility transport crossover.

cond-mat.mes-hall

Low-Frequency Electronic Noise in Superlattice and Random-Packed Thin Films of Colloidal Quantum Dots

We report measurements of low-frequency electronic noise in ordered superlattice, weakly-ordered and random-packed thin films of 6.5 nm PbSe quantum dots prepared using several different ligand chemistries. For all samples, the normalized noise spectral density of the dark current revealed a Lorentzian component, reminiscent of the generation-recombination noise, superimposed on the 1/f background (f is the frequency). An activation energy of 0.3 eV was extracted from the temperature dependence of the noise spectra. The noise level in the ordered films was lower than that in the weakly-ordered and random-packed films. A large variation in the magnitude of the noise spectral density was also observed in samples with different ligand treatments. The obtained results are important for application of colloidal quantum dot films in photodetectors.

cond-mat.mes-hall