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Alex Zunger

Publications and source records attributed to Alex Zunger.

At least 55 records · Page 3Linked to original sources

Disorder-Induced Weyl Semimetal Phase and Sequential Band Inversions in PbSe-SnSe Alloys

The search for topological systems has recently broadened to include random substitutional alloys, which lack the specific crystalline symmetries that protect topological phases, raising the question whether topological properties can be preserved, or are modified by disorder. To address this question, we avoid methods that assumed at the outset high (averaged) symmetry, using instead a fully-atomistic, topological description of alloy. Application to PbSe-SnSe alloy reveals that topology survives in an interesting fashion: (a) spatial randomness removes the valley degeneracy (splitting larger than 150 meV), leading to a sequential inversion of the split valley components over a range of compositions; (b) absence of inversion lifts spin degenerates, leading to a Weyl semimetal phase without the need of external magnetic field, an unexpected result, given that the alloy constituent compounds are inversion-symmetric. (a) and (b) underpin the topological physics at low symmetry and complete the missing understanding of possible topological phases within the normal-topological insulator transition.

cond-mat.mtrl-sci↗

Anti-doping in Insulators and Semiconductors having Intermediate Bands with Trapped Carriers

Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were sporadically recorded in different materials without noting the mechanism: electron doping was observed to cause a portion of the lowest unoccupied band to merge into the valance band, leading to a decrease in conductivity. This behavior we dub as 'anti-doping' was seen in rare-earth nickel oxides SmNiO3, cobalt oxides SrCoO2.5, Li-ion battery materials and even MgO with metal vacancies. We describe the physical origin of anti-doping as well as its inverse problem, the 'design principles' that would enable intelligent search of materials. We find that electron anti-doping is expected in materials having pre-existing trapped holes and is caused by annihilation of such 'hole polarons' via electron doping. This may offer an unconventional way of controlling conductivity.

cond-mat.mtrl-sci↗

Origin of band gaps in 3d perovskite oxides

With their broad range of magnetic, electronic and structural properties, transition metal perovskite oxides ABO3 have long served as a platform for testing condensed matter theories. In particular, their insulating character - found in most compounds - is often ascribed to dynamical electronic correlations through the celebrated Mott-Hubbard mechanism where gaping arises from a uniform, symmetry-preserving electron repulsion mechanism. However, structural distortions are ubiquitous in perovskites and their relevance with respect to dynamical correlations in producing this rich array of properties remains an open question. Here, we address the origin of band gap opening in the whole family of 3d perovskite oxides. We show that a single-determinant mean-field approach such as density functional theory (DFT) successfully describes the structural, magnetic and electronic properties of the whole series, at low and high temperatures. We find that insulation occurs via energy-lowering crystal symmetry reduction (octahedral rotations, Jahn-Teller and bond disproportionation effects), as well as intrinsic electronic instabilities, all lifting orbital degeneracies. Our work therefore suggests that whereas ABO3 oxides may be complicated, they are not necessarily strongly correlated. It also opens the way towards systematic investigations of doping and defect physics in perovskites, essential for the full realization of oxide-based electronics.

cond-mat.mtrl-sci↗

Spontaneous non-stoichiometry and ordering of metal vacancies in degenerate insulators

We point to a class of materials representing an exception to the Daltonian view that compounds maintain integer stoichiometry at low temperatures, because forming stoichiometry-violating defects cost energy. We show that carriers in the conduction band (CB) of degenerate insulators in Ca-Al-O, Ag-Al-O, or Ba-Nb-O systems can cause a self-regulating instability, whereby cation vacancies form exothermically because a fraction of the free carriers in the CB decay into the hole states formed by such vacancies, and this negative electron-hole recombination energy offsets the positive energy associated with vacancy bond breaking. This Fermi level-induced spontaneous non-stoichiometry can lead to the formation of crystallographically ordered vacancy compounds (OVCs), explaining the previously peculiar occurrence of unusual atomic sequences such as BalNbmOn with l:m:n ratios of 1:2:6, 3:5:15, or 9:10:30. This work has general ramifications as the degenerate insulators have found growing interests in many fields ranging from transparent conductors to electrides that are electron donating promotors for catalyst.

cond-mat.mtrl-sci↗

Formation and composition-dependent properties of alloys of cubic halide perovskites

Distinct shortcomings of individual halide perovskites for solar applications, such as restricted range of band gaps, propensity of ABX3 to decompose into AX+BX2, or oxidation of 2ABX3 into A2BX6 have led to the need to consider alloys of individual perovskites. This creates a non-trivial material-selection problem, spanning a continuum of three sets of compositions (one for each sub lattice), and requiring control of phase-separation or ordering in each alloyed subfield. Not surprisingly, material and structure choices were made thus far mostly via trial-and-error explorations. We use ideas from solid state theory of semiconductor alloys to analyze the behaviors of the (FA,Cs)(Pb,Sn)I3 alloys system. Density functional calculations utilizing specially constructed supercells (SQS) are used to calculate the composition dependence of band gaps, energy of decomposition and alloy mixing enthalpies. A number of trends are observed for A-site as well as for B-site alloys. To understand the physical reasons that control these trends we decompose the alloy properties into distinct physical terms: (i) the energies associated with removing the octahedral deformations (tilting, rotations, B site displacements), (ii) the energies of compressing the larger component and expanding the smaller one to the alloy volume, (iii) the charge transfer energies associated with placing the alloyed units onto a common lattice, and finally, (iv) structural relaxation of all bonds within the cells., This analysis clarifies the origin of the observed trends in bang gaps, decomposition energies and mixing enthalpies. Unlike a number of previous calculations we find that the a proper description of alloy physics requires that even the pure, non-alloyed end-point compounds be allowed to develop local environment dependent octahedral deformation that lowers significantly the total energy and raises their band gaps.

cond-mat.mtrl-sci↗

Uncovering and tailoring hidden Rashba spin-orbit splitting in centrosymmetric crystals

Hidden Rashba and Dresselhaus spin-splittings in centrosymmetric crystals with subunits (sectors) having non-centrosymmetric symmetries (the R-2 and D-2 effects) have been predicted and observed experimentally, but the microscopic mechanism remains unclear. Here we demonstrate that the spin-splitting in R-2 is enforced by specific symmetries (such as the non-symmorphic in the present example) which ensures that the pertinent spin wavefunctions segregate spatially on just one of the two inversion-partner sectors and thus avoid compensation. This finding establishes a common fundamental source for the conventional Rashba (R-1) effect and the R-2 effect, both originating from the local sector symmetries, rather than from the global crystal asymmetry alone for R-1 per se. We further show that the effective Hamiltonian for the R-1 effect is also applicable for the R-2 effect, but applying a symmetry-breaking electric field to an R-2 compound produces different spin-splitting pattern than applying a field to a trivial (non-R-2) centrosymmetric compound.

cond-mat.mtrl-sci↗

Bond disproportionation, charge self-regulation and ligand holes in s-p and in d electron ABX3 perovskites by density functional theory

Some ABX3 perovskites exhibit different local environments (DLE) for the same B atoms in the lattice, an effect referred to as disproportionation, distinguishing such compounds from perovskites that have single local environments (SLE). The basic phenomenology of disproportionation involves the absence of B-atom charge ordering, the creation of different B-X bond length for different local environments, the appearance of metal (in SLE) to insulator (in DLE) transition, and the formation of ligand holes. We point out that this phenomenology is common to a broad range of chemical bonding patterns in ABX3 compounds, either with s-p electron B-metal cations (BaBiO3, CsTlF3), or noble metal cation (CsAuCl3), as well as d-electron cations (SmNiO3, CaFeO3). We show that underlying much of this phenomenology is the self-regulating response, whereby in strongly bonded metal-ligand systems with high lying ligand orbitals, the system protects itself from creating highly charged cations by transferring ligand electrons to the metal, thus preserving a nearly constant metal charge in DLE, while creating B-ligand bond alternation and ligand-like conduction band (ligand hole). We are asking what are the minimal theory ingredients needed to explain the main features of this SLE-to-DLE phenomenology, such as its energetic driving force, bond length changes, possible modifications in charge density and density of state changes. Using as a guide the lowering of the total energy in DLE relative to SLE, we show that density functional calculations describe this phenomenology across the whole chemical bonding range without resort to special strong correlation effects, beyond what DFT naturally contains. In particular, lower total energy configurations (DLE) naturally develop bond alternation, gaping of the metallic SLE state, and absence of charge ordering with ligand hole formation.

cond-mat.mtrl-sci↗

Topological insulators vs. topological Dirac semimetals in honeycomb compounds

Intriguing physical property of materials stems from their chemical constituent whereas the connection between them is often not clear. Here, we uncover a general chemical classification for the two quantum phases in the honeycomb ABX structure--topological insulator (TI) and topological Dirac semimetal (TDSM). First, we find among the 816 (existing as well as hypothetical) calculated compounds, 160 TI's (none were noted before), 96 TDSM's, 282 normal insulators (NI's), and 278 metals. Second, based on this classification, we have distilled a simple chemical regularity based on compound formulae for the selectivity between TI and TDSM: The ABX compounds that are TDSM have B atoms (part of the BX honeycomb layers) that come from the Periodic Table columns XI (Cu, Ag, Au) or XII (Zn, Cd, Hg), or Mg (group II), whereas the ABX compounds whose B atoms come from columns I (Li, Na, K, Rb, Cs) or II (Ca, Sr, Ba) are TI's. Third, focusing on the ABX Bismide compounds that are thermodynamically stable, we find a structural motif that delivers topological insulation and stability at the same time. This study opens the way to simultaneously design new topological materials based on the compositional rules indicated here.

cond-mat.mtrl-sci↗

Electron doping of proposed quantum spin liquid kagomé Zn-Cu hydroxyl-halides produces localized states in the band gap

Carrier doping of quantum spin liquids is a long-proposed route to the emergence of high-temperature superconductivity. Electrochemical intercalation in kagome hydroxyl-halide materials shows that samples remain insulating across a wide range of electron counts. Here we demonstrate through first-principles density functional calculations corrected for self-interaction the mechanism by which electrons remain localized in various Zn-Cu hydroxyl-halides, independently of the chemical identity of the dopant - the formation of polaronic states with attendant lattice displacements and a dramatic narrowing of bandwidth upon electron addition. The same theoretical method applied to electron doping in cuprate Nd2CuO4 correctly produces a metallic state when the initially formed polaron dissolves into an extended state. Our general findings explain the insulating behavior in a wide range of doped quantum magnets and demonstrate that new quantum spin liquid host materials are needed to realize metallicity borne of a spin liquid.

cond-mat.mtrl-sci↗

A polymorphous band structure model of gapping in the anti-ferromagnetic and paramagnetic phases of the Mott insulators MnO, FeO, CoO, and NiO

A band structure description of the observed large band gaps and moments in both the antiferromagnetic (AFM) and paramagnetic (PM) phases of the classic NaCl-structure Mott insulators MnO, FeO, CoO, and NiO is provided by ordinary, single-determinant density functional theory method. As noted by previous authors, the ordered AFM phases already show in band theory significant band gaps. However, for the disordered PM phases the commonly used band model has been to assume the macroscopically observed, averaged NaCl structure, where all transition metal sites are forced to be symmetry-equivalent (a monomorphous description); for the PM phase this forces zero moment on an atom by atom basis, thus producing a gapless PM state, in sharp conflict with experiment. Instead, we allow larger NaCl-type supercells where each TM site can have different local bonding and spin environments (a polymorphous description) and thus the geometric flexibility to acquire symmetry-lowering distortions that lower the total energy and can break the symmetry of the d orbitals. The existence of a distribution of different local spin and bonding environments allows large on-site magnetic moments to develop spontaneously in the DFT+U calculations leading to significant (1-3 eV) band gaps in the AFM, FM, and PM phases of the classic Mott insulators MnO, FeO, CoO, and NiO. We adapt to the spin disordered configurations in the PM phases the "special quasi-random structure" whereby supercell approximants which represent the best random configuration average for finite supercells of a given lattice symmetry are constructed. Thus, avoiding a monomorphous description of the disordered magnetic phases allows even ordinary DFT+U, which represents the N electron system with a single-determinant wavefunction, to describe the gapping not only in the AFM phases but also in the PM phases of MnO, FeO, CoO, and NiO.

cond-mat.mtrl-sci↗

Changes in charge density vs changes in formal oxidation states: The case of Sn halide perovskites and their ordered vacancy analogues

Shifting the Fermi energy in solids by doping, defect formation or gating generally results in changes in the charge density distribution, which reflect the ability of the bonding pattern in solids to adjust to such external perturbations. In the ionic limit, such changes are described by the formal oxidation states (FOS) whereby a single atom type is presumed to absorb the full burden of the perturbation (change in charge) of the whole compound. In this picture, when the solar absorber CsSnI3 loses 50 % of its Sn atoms thereby forming the ordered vacancy compound Cs2SnI6, the Sn is said to change from Sn2+ to Sn4+. In reality, the charge redistribution is more complex. To understand the electronic properties of these two groups and to gauge the trends in s-electron charge on the nucleus, we studied the 113/216 compound pairs CsSnCl3/Cs2SnCl6; CsSnBr3/Cs2SnBr6, and CsSnI3/Cs2SnI6. We have calculated the electronic structure of these three compound pairs, complementing them by CsSnF3/Cs2SnF6 in the hypothetical cubic structure for completing the chemical trends. These materials were also synthesized by chemical routes and characterized by X-ray diffraction, Mossbauer spectroscopy and K-edge X-ray Absorption Spectroscopy. We find that in going from 113 to 216 there is a decrease in the s charge on Sn, in agreement with the FOS picture. However, at the same time, we observe an increase of the p charge via downshift of the otherwise unoccupied p level, an effect that tends to replenish much of the lost s charge. This effect is theoretically explained as a self-regulating response [H. Raebiger, S. Lany, and A. Zunger, Nature 453, 763 (2008)] whereby the system re-hybridizes to minimize the effect of the charge perturbation created by vacancy formation. Our work clarifies the relation between FOS and charge transfer that can be applied to a wide variety of materials.

cond-mat.mtrl-sci↗

Cu-In Halide Perovskite solar absorbers

The long-term chemical instability and the presence of toxic Pb in otherwise stellar solar absorber APbX$_{3}$ have hindered their large-scale commercialization. Previously explored ways to achieve Pb-free halide perovskites involved replacing Pb$^{2+}$ with other similar M$^{2+}$ cations in ns$^2$ electron configuration, e.g., Sn$^{2+}$ or by Bi$^{3+}$ (plus Ag$^+$), but unfortunately this showed either poor stability (M = Sn) or weakly absorbing oversized indirect gaps (M = Bi), prompting concerns that perhaps stability and good optoelectronic properties might be contraindicated. Herein, we exploit the electronic structure underpinning of classic Cu[In,Ga]Se$_{2}$ (CIGS) chalcopyrite solar absorbers to design Pb-free halide perovskites by transmuting 2Pb to the pair [B$^{IB}$ + C$^{III}$]. The resulting group of double perovskites with formula A$_2$BCX$_6$ (A = K, Rb, Cs; B = Cu, Ag; C = Ga, In; X = Cl, Br, I) benefits from the ionic, yet narrow-gap character of halide perovskites, and at the same time borrows the advantage of the strong and rapidly rising Cu(d)/Se(p) $\rightarrow$ Ga/In(s/p) valence-to-conduction-band absorption spectra known from CIGS. This constitutes a new group of CuIn-based Halide Perovskite (CIHP). Our first-principles calculations guided by such design principles indicate that the CIHPs class has members with clear thermodynamic stability, showing rather strong direct-gap optical transitions, and manifesting a wide-range of tunable gap values (from zero to about 2.5 eV) and combination of light electron and heavy-light hole effective masses. Materials screening of candidate CHIPs then identifies the best-of-class Rb$_2$[CuIn]Cl$_6$, Rb$_2$[AgIn]Br$_6$ and Cs$_2$[AgIn]Br$_6$, having direct band gaps of 1.36, 1.46 and 1.50 eV, and a theoretical spectroscopic limited maximal efficiency comparable to chalcopyrites and CH$_3$NH$_3$PbI$_3$.

cond-mat.mtrl-sci↗

Predicted Realization of Cubic Dirac Fermion in Quasi-One-Dimensional Transition-Metal MonoChalcogenides

We show that the previously predicted Fermion particle that has no analogue in the standard model of particle theory - the cubically dispersed Dirac semimetal (CDSM) - is realized in a specific, stable solid state system that has been made years ago, but was not appreciated to host such a unique Fermion, composed of six Weyl Fermions, 3 with left-handed and 3 with right-handed chirality. We identified the crystal symmetry constraints and found the space group P63/m as one of the two that can support a CDSM, of which the characteristic band crossing has linear dispersion along the principle axis but cubic dispersion in the plane perpendicular to it. We then conducted a material search using density functional theory identifying a group of quasi-one-dimensional molybdenum mono-chalcogenide compounds A(MoX)3 (A = Na, K, Rb, In, Tl, X = S, Se, Te) as ideal CDSM candidates. Studying the stability of the A(MoX)3 family reveals a few candidates such as Rb(MoTe)3 and Tl(MoTe)3 that are predicted to be resilient to Peierls distortion, thus retaining the metallic character. The combination of one-dimensionality and metallic nature in this family provides a platform for unusual optical signature - polarization dependent metallic vs insulating response.

cond-mat.mtrl-sci↗

The enabling electronic motif for topological insulation in ABO3 perovskites and its structural stability

Stable oxide topological insulators (TIs) that could bring together the traditional oxide functionalities with the dissipationless surface states of TIs have been sought for years but none was found. Yet, heavier chalcogenides (selenides, tellurides) were readily found to be TIs. We clarify here the basic contradiction between TI-ness and stability which is maximal for oxides, and trace the basic design principles necessary to identify the window of opportunity of stable TIs. We first identify the electronic motif that can achieve topological band inversion ("topological gene") in ABO3 as being a lone-pair electron-rich B atom (e.g. Te, I, Bi) at the octahedral site. We then illustrate that poorly screened oxide systems with large inversion energies can undergo energy-lowering atomic distortions that remove the band inversion. We identify the coexistence windows of TI functionality and structure stability for different pressures and find that the common cubic ABO3 structures have inversion energies lying outside this coexistence window at zero pressure but could be moved into the coexistence window at moderate pressures. Our study demonstrates the interplay between topological band inversion and structural stability and traces the basic principles needed to design stable oxide topological insulators at ambient pressures.

cond-mat.mtrl-sci↗

Predicted electronic markers for polytypes of LaOBiS2 examined via angular resolved photoemission spectroscopy

The natural periodic stacking of symmetry-inequivalent planes in layered compounds can lead to the formation of natural superlattices; albeit close in total energy, (thus in their thermodynamic stability), such polytype superlattices can exhibit different structural symmetries, thus have markedly different electronic properties which can in turn be used as "structural markers". We illustrate this general principle on the layered LaOBiS2 compound where density-functional theory (DFT) calculations on the (BiS2)/(LaO)/(BiS2) polytype superlattices reveal both qualitatively and quantitatively distinct electronic structure markers associated with the Rashba physics, yet the total energies are only ~ 0.1 meV apart. This opens the exciting possibility of identifying subtle structural features via electronic markers. We show that the pattern of removal of band degeneracies in different polytypes by the different forms of symmetry breaking leads to new Rashba "mini gaps" with characteristic Rashba parameters that can be determined from spectroscopy, thereby narrowing down the physically possible polytypes. By identifying these distinct DFT-predicted fingerprints via ARPES measurements on LaBiOS2 we found the dominant polytype with small amounts of mixtures of other polytypes. This conclusion, consistent with neutron scattering results, establishes ARPES detection of theoretically established electronic markers as a powerful tool to delineate energetically quasidegenerate polytypes.

cond-mat.mtrl-sci↗

Functionality-directed Screening of Pb-free Hybrid Organic-inorganic Perovskites with Desired Intrinsic Photovoltaic Functionalities

The material class of hybrid organic-inorganic perovskites has risen rapidly from a virtually unknown material in photovoltaic applications a short 7 years ago into a ~20% efficient thin-film solar cell material. As promising as this class of materials is, however, there are limitations associated with its poor long-term stability, non-optimal band gap, presence of environmentally-toxic Pb element, etc. We herein apply a functionality-directed theoretical materials selection approach as a filter for initial screening of the compounds that satisfy the desired intrinsic photovoltaic functionalities and might overcome the above limitations. First-principles calculations are employed to systemically study thermodynamic stability and photovoltaic-related properties of hundred of candidate hybrid perovskites. We have identified in this materials selection process fourteen Ge and Sn-based materials with potential superior bulk-material-intrinsic photovoltaic performance. A distinct class of compounds containing NH3COH$^+$ with the organic molecule derived states intriguingly emerging at band-edges is found. Comparison of various candidate materials offers insights on how composition variation and microscopic structural changes affect key photovoltaic relevant properties in this family of materials.

cond-mat.mtrl-sci↗

Minimal Ingredients for Orbital Texture Switches at Dirac Points in Strong Spin-Orbit Coupled Materials

Recent angle resolved photoemission spectroscopy measurements on strong spin-orbit coupled materials have shown an in-plane orbital texture switch at their respective Dirac points, regardless of whether they are topological insulators or "trivial" Rashba materials. This feature has also been demonstrated in a few materials ($\text{Bi}_2\text{Se}_3$, $\text{Bi}_2\text{Te}_3$, and $\text{BiTeI}$) though DFT calculations. Here we present a minimal orbital-derived tight binding model to calculate the electron wave-function in a two-dimensional crystal lattice. We show that the orbital components of the wave-function demonstrate an orbital-texture switch in addition to the usual spin switch seen in spin polarized bands. This orbital texture switch is determined by the existence of three main properties: local or global inversion symmetry breaking, strong spin-orbit coupling, and non-local physics (the electrons are on a lattice). Using our model we demonstrate that the orbital texture switch is ubiquitous and to be expected in many real systems. The orbital hybridization of the bands is the key aspect for understanding the unique wave function properties of these materials, and this minimal model helps to establish the quantum perturbations that drive these hybridizations.

cond-mat.mtrl-sci↗

Orbital mapping of energy bands and the truncated spin polarization in three-dimensional Rashba semiconductors

Associated with spin-orbit coupling (SOC) and inversion symmetry breaking, Rashba spin polarization opens a new avenue for spintronic applications that was previously limited to ordinary magnets. However, spin polarization effects in actual Rashba systems are far more complicated than what conventional single-orbital models would suggest. By studying via first-principles DFT and a multi-orbital k.p model a 3D bulk Rashba system (free of complications by surface effects) we find that the physical origin of the leading spin polarization effects is SOC-induced hybridization between spin and multiple orbitals, especially those with nonzero orbital angular momenta. In this framework we establish a general understanding of the orbital mapping, common to the surface of topological insulators and Rashba system. Consequently, the intrinsic mechanism of various spin polarization effects, which pertain to all Rashba systems even those with global inversion symmetry, is understood as a manifestation of the orbital textures. This finding suggests a route for designing high spin-polarization materials by considering the atomic-orbital content.

physics.comp-ph↗