arXiv subjects

Alexander L. Gaeta

Publications and source records attributed to Alexander L. Gaeta.

At least 19 recordsLinked to original sources

arXiv2026

Kerr Soliton Generation in Ultra-Compact Photonic Devices

Chip-based nonlinear photonics offer the capability to integrate devices with all the requisite photonic components (e.g., filters, couplers, detectors) into highly compact form factors. This offers the possibility of making the devices scalable, robust, and manufacturable. Such integrated photonic devices will enable applications in optical communications, precision metrology, microwave generation, and LIDAR. However, thermal instabilities represent a major hurdle in the deterministic operation of nonlinear optical processes in such integrated resonant structures such as microresonators. In this work we demonstrate deterministic and highly stable Kerr soliton comb generation in tight-spiral microresonators with comb spacings as low as 16 GHz. We perform a comprehensive experimentally-validated thermal model of such compact microresonators and reveal non-trivial thermally-driven instabilities governing the cavity soliton dynamics. We design and implement a fast feedback loop on the devices to overcome thermal perturbations and stabilize cavity-soliton states, including those that are otherwise unstable, and to allow for controlled transitions between the soliton states. Our approach enables the realization of thermally-stable highly compact soliton microcomb devices in a wide variety of photonic platforms.

physics.optics↗

arXiv2025

Frequency-stable nanophotonic microcavities via integrated thermometry

Field-deployable integrated photonic devices co-packaged with electronics will enable important applications such as optical interconnects, quantum information processing, precision measurements, spectroscopy, and microwave generation. Significant progress has been made over the past two decades on increasing the functional complexity of photonic chips. However, a critical challenge that remains is the lack of scalable techniques to overcome thermal perturbations arising from the environment and co-packaged electronics. Here, we demonstrate a fully integrated scheme to monitor and stabilize the temperature of a high-Q microresonator on a Si-based chip, which can serve as a photonic frequency reference. Our approach relies on a thin-film metallic resistor placed directly above the microcavity, acting as an integrated resistance thermometer, enabling unique mapping of the cavity's absolute resonance wavelength to the thermometer's electrical resistance. Following a one-time calibration, the microresonator can be accurately and repeatably tuned to any desired absolute resonance wavelength using thermometry alone with a root-mean squared wavelength error of <0.8 pm over a timespan of days. We frequency-lock a distributed feedback (DFB) laser to the microresonator and demonstrate a 48x reduction in its frequency drift, resulting in its center wavelength staying within +-0.5 pm of the mean over the duration of 50 hours in the presence of significant ambient fluctuations, outperforming many commercial DFB and wavelength-locker-based laser systems. Finally, we stabilize a soliton mode-locked Kerr comb without the need for photodetection, paving the way for Kerr-comb-based photonic devices that can potentially operate in the desired mode-locked state indefinitely.

physics.optics↗

arXiv2025

Telecom-to-Visible Quantum Frequency Converter on a Silicon Nitride Chip

Quantum frequency conversion serves a key role in the realization of hybrid quantum networks by interfacing between wavelength-incompatible platforms. Here we present the first quantum frequency converter connecting visible and telecom domains on a silicon nitride (SiN) chip, using Bragg-scattering four-wave mixing to upconvert heralded single photons from 1260 to 698 nm, which covers a 192 THz span. We examine the noise sources in SiN and devise approaches to suppress noise photons at the source and target frequencies to enable measurements at the single-photon level. We demonstrate an on-chip conversion efficiency of 5% in photon flux and describe design modifications that can be implemented to significantly improve it. Our results pave the way for the implementation of CMOS-compatible devices in quantum networks.

quant-ph↗

arXiv2025

Quantum State Tomography in a Third-Order Integrated Optical Parametric Oscillator

We measured the covariance matrix of the fields generated in an integrated third-order optical parametric oscillator operating above threshold. We observed up to $(2.3 \pm 0.3)$ dB of squeezing in amplitude difference, inferred $(4.9 \pm 0.7)$ dB of on-chip squeezing, while an excess of noise for the sum of conjugated quadratures hinders the entanglement. The degradation of amplitude correlations and state purity for the increasing of the pump power is consistent with the observed growth of the phase noise of the fields, showing the necessity of strategies for phase noise control aiming at entanglement generation in these systems.

quant-ph↗

arXiv2024

Nonlinear Dynamics of Coupled-Resonator Kerr-Combs

The nonlinear interaction of a microresonator pumped by a laser has revealed complex dynamics including soliton formation and chaos. Initial studies of coupled-resonator systems reveal even more complicated dynamics that can lead to deterministic modelocking and efficient comb generation. Here we perform theoretical analysis and experiments that provide insight into the dynamical behavior of coupled-resonator systems operating in the normal group-velocity-dispersion regime. Our stability analysis and simulations reveal that the strong mode-coupling regime, which gives rise to spectrally-broad comb states, can lead to an instability mechanism in the auxiliary resonator that destabilizes the comb state and prevents mode-locking. We find that this instability can be suppressed by introducing loss in the auxiliary resonator. We investigate the stability of both single- and multi-pulse solutions and verify our theoretical predictions by performing experiments in a silicon-nitride platform. Our results provide an understanding for accessing broad, efficient, relatively flat high-power mode-locked combs for numerous applications in spectroscopy, time-frequency metrology, and data communications.

physics.optics↗

arXiv2024

Overcoming stress limitations in SiN nonlinear photonics via a bilayer waveguide

Silicon nitride (SiN) formed via low pressure chemical vapor deposition (LPCVD) is an ideal material platform for on-chip nonlinear photonics owing to its low propagation loss and competitive nonlinear index. Despite this, LPCVD SiN is restricted in its scalability due to the film stress when high thicknesses, required for nonlinear dispersion engineering, are deposited. This stress in turn leads to film cracking and makes integrating such films in silicon foundries challenging. To overcome this limitation, we propose a bilayer waveguide scheme comprised of a thin LPCVD SiN layer underneath a low-stress and low-index PECVD SiN layer. We show group velocity dispersion tuning at 1550nm without concern for filmcracking while enabling low loss resonators with intrinsic quality factors above 1 million. Finally, we demonstrate a locked, normal dispersion Kerr frequency comb with our bilayer waveguide resonators spanning 120nm in the c-band with an on-chip pump power of 350mW.

physics.optics↗

arXiv2024

N-Way Frequency Beamsplitter for Quantum Photonics

Optical networks are the leading platform for the transfer of information due to their low loss and ability to scale to many information channels using optical frequency modes. To fully leverage the quantum properties of light in this platform, it is desired to manipulate higher-dimensional superpositions by orchestrating linear, beamsplitter-type interactions between several channels simultaneously. We propose a method of achieving simultaneous, all-to-all coupling between N optical frequency modes via N-way Bragg-scattering four-wave mixing. By exploiting the frequency degree of freedom, additional modes can be multiplexed in an interaction medium of fixed volume and loss, avoiding the introduction of excess noise. We generalize the theory of the frequency-encoded two-mode interaction to N modes under this four-wave mixing approach and experimentally verify the quantum nature of this scheme by demonstrating three-way multiphoton interference. The two input photons are shared among three frequency modes and display interference differing from that of two classical (coherent-state) inputs. These results show the potential of our approach for the scalability of photonic quantum information processing to general N-mode systems in the frequency domain.

quant-ph↗

arXiv2023

Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications

Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of functional properties and consequent device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process and demonstrated various functionalities for potential applications. Comprehensive chemical, spectroscopic and microscopic characterization confirms the growth of ordered nanosheet-like hexagonal BN. Functionally, nanosheets show hydrophobicity, high lubricity (low coefficient of friction), low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of applications potential for room temperature grown h-BN nanosheets as it can be feasible on any given substrate, thus creating a scenario for h-BN on demand at frugal thermal budget.

physics.app-ph↗

arXiv2023

Narrow linewidth semiconductor lasers based on nonlinear self-injection locking

Self-injection locking techniques for stabilizing lasers have been developed using passive cavities to increase the effective lifetime of the laser cavity, thereby reducing the linewidth of the laser. We propose and demonstrate a new technique based on nonlinear self-injection locking (N-SIL) which we implement via feedback from the gain-narrowed Stokes mode of a fiber Brillouin oscillator. By blue-shifting the Stokes field back to its pump frequency with an electro-optic modulator we realize recursive linewidth reduction that eliminates the phase drift caused by spontaneous emission noise. The fundamental linewidth limit is set by the spontaneous emission limit of the nonlinear oscillator, far lower than the spontaneous emission limit of a semiconductor laser. We demonstrate the power of this approach by achieving sub-hertz fundamental linewidth from the output of a commercial DFB laser and noise performance that significantly exceeds that of conventional SIL. We also and propose alternative fully-integrated designs in CMOS-compatible photonic platforms that allow for highly compact and robust implementations.

physics.optics↗

arXiv2023

Phonon-Enhanced Nonlinearities in Hexagonal Boron Nitride

We investigate optical nonlinearities that are induced and enhanced due to the strong phonon resonance in hexagonal boron nitride. We predict and observe large sub-picosecond duration signals due to four-wave mixing (FWM) during resonant excitation. The resulting FWM signal allows for time-resolved observation of the crystal motion. In addition, we observe enhancements of third-harmonic generation with resonant pumping at the hBN transverse optical phonon. Phonon-induced nonlinear enhancements are also predicted to yield large increases in high-harmonic efficiencies.

physics.optics↗

arXiv2023

All-optical frequency division on-chip using a single laser

The generation of spectrally pure high-frequency microwave signals is a critical functionality in fundamental and applied sciences, including metrology and communications. The development of optical frequency combs has enabled the powerful technique of optical frequency division (OFD) to produce microwave oscillations of the highest quality. The approaches for OFD demonstrated to date demand multiple lasers with space- and energy-consuming optical stabilization and electronic feedback components, resulting in device footprints incompatible with integration into a compact and robust photonic platform. Here, we demonstrate all-optical OFD on a single photonic chip driven with a single continuous-wave laser. We generate a dual-point frequency reference using the beat frequency of the signal and idler fields from a microresonator-based optical parametric oscillator (OPO), which achieves high phase stability due to the inherently strong signal-idler frequency correlations. We implement OFD by optically injecting the signal and idler fields from the OPO to a Kerr-comb microresonator on the same chip. We show that the two distinct dynamical states of Kerr cavities can be passively synchronized, allowing broadband frequency locking of the comb state, which transfers the stability of the OPO frequencies to the repetition rate of the Kerr comb. A 630-fold phase-noise reduction is observed when the Kerr comb is synchronized to the OPO, which represents the lowest noise generated on the silicon-nitride platform. Our work demonstrates a simple, effective approach for performing OFD and provides a pathway toward chip-scale devices that can generate microwave frequencies comparable to the purest tones produced in metrological laboratories. This technology can significantly boost the further development of data communications and microwave sensing.

physics.optics↗

arXiv2023

Large regenerative parametric amplification on chip at ultra-low pump powers

Chip-based optical amplifiers can significantly expand the functionalities of photonic devices. In particular, optical-parametric amplifiers (OPAs), with engineerable gain-spectra, are well-suited for nonlinear-photonic applications. Chip-based OPAs typically require long waveguides that occupy a large footprint, and high pump powers that cannot be easily produced with chip-scale lasers. We theoretically and experimentally demonstrate a microresonator-assisted regenerative OPA that benefits from the large nonlinearity enhancement of microresonators and yields a high gain in a small footprint. We achieve 30-dB parametric gain with only 9 mW of cw-pump power and show that the gain spectrum can be engineered to cover telecom channels inaccessible with Er-based amplifiers. We further demonstrate the amplification of Kerr-soliton comb lines and the preservation of their phase properties. Additionally, we demonstrate amplification by injection locking of optical-parametric oscillators, which corresponds to a regenerative amplifier pumped above the oscillation threshold. Novel dispersion engineering techniques such as coupled cavities and higher-order-dispersion phase matching can further extend the tunability and spectral coverage of our amplification schemes. The combination of high gain, small footprint, low pump power, and flexible gain-spectra engineering of our regenerative OPA is ideal for amplifying signals from the nanowatt to microwatt regimes for portable or space-based devices where ultralow electrical power levels are required and can lead to important applications in on-chip optical- and microwave-frequency synthesis and precise timekeeping.

physics.optics↗

arXiv2023

Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

The fabrication processes of silicon nitride photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, we show that propagation loss as low as 0.42 dB/cm can be achieved using foundry compatible processes by solely reducing waveguide surface roughness. By post-processing the fabricated devices using rapid thermal anneal (RTA) and furnace anneal, we achieve propagation losses down to 0.28 dB/cm and 0.06 dB/cm, respectively. These low losses are comparable to the conventional devices using high temperature, high-stress low-pressure chemical vapor deposition (LPCVD) films. We also tune the dispersion of the devices, and proved that these devices can be used for linear and nonlinear applications. Low threshold parametric oscillation, broadband frequency combs and narrow-linewidth laser are demonstrated. Our work demonstrates the feasibility of scalable photonic systems based on foundries.

physics.optics↗

arXiv2022

High Power on-chip Integrated Laser

The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high power is the low energy efficiency at high pumping currents, dictated by the small size of the active device. Here we break this power limitation by demonstrating a platform that relies on the coupling of a broad-area multimode gain to a silicon-nitride feedback chip, which acts as an external cavity. The feedback provided by the silicon-nitride chip is routed through a ring resonator and a single-mode filter, thus causing the otherwise multimode-gain chip to concentrate its power into a single highly-coherent mode. Our device produces more than 150 mW of power and 400 kHz linewidth. We achieve these high-performance metrics while maintaining a small footprint of 3 mm^2.

physics.optics↗

arXiv2022

Unzipping hBN with ultrashort mid-infrared pulses

Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser-writing require cleanroom facilities or leave residue. Here, we describe a new approach to create atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation in the mid-infrared (mid-IR). We term this phenomenon "unzipping" to describe the rapid formation and growth of a <30-nm-wide crack from a point within the laser-driven region. The formation of these features is attributed to large atomic displacements and high local bond strain from driving the crystal at a natural resonance. This process is distinguished by (i) occurring only under resonant phonon excitation, (ii) producing highly sub-wavelength features, and (iii) sensitivity to crystal orientation and pump laser polarization. Its cleanliness, directionality, and sharpness enable applications in in-situ flake cleaving and phonon-wave-coupling via free space optical excitation.

cond-mat.mtrl-sci↗

arXiv2021

Femtosecond Pulse Generation via an Integrated Electro-Optic Time Lens

Integrated femtosecond pulse and frequency comb sources are critical components for a wide range of applications. The leading approaches for on-chip pulse generation rely on mode locking inside microresonator with either third-order nonlinearity or with semiconductor gain. These approaches, however, are limited in noise performance, wavelength tunability and repetition rates. Alternatively, sub-picosecond pulses can be synthesized without mode-locking, by modulating a continuous-wave (CW) single-frequency laser using a cascade of electro-optic (EO) modulators. This method is particularly attractive due to its simplicity, robustness, and frequency-agility but has been realized only on a tabletop using multiple discrete EO modulators and requiring optical amplifiers (to overcome large insertion losses), microwave amplifiers, and phase shifters. Here we demonstrate a chip-scale femtosecond pulse source implemented on an integrated lithium niobate (LN) photonic platform18, using cascaded low-loss electro-optic amplitude and phase modulators and chirped Bragg grating, forming a time-lens system. The device is driven by a CW distributed feedback (DFB) chip laser and controlled by a single CW microwave source without the need for any stabilization or locking. We measure femtosecond pulse trains (520 fs duration) with a 30-GHz repetition rate, flat-top optical spectra with a 10-dB optical bandwidth of 12.6 nm, individual comb-line powers above 0.1 milliwatt, and pulse energies of 0.54 picojoule. Our results represent a tunable, robust and low-cost integrated pulsed light source with CW-to-pulse conversion efficiencies an order of magnitude higher than achieved with previous integrated sources. Our pulse generator can find applications from ultrafast optical measurement to networks of distributed quantum computers.

physics.optics↗

arXiv2021

Theory of $χ^{(2)}$-microresonator-based frequency conversion

Microresonator-based platforms with $χ^{(2)}$ nonlinearities have the potential to perform frequency conversion at high efficiencies and ultralow powers with small footprints. The standard doctrine for achieving high conversion efficiency in cavity-based devices requires "perfect matching", that is, zero phase mismatch while all relevant frequencies are precisely at a cavity resonance, which is difficult to achieve in integrated platforms due to fabrication errors and limited tunabilities. In this Letter, we show that the violation of perfect matching does not necessitate a reduction in conversion efficiency. On the contrary, in many cases, mismatches should be intentionally introduced to improve the efficiency or tunability of conversion. We identify the universal conditions for maximizing the efficiency of cavity-based frequency conversion and show a straightforward approach to fully compensate for parasitic processes such as thermorefractive and photorefractive effects that, typically, can limit the conversion efficiency. We also show rigorously that these high-efficiency states are stable.

physics.optics↗

arXiv2021

Integrated Kerr frequency comb-driven silicon photonic transmitter

The exponential growth of computing needs for artificial intelligence and machine learning has had a dramatic impact on data centre energy consumption, which has risen to environmentally significant levels. Using light to send information between compute nodes can dramatically decrease this energy consumption while simultaneously increasing bandwidth. Through wavelength-division multiplexing with chip-based microresonator Kerr frequency combs, independent information channels can be encoded onto many distinct colours of light in the same optical fibre for massively parallel data transmission with low energy. While previous demonstrations have relied on benchtop equipment for filtering and modulating Kerr comb wavelength channels, data centre interconnects require a compact on-chip form factor for these operations. Here, we demonstrate the first integrated silicon photonic transmitter using a Kerr comb source. The demonstrated architecture is scalable to hundreds of wavelength channels, enabling a fundamentally new class of massively parallel terabit-scale optical interconnects for future green hyperscale data centres.

physics.app-ph↗