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Alexey Barinov

Publications and source records attributed to Alexey Barinov.

3 recordsLinked to original sources

Magnetically coupled charge-transport crossover and giant negative magnetoresistance in iodine-incorporated Cr$_2$Se$_3$

We report the synthesis and comprehensive investigation of iodine-incorporated $Cr_2Se_3$, a non-van der Waals quasi-two-dimensional magnetic material, using structural, magnetic, transport, spectroscopic, and first-principles methods. Magnetization and electron spin resonance measurements reveal an antiferromagnetically ordered state below $T_N \approx 52$ K. At higher temperatures, a second, broader anomaly emerges near $T^* \approx 150$ K, coinciding with a shallow minimum in the temperature-dependent resistivity that resembles a metal-to-insulator-like crossover. Hall measurements indicate predominantly hole-like conduction at high temperatures ($\geq$ 150 K), while the nonlinear Hall response below T*, together with an anomaly in the third-harmonic electrical signal, suggests the emergence of mobility-dependent multichannel and spatially inhomogeneous transport. A large, non-saturating negative magnetoresistance reaching approximately -78\% at 25 K and 12 T further demonstrates strong coupling between charge transport and the magnetic state. Temperature-dependent Raman spectroscopy reveals no symmetry-changing structural transition near T*, whereas angle resolved photoemission spectroscopy (ARPES) measurements show no major reconstruction of the electronic structure occupied across the crossover. Taken together, these results identify the high-temperature anomaly as a broad magnetically coupled transport crossover arising from the interplay of short-range magnetic correlations, chemical disorder, and redistribution among competing conduction channels. These findings demonstrate that anion incorporation provides an effective route to tuning the coupled electronic and magnetic properties of non-layered Cr$_2$Se$_3$, establishing this system as a promising platform for investigating correlated transport and emergent spintronic functionalities in transition-metal chalcogenides.

cond-mat.mtrl-sci

In-Plane Anisotropy-Driven Directional Charge Transport in van der Waals p-n Heterojunction

Low-symmetry two-dimensional (2D) van der Waals (vdW) materials enable anisotropic charge transport, crucial for polarization-sensitive optoelectronics. In this study, a $p$-GeS/$n$-MoS$_2$ heterostructure diode is investigated, where the anisotropic band dispersion of GeS, revealed by angle-resolved photoemission spectroscopy (ARPES), governs directional charge flow. Angle-resolved Raman spectroscopy confirms the crystallographic orientation, and transport measurements in GeS field-effect transistors (FETs) show a mobility anisotropy of $\sim 3.4$. The heterojunction exhibits orientation-dependent diode characteristics, anti-ambipolar transport, and a type-II band alignment, leading to anisotropic optoelectronic response. These findings establish a pathway for utilizing electronic anisotropy in vdW heterostructures for energy-efficient rectification.

cond-mat.mes-hall

On the floating of the topological surface state on top of a thick lead layer: The case of the Pb/Bi2Se3 interface

The puzzling question about the floating of the topological surface state on top of a thick Pb layer, has now possibly been answered. A study of the interface made by Pb on Bi2Se3 for different temperature and adsorbate coverage condition, allowed us to demonstrate that the evidence reported in the literature can be related to the surface diffusion phenomenon exhibited by the Pb atoms, which leaves the substrate partially uncovered. Comprehensive density functional theory calculations show that despite the specific arrangement of the atoms at the interface, the topological surface state cannot float on top of the adlayer but rather tends to move inward within the substrate.

cond-mat.mtrl-sci