arXiv subjects

Alex K. Jones

Publications and source records attributed to Alex K. Jones.

33 records · Page 2Linked to original sources

arXiv2023

Parallel Driving for Fast Quantum Computing Under Speed Limits

Increasing quantum circuit fidelity requires an efficient instruction set to avoid errors from decoherence. The choice of a two-qubit (2Q) hardware basis gate depends on a quantum modulator's native Hamiltonian interactions and applied control drives. In this paper, we propose a collaborative design approach to select the best ratio of drive parameters that determine the best basis gate for a particular modulator. This requires considering the theoretical computing power of the gate along with the practical speed limit of that gate, given the modulator drive parameters. The practical speed limit arises from the couplers' tolerance for strong driving when one or more pumps is applied, for which some combinations can result in higher overall speed limits than others. Moreover, as this 2Q basis gate is typically applied multiple times in succession, interleaved by 1Q gates applied directly to the qubits, the speed of the 1Q gates can become a limiting factor for the quantum circuit. We propose a parallel-drive approach that drives the modulator and qubits simultaneously, allowing a richer capability of the 2Q basis gate and in some cases for this 1Q drive time to be absorbed entirely into the 2Q operation. This allows increasingly short duration 2Q gates while mitigating a significant source of overhead in some quantum systems. On average, this approach can decrease circuit duration by 17.84% and decrease infidelity for random 2Q gates by 10.5% compared to the best basic 2Q gate, $\sqrt{\texttt{iSWAP}}$.

quant-ph↗

arXiv2022

Co-Designed Architectures for Modular Superconducting Quantum Computers

Noisy, Intermediate Scale Quantum (NISQ) computers have reached the point where they can show the potential for quantum advantage over classical computing. Unfortunately, NISQ machines introduce sufficient noise that even for moderate size quantum circuits the results can be unreliable. We propose a co-designed superconducting quantum computer using a Superconducting Nonlinear Asymmetric Inductive eLement (SNAIL) modulator. The SNAIL modulator is designed by considering both the ideal fundamental qubit gate operation while maximizing the qubit coupling capabilities. First, the SNAIL natively implements $\sqrt[n]{\texttt{iSWAP}}$ gates realized through proportionally scaled pulse lengths. This naturally includes $\sqrt{\texttt{iSWAP}}$, which provides an advantage over $\texttt{CNOT}$ as a basis gate. Second, the SNAIL enables high-degree couplings that allow rich and highly parallel qubit connection topologies without suffering from frequency crowding. Building on our previously demonstrated SNAIL-based quantum state router we propose a quantum 4-ary tree and a hypercube inspired corral built from interconnected quantum modules. We compare their advantage in data movement based on necessary \texttt{SWAP} gates to the traditional lattice and heavy-hex lattice used in latest commercial quantum computers. We demonstrate the co-design advantage of our SNAIL-based machine with $\sqrt{\texttt{iSWAP}}$ basis gates and rich topologies against $\texttt{CNOT}$/heavy-hex and $\texttt{FSIM}$/lattice for 16-20 qubit and extrapolated designs circa 80 qubit architectures. We compare total circuit time and total gate count to understand fidelity for systems dominated by decoherence and control imperfections, respectively. Finally, we provide a gate duration sensitivity study on further decreasing the SNAIL pulse length to realize $\sqrt[n]{\texttt{iSWAP}}$ qubit systems to reduce decoherence times.

quant-ph↗

arXiv2022

PIRM: Processing In Racetrack Memories

The growth in data needs of modern applications has created significant challenges for modern systems leading a "memory wall." Spintronic Domain Wall Memory (DWM), related to Spin-Transfer Torque Memory (STT-MRAM), provides near-SRAM read/write performance, energy savings and nonvolatility, potential for extremely high storage density, and does not have significant endurance limitations. However, DWM's benefits cannot address data access latency and throughput limitations of memory bus bandwidth. We propose PIRM, a DWM-based in-memory computing solution that leverages the properties of DWM nanowires and allows them to serve as polymorphic gates. While normally DWM is accessed by applying spin polarized currents orthogonal to the nanowire at access points to read individual bits, transverse access along the DWM nanowire allows the differentiation of the aggregate resistance of multiple bits in the nanowire, akin to a multilevel cell. PIRM leverages this transverse reading to directly provide bulk-bitwise logic of multiple adjacent operands in the nanowire, simultaneously. Based on this in-memory logic, PIRM provides a technique to conduct multi-operand addition and two operand multiplication using transverse access. PIRM provides a 1.6x speedup compared to the leading DRAM PIM technique for query applications that leverage bulk bitwise operations. Compared to the leading PIM technique for DWM, PIRM improves performance by 6.9x, 2.3x and energy by 5.5x, 3.4x for 8-bit addition and multiplication, respectively. For arithmetic heavy benchmarks, PIRM reduces access latency by 2.1x, while decreasing energy consumption by 25.2x for a reasonable 10% area overhead versus non-PIM DWM.

cs.ET↗

arXiv2022

FPIRM: Floating-point Processing in Racetrack Memories

Convolutional neural networks (CNN) have become a ubiquitous algorithm with growing applications in mobile and edge settings. We describe a compute-in-memory (CIM) technique called FPIRM using Racetrack Memory (RM) to accelerate CNNs for edge systems. Using transverse read, a technique that can determine the number of '1's multiple adjacent domains, FPIRM can efficiently implement multi-operand bulk-bitwise and addition computations, and two-operand multiplication. We discuss how FPIRM can implement both variable precision integer and floating point arithmetic. This allows both CNN inference and on-device training without expensive data movement to the cloud. Based on these functions we demonstrate implementation of several CNNs with back propagation using RM CIM and compare these to state-of-the-art implementations of CIM inference and training in Field-Programmable Gate Arrays. During training FPIRM improves by 2$\times$ the efficiency, by reducing the energy consumption by at least 27% and increasing the throughput by at least 18% against FPGA.

cs.ET↗

arXiv2022

Sustainable AI Processing at the Edge

Edge computing is a popular target for accelerating machine learning algorithms supporting mobile devices without requiring the communication latencies to handle them in the cloud. Edge deployments of machine learning primarily consider traditional concerns such as SWaP constraints (Size, Weight, and Power) for their installations. However, such metrics are not entirely sufficient to consider environmental impacts from computing given the significant contributions from embodied energy and carbon. In this paper we explore the tradeoffs of convolutional neural network acceleration engines for both inference and on-line training. In particular, we explore the use of processing-in-memory (PIM) approaches, mobile GPU accelerators, and recently released FPGAs, and compare them with novel Racetrack memory PIM. Replacing PIM-enabled DDR3 with Racetrack memory PIM can recover its embodied energy as quickly as 1 year. For high activity ratios, mobile GPUs can be more sustainable but have higher embodied energy to overcome compared to PIM-enabled Racetrack memory.

cs.AR↗

arXiv2022

A Multi-domain Magneto Tunnel Junction for Racetrack Nanowire Strips

Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of parallel or anti-parallel domains in a portion of the DWM nanowire. In this paper we propose a multi-domain magneto-tunnel junction (MTJ) that can detect different resistance levels as a function of a the number of parallel or anti-parallel domains. Using detailed micromagnetic simulation with LLG, we demonstrate the multi-domain MTJ, study the benefit of its macro-size on resilience to process variation and present a macro-model for scaling the size of the multi-domain MTJ. Our results indicate scalability to seven-domains while maintaining a 16.3mV sense margin.

cs.ET↗

arXiv2022

DNA Pre-alignment Filter using Processing Near Racetrack Memory

Recent DNA pre-alignment filter designs employ DRAM for storing the reference genome and its associated meta-data. However, DRAM incurs increasingly high energy consumption background and refresh energy as devices scale. To overcome this problem, this paper explores a design with racetrack memory (RTM)--an emerging non-volatile memory that promises higher storage density, faster access latency, and lower energy consumption. Multi-bit storage cells in RTM are inherently sequential and thus require data placement strategies to mitigate the performance and energy impacts of shifting during data accesses. We propose a near-memory pre-alignment filter with a novel data mapping and several shift reduction strategies designed explicitly for RTM. On a set of four input genomes from the 1000 Genome Project, our approach improves performance and energy efficiency by 68% and 52%, respectively, compared to the state of the art proposed DRAM-based architecture.

cs.ET↗

arXiv2022

Pinning Fault Mode Modeling for DWM Shifting

Extreme scaling for purposes of achieving higher density and lower energy continues to increase the probability of memory faults. For domain wall (DW) memories, misalignment faults arise when aligning domains with access points. A previously understudied type of shifting fault, a pinning fault may occur due to non-uniform pinning potential distribution caused by notches with fabrication imperfections. This non-uniformity can pin a wall during current-induced DW motion. This paper provides a model of geometric variations varying width, depth, and curvature variations of a notch, their impacts on the critical shift current, and a study of the resulting impact on fault rates of DW memory systems. An increase in the effective critical shift current due to 5% variation predicts a pinning fault rate on the order of $10^{-8}$ per shift, which results in a mean-time-to-failure of circa 2s for a DW memory system.

cs.ET↗

arXiv2022

Brain-inspired Cognition in Next Generation Racetrack Memories

Hyperdimensional computing (HDC) is an emerging computational framework inspired by the brain that operates on vectors with thousands of dimensions to emulate cognition. Unlike conventional computational frameworks that operate on numbers, HDC, like the brain, uses high dimensional random vectors and is capable of one-shot learning. HDC is based on a well-defined set of arithmetic operations and is highly error-resilient. The core operations of HDC manipulate HD vectors in bulk bit-wise fashion, offering many opportunities to leverage parallelism. Unfortunately, on conventional Von-Neuman architectures, the continuous movement of HD vectors among the processor and the memory can make the cognition task prohibitively slow and energy-intensive. Hardware accelerators only marginally improve related metrics. On the contrary, only partial implementation of an HDC framework inside memory, using emerging memristive devices, has reported considerable performance/energy gains. This paper presents an architecture based on racetrack memory (RTM) to conduct and accelerate the entire HDC framework within the memory. The proposed solution requires minimal additional CMOS circuitry and uses a read operation across multiple domains in RTMs called transverse read (TR) to realize exclusive-or (XOR) and addition operations. To minimize the overhead the CMOS circuitry, we propose an RTM nanowires-based counting mechanism that leverages the TR operation and the standard RTM operations. Using language recognition as the use case demonstrates 7.8x and 5.3x reduction in the overall runtime and energy consumption compared to the FPGA design, respectively. Compared to the state-of-the-art in-memory implementation, the proposed HDC system reduces the energy consumption by 8.6x.

cs.LG↗

arXiv2021

XDWM: A 2D Domain Wall Memory

Domain-Wall Memory (DWM) structures typically bundle nanowires shifted together for parallel access. Ironically, this organization does not allow the natural shifting of DWM to realize \textit{logical shifting} within data elements. We describe a novel 2-D DWM cross-point (X-Cell) that allows two individual nanowires placed orthogonally to share the X-Cell. Each nanowire can operate independently while sharing the value at the X-Cell. Using X-Cells, we propose an orthogonal nanowire in the Y dimension overlaid on a bundle of X dimension nanowires for a cross-DWM or XDWM. We demonstrate that the bundle shifts correctly in the X-Direction, and that data can be logically shifted in the Y-direction providing novel data movement and supporting processing-in-memory. We conducted studies on the requirements for physical cell dimensions and shift currents for XDWM. Due to the non-standard domain, our micro-magnetic studies demonstrate that XDWM introduces a shift current penalty of 6.25% while shifting happens in one nanowire compared to a standard nanowire. We also demonstrate correct shifting using nanowire bundles in both the X- and Y- dimensions. Using magnetic simulation to derive the values for SPICE simulation we show the maximum leakage current between nanowires when shifting the bundle together is $\le3$% indicating that sneak paths are not problematic for XDWM.

cs.ET↗

arXiv2021

Virtual Coset Coding for Encrypted Non-Volatile Memories with Multi-Level Cells

PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of the asymmetric patterns of 0s and 1s in the data to reduce write energy. Because the memory is non-volatile, data can be recovered via physical attack or across system reboot cycles. To protect information stored in PCM against these attacks requires encryption. Unfortunately, most encryption algorithms scramble 0s and 1s in the data, effectively removing any patterns and negatively impacting schemes that leverage data bias and similarity to reduce write energy. In this paper, we introduce Virtual Coset Coding (VCC) as a workload-independent approach that reduces costly symbol transitions for storing encrypted data. VCC is based on two ideas. First, using coset encoding with random coset candidates, it is possible to effectively reduce the frequency of costly bit/symbol transitions when writing encrypted data. Second, a small set of random substrings can be used to achieve the same encoding efficiency as a large number of random coset candidates, but at a much lower encoding/decoding cost. Additionally, we demonstrate how VCC can be leveraged for energy reduction in combination with fault-mitigation and fault-tolerance to dramatically increase the lifetimes of endurance-limited NVMs, such as PCM. We evaluate the design of VCC and demonstrate that it can be implemented on-chip with only a nominal area overhead. VCC reduces dynamic energy by 22-28% while maintaining the same performance. Using our multi-objective optimization approach achieves at least a 36% improvement in lifetime over the state-of-the-art and at least a 50% improvement in lifetime vs. an unencoded memory, while maintaining its energy savings and system performance.

cs.AR↗

arXiv2020

Workshops on Extreme Scale Design Automation (ESDA) Challenges and Opportunities for 2025 and Beyond

Integrated circuits and electronic systems, as well as design technologies, are evolving at a great rate -- both quantitatively and qualitatively. Major developments include new interconnects and switching devices with atomic-scale uncertainty, the depth and scale of on-chip integration, electronic system-level integration, the increasing significance of software, as well as more effective means of design entry, compilation, algorithmic optimization, numerical simulation, pre- and post-silicon design validation, and chip test. Application targets and key markets are also shifting substantially from desktop CPUs to mobile platforms to an Internet-of-Things infrastructure. In light of these changes in electronic design contexts and given EDA's significant dependence on such context, the EDA community must adapt to these changes and focus on the opportunities for research and commercial success. The CCC workshop series on Extreme-Scale Design Automation, organized with the support of ACM SIGDA, studied challenges faced by the EDA community as well as new and exciting opportunities currently available. This document represents a summary of the findings from these meetings.

cs.CY↗

arXiv2018

Mitigating Wordline Crosstalk using Adaptive Trees of Counters

High access frequency of certain rows in the DRAM may cause data loss in cells of physically adjacent rows due to crosstalk. The malicious exploit of this crosstalk by repeatedly accessing a row to induce this effect is known as row hammering. Additionally, inadvertent row hammering may also occur due to the natural weighted nature of applications' access patterns. In this paper, we analyze the efficiency of existing approaches for mitigating wordline crosstalk and demonstrate that they have been conservatively designed. Given the unbalanced nature of DRAM accesses, a small group of dynamically allocated counters in banks can deterministically detect hot rows and mitigate crosstalk. Based on our findings, we propose a Counter-based Adaptive Tree (CAT) approach to mitigate wordline crosstalk using adaptive trees of counters to guide appropriate refreshing of vulnerable rows. The key idea is to tune the distribution of the counters to the rows in a bank based on the memory reference patterns. In contrast to deterministic solutions, CAT utilizes fewer counters, making it practically feasible to be implemented on-chip. Compared to existing probabilistic approaches, CAT more precisely refreshes rows vulnerable to crosstalk based on their access frequency. Experimental results on workloads from four benchmark suites show that CAT reduces the Crosstalk Mitigation Refresh Power Overhead in quad-core systems to 7%, which is an improvement over the 21% and 18% incurred in the leading deterministic and probabilistic approaches, respectively. Moreover, CAT incurs very low performance overhead (0.5%). Hardware synthesis evaluation shows that CAT can be implemented on-chip with only a nominal area overhead.

cs.AR↗

arXiv2017

Enabling Fine-Grain Restricted Coset Coding Through Word-Level Compression for PCM

Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM offers high density with low per-byte fabrication cost. However, despite many advantages, such as scalability and low leakage, the energy for programming intermediate states is considerably larger than programing single-level cell PCM. In this paper, we study encoding techniques to reduce write energy for MLC PCM when the encoding granularity is lowered below the typical cache line size. We observe that encoding data blocks at small granularity to reduce write energy actually increases the write energy because of the auxiliary encoding bits. We mitigate this adverse effect by 1) designing suitable codeword mappings that use fewer auxiliary bits and 2) proposing a new Word-Level Compression (WLC) which compresses more than 91% of the memory lines and provides enough room to store the auxiliary data using a novel restricted coset encoding applied at small data block granularities. Experimental results show that the proposed encoding at 16-bit data granularity reduces the write energy by 39%, on average, versus the leading encoding approach for write energy reduction. Furthermore, it improves endurance by 20% and is more reliable than the leading approach. Hardware synthesis evaluation shows that the proposed encoding can be implemented on-chip with only a nominal area overhead.

cs.AR↗

arXiv2017

A Variable Length Coding Framework for Cost Function Reduction in Non-Volatile Memory Systems

Variable length coding for Non-Volatile Memory (NVM) technologies is a promising method to improve memory capacity and system performance through compressing memory blocks. However, compression techniques used to improve capacity or bandwidth utilization do not take into consideration the asymmetric costs of writing 1's and 0's in NVMs. Taking into account this asymmetry, we propose a variable length encoding framework that reduces the cost of writing data into NVM. Our experimental results on 12 workloads of the SPEC CPU2006 benchmark suite show that, when the cost asymmetry is 1:2, the proposed framework is capable of reducing the NVM programming cost by up to 24% more than leading compression approaches and by 12.5% more than the flip-and-write approach which selects between the data and its complement based on the programming cost.

cs.ET↗