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Alexey Blokhin

Publications and source records attributed to Alexey Blokhin.

3 recordsLinked to original sources

Telecom C-band single-photon sources with a semiconductor-dielectric microresonator

Secure communications with quantum key distribution over fiber-optic links is one of the few recognized applications of quantum physics at the level of individual quanta -- single C-band photons. Currently, the widely used sources of such photons are highly attenuated laser pulses, featured by a low probability of single photon occurrence. Here, we present an efficient source with an InAs/GaAs quantum dot on a metamorphic buffer layer inside a micropillar-shaped microcavity. The key innovation is the use of different semiconductor and dielectric materials to form the lower (GaAs/AlGaAs) and upper (Si/SiO$_2$) Bragg reflectors. Compatibility of these materials in a monolithic source is achieved by depositing a small amount of Si/SiO$_2$ pairs on an incomplete micropillar made from a coherent heterostructure grown by molecular beam epitaxy. This design enables resonant excitation with $π$-pulses and generation of polarized photons with a record-breaking end-to-end efficiency of 11%.

cond-mat.mes-hall

Advanced micropillar cavities: room-temperature operation of microlasers

High-quality micropillar cavities were grown using molecular-beam epitaxy. Stable continuous-wave lasing at room-temperature was demonstrated for microlasers with semiconductor and hybrid output mirrors. At 300 K, single-mode lasing was demonstrated for micropillars with a diameter of 5 $μ$m at a wavelength of 960 nm, with a minimum lasing threshold of 1.2 mW and a bare quality-factor exceeding 8000.

physics.optics

Lasing of Quantum-Dot Micropillar Lasers under Elevated Temperatures

A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (~65000 for 5 $μ$m pillar) due to better vertical mode confinement. The minimum laser threshold (~370 $μ$W for 5 $μ$m pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.

cond-mat.mes-hall