arXiv subjects

Alexandru B. Georgescu

Publications and source records attributed to Alexandru B. Georgescu.

29 records · Page 2Linked to original sources

arXiv2020

Observation of high-temperature quantum anomalous Hall regime in intrinsic MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice

The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and its most consequential manifestation is the dissipation-free flow of chiral charge currents at the edges that can potentially transform future quantum electronics. Here we report a previously unknown Berry-curvature-driven anomalous Hall regime ('Q-window') at above-Kelvin temperatures in the magnetic topological bulk crystals where through growth Mn ions self-organize into a period-ordered MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice. Robust ferromagnetism of the MnBi$_2$Te$_4$ monolayers opens a large surface gap, and anomalous Hall conductance reaches an $e^2/h$ quantization plateau when the Fermi level is tuned into this gap within a Q-window in which the anomalous Hall conductance from the bulk is to a high precision zero. The quantization in this new regime is not obstructed by the bulk conduction channels and thus should be present in a broad family of topological magnets.

cond-mat.mtrl-sci↗

arXiv2019

Length-scales of interfacial coupling between metal-insulator phases in oxides

Controlling phase transitions in transition metal oxides remains a central feature of both technological and fundamental scientific relevance. A well-known example is the metal-insulator transition which has been shown to be highly controllable while a less well understood aspect of this phenomenon is the length scale over which the phases can be established. To gain further insight into this issue, we have atomically engineered an artificially phase separated system through fabricating epitaxial superlattices consisting of SmNiO$_{3}$ and NdNiO$_{3}$, two materials undergoing a metal-to-insulator transition at different temperatures. By combining advanced experimental techniques and theoretical modeling, we demonstrate that the length scale of the metal-insulator transition is controlled by the balance of the energy cost of the domain wall between a metal and insulator and the bulk energetics. Notably, we show that the length scale of this effect exceeds that of the physical coupling of structural motifs, introducing a new paradigm for interface-engineering properties that are not available in bulk

cond-mat.str-el↗

arXiv2019

Disentangling lattice and electronic contributions to the metal-insulator transition from bulk vs. layer confined RNiO$_3$

In complex oxide materials, changes in electronic properties are often associated with changes in crystal structure, raising the question of the relative roles of the electronic and lattice effects in driving the metal-insulator transition. This paper presents a combined theoretical and experimental analysis of the dependence of the metal-insulator transition of NdNiO$_3$ on crystal structure, specifically comparing properties of bulk materials to one and two layer samples of NdNiO$_3$ grown between multiple electronically inert NdAlO$_3$ counterlayers in a superlattice. The comparison amplifies and validates a theoretical approach developed in previous papers and disentangles the electronic and lattice contributions, through an independent variation of each. In bulk NdNiO$_3$ the correlations are not strong enough to drive a metal-insulator transition by themselves: a lattice distortion is required. Ultra-thin films exhibit two additional electronic effects and one lattice-related effect. The electronic effects are quantum confinement, leading to dimensional reduction of the electronic Hamiltonian, and an increase in electronic bandwidth due to counterlayer induced bond angle changes. We find that the confinement effect is much more important. The lattice effect is an increase in stiffness due to the cost of propagation of the lattice disproportionation into the confining material.

cond-mat.str-el↗

arXiv2019

Surface Piezoelectricity of (0001) Sapphire

Interfaces of sapphire are of technological relevance as sapphire is used as a substrate in electronics, lasers, and Josephson junctions for quantum devices. In addition, its surface is potentially useful in catalysis. Using first principles calculations, we show that, unlike bulk sapphire which has inversion symmetry, the (0001) sapphire surface is piezoelectric. The inherent broken symmetry at the surface leads to a surface dipole and a significant response to imposed strain: the magnitude of the surface piezoelectricity is comparable to that of bulk piezoelectrics.

cond-mat.mtrl-sci↗

arXiv2018

Control of hidden ground-state order in NdNiO$_3$ superlattices

The combination of charge and spin degrees of freedom with electronic correlations in condensed matter systems leads to a rich array of phenomena, such as magnetism, superconductivity, and novel conduction mechanisms. While such phenomena are observed in bulk materials, a richer array of behaviors becomes possible when these degrees of freedom are controlled in atomically layered heterostructures, where one can constrain dimensionality and impose interfacial boundary conditions. Here, we unlock a host of unique, hidden electronic and magnetic phase transitions in NdNiO$_3$ while approaching the two-dimensional (2D) limit, resulting from the differing influences of dimensional confinement and interfacial coupling. Most notably, we discover a new phase in fully 2D, single layer NdNiO$_3$, in which all signatures of the bulk magnetic and charge ordering are found to vanish. In addition, for quasi two-dimensional layers down to a thickness of two unit cells, bulk-type ordering persists but separates from the onset of insulating behavior in a manner distinct from that found in the bulk or thin film nickelates. Using resonant x-ray spectroscopies, first-principles theory, and model calculations, we propose that the single layer phase suppression results from a new mechanism of interfacial electronic reconstruction based on ionicity differences across the interface, while the phase separation in multi-layer NdNiO$_3$ emerges due to enhanced 2D fluctuations. These findings provide insights into the intertwined mechanisms of charge and spin ordering in strongly correlated systems in reduced dimensions and illustrate the ability to use atomic layering to access hidden phases.

cond-mat.str-el↗

arXiv2017

Symmetry Breaking in Occupation Number Based Slave-Particle Methods

We describe a theoretical approach for finding spontaneously symmetry-broken electronic phases due to strong electronic interactions when using recently developed slave-particle (slave-boson) approaches based on occupation numbers. We describe why, to date, spontaneous symmetry breaking has proven difficult to achieve in such approaches. We then provide a total-energy based approach for introducing auxiliary symmetry breaking fields into the solution of the slave-particle problem that leads to lowered total energies for symmetry broken phases. We point out that not all slave-particle approaches yield to energy lowering: the slave-particle model being used must explicitly describe the degrees of freedom that break symmetry. Finally, our total energy approach permits us to greatly simplify the formalism used to achieve a self-consistent solution between spinon and slave modes while increasing numerical stability and greatly speeding up the calculations.

cond-mat.str-el↗

arXiv2016

Experimental verification of orbital engineering at the atomic scale: charge transfer and symmetry breaking in nickelate heterostructures

Epitaxial strain, layer confinement and inversion symmetry breaking have emerged as powerful new approaches to control the electronic and atomic-scale structural properties in complex metal oxides. Nickelate heterostructures, based on RENiO$_3$, where RE is a trivalent rare-earth cation, have been shown to be relevant model systems since the orbital occupancy, degeneracy, and, consequently, the electronic/magnetic properties can be altered as a function of epitaxial strain, layer thickness and superlattice structure. One such recent example is the tri-component LaTiO$_3$-LaNiO$_3$-LaAlO$_3$ superlattice, which exhibits charge transfer and orbital polarization as the result of its interfacial dipole electric field. A crucial step towards control of these parameters for future electronic and magnetic device applications is to develop an understanding of both the magnitude and range of the octahedral network's response towards interfacial strain and electric fields. An approach that provides atomic-scale resolution and sensitivity towards the local octahedral distortions and orbital occupancy is therefore required. Here, we employ atomic-resolution imaging coupled with electron spectroscopies and first principles theory to examine the role of interfacial charge transfer and symmetry breaking in a tricomponent nickelate superlattice system. We find that nearly complete charge transfer occurs between the LaTiO$_3$ and LaNiO$_3$ layers, resulting in a Ni$^{2+}$ valence state. We further demonstrate that this charge transfer is highly localized with a range of about 1 unit cell, within the LaNiO$_3$ layers. The results presented here provide important feedback to synthesis efforts aimed at stabilizing new electronic phases that are not accessible by conventional bulk or epitaxial film approaches.

cond-mat.mtrl-sci↗

arXiv2015

Generalized slave-particle method for extended Hubbard models

We introduce a set of generalized slave-particle models for extended Hubbard models that treat localized electronic correlations using slave-boson decompositions. Our models automatically include two slave-particle methods of recent interest, the slave-rotor and slave-spin methods, as well as a ladder of new intermediate models where one can choose which of the electronic degrees of freedom (e.g., spin or orbital labels) are treated as correlated degrees of freedom by the slave bosons. In addition, our method removes the aberrant behavior of the slave-rotor model at weak correlation strength by removing the contribution of unphysical states from the bosonic Hilbert space. The flexibility of our formalism permits one to separate and isolate the effect of correlations on the key degrees of freedom.

cond-mat.str-el↗

arXiv2014

Dynamical control of orbital occupations via a ferroelectric-induced polar state in metallic manganites

The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering in metal oxides. Here, we show how to dynamically modulate the orbital populations on Mn atoms at ferroelectric/manganite interfaces by switching the ferroelectric polarization. The change in orbital occupation can be as large as 10\%, greatly exceeding that of bulk manganites. This flippable orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use {\it ab initio} theory, epitaxial thin film growth, and scanning transmission electron microscopy to verify the predicted interfacial polar state and concomitant orbital splittings.

cond-mat.mtrl-sci↗

arXiv2014

Reversible modulation of orbital occupations via an interface-induced state in metallic manganites

The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering inmetal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroelectric polarization on the nanoscale. The change in orbital occupation can be as large as 10%, greatly exceeding that of bulk manganites. This reversible orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use epitaxial thin film growth and scanning transmission electron microscopy to verify this key interfacial polar distortion and discuss the potential of reversible control of orbital polarization via nanoscale ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2011

High-resolution spatial mapping of the temperature distribution of a Joule self-heated graphene nanoribbon

We investigate the temperature distributions of Joule self-heated graphene nanoribbons (GNRs) with a spatial resolution finer than 100 nm by scanning thermal microscopy (SThM). The SThM probe is calibrated using the Raman G mode Stokes/anti-Stokes intensity ratio as a function of electric power applied to the GNR devices. From a spatial map of the temperature distribution, heat dissipation and transport pathways are investigated. By combining SThM and scanning gate microscopy data from a defected GNR, we observe hot spot formation at well-defined, localized sites.

cond-mat.mes-hall↗