arXiv subjects

Alexander J Healey

Publications and source records attributed to Alexander J Healey.

5 recordsLinked to original sources

arXiv2026

Persistence and emergence of quantum defects through pressure-induced phase changes

Extreme pressures can transform materials and their properties, but probing these in-situ is made challenging by the small sample volumes and access requirements demanded by diamond anvil cells. Quantum defects offer a route to local measurements under such conditions, yet their sensing performance can be dictated by pressure-induced changes in their own host material. On the other hand, pressure may also be harnessed as a tool to engineer and stabilize new quantum defects with emergent functionalities. Here, we demonstrate both aspects within a unified platform based on optically active spin-pair defects in hexagonal boron nitride (hBN). As robust quantum sensors under pressure, these spin-1/2 systems retain pressure-independent spin resonances up to 20 GPa while maintaining or even enhancing their optical emission, in stark contrast to the spin-1 boron-vacancy centre in the same material. Simultaneously, we show that compression acts as a means of quantum defect engineering: the starting hBN undergoes an irreversible transformation into wurtzite boron nitride (wBN), during which the defect landscape is reconfigured. Spin-pair sensors are seen to persist across this structural transition, however, depending on the starting material we also observe new, highly fluorescent defects in the wBN phase. These results establish spin-pair defects in boron nitride as pressure-resilient quantum sensors while highlighting high pressure itself as a versatile pathway for creating and tuning quantum emitters.

cond-mat.mes-hall↗

arXiv2026

Omnidirectional magnetic imaging of magnetic anisotropy and phase transitions

Micron scale imaging of magnetic fields is an important tool for understanding the evolution of magnetism through phase transitions and as a result of interactions inside of heterostructures. However, most imaging platforms, like the nitrogen-vacancy (NV) centre in diamond, are restricted to applying magnetic fields along the quantisation axis of the quantum sensor. This greatly restricts the utility of these systems for exploring materials that emit strong fields or exhibit variable response with respect to the applied field direction. Here we explore an alternative approach using weakly coupled spin-pairs in hBN that exhibit a spin-1/2-like behaviour and an isotropic response to magnetic field. We demonstrate that the spin-pair system can operate in the presence of strong fields from a thin film magnet which were incompatible with NV diamond imaging even with applied fields along the quantisation axis. Further, we demonstrate that using this platform allows for imaging with an arbitrary applied magnetic field direction, allowing us to probe the anisotropy and spin-reorientation transition in the ferrimagnet TbMn$_6$Sn$_6$. Finally, we propose an improved geometry for imaging small anisotropy contributions such as crystalline anisotropy. These results demonstrate how this or similar spin-1/2 systems might be used for imaging magnetic materials that are incompatible with other techniques despite the reduction in sensitivity compared with NV in diamond imaging.

cond-mat.mes-hall↗

arXiv2025

Nitrogen-vacancy centre formation via local femto-second laser annealing of diamond

Emerging quantum technologies based on the nitrogen-vacancy (NV) centre in diamond require carefully engineered material with controlled defect density, optimised NV formation processes, and minimal crystal strain. The choice of NV generation technique plays a crucial role in determining the quality and performance of these centres. In this work, we investigate NV centre formation in nitrogen-doped diamond using femtosecond (fs) laser processing. We systematically examine the effect of laser pulse energy on NV production and quality using photoluminescence and optically detected magnetic resonance measurements. We also probe the role of pre-existing lattice defects formed by electron irradiation and consider defect evolution over extended dwell times. Finally, we are able to identify a regime where the main action of the fs-laser is to diffuse rather than create vacancies. This local annealing capability expands the toolkit for tailored NV production and presents opportunities for fine tuning defect populations.

cond-mat.mtrl-sci↗

arXiv2024

Imaging magnetic switching in orthogonally twisted stacks of a van der Waals antiferromagnet

Stacking van der Waals magnets holds promise for creating new hybrid materials with properties that do not exist in bulk materials. Here we investigate orthogonally twisted stacks of the van der Waals antiferromagnet CrSBr, aiming to exploit an extreme misalignment of magnetic anisotropy across the twisted interface.Using nitrogen-vacancy centre microscopy, we construct vector maps of the magnetisation, and track their evolution under an external field, in a range of twisted compensated and uncompensated configurations differing by the number of layers. We show that twisted stacking consistently modifies the local magnetic switching behaviour of constituent flakes, and that these modifications are spatially non-uniform. In the case of compensated component flakes (even number of layers), we demonstrate that the combination of dipolar coupling and stacking-induced strain can reduce the switching field by over an order of magnitude. Conversely, in uncompensated component flakes (odd number of layers), we observe indications of a non-zero interlayer exchange interaction between twisted flakes during magnetization reversal, which can persistently modify magnetic order. This work highlights the importance of spatial imaging in investigating stacking-induced magnetic effects, particularly in the case of twistronics where spatial variation is expected and can be conflated with structural imperfections.

cond-mat.mes-hall↗

arXiv2024

Optimisation of electron irradiation for creating spin ensembles in hexagonal boron nitride

Boron vacancy centre ($V_{\rm B}^-$) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for $V_{\rm B}^-$ creation, however, to date only limited attention has been given to optimising the defect production process, especially in the case of bulk irradiation with high-energy particles, which offers scalability through the potential for creating ensembles in large volumes of material. Here we systematically investigate the effect of electron irradiation by varying the dose delivered to a range of hBN samples, which differ in their purity, and search for an optimum in measurement sensitivity. We find that moderate electron irradiation doses ($\approx 5\times 10^{18}$~cm$^{-2}$) appear to offer the best sensitivity, and also observe a dependence on the initial crystal purity. These results pave the way for the scalable and cost-effective production of hBN quantum sensors, and provide insight into the mechanisms limiting $V_{\rm B}^-$ spin properties.

cond-mat.mes-hall↗