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Alex Zettl

Publications and source records attributed to Alex Zettl.

At least 19 recordsLinked to original sources

Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping

The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on electron-beam programmable field-effect transistors (FETs). Using WSe$_2$ as a model system, we demonstrate electron-beam-induced doping that enables reversible, precisely controlled carrier modulation exceeding $10^{13}$ cm$^{-2}$. The in-situ writing, erasing, and rewriting of ambipolar doping of nanoscale patterns was directly visualized by scanning microwave impedance microscopy. This mask-free, lithography-compatible approach can achieve precise band engineering within individual channels, yielding near-ideal subthreshold swings (~ 60 mV/dec) and finely tunable threshold voltages for both carrier types without specialized contact engineering. These capabilities allow on-demand realization of high performance logic, including CMOS inverters with high voltage gains and low power consumption, as well as NAND-to-NOR transitions on the same device via direct polarity rewriting. Our platform offers a scalable and versatile route for rapid prototyping of complementary electronics.

cond-mat.mtrl-sci

Imaging Tunable Luttinger Liquid Systems in van der Waals Heterostructures

One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demonstrate that layer-stacking domain walls (DWs) in van der Waals heterostructures form a broadly tunable Luttinger liquid system including both isolated and coupled arrays. We have imaged the evolution of DW Luttinger liquids under different interaction regimes tuned by electron density using a novel scanning tunneling microscopy (STM) technique. Single DWs at low carrier density are highly susceptible to Wigner crystallization consistent with a spin-incoherent Luttinger liquid, while at intermediate densities dimerized Wigner crystals form due to an enhanced magneto-elastic coupling. Periodic arrays of DWs exhibit an interplay between intra- and inter-chain interactions that gives rise to new quantum phases. At low electron densities inter-chain interactions are dominant and induce a 2D electron crystal composed of phased-locked 1D Wigner crystal in a staggered configuration. Increased electron density causes intra-chain fluctuation potentials to dominate, leading to an electronic smectic liquid crystal phase where electrons are ordered with algebraical correlation decay along the chain direction but disordered between chains. Our work shows that layer-stacking DWs in 2D heterostructures offers new opportunities to explore Luttinger liquid physics.

cond-mat.str-el

Wigner Molecular Crystals from Multi-electron Moir\'e Artificial Atoms

Semiconductor moir\'e superlattices provide a versatile platform to engineer new quantum solids composed of artificial atoms on moir\'e sites. Previous studies have mostly focused on the simplest correlated quantum solid - the Fermi-Hubbard model - where intra-atom interactions are simplified to a single onsite repulsion energy U. These studies have revealed novel quantum phases ranging from Mott insulators to quantum anomalous Hall insulators at a filling of one electron per moir\'e unit cell. New types of quantum solids should arise at even higher filling factors where the multi-electron configuration of moir\'e artificial atoms provides new degrees of freedom. Here we report the experimental observation of Wigner molecular crystals emerging from multi-electron artificial atoms in twisted bilayer WS2 moir\'e superlattices. Moir\'e artificial atoms, unlike natural atoms, can host qualitatively different electron states due to the interplay between quantized energy levels and Coulomb interactions. Using scanning tunneling microscopy (STM), we demonstrate that Wigner molecules appear in multi-electron artificial atoms when Coulomb interactions dominate. Three-electron Wigner molecules, for example, are seen to exhibit a characteristic trimer pattern. The array of Wigner molecules observed in a moir\'e superlattice comprises a new crystalline phase of electrons: the Wigner molecular crystal. We show that these Wigner molecular crystals are highly tunable through mechanical strain, moir\'e period, and carrier charge type. Our study presents new opportunities for exploring quantum phenomena in moir\'e quantum solids composed of multi-electron artificial atoms.

cond-mat.mes-hall

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), especially for p-type materials, is the high electrical contact resistance present at the metal-semiconductor interface. In conventional bulk semiconductors, low resistance ohmic contact is realized through heavy substitutional doping with acceptor or donor impurities at the contact region. The strategy of substitutional doping, however, does not work for p-type 2D semiconductors such as monolayer tungsten diselenide (WSe$_2$).In this study, we developed highly efficient charge-transfer doping with WSe$_2$/$\alpha$-RuCl$_3$ heterostructures to achieve low-resistance ohmic contact for p-type WSe$_2$ transistors. We show that a hole doping as high as 3$\times$10$^{13}$ cm$^{-2}$ can be achieved in the WSe$_2/\alpha$-RuCl$_3$ heterostructure due to its type-III band alignment. It results in an Ohmic contact with resistance lower than 4 k Ohm $\mu$m at the p-type monolayer WSe$_2$/metal junction. at room temperature. Using this low-resistance contact, we demonstrate high-performance p-type WSe$_2$ transistors with a saturation current of 35 $\mu$A$\cdot$ $\mu$m$^{-1}$ and an I$_{ON}$/I$_{OFF}$ ratio exceeding 10$^9$ It could enable future microelectronic devices based on 2D semiconductors and contribute to the extension of Moore's law.

cond-mat.mes-hall

Electrically controlled interlayer trion fluid in electron-hole bilayers

The combination of repulsive and attractive Coulomb interactions in a quantum electron(e)-hole(h) fluid can give rise to novel correlated phases of multiparticle charge complexes such as excitons, trions and biexcitons. Here we report the first experimental realization of an electrically controlled interlayer trion fluid in two-dimensional van der Waals heterostructures. We demonstrate that in the strong coupling regime of electron-hole bilayers, electrons and holes in separate layers can spontaneously form three-particle trion bound states that resemble positronium ions in high energy physics. The interlayer trions can assume 1e-2h and 2e-1h configurations, where electrons and holes are confined in different transition metal dichalcogenide layers. We show that the two correlated holes in 1e-2h trions form a spin-singlet state with a spin gap of ~1meV. By electrostatic gating, the equilibrium state of our system can be continuously tuned into an exciton fluid, a trion fluid, an exciton-trion mixture, a trion-charge mixture or an electron-hole plasma. Upon optical excitation, the system can host novel high-order multiparticle charge complexes including interlayer four-particle complex (tetrons) and five-particle complex (pentons). Our work demonstrates a unique platform to study novel correlated phases of tunable Bose-Fermi mixtures and opens up new opportunities to realize artificial ions/molecules in electronic devices.

cond-mat.mes-hall

Three-dimensional imaging of buried heterointerfaces

We report three-dimensional (3D) structure determination of a twisted hexagonal boron nitride (h-BN) heterointerface from a single-view data set using multislice ptychography. We identify the buried heterointerface between two twisted h-BN flakes with a lateral resolution of 0.57 {\AA} and a depth resolution of 2.5 nm. The latter is a significant improvement (~2.7 times) over the aperture-limited depth resolution of incoherent imaging modes such as annular-dark-field scanning transmission electron microscopy. This is attributed to the diffraction signal extending beyond the aperture edge with the depth resolution set by the curvature of the Ewald sphere. Future advances to this approach could improve the depth resolution to the sub-nanometer level and enable the identification of individual dopants, defects and color centers in twisted heterointerfaces and other materials.

cond-mat.mtrl-sci

Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale

Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the integrated effect of the nucleus, core electrons and valence electrons, and separating their contributions is non-trivial. In this paper, we utilized simultaneously acquired 4D-STEM center of mass (CoM) images and annular dark field (ADF) images to determine the electron charge density in monolayer MoS2. We find that both the core electrons and the valence electrons contribute to the derived electron charge density. However, due to blurring by the probe shape, the valence electron contribution forms a nearly featureless background while most of the spatial modulation comes from the core electrons. Our findings highlight the importance of probe shape in interpreting charge densities derived from 4D STEM.

cond-mat.mtrl-sci

Visualizing and manipulating chiral interface states in a moiré quantum anomalous Hall insulator

Moiré systems made from stacked two-dimensional materials host novel correlated and topological states that can be electrically controlled via applied gate voltages. We have used this technique to manipulate Chern domains in an interaction-driven quantum anomalous Hall insulator made from twisted monolayer-bilayer graphene (tMBLG). This has allowed the wavefunction of chiral interface states to be directly imaged using a scanning tunneling microscope (STM). To accomplish this tMBLG carrier concentration was tuned to stabilize neighboring domains of opposite Chern number, thus providing topological interfaces completely devoid of any structural boundaries. STM tip pulse-induced quantum dots were utilized to induce new Chern domains and thereby create new chiral interface states with tunable chirality at predetermined locations. Theoretical analysis confirms the chiral nature of observed interface states and enables the determination of the characteristic length scale of valley polarization reversal across neighboring tMBLG Chern domains. tMBLG is shown to be a useful platform for imaging the exotic topological properties of correlated moiré systems.

cond-mat.mes-hall

Imaging Moiré Excited States with Photocurrent Tunneling Microscopy

Moiré superlattices provide a highly tunable and versatile platform to explore novel quantum phases and exotic excited states ranging from correlated insulators1-17 to moiré excitons7-10,18. Scanning tunneling microscopy has played a key role in probing microscopic behaviors of the moiré correlated ground states at the atomic scale1,11-15,19. Atomic-resolution imaging of quantum excited state in moiré heterostructures, however, has been an outstanding experimental challenge. Here we develop a novel photocurrent tunneling microscopy by combining laser excitation and scanning tunneling spectroscopy (laser-STM) to directly visualize the electron and hole distribution within the photoexcited moiré exciton in a twisted bilayer WS2 (t-WS2). We observe that the tunneling photocurrent alternates between positive and negative polarities at different locations within a single moiré unit cell. This alternating photocurrent originates from the exotic in-plane charge-transfer (ICT) moiré exciton in the t-WS2 that emerges from the competition between the electron-hole Coulomb interaction and the moiré potential landscape. Our photocurrent maps are in excellent agreement with our GW-BSE calculations for excitonic states in t-WS2. The photocurrent tunneling microscopy creates new opportunities for exploring photoexcited non-equilibrium moiré phenomena at the atomic scale.

cond-mat.mes-hall

Linearly dispersive bands at the onset of correlations in K$_x$C$_{60}$ films

Molecular crystals are a flexible platform to induce novel electronic phases. Due to the weak forces between molecules, intermolecular distances can be varied over relatively larger ranges than interatomic distances in atomic crystals. On the other hand, the hopping terms are generally small, which results in narrow bands, strong correlations and heavy electrons. Here, by growing K$_x$C$_{60}$ fullerides on hexagonal layered Bi$_2$Se$_3$, we show that upon doping the series undergoes a Mott transition from a molecular insulator to a correlated metal, and an in-gap state evolves into highly dispersive Dirac-like fermions at half filling, where superconductivity occurs. This picture challenges the commonly accepted description of the low energy quasiparticles as appearing from a gradual electron doping of the conduction states, and suggests an intriguing parallel with the more famous family of the cuprate superconductors. More in general, it indicates that molecular crystals offer a viable route to engineer electron-electron interactions.

cond-mat.mes-hall

Local spectroscopy of a gate-switchable moiré quantum anomalous Hall insulator

In recent years, correlated insulating states, unconventional superconductivity, and topologically non-trivial phases have all been observed in several moiré heterostructures. However, understanding of the physical mechanisms behind these phenomena is hampered by the lack of local electronic structure data. Here, we use scanning tunnelling microscopy and spectroscopy to demonstrate how the interplay between correlation, topology, and local atomic structure determines the behaviour of electron-doped twisted monolayer-bilayer graphene. Through gate- and magnetic field-dependent measurements, we observe local spectroscopic signatures indicating a quantum anomalous Hall insulating state with a total Chern number of $\pm 2$ at a doping level of three electrons per moiré unit cell. We show that the sign of the Chern number and associated magnetism can be electrostatically switched only over a limited range of twist angle and sample hetero-strain values. This results from a competition between the orbital magnetization of filled bulk bands and chiral edge states, which is sensitive to strain-induced distortions in the moiré superlattice.

cond-mat.mes-hall

Imaging gate-induced molecular melting on a graphene field-effect transistor

Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting and freezing of 2D molecular layers on a graphene field-effect transistor (FET) that allows us to image phase transition dynamics via atomically-resolved scanning tunneling microscopy. Back-gate voltages applied to a F4TCNQ-decorated graphene FET induce reversible transitions between a charge-neutral solid phase and a negatively charged liquid phase. Nonequilibrium molecular melting dynamics are visualized by rapidly heating the graphene surface with electrical current and imaging the resulting evolution toward new equilibrium states. An analytical model has been developed that explains the observed equilibrium mixed-state phases based on spectroscopic measurement of both solid and liquid molecular energy levels. Observed non-equilibrium melting dynamics are consistent with Monte Carlo simulations.

cond-mat.mes-hall

Mapping Charge Excitations in Generalized Wigner Crystals

Transition metal dichalcogenide-based moire superlattices exhibit very strong electron-electron correlations, thus giving rise to strongly correlated quantum phenomena such as generalized Wigner crystal states. Theoretical studies predict that unusual quasiparticle excitations across the correlated gap between upper and lower Hubbard bands can arise due to long-range Coulomb interactions in generalized Wigner crystal states. Here we describe a new scanning single-electron charging (SSEC) spectroscopy technique with nanometer spatial resolution and single-electron charge resolution that enables us to directly image electron and hole wavefunctions and to determine the thermodynamic gap of generalized Wigner crystal states in twisted WS2 moire heterostructures. High-resolution SSEC spectroscopy was achieved by combining scanning tunneling microscopy (STM) with a monolayer graphene sensing layer, thus enabling the generation of individual electron and hole quasiparticles in generalized Wigner crystals. We show that electron and hole quasiparticles have complementary wavefunction distributions and that thermodynamic gaps of order 50meV exist for the 1/3 and 2/3 generalized Wigner crystal states.

cond-mat.mes-hall

Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots

Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations, but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states.

cond-mat.mes-hall

Solving Complex Nanostructures With Ptychographic Atomic Electron Tomography

Transmission electron microscopy (TEM) is a potent technique for the determination of three-dimensional atomic scale structure of samples in structural biology and materials science. In structural biology, three-dimensional structures of proteins are routinely determined using phase-contrast single-particle cryo-electron microscopy from thousands of identical proteins, and reconstructions have reached atomic resolution for specific proteins. In materials science, three-dimensional atomic structures of complex nanomaterials have been determined using a combination of annular dark field (ADF) scanning transmission electron microscopic (STEM) tomography and subpixel localization of atomic peaks, in a method termed atomic electron tomography (AET). However, neither of these methods can determine the three-dimensional atomic structure of heterogeneous nanomaterials containing light elements. Here, we perform mixed-state electron ptychography from 34.5 million diffraction patterns to reconstruct a high-resolution tilt series of a double wall-carbon nanotube (DW-CNT), encapsulating a complex $\mathrm{ZrTe}$ sandwich structure. Class averaging of the resulting reconstructions and subpixel localization of the atomic peaks in the reconstructed volume reveals the complex three-dimensional atomic structure of the core-shell heterostructure with 17 picometer precision. From these measurements, we solve the full $\mathrm{Zr_{11}Te_{50}}$ structure, which contains a previously unobserved $\mathrm{ZrTe_{2}}$ phase in the core. The experimental realization of ptychographic atomic electron tomography (PAET) will allow for structural determination of a wide range of nanomaterials which are beam-sensitive or contain light elements.

physics.app-ph

Observation of a multitude of correlated states at the surface of bulk 1T-TaSe$_2$ crystals

The interplay between electron-electron interactions and structural ordering can yield exceptionally rich correlated electronic phases. We have used scanning tunneling microscopy to investigate bulk 1T-TaSe2 and have uncovered surprisingly diverse correlated surface states thereof. These surface states exhibit the same in-plane charge density wave ordering but dramatically different electronic ground states ranging from insulating to metallic. The insulating variety of surface state shows signatures of a decoupled surface Mott layer. The metallic surface states, on the other hand, exhibit zero-bias peaks of varying strength that suggest Kondo phases arising from coupling between the Mott surface layer and the metallic bulk of 1T-TaSe2. The surface of bulk 1T-TaSe2 thus constitutes a rare realization of the periodic Anderson model covering a wide parameter regime, thereby providing a model system for accessing different correlated phenomena in the same crystal. Our results highlight the central role played by strong correlations in this material family.

cond-mat.str-el

Deep Learning Coherent Diffractive Imaging

We report the development of deep learning coherent electron diffractive imaging at sub-angstrom resolution using convolutional neural networks (CNNs) trained with only simulated data. We experimentally demonstrate this method by applying the trained CNNs to directly recover the phase images from electron diffraction patterns of twisted hexagonal boron nitride, monolayer graphene and a Au nanoparticle with comparable quality to those reconstructed by a conventional ptychographic method. Fourier ring correlation between the CNN and ptychographic images indicates the achievement of a spatial resolution in the range of 0.70 and 0.55 angstrom (depending on different resolution criteria). The ability to replace iterative algorithms with CNNs and perform real-time imaging from coherent diffraction patterns is expected to find broad applications in the physical and biological sciences.

cond-mat.mtrl-sci

Imaging reconfigurable molecular concentration on a graphene field-effect transistor

The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables precisely controlled impurity doping of graphene devices and also provides a new method for determining molecular energy level alignment based on the gate-dependence of molecular concentration. The gate-tunable molecular concentration can be explained by a dynamical molecular rearrangement process that reduces total electronic energy by maintaining Fermi level pinning in the device substrate. Molecular surface concentration in this case is fully determined by the device back-gate voltage, its geometric capacitance, and the energy difference between the graphene Dirac point and the molecular LUMO level.

cond-mat.mes-hall