arXiv subjects

Alexej Pashkin

Publications and source records attributed to Alexej Pashkin.

At least 19 recordsLinked to original sources

arXiv2026

Pressure-tuning of electronic structure of CeTe3 probed by femtosecond collective mode spectroscopy

We use femtosecond optical spectroscopy to study the evolution of coherent order-parameter dynamics in the prototypical charge-density-wave (CDW) system CeTe3 under hydrostatic pressure. The CDW transition temperature decreases from approximately 570 K at ambient pressure to near room temperature at approximately 6 GPa. The pressure dependence of the order-parameter recovery dynamics indicates enhanced electron-phonon coupling with increasing pressure, implying that CDW suppression is driven predominantly by the reduction in Fermi-surface nesting. Above 7 GPa, no evidence of CDW order is observed down to cryogenic temperatures. Concurrently, the relaxation dynamics exhibit significant slowing down at low-temperatures, consistent with emerging heavy-electron behaviour due to pressure-enhanced hybridization between localized Ce 4f levels and itinerant carriers.

cond-mat.str-el↗

arXiv2026

Light-induced effective magnetic fields in Landau quantized graphene

Ultrafast magnetism triggered by circularly polarized radiation underpins ultrafast spin control, relevant to future technologies, e.g., opto-spintronics and magnonics. The dynamics are often complicated and intertwined among correlated subsystems, such as electrons, spins, phonons, plasmons, topology, and lattice, due to many-body quantum coupling at ultrafast timescales. Here, we demonstrate light-induced effective magnetic fields generated by selective excitation between non-equidistant Landau quantized states in graphene, a prototypical Dirac material, using circularly polarized pulses. By magnetically tuning the Landau-level transition resonance away from other low-energy excitations, we obtain a clean electrostatically controllable platform and identify the microscopic origin of the light-induced magnetic signals, independent of sublattice coupling. Because different Landau levels carry distinct optical Hall conductivities, direct modification of their occupancies via optical excitations creates transient Faraday rotation signals with dispersive magnetic-field dependence, mirroring the static magneto-optical lineshape. The induced effective magnetic field normalized by the pump electric field exceeds typical reported values for the inverse Faraday effect of electronic origin. Our results establish a clear microscopic picture of the inverse Faraday effect of electronic origin, which can trigger hierarchical dynamics among correlated sublattices once Landau-level transitions are magnetically tuned to coincide with other low-energy excitations in Dirac systems and related materials.

cond-mat.str-el↗

arXiv2025

Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals

We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear interaction of spectrally narrow THz pulses with plasmon oscillations in a two-dimensional electron gas on an AlGaN/GaN interface integrated with metallic grating. Nonlinear effects are observed as ultrafast, pump-induced changes in THz transmission, with relative transparency strongly dependent on plasmonic mode excitation and saturating at pump fluences of about 200 nJ cm-2. The maximal relative transparency, reaching 45 % at 350 nJ cm -2, occurs under resonant excitation of a localized plasmon mode at the strong electrostatic modulation of 2DEG concentration. Transient dynamics reveal ultrafast relaxation times of 15-20 ps, while the effects can be observed at elevated temperatures of up to 150 K. A nonlinear model of plasmonic crystal, based on finite-difference time-domain electrodynamic simulations coupled with viscous hydrodynamic electron transport model, elucidates key nonlinear mechanisms, including near-field effects under metallic gratings, electron heating, plasmon resonance broadening, and redshift. These results demonstrate that even conventional semiconductors such as AlGaN/GaN can achieve nonlinear THz responses comparable to or exceeding those of graphene, showing strong potential for ultrafast THz modulation and nonlinear photonics applications.

physics.optics↗

arXiv2025

High-pressure modulation of breathing kagome lattice: Cascade of Lifshitz transitions and evolution of the electronic structure

The interplay between electronic correlations, density wave orders, and magnetism gives rise to several fascinating phenomena. In recent years, kagome metals have emerged as an excellent platform for investigating these unique properties, which stem from their itinerant carriers arranged in a kagome lattice. Here, we show that electronic structure of the prototypical kagome metal, Fe$_3$Sn$_2$, can be tailored by manipulating the breathing distortion of its kagome lattice with external pressure. The breathing distortion is suppressed around 15 GPa and reversed at higher pressures. These changes lead to a series of Lifshitz transitions that we detect using broadband and transient optical spectroscopy. Remarkably, the strength of the electronic correlations and the tendency to carrier localization are enhanced as the kagome network becomes more regular, suggesting that breathing distortion can be a unique control parameter for the microscopic regime of the kagome metals and their electron dynamics.

cond-mat.str-el↗

arXiv2025

Simple THz phase retarder based on Mach-Zehnder interferometer for polarization control

On-demand polarization control of electromagnetic waves is the fundamental element of modern optics. Its interest has recently been expanded in the terahertz (THz) range for coherent excitation of collective quasiparticles in matters, triggering a wide variety of non-trivial intriguing physics, e.g., anharmonicity, nonlinear coupling, and metastability. Wavelength tunability in THz polarization control is fundamentally important for the resonant excitation of collective modes. Here, we propose and demonstrate a simple and convenient THz phase retarder based on the Mach-Zehnder interferometer to obtain circular polarization. The efficiency of THz polarization conversion is demonstrated by the achieved high polarization degree of more than 99.9% and a large transmission of ~76%. The simple and compact setup allows us to adapt the phase retarder to existing setups readily and will contribute to further exploration of ultrafast science, e.g., chiral phononics.

physics.optics↗

arXiv2024

Highly efficient broadband THz upconversion with Dirac materials

The use of the THz frequency domain in future network generations offers an unparalleled level of capacity, which can enhance innovative applications in wireless communication, analytics, and imaging. Communication technologies rely on frequency mixing, enabling signals to be converted from one frequency to another and transmitted from a sender to a receiver. Technically, this process is implemented using nonlinear components such as diodes or transistors. However, the highest operation frequency of this approach is limited to sub-THz bands. Here, we demonstrate the upconversion of a weak sub-THz signal from a photoconductive antenna to multiple THz bands. The key element is a high-mobility HgTe-based heterostructure with electronic band inversion, leading to one of the strongest third-order nonlinearities among all materials in the THz range. Due to the Dirac character of electron dispersion, the highly intense sub-THz radiation is efficiently mixed with the antenna signal, resulting in a THz response at linear combinations of their frequencies. The field conversion efficiency above 2$\%$ is provided by a bare tensile-strained HgTe layer with a thickness below 100 nm at room temperature under ambient conditions. Devices based on Dirac materials allow for high degree of integration, with field-enhancing metamaterial structures, making them very promising for THz communication with unprecedented data transfer rate.

physics.optics↗

arXiv2024

Hot electron dynamics in a semiconductor nanowire under intense THz excitation

We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distributions anticipates a significant electron population in both L- and X-valleys. The two-temperature model is utilized for a quantitative analysis of the dynamics of the electron gas temperature under THz pumping at various power levels.

cond-mat.mes-hall↗

arXiv2023

Possible Eliashberg-type superconductivity enhancement effects in a two-band superconductor MgB2 driven by narrow-band THz pulses

We study THz-driven condensate dynamics in epitaxial thin films of MgB$_{2}$, a prototype two-band superconductor (SC) with weak interband coupling. The temperature and excitation density dependent dynamics follow the behavior predicted by the phenomenological bottleneck model for the single-gap SC, implying adiabatic coupling between the two condensates on the ps timescale. The amplitude of the THz-driven suppression of condensate density reveals an unexpected decrease in pair-breaking efficiency with increasing temperature - unlike in the case of optical excitation. The reduced pair-breaking efficiency of narrow-band THz pulses, displaying minimum near $\approx0.7$ T$_{c}$, is attributed to THz-driven, long-lived, non-thermal quasiparticle distribution, resulting in Eliashberg-type enhancement of superconductivity, competing with pair-breaking.

cond-mat.supr-con↗

arXiv2023

Ultrafast Relaxation Dynamics of Spin-Density Wave Order in BaFe$_2$As$_2$ under High Pressures

BaFe$_2$As$_2$ is the parent compound for a family of iron-based high-temperature superconductors as well as a prototypical example of the spin-density wave (SDW) system. In this study, we perform an optical pump-probe study of this compound to systematically investigate the SDW order across the pressure-temperature phase diagram. The suppression of the SDW order by pressure manifests itself by the increase of relaxation time together with the decrease of the pump-probe signal and the pump energy necessary for complete vaporization of the SDW condensate. We have found that the pressure-driven suppression of the SDW order at low temperature occurs gradually in contrast to the thermally-induced SDW transition. Our results suggest that the pressure-driven quantum phase transition in BaFe$_2$As$_2$ (and probably other iron pnictides) is continuous and it is caused by the gradual worsening of the Fermi-surface nesting conditions.

cond-mat.supr-con↗

arXiv2022

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.

cond-mat.mtrl-sci↗

arXiv2022

Selective coupling of coherent optical phonons in YBa$_2$Cu$_3$O$_{7-\delta}$ with electronic transitions

We investigate coherent lattice dynamics in optimally doped YBa$_2$Cu$_3$O$_{7-\delta}$ driven by ultrashort ($\sim$ 12 fs) near infrared (NIR) and near ultraviolet (NUV) pulses. Transient reflectivity experiments, performed at room temperature and under moderate ($<$0.1 mJ/cm$^2$) excitation fluence, reveal $A_g$-symmetry phonon modes related to the O(2,3) bending in the CuO$_2$ planes and to the apical O(4) stretching at frequencies between 10 and 15 THz, in addition to the previously reported Ba and Cu(2) vibrations at 3.5 and 4.5 THz. The relative coherent phonon amplitudes are in stark contrast to the relative phonon intensities in the spontaneous Raman scattering spectrum excited at the same wavelength. This contrast indicates mode-dependent contributions of the Raman and non-Raman mechanisms to the coherent phonon generation. We show that the particularly intense coherent Cu(2) phonon, together with its initial phase, supports its generation predominately via a displacive mechanism, possibly involving the charge transfer within the CuO$_2$ planes. The small amplitude of the coherent out-of-phase O(2,3) bending mode at 10 THz also suggests the involvement of non-Raman generation mechanism. The generation of the other coherent phonons can in principle be explained within the framework of Raman mechanism. When the pump light has the polarization component perpendicular to the CuO$_2$ plane, the coherent O(4) mode at 15 THz is strongly enhanced compared to the in-plane excitation, corresponding to the large polarizability component associated with the hopping between the apical and the chain oxygens, O(4) and O(1).

cond-mat.mtrl-sci↗

arXiv2022

Terahertz control of photoluminescence emission in few-layer InSe

A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe using picosecond terahertz pulses. We observe a strong PL quenching (up to 50%) after the arrival of the terahertz pulse followed by a reversible recovery of the emission on the time scale of 50ps at T =10K. Microscopic calculations reveal that the origin of the photoluminescence quenching is the terahertz absorption by photo-excited carriers: this leads to a heating of the carriers and a broadening of their distribution, which reduces the probability of bimolecular electron-hole recombination and, therefore, the luminescence. By numerically evaluating the Boltzmann equation, we are able to clarify the individual roles of optical and acoustic phonons in the subsequent cooling process. The same PL quenchingmechanismis expected in other van derWaals semiconductors and the effectwill be particularly strong for materials with low carrier masses and long carrier relaxation time, which is the case for InSe. This work gives a solid background for the development of opto-electronic applications based on InSe, such as THz detectors and optical modulators.

cond-mat.mtrl-sci↗

arXiv2021

Optical Kerr nonlinearity and multi-photon absorption of DSTMS measured by Z-scan method

We investigate the optical Kerr nonlinearity and multi-photon absorption (MPA) properties of DSTMS excited by femtosecond pulses at a wavelengths of 1.43 μm, which is optimal for terahertz generation via difference frequency mixing. The MPA and the optical Kerr coefficients of DSTMS at 1.43 μm are strongly anisotropic indicating a dominating contribution from cascaded 2nd-order nonlinearity. These results suggest that the saturation of the THz generation efficiency is mainly related to the MPA process and to a spectral broadening caused by cascaded 2nd-order frequency mixing within DSTMS

physics.optics↗

arXiv2020

Nonlinear Charge Transport in InGaAs Nanowires at Terahertz Frequencies

We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump / THz probe spectroscopy with broadband THz pulses and peak electric fields up to 0.6 MV/cm. The plasmon resonance of the photoexcited charge carriers exhibits a systematic redshift and a suppression of its spectral weight for THz driving fields exceeding 0.4 MV/cm. This behavior is attributed to the intervalley electron scattering resulting in the increase of the average electron effective mass and the corresponding decrease of the electron mobility by about 2 times at the highest fields. We demonstrate that the increase of the effective mass is non-uniform along the nanowires and takes place mainly in their middle part, leading to a spatially inhomogeneous carrier response. Our results quantify the nonlinear transport regime in GaAs-based nanowires and show their high potential for development of nano-devices operating at THz frequencies.

cond-mat.mes-hall↗

arXiv2020

Photoluminescence dynamics in few-layer InSe

We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we discuss the relative weights of the exciton and electron-hole contributions. Thereafter we investigate the PL dynamics. Two contributions are distinguishable at low temperature: direct bandgap electron-hole and defect-assisted recombination. The two recombination processes have lifetime of $τ_1 \sim 8\;$ns and $τ_2 \sim 100\;$ns, respectively. The relative weights of the direct bandgap and defect-assisted contributions show a strong layer dependence due to the direct-to-indirect bandgap crossover. Electron-hole PL lifetime is limited by population transfer to lower-energy states and no dependence on the number of layers was observed. The lifetime of the defect-assisted recombination gets longer for thinner samples. Finally, we show that the PL lifetime decreases at high temperatures as a consequence of more efficient non-radiative recombinations.

cond-mat.mes-hall↗

arXiv2020

Up to 70 THz bandwidth from implanted Ge photoconductive antenna excited by a fibre laser

Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the upper frequency limit of photoconductive emitters - the most widespread technique in THz spectroscopy - reaches only up to 7 THz in regular transmission mode due to the absorption by infrared-active optical phonons. Here, we present ultra-broadband (extending up to 70 THz) THz emission from Au implanted Ge emitter which is compatible with a fibre laser operating at 1.1 and 1.55 μm wavelengths at a repetition rates of 10 and 20 MHz, respectively. This opens a perspective for the development of compact THz photonic devices operating up to multi-THz frequencies and compatible with Si CMOS technology.

physics.optics↗

arXiv2018

Non-thermal nature of photo-induced insulator-to-metal transition in NbO$_2$

We study the photo-induced metallization process in niobium dioxide NbO$_2$. This compound undergoes the thermal insulator-to-metal transition at the remarkably high temperature of 1080 K. Our optical pump - terahertz probe measurements reveal the ultrafast switching of the film on a sub-picosecond timescale and the formation of a metastable metallic phase when the incident pump fluence exceeds the threshold of 10 mJ/cm$^2$. Remarkably, this threshold value corresponds to the deposited energy which is capable of heating NbO$_2$ only up to 790 K, thus, evidencing the non-thermal character of the photo-induced insulator-to-metal transition. We also observe an enhanced formation of the metallic phase above the second threshold of 17.5 mJ/cm$^2$ which corresponds to the onset of the thermal switching. The transient optical conductivity in the metastable phase can be modeled using the Drude-Smith model confirming its metallic character. The present observation of non-thermal transition in NbO$_2$ can serve as an important test bed for understanding photo-induced phenomena in strongly correlated oxides.

cond-mat.str-el↗

arXiv2017

Ultrafast Carrier Dynamics in VO$_2$ across the Pressure-Induced Insulator-to-Metal Transition

We utilize near-infrared pump and mid-infrared probe spectroscopy to investigate the ultrafast electronic response of pressurized VO$_2$. Distinct pump-probe signals and a pumping threshold behavior are observed even in the pressure-induced metallic state showing a noticeable amount of localized electronic states. Our results are consistent with a scenario of a bandwidth-controlled Mott-Hubbard transition.

cond-mat.str-el↗