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Alexander Komarek

Publications and source records attributed to Alexander Komarek.

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Unveiling orbital landscapes in strongly correlated bulk nickelates with $s$-NIXS

We leverage $s$-orbital non-resonant inelastic X-ray scattering ($s$-NIXS) to perform orbital imaging on three bulk rare-earth nickelates spanning a range of formal nickel valence (3$d$ electron filling) from Ni$^{3+}$ (3$d^7$) to Ni$^{1+}$ (3$d^9$). Our results directly reveal the ground states of these compounds all with minimal theoretical input. In particular, we demonstrate the low-spin orbital configuration of trivalent LaNiO$_3$, the $d_{x^2-y^2}$ configuration of monovalent LaNiO$_2$, and resolve the effective $e_g$ crystal field splitting in the distorted octahedral environment of divalent La$_2$NiO$_4$. This work illustrates the potential of $s$-NIXS to study the ground state and excited states of strongly correlated materials without needing complex theoretical analysis of spectroscopic data.

cond-mat.str-el

Large anomalous Hall effect driven by non-vanishing Berry curvature in non-collinear antiferromagnetic Mn3Ge

It is well established that the anomalous Hall effect that a ferromagnet displays scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. Here we show that the non-collinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is 500 per ohm per cm at 2 K and 50 per ohm per cm at room temperature. The angular dependence of the anomalous Hall effect measurements confirm that the small residual in-plane magnetic moment has no role in the observed effect. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a non-vanishing Berry curvature that arises from the chiral spin structure, and which also results in a large spin Hall effect, comparable to that of platinum. The present results pave the way to realize room temperature antiferromagnetic spintronics and spin Hall effect based data storage devices.

cond-mat.str-el