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Alexander Khaetskii

Publications and source records attributed to Alexander Khaetskii.

At least 19 recordsLinked to original sources
arXiv2026

Anisotropic magnetoresistance of 2D Rashba films with in-plane Zeeman field and short-range disorder

We study the dc conductivity of a continuum two-dimensional Rashba film with an in-plane Zeeman field and delta-correlated scalar disorder. Although the field deforms the two helicity Fermi contours and rotates the spin texture, it does not produce anisotropic magnetoresistance in the leading quasiclassical conductivity. The mechanism is geometric. A density Ward identity fixes the spin-vector part of the Born self-energy to the derivative of the total particle density with respect to the field. This derivative vanishes, because the total area enclosed by the two Rashba-Zeeman sheets is independent of the in-plane field. The Born self-energy is therefore scalar and field independent, and the quasiparticle lifetime stays isotropic. The same area invariance controls transport: once the leading impurity ladder reduces the current vertex to the parabolic velocity, the diagonal intraband Kubo conductivity collapses onto the two-sheet occupied area and is field independent as well. The result settles the short-range-disorder quasiclassical problem: point-like nonmagnetic impurities do not produce AMR in this model. A nonzero AMR requires physics beyond this quasiclassical short-range-disorder mechanism.

cond-mat.mes-hall↗
arXiv2026

Surface States in Strain-Induced Nodal-Line Topological Semiconductors

This work explores the topological phase diagram of inverted-band-gap semiconductors under strain and spin-orbit coupling. Using a minimalistic Luttinger Hamiltonian model, we follow the transitions between a 3D topological insulator, a Dirac semimetal, a nodal-line semimetal, and a Weyl semimetal. Analytical and exact solutions for surface states are derived for high-symmetry directions as well as in several limiting cases. We demonstrate the continuous evolution of these surface states across phase boundaries, providing a unified picture that synthesizes previous literature. Specifically, we detail the progression from a Dirac to a nodal-line and then to a Weyl semimetal as spin-orbit coupling originating from bulk inversion asymmetry is introduced. A hierarchy of energy scales is established, defining the criteria for realizing these phases. Finally, we reveal a non-analyticity in the surface-state dispersion at the projected nodal line, originating from distinct, terminating patches of surface states with unique spin textures in momentum space.

cond-mat.mes-hall↗
arXiv2026

Negative magnetoresistance in strained $α$-Sn and $α$-SnGe films in an in-plane magnetic field

To test the hypothesis that the chiral anomaly is responsible for negative magnetoresitance (MR) in \atn{}, we have studied magnetotransport in strained, epitaxial films of pure \aSn{} and the alloy \aSnGe{} that are in the Dirac semimetal and 3D topological insulator state, respectively. We have observed for both states a negative MR with current either parallel or transverse to the in-plane magnetic field, but with a different dependence of MR on $\vec{B}$ strength. Our results are inconsistent with the chiral anomaly and suggest that other mechanisms may be responsible for negative MR in the Dirac/Weyl semimetal phase of \aSn{}. We also discuss several factors in sample design and material quality that may be contributing to the incongruous observations of MR reported in studies of strained \atn{} films.

cond-mat.mtrl-sci↗
arXiv2023

Interplay between strain and size quantization in a class of topological insulators based on inverted-band semiconductors

We consider surface states in semiconductors with inverted-band structures, such as $\alpha$-Sn and HgTe. The main interest is the interplay of the effect of a strain of an arbitrary sign and that of the sample finite size. We consider, in particular, a model system comprised of a gapless semiconductor (e.g. HgTe or $\alpha$-Sn) of finite-width sandwiched between layers of a regular-band semiconductor (e.g. CdTe or InSb). We clarify the origin of various transitions that happen at a given strain with the change of the sample thickness, in particular the transition between the Dirac semimetal and quasi-3D (quantized) topological insulator. Our conclusion opposes those reached recently by the majority of researchers. We show that near the transition point the surface state cannot be treated as a truly topological one since the parameters of the problem are such that an appreciable overlap of the surface states' wave functions located at opposite boundaries occur. As a result, a spin-conserving, elastic impurity scattering between the states located at opposite boundaries will induce substantial backscattering and destroy the robustness of the surface state. For the k-p Kane model we derive hard-wall boundary conditions in the case when the regular-band materials form high barriers for the carriers of the inner inverted-band semiconductor (for example, CdTe/HgTe/CdTe and CdTe/$\alpha$-Sn/CdTe cases). We show that in this case the boundary conditions have universal and simple form and allow investigation of the realistic case of finite mass of the heavy-hole band, and comparison of the results obtained within the Kane and Luttinger models. In particular, a new type of surface states (wing states) developes with application of strain in the Kane model and is absent in the Luttinger model.

cond-mat.mes-hall↗
arXiv2021

Revisiting the physical origin and nature of surface states in inverted-band semiconductors

We revisit the problem of surface states in semiconductors with inverted band structures, such as $α$-Sn and HgTe. We unravel the confusion that arose over the past decade regarding the origin of the surface states, their topological nature, and the role of strain. Within a single minimalistic description, we reconcile different solutions found in the 1980s with the results obtained from modern-day numerical simulations, allowing us to unambiguously identify all branches of surface states around the $Γ$-point of the Brillouin zone in different regimes. We also show that strain is a smooth "deformation" to the surface states, following the usual continuity principle of physics, and not leading to any drastic change of the physical properties in these materials, in contrast to what has recently been advanced in the literature. We consider biaxial in-plane strain that is either tensile or compressive, leading to different branches of surface states for topological insulators and Dirac semimetals, respectively. Our model can help in interpreting numerous experiments on topological surface states originating from inverted-band semiconductors.

cond-mat.mes-hall↗
arXiv2020

Thermal Magnetic Fluctuations of a Ferroelectric Quantum Critical Point

Entanglement of two different quantum orders is of an interest of the modern condensed matter physics. One of the examples is the dynamical multiferroicity, where fluctuations of electric dipoles lead to magnetization. We investigate this effect at finite temperature and demonstrate an elevated magnetic response of a ferroelectric near the ferroelectric quantum critical point (FE QCP). We calculate the magnetic susceptibility of a bulk sample on the paraelectric side of the FE QCP at finite temperature and find enhanced magnetic susceptibility near the FE QCP. We propose quantum paraelectric strontium titanate (STO) as a candidate material to search for dynamic multiferroicity. We estimate the magnitude of the magnetic susceptibility for this material and find that it is detectable experimentally.

cond-mat.mtrl-sci↗
arXiv2017

Giant edge spin accumulation in a symmetric quantum well with two subbands

We have studied the edge spin accumulation in a high mobility two-dimensional electron gas formed in a symmetric well with two subbands. This study is strongly motivated by the recent experiment of Hernandez et al. [Phys. Rev. B {\bf 88}, 161305(R) (2013)] who demonstrated the spin accumulation near the edges of a bilayer symmetric GaAs structure in contrast to no effect in a single-layer configuration. The intrinsic mechanism of the spin-orbit interaction we consider arises from the coupling between two subband states of opposite parities. We obtain a parametrically large magnitude of the edge spin density for the two-subband sample as compared to the usual single-subband structure. We show that the presence of a gap in the system, i.e., the energy separation $Δ$ between the two subband bottoms, changes drastically the picture of the edge spin accumulation. Thus one can easily proceed from the regime of weak spin accumulation to the regime of strong one by varying the Fermi energy (electron density) and/or $Δ$. We estimate that by changing the gap $Δ$ from zero up to $1÷2$ K, the magnitude of the effect changes by three orders of magnitude. This opens up the possibility for the design of new spintronic devices.

cond-mat.mes-hall↗
arXiv2016

Killing Auger recombination in nanostructures by carrier spin polarization

In semiconductor nanostructures nonradiative Auger recombination is enhanced by the presence of boundaries which relax the momentum conservation and thereby removes the threshold reduction for these processes. We propose a method to strongly reduce the Auger recombination rate by injecting spin-polarized carriers. Our method is illustrated on the example of a quantum well in which the spin-orbit coupling of conduction band is negligible as compared to valence band and thus holes can be considered as spin-unpolarized. The suppression factor of the Auger recombination is determined by the two-dimensional character of the system, given by the ratio of the Fermi energy of electrons and the separation of the electron levels quantized in the growth direction. Our predictions can be tested experimentally and we discuss their implications for semiconductor lasers relying on injection of spin-polarized electrons.

cond-mat.mes-hall↗
arXiv2014

Edge spin accumulation in 2D electron and hole systems in a quasi-ballistic regime

We consider a two-dimensional structure with spin-orbit-related splitting of the electron (hole) spectrum and calculate the edge spin density which appears due to the intrinsic mechanism of spin-orbit interaction in the presence of a charge current through the structure. We concentrate on the quasi-ballistic case when a mean free path, being much smaller than the sample size, is larger than the spin precession length determined by the value of the spin-orbit splitting. We show that regardless of the presence or absence of the bulk spin current the main source of the edge spin density is the boundary scattering itself. The character of the edge spin density depends on the smoothness of the bulk impurity potential. We have calculated the edge spin density profile for an arbitrary smoothness of the scattering potential in the bulk, and discussed relation to the existing experiments for two-dimensional holes.

cond-mat.mes-hall↗
arXiv2012

Unitarity of scattering and edge spin accumulation

We consider a 2D ballistic and quasi-ballistic structures with spin-orbit-related splitting of the electron spectrum. The ballistic region is attached to the leads with a voltage applied between them. We calculate the edge spin density which arises in the presence of a charge current through the structure. We solve the problem with the use of the method of scattering states and clarify the important role of the unitarity of scattering. In the case of a straight boundary it leads to exact cancellation of long-wavelength oscillations of the spin density. In general, however, the smooth spin oscillations with the spin precession length may arise, as it happens, e.g., for the wiggly boundary. Moreover, we show that the result crucially depends on the form of the spin-orbit Hamiltonian.

cond-mat.mes-hall↗
arXiv2010

Edge spin accumulation in a ballistic regime

We consider a mesoscopic {\it ballistic} structure with Rashba spin-orbit splitting of the electron spectrum. The ballistic region is attached to the leads with a voltage applied between them. We calculate the edge spin density which appears in the presence of a charge current through the structure due to the difference in populations of electrons coming from different leads. Combined effect of the boundary scattering and spin precession leads to oscillations of the edge polarization with the envelope function decaying as a power law of the distance from the boundary. The problem is solved with the use of scattering states. The simplicity of the method allows to gain an insight into the underlaying physics. We clarify the role of the unitarity of scattering for the problem of edge spin accumulation. In case of a straight boundary it leads to exact cancellation of all long-wave oscillations of the spin density. As a result, only the Friedel-like spin density oscillations with the momentum 2k_F survive. However, this appears to be rather exceptional case. In general, the smooth spin oscillations with the spin precession length recover, as it happens, e.g., for the wiggly boundary. We demonstrate also, that there is no relation between the spin current in the bulk, which is zero in the considered case, and the edge spin accumulation.

cond-mat.mes-hall↗
arXiv2007

Spin relaxation at the singlet-triplet crossing in a quantum dot

We study spin relaxation in a two-electron quantum dot in the vicinity of the singlet-triplet crossing. The spin relaxation occurs due to a combined effect of the spin-orbit, Zeeman, and electron-phonon interactions. The singlet-triplet relaxation rates exhibit strong variations as a function of the singlet-triplet splitting. We show that the Coulomb interaction between the electrons has two competing effects on the singlet-triplet spin relaxation. One effect is to enhance the relative strength of spin-orbit coupling in the quantum dot, resulting in larger spin-orbit splittings and thus in a stronger coupling of spin to charge. The other effect is to make the charge density profiles of the singlet and triplet look similar to each other, thus diminishing the ability of charge environments to discriminate between singlet and triplet states. We thus find essentially different channels of singlet-triplet relaxation for the case of strong and weak Coulomb interaction. Finally, for the linear in momentum Dresselhaus and Rashba spin-orbit interactions, we calculate the singlet-triplet relaxation rates to leading order in the spin-orbit interaction, and find that they are proportional to the second power of the Zeeman energy, in agreement with recent experiments on triplet-to-singlet relaxation in quantum dots.

cond-mat.mes-hall↗
arXiv2005

Intrinsic vs. Extrinsic Spin Currents. Old Ideas in a New Light

We have described the electron spin dynamics in the presence of Rashba spin- orbit interaction and disorder using the spin-density matrix method. We showed that in the Born approximation in the scattering amplitude the spin current is zero for an arbitrary ratio of the spin-orbit splitting and the scattering rate and for an arbitrary disorder potential. We also describe some magnetotransport phenomena such as negative magnetoresistance and a negative charge Hall effect which occur in the presence of spin-orbit coupling.

cond-mat.mes-hall↗
arXiv2005

Intrinsic spin current for an arbitrary Hamiltonian and scattering potential

We have described electron spin dynamics in the presence of the spin-orbit interaction and disorder using the spin-density matrix method. Exact solution is obtained for an arbitrary 2D spin-orbit Hamiltonian and arbitrary smoothness of the disorder potential. Spin current depends explicitely on the disorder properties, namely the smoothness of the disorder potential, even in the ballistic limit when broadening by scattering is much smaller than the spin-orbit related splitting of the energy spectrum. In this sense universal intrinsic spin current does not exist.

cond-mat.mes-hall↗
arXiv2004

Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers

We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or DMS). By using appropriate physical boundary conditions, we find expressions for the resistances of these structures which are in general different from previous results in the literature. When the magnetoresistance of the contacts is negligible, we find that the spin-accumulation effect alone cannot account for the $d$ dependence observed in recent magnetoresistance data. In a limited parameter range, our formulas predict a strong $d$ dependence arising from the magnetic contacts in systems where their magnetoresistances are sizable.

cond-mat.mes-hall↗
arXiv2004

Nonexistence of intrinsic spin currents

We have described the electron spin dynamics in the presence of the spin-orbit interaction and disorder using the spin-density matrix method. We showed that in the Born approximation in the scattering amplitude the spin current is zero for an arbitrary ratio of the spin-orbit splitting and the scattering rate. Various types of the disorder potential are studied. We argue that the bulk spin current has always an {\it extrinsic} nature and depends explicitely on scattering by impurities since it appears only beyond the Born approximation in the scattering amplitude.

cond-mat.mes-hall↗
arXiv2003

Electron spin dynamics in quantum dots and related nanostructures due to hyperfine interaction with nuclei

We review and summarize recent theoretical and experimental work on electron spin dynamics in quantum dots and related nanostructures due to hyperfine interaction with surrounding nuclear spins. This topic is of particular interest with respect to several proposals for quantum information processing in solid state systems. Specifically, we investigate the hyperfine interaction of an electron spin confined in a quantum dot in an s-type conduction band with the nuclear spins in the dot. This interaction is proportional to the square modulus of the electron wave function at the location of each nucleus leading to an inhomogeneous coupling, i.e. nuclei in different locations are coupled with different strength. In the case of an initially fully polarized nuclear spin system an exact analytical solution for the spin dynamics can be found. For not completely polarized nuclei, approximation-free results can only be obtained numerically in sufficiently small systems. We compare these exact results with findings from several approximation strategies.

cond-mat.mes-hall↗