arXiv subjects

Alexander Brinkman

Publications and source records attributed to Alexander Brinkman.

At least 19 recordsLinked to original sources

arXiv2026

Gate-tunable anisotropic Josephson diode effect in topological Dirac semimetal Cd$_3$As$_2$ nanowires

The intrinsic Josephson diode effect (JDE) has recently attracted considerable attention due to its sensitivity to broken symmetries in Josephson junctions, offering a powerful probe for uncovering hidden symmetry-breaking mechanisms in materials. The presence of higher-harmonic components in the current-phase relation, together with spin-orbital coupling, makes topological materials ideal platforms to explore this effect. In this work, we present a systematic study of the JDE in type-I topological Dirac semimetal Cd$_3$As$_2$ nanowire-based Josephson junctions. We observe a pronounced gate-tunable and highly anisotropic diode response under different magnetic-field orientations. By developing a comprehensive phenomenological model, we capture the angular dependence of the diode effect and, through temperature-dependent measurements, disentangle the respective contributions from bulk and topological surface states. Notably, anomalies in the temperature dependence of the diode efficiency reveal the coexistence of multiple transport channels, highlighting the Josephson diode effect as a sensitive probe of hidden topological superconducting states.

cond-mat.mes-hall↗

arXiv2025

Observation of the surface hybridization gap in the electrical transport properties of the ultrathin topological insulator (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$

We study the three-dimensional topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ in its ultrathin limit i.e. when the thickness is of the same order as the surface state penetration depth. It is expected that in this limit a hybridization gap opens at the Dirac point, which gives rise to a quantum spin Hall (QSH) or insulating phase, depending on the material thickness. We fabricate (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Hall bars with a thicknesses of 6 and 9 nm and measure an insulating phase around the Dirac point for low bias and at sub-Kelvin temperatures only in samples fabricated from the 6 nm films, which indicates the presence of a hybridization gap. The effect of a perpendicular magnetic field on the hybridization gap is studied but remains partially unresolved. The results form an important step towards experimentally realizing the quantum spin Hall state via hybridization in ultrathin films of (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$, yet, they also expose a knowledge gap regarding transport measurements in these systems.

cond-mat.mes-hall↗

arXiv2025

Signature of current-induced nuclear spin polarization in (Bi$_{1-x}$Sb$_{x}$)$_2$Te$_3$

In systems with spin-momentum locking, such as the surface states of three-dimensional topological insulators, a charge current is spin-polarized and spin-flip interactions between electron and nuclear spins can transfer this polarization to the nuclear spin system. When a nonzero bias voltage is applied, the nuclear polarization reaches a steady-state value. This polarization emerges as an effective in-plane magnetic field acting on electrons, called the Overhauser field, which causes an offset in-plane magnetoresistance perpendicular to the current, visible in experiments. The in-plane offset is measured in the three-dimensional topological insulator \bsttight, and the magnitude of the magnetic field offset is compared to the Overhauser field. We attribute the observed magnetic field offset to current-induced nuclear polarization in \bsttight, which forms an important step towards experimentally realizing an entropic inductor.

cond-mat.mes-hall↗

arXiv2025

Non-Ohmic behavior in (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ by Joule heating

A prerequisite to using the net spin polarization generated by a source-drain bias in three-dimensional topological insulators for spintronic applications, is understanding how such a bias alters the transport properties of these materials. At low temperatures, quantum corrections can dominate the temperature dependence of the resistance. Although a DC bias does not break time-reversal symmetry and is therefore not expected to suppress quantum corrections, an increase of the electron temperature due to Joule heating can cause a suppression. This suppression at finite bias can lead to a non-Ohmic differential resistance in the three-dimensional topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$, consisting of a zero-bias resistance peak (from electron-electron interactions) and a high-bias background (from weak antilocalization). We show that the bias voltage dependence of quantum corrections can be mapped to the temperature dependence, while the heating effect on the lattice temperature remains small. When searching for non-Ohmic effects due to novel phenomena in three-dimensional topological insulators, Joule heating should not be overlooked.

cond-mat.mes-hall↗

arXiv2025

Manipulating the topological spin of Majoranas

The non-Abelian exchange statistics of Majorana zero modes make them interesting for both technological applications and fundamental research. Unlike their non-Abelian counterpart, the Abelian contribution, $e^{i\theta}$, where $\theta$ is directly related to the Majorana's topological spin, is often neglected. However, the Abelian exchange phase and hence the topological spin can differ from system to system. For vortices in topological superconductors, the Abelian exchange phase is interpreted as an Aharonov-Casher phase arising from a vortex encircling a $e/4$ charge. In this work, we show how this fractional charge, and hence the topological spin, can be manipulated through the control of device geometry, introducing an additional control knob for topological quantum computing. To probe this effect, we propose a vortex interference experiment that reveals the presence of this fractional charge through shifts in the critical current.

cond-mat.mes-hall↗

arXiv2025

Coexisting topological hinges and 1D Rashba states in Bi$_{0.97}$Sb$_{0.03}$ revealed by the Josephson effect

Second-order topological insulating (SOTI) states in three-dimensional materials are helical one-dimensional hinge states. Inducing superconductivity in these states leads to gapless bound states, characterized by the 4$\pi$-periodic current-phase relation. Here, we provide evidence of the topologically protected hinge states in Dirac semimetal Bi$_{0.97}$Sb$_{0.03}$ nanoflakes by an unconventional interference pattern in a magnetic field, and the 4$\pi$-periodic supercurrent carried by these states via the suppressed first and third Shapiro steps. Tight-binding simulations confirm the presence of multiple hinge modes, supporting our interpretation of Bi$_{0.97}$Sb$_{0.03}$ as a prototypical designable SOTI platform. Quantum confinement effect is identified by a quasi-one-dimensional bulk transport, and the confined Rashba states are responsible for the broadened hinge states.

cond-mat.mes-hall↗

arXiv2025

Quantum transport in SnTe nanowire devices

We report on a variety of quantum transport experiments in SnTe nanowire devices. Research on these particular nanowire devices is relevant because of their topological properties and their potential to distinguish surface states owing to their high surface-to-volume ratio that suppresses the bulk contribution to the conductance. We observe a low-resistance and a high-resistance regime. The highly resistive devices display semiconducting and quantum dot behavior caused by microscopic differences in the fabrication, while devices with low resistance show partial superconductivity when in a hybrid superconductor-nanowire configuration or Fabry-P\'erot oscillations. The latter suggests quantum interference in a ballistic transport channel, attributed to the 2D surface states in SnTe. The wide variety of quantum transport phenomena demonstrate SnTe nanowires as a promising platform for diverse follow-up experiments and novel device architectures, including the exploration of topological superconductivity and the development of low-energy spintronic devices.

cond-mat.mes-hall↗

arXiv2025

Gate electrode-induced nonreciprocal resistance in topological insulators

A common method of controlling the chemical potential in topological insulators is applying a gate electrode. Simultaneously applying high source-drain bias currents can lead to parasitic effects in such devices. We derive that these parasitic effects lead to a gradient in the Hall effect along the current lead of a Hall bar. Consequently, nonreciprocal effects in both longitudinal and Hall voltages appear upon reversing the bias. These effects scale similarly to the magnetochiral anisotropy, requiring detailed analysis to make a distinction. Experimentally we show that nonreciprocal effects can appear in materials where magnetochiral anisotropy is not expected while a top gate is present. Without gate electrode, this nonreciprocal effect is found to be absent. These results show the importance of considering and, if possible, excluding gate electrode-induced effects when searching for nonreciprocal resistance intrinsic to a material.

cond-mat.mes-hall↗

arXiv2025

From surface Fermi arcs to Fermi loops in the Dirac semimetal Cd3As2

Arc-like topological surface states, i.e., surface Fermi arcs, have long been recognized as the hallmark of Dirac semimetals. However, recent theories suggest that the surface Fermi arcs could evolve into closed Fermi loops, akin to surface states in topological insulators, while preserving the bulk Dirac semimetal phase. Here we experimentally reveal the evolution of Fermi arcs to Fermi loops in the surface-modified Dirac semimetal Cd3As2 nanoplate through gate voltage-dependent spin transport and quantum oscillation measurements. Surface modification, achieved by heavy metal atom deposition and water molecule adsorption, leads to an increase in the current-induced spin polarization at higher gate voltages, contrasting with the decrease observed in the pristine nanoplate. We also observe surface Shubnikov-de Haas oscillations with frequencies that scale linearly with gate voltage, aligning with a Fermi loop scenario. These findings indicate a transition from Fermi arcs to a closed Fermi loop in the surface-modified Cd3As2 nanoplate, consistent with the theoretically predicted fragile topological nature of Cd3As2. Our research offers profound insights into the transitions among these subtle topological states in Dirac semimetals, paving the way for manipulating topological surface states for high-performance spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Entropy Driven Inductive Response of Topological Insulators

3D topological insulators are characterized by an insulating bulk and extended surface states exhibiting a helical spin texture. In this work, we investigate the hyperfine interaction between the spin-charge coupled transport of electrons and the nuclear spins in these surface states. Previous work has predicted that in the quantum spin Hall insulator phase, work can be extracted from a bath of polarized nuclear spins as a resource. We employ nonequilibrium Green's function analysis to show that a similar effect exists on the surface of a 3D topological insulator, albeit rescaled by the ratio between electronic mean free path and device length. The induced current due to thermal relaxation of polarized nuclear spins has an inductive nature. We emphasize the inductive response by rewriting the current-voltage relation in harmonic response as a lumped element model containing two parallel resistors and an inductor. In a low-frequency analysis, a universal inductance value emerges that is only dependent on the device's aspect ratio. This scaling offers a means of miniaturizing inductive circuit elements. An efficiency estimate follows from comparing the spin-flip induced current to the Ohmic contribution. The inductive effect is most prominent in topological insulators which have a large number of spinful nuclei per coherent segment, of which the volume is given by the mean free path length, Fermi wavelength and penetration depth of the surface state.

cond-mat.mes-hall↗

arXiv2023

Topological information device operating at the Landauer limit

We propose and theoretically investigate a novel Maxwell's demon implementation based on the spin-momentum locking property of topological matter. We use nuclear spins as a memory resource which provides the advantage of scalability. We show that this topological information device can ideally operate at the Landauer limit; the heat dissipation required to erase one bit of information stored in the demon's memory approaches $k_B T\ln2$. Furthermore, we demonstrate that all available energy, $k_B T\ln2$ per one bit of information, can be extracted in the form of electrical work. Finally, we find that the current-voltage characteristics of topological information device satisfy the conditions of an ideal memristor.

cond-mat.mes-hall↗

arXiv2023

Multiple Andreev reflections in two-dimensional Josephson junctions with broken time-reversal symmetry

Andreev bound states (ABS) occur in Josephson junctions when the total phase of the Andreev and normal reflections is a multiple of $2π$. In ballistic junctions with an applied voltage bias, a quasi-particle undergoes multiple Andreev reflections before entering the leads, resulting in peaks in the current-voltage $I(V)$ curve. Here we present a general model for Josephson junctions with spin-active interlayers i.e., magnetic or topological materials with broken time-reversal symmetry. We investigate how ABS change the peak positions and shape of $I(V)$, which becomes asymmetric for a single incident angle. We show how the angle-resolved $I(V)$ curve becomes a spectroscopic tool for the chirality and degeneracy of ABS.

cond-mat.supr-con↗

arXiv2021

Thickness-Dependent Band Gap Modification in BaBiO$_{3}$

The material BaBiO$_{3}$ is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because BaBiO$_{3}$ is suggested to return to its undistorted cubic phase where the oxygen octahedra breathing mode will be suppresse as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO$_{3}$ thickness series are studied using \textit{in-situ} scanning tunneling microscopy. We observe a wide-gap ($E_\textrm{G}$~$>$ 1.2 V) to small-gap~($E_\textrm{G}$~$\approx$ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO$_{3}$ film thickness. However, even for an ultra-thin BaBiO$_{3}$ film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.

cond-mat.str-el↗

arXiv2021

Rover Relocalization for Mars Sample Return by Virtual Template Synthesis and Matching

We consider the problem of rover relocalization in the context of the notional Mars Sample Return campaign. In this campaign, a rover (R1) needs to be capable of autonomously navigating and localizing itself within an area of approximately 50 x 50 m using reference images collected years earlier by another rover (R0). We propose a visual localizer that exhibits robustness to the relatively barren terrain that we expect to find in relevant areas, and to large lighting and viewpoint differences between R0 and R1. The localizer synthesizes partial renderings of a mesh built from reference R0 images and matches those to R1 images. We evaluate our method on a dataset totaling 2160 images covering the range of expected environmental conditions (terrain, lighting, approach angle). Experimental results show the effectiveness of our approach. This work informs the Mars Sample Return campaign on the choice of a site where Perseverance (R0) will place a set of sample tubes for future retrieval by another rover (R1).

cs.RO↗

arXiv2020

Artificial oxide heterostructures with non-trivial topology

In the quest for topological insulators with large band gaps, heterostructures with Rashba spin-orbit interactions come into play. Transition metal oxides with heavy ions are especially interesting in this respect. We discuss the design principles for stacking oxide Rashba layers. Assuming a single layer with a two-dimensional electron gas (2DEG) on both interfaces as a building block, a two-dimensional topological insulating phase is present when negative coupling between the 2DEGs exists. When stacking multiple building blocks, a two-dimensional or three-dimensional topological insulator is artificially created, depending on the intra- and interlayer coupling strengths and the number of building blocks. We show that the three-dimensional topological insulator is protected by reflection symmetry, and can therefore be classified as a topological crystalline insulator. In order to isolate the topological states from bulk states, the intralayer coupling term needs to be quadratic in momentum. It is described how such a quadratic coupling could potentially be realized by taking buckling within the layers into account. The buckling, thereby, brings the idea of stacked Rashba system very close to the alternative approach of realizing the buckled honeycomb lattice in [111]-oriented perovskite oxides.

cond-mat.mes-hall↗

arXiv2020

Reducing electronic transport dimension to topological hinge states by increasing geometry size of Dirac semimetal Josephson junctions

The notion of topological phases has been extended to higher-order and has been generalized to different dimensions. As a paradigm, Cd3As2 is predicted to be a higher-order topological semimetal, possessing three-dimensional (3D) bulk Dirac fermions, two-dimensional (2D) Fermi arcs, and one-dimensional (1D) hinge states. These topological states have different characteristic length scales in electronic transport, allowing to distinguish their properties when changing sample size. Here, we report an anomalous dimensional reduction of supercurrent transport by increasing the size of Dirac semimetal Cd3As2-based Josephson junctions. An evolution of the supercurrent quantum interferences from a standard Fraunhofer pattern to a superconducting quantum interference device (SQUID)-like one is observed when the junction channel length is increased. The SQUID-like interference pattern indicates the supercurrent flowing through the 1D hinges. The identification of 1D hinge states should be valuable for deeper understanding the higher-order topological phase in a 3D Dirac semimetal.

cond-mat.mtrl-sci↗

arXiv2019

Josephson Effect and Charge Distribution in Thin Bi$_2$Te$_3$ Topological Insulators

Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, we study the Josephson effect, magnetotransport, and weak anti-localization in bottom-gated thin Bi$_2$Te$_3$ topological insulator films.We compare the experimental carrier densities to a model based on the solutions of the self-consistent Schrödinger-Poisson equations and find excellent agreement. The modeling allows for a quantitative interpretation of the weak antilocalization correction to the conduction and of the critical current of Josephson junctions with weak links made from such films without any ad hoc assumptions.

cond-mat.mtrl-sci↗

arXiv2019

Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires

We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at $180$ $^\circ$C during which aluminium inter-diffuses and replaces the germanium in a section of the nanowire. Next to Al, we find a superconductor with lower critical temperature ($T_\mathrm{C}=0.9$ K) and a higher critical field ($B_\mathrm{C}=0.9-1.2$ T). We can therefore selectively switch either superconductor to the normal state by tuning the temperature and the magnetic field and observe that the additional superconductor induces a proximity supercurrent in the semiconducting part of the nanowire even when the Al is in the normal state. In another device where the diffusion of Al rendered the nanowire completely metallic, a superconductor with a much higher critical temperature ($T_\mathrm{C}=2.9$ K) and critical field ($B_\mathrm{C}=3.4$ T) is found. The small size of diffusion-induced superconductors inside nanowires may be of special interest for applications requiring high magnetic fields in arbitrary direction.

cond-mat.mes-hall↗