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Alexander M. Mumlyakov

Publications and source records attributed to Alexander M. Mumlyakov.

4 recordsLinked to original sources

Interleaved Benchmarking with Single-Qubit References

Cross-entropy benchmarking (XEB) with single-qubit reference sequences is widely used to characterize multi-qubit gates in large-scale quantum processors, despite the lack of a rigorous theoretical justification. Here we show that the commonly employed additive single-qubit errors approximation underlying this approach breaks down and leads to a systematic overestimation of gate fidelities. We derive an analytical expression for the joint decay of simultaneous single-qubit reference sequences, identify when interleaved circuits generate sufficient randomization for the standard depolarizing approximation, and obtain a refined expression for the interleaved gate fidelity estimation. Experiments on a superconducting quantum processor validate the theory and demonstrate that fidelities obtained using XEB with single-qubit references agree with those extracted from standard interleaved randomized benchmarking (IRB), while achieving higher precision due to reduced reference-sequence errors. Our results establish theoretical foundation for interleaved benchmarking protocols employing single-qubit reference sequences and show that, with appropriate post-processing, they provide a simple and accurate alternative to multi-qubit Clifford reference circuits.

quant-ph

Native CCZ Gate with Fluxonium Qubits and a Microwave-Driven Coupler

Native multi-qubit gates could reduce the overhead associated with decompositions into single- and two-qubit operations, but whether they can simultaneously provide high fidelity, simple control and robustness against parasitic interactions in scalable architectures remains unclear. Here we experimentally realize a 65-ns native controlled-controlled-phase operation, locally equivalent to the Toffoli gate, with a fidelity of 99.39(5)% in a three-qubit processor unit based on fluxonium qubits coupled via a microwave-driven transmon coupler. The implemented operation would require CZ fidelities of approximately 99.94% if realized through a conventional decomposition. The gate is implemented with a single control pulse, that relies on a simple calibration procedure yielding coherence-limited performance. This processor unit naturally extends to scalable two-dimensional layouts with low parasitic interactions. Altogether, these results establish native multi-qubit gates as a viable hardware-efficient primitive for scalable superconducting quantum processors.

quant-ph

Silicon nitride on-chip C-band spontaneous emission generation based on lanthanide doped microparticles

The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse luminescent particles into lithographically defined wells above a 200 nm-thick silicon nitride taper coupler. A fabrication process involving wells etching, particle deposition, and planarization enables precise integration while maintaining waveguide integrity. When pumped at 950 nm with a diode laser, the device emits broadband radiation in the 1500-1600 nm range, covering the optical telecommunication C-band. Numerical simulations yield an average coupling efficiency of 0.25% into the fundamental waveguide mode, suggesting significant potential for further device optimization. The approach provides a scalable route for integrating broadband telecommunications emitters on a silicon nitride platform.

physics.optics

Superconducting single-photon detector integrated in DBR with optical microconnector for MM or SM fiber

This paper presents the development of a superconducting nanowire single-photon detector (SNSPD) integrated into a distributed Bragg reflector (DBR) with a design center wavelength of 830 nm and a width of 200 nm. This SNSPD is made of a superconducting niobium nitride (NbN) thin film that is produced using plasma-enhanced atomic layer deposition (PEALD). The DBR is made of 15 alternating layers of silicon nitride and silicon oxide that are produced through plasma-enhanced chemical vapor deposition (PECVD). The reflection efficiency of the mirror is 90% at a wavelength of 830 nm. For sufficient optical coupling, an optical micro-connector optimized for multimode or single-mode optical fibers with a diameter of 128 μm was formed using two-photon polymerization techniques. The niobium nitride film was deposited onto the DBR surface in-situ in two separate reactors connected by a vacuum transfer. The in-situ technique of deposition of a superconducting niobium nitride film and a distributed Bragg reflector has allowed achieving a detection efficiency of 90% at a wavelength of 830 nm and a dark count rate of 10 s-1 at a temperature of 2.5 K. Additionally, the detector jitter was 50 ps.

cond-mat.supr-con