arXiv subjects

Alexandre Pofelski

Publications and source records attributed to Alexandre Pofelski.

4 recordsLinked to original sources

arXiv2025

Enhanced spin-to-charge conversion in La$_{0.67}$Sr$_{0.33}$MnO$_3$/NdNiO$_3$ bilayers at the nickelate metal-insulator phase transition

Phase transition materials such as NdNiO3 (NNO) when coupled with low damping ferromagnets such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) can lead to new multi-functional material systems harnessing the interplay of charge, spin and orbital degrees of freedom. In this study, we probe the evolution of the spin-to-charge conversion in epitaxial all-oxide LSMO (12 nm)/NNO (4, 8, and 16 nm) bilayers. Using spin pumping ferromagnetic resonance we track the spin-charge conversion in the NNO layer through the paramagnetic metal to antiferromagnetic insulator transition and observe a pronounced enhancement of the inverse spin Hall effect signal at the onset of this transition. We attribute this enhancement to the electronic and magnetic disorder in NNO at the first-order phase transition, thereby providing insights into the mechanism of spin transport through the phase transition. The tunability of spin charge conversion in this low damping bilayer system offers a pathway for developing multifunctional, energy-efficient spintronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Temperature dependent spin dynamics in La$_{0.67}$Sr$_{0.33}$MnO$_3$/Pt bilayers

Complex ferromagnetic oxides such as La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) offer pathways for creating energy efficient spintronic devices with new functionalities. LSMO exhibits high-temperature ferromagnetism, half metallicity, sharp resonance linewidth, low damping and a large anisotropic magnetoresistance response. Combined with Pt, a proven material with high spin-charge conversion efficiency, LSMO can be used to create robust nano-oscillators for neuromorphic computing. Ferromagnetic resonance (FMR) and device level spin-pumping FMR measurements are performed to investigate the magnetization dynamics and spin transport in NdGaO3(110)/LSMO(15 nm)/Pt(0 and 5 nm) thin films ranging from 300K to 90K and compare the device performance with Py(7 nm)/Pt(5 nm) sample. The spin current pumped into Pt is quantified to determine the temperature dependent influence of interfacial interactions. The generated spin current in the micro-device is maximum at 170K for the optimally grown LSMO/Pt films. Additionally, this bilayer system exhibits low magnetic Gilbert damping (0.002), small linewidth (12 Oe) and a large spin Hall angle ($\approx$ 3.2%) at 170K. By fine-tuning the LSMO/Pt interface quality and integrating it into the device structure, the system exhibits a fourfold enhancement in signal output for LSMO/Pt devices compared to the Pt/Py system. Such robust device level performance can pave way for energy-efficient spintronic based devices.

cond-mat.mtrl-sci↗

arXiv2023

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V2O3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V2O3, especially the strain-induced large variations along the c-axis. Engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode.

cond-mat.mtrl-sci↗

arXiv2022

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elastic deformation of the porous micropillars, set under stress by the lattice mismatch between Ge and Si, and on the diffusion of Ge into the mesoporous patterned substrate attenuating the mismatch strain at the Ge/Si interface.

cond-mat.mtrl-sci↗