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Alexey I. Berdyugin

Publications and source records attributed to Alexey I. Berdyugin.

12 recordsLinked to original sources

Displacement-Field-Induced Ionization of Defect States in High-Quality hBN

Encapsulation of two-dimensional (2D) materials with hexagonal boron nitride (hBN) is widely used to fabricate ultraclean van der Waals (vdW) heterostructures for optoelectronic and quantum transport studies. These devices are often operated under strong out-of-plane displacement fields that tune the electronic properties of the active 2D material, while the surrounding hBN is typically assumed to remain electronically inert. This assumption, however, neglects defect states that are present even in high-quality hBN crystals. Here, we probe their response to the applied displacement field using monolayer graphene encapsulated between hBN crystals as a sensitive charge sensor. Increasing the displacement field induces notable charge transfer between graphene and hBN, producing additional electron doping of 10-20x10^9 cm^(-2) even at the moderate displacement field (~0.5 V nm^(-1)), while simultaneously increasing carrier-density inhomogeneity of the graphene layer. Both effects are consistent with ionization of defect states within the hBN bandgap, with the bulk density ~1-7x10^(-5) nm^(-3) varying across different hBN crystals. Our results show that displacement-field-induced defect ionization in hBN can modify the electronic response of vdW heterostructures, with direct implications for device design and interpretation of experiments.

cond-mat.mes-hall↗

Ultra-small-angle graphene twistronics with monolayer spacers: From interlayer hybridisation and moiré effects to high-temperature magnetotransport oscillations

Based on the analysis of moiré superlattice characteristics and interlayer hybridisation in small-angle twisted graphene multilayers with a monolayer hexagonal boron nitride (hBN) spacer, we predict spectral features and quantum transport effects in these systems. Here, we consider both a twisted bilayer and double bilayers with a spacer, discuss double bilayers in two stacking orders - with and without inversion symmetry - and also compare the results obtained with self-consistent Hartree calculations with and without in-plane periodic charge distribution, offering computationally efficient models for these graphene/hBN/graphene moiré systems. We note parametric intervals where the appearance of minibands can be enhanced by tuning with an out-of-plane displacement field, and identify the miniband edges and van Hove singularities across a broad range of densities and displacement fields. These system host Lifshitz transitions at which the Fermi lines form a network across moiré Brillouin zones, and to which Brown-Zak oscillations converge at low magnetic field and elevated temperatures. We analyse interlayer hybridisation across the same parameter space, discuss how hybridisation affects in-plane magneto-transport in ultra-high-mobility structures, and predict that semiclassical magneto-oscillations of interlayer hybridisation can lead to 1/B-periodic quantum oscillations of resistivity persistent to high temperature.

cond-mat.mes-hall↗

Towards on-chip nascent all-van-der-Waals polarization optical components for nanoscale photonic applications

The integration of polarization-control elements into nanoscale photonic circuits remains a central challenge for modern on-chip optical technologies, which call for continuous miniaturization. Van der Waals (vdW) crystals provide a versatile platform for the creation of such components owing to their strong optical anisotropy, high-refractive indices and atomically precise heterostructure assembly capabilities. In this work, we demonstrate an approach towards the creation of all-vdW on-chip polarization optical components, exemplified with quarter-wave plates operating in the near-infrared (NIR) spectral region, realized in specifically twisted ReSe2/alpha-MoO3 vdW heterostructures on a Si/SiO2 platform. Here, low-symmetry ReSe2 layer serves as a source of exceptionally high linearly polarized excitonic emission, whereas in-plane birefringent alpha-MoO_3 provides polarization-state conversion. Furthermore, our finite-difference time-domain (FDTD) simulations quantitatively reproduce the experimental observations with high accuracy revealing the critical roles of layer thicknesses, twist-angle, Fabry-Perot interference and emitter distribution effects in the determination of polarization conversion efficiency, which yields up to 95 % degrees of circular polarization (DoCP) for the optimized parametrization. Our findings establish a practical route towards fully integrated all-vdW polarization optical components, providing a foundation for nanoscale photonic architectures based entirely on layered materials.

physics.optics↗

Coulomb screening of superconductivity in magic-angle twisted bilayer graphene

The origin of superconductivity in magic-angle twisted bilayer graphene has been a subject of intense debate. While some experimental evidence indicated an unconventional pairing mechanism, efforts to tune the critical temperature by screening the Coulomb interactions have been unsuccessful, possibly indicating a conventional phonon-mediated pairing. Here we study a double-layer electronic system consisting of two twisted graphene bilayers in immediate proximity of each other but remaining electronically decoupled. By increasing the carrier density in one bilayer, we completely suppressed both the superconductivity and the correlated-insulator state in the adjacent magic-angle graphene. The observation of such a screening effect offers strong support for an unconventional mechanism of Cooper pairing in magic-angle twisted bilayer graphene, shedding new light on the underlying physics governing their properties.

cond-mat.mes-hall↗

Polymer-free van der Waals assembly of 2D material heterostructures using muscovite crystals

The advent of van der Waals (vdW) heterostructures has enabled formation of bespoke materials with atomic precision, where numerous quantum and topological phenomena have already been discovered. This atomic-layer tunability, however, comes at a cost: individual 2D layers must be picked up, moved, and placed in a deterministic manner while keeping their interfaces atomically clean. Recent advances in machine learning and robotics place even stronger emphasis on the deterministic aspect of vdW assembly. Current polymer-based transfer methods satisfy neither the determinism nor cleanliness requirements. To this end, solutions are needed where adhesion can be dynamically and deterministically controlled without leaving organic contamination. Here, we present a polymer free transfer technique employing thin muscovite (mica) crystals. Temperature control over mica adhesion enables deterministic pick-up, stacking, and release of 2D materials, while their crystalline, inorganic nature ensures pristine interfaces and suppresses strain. Fully compatible with existing fabrication workflows, this approach enables the assembly of demanding vdW heterostructures, including those with exposed conductive layers, moiré superlattices and suspended membranes. Our method represents a promising strategy for vdW heterostructure fabrication toward its automatization.

cond-mat.mes-hall↗

Proximity screening greatly enhances electronic quality of graphene

The electronic quality of two-dimensional systems is crucial when exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded record-quality two-dimensional gases with transport and quantum mobilities reaching close to 10$^8$ and 10$^6$ cm$^2$/Vs, respectively. Although the quality of graphene devices has also been improving, it remains comparatively lower. Here we report a transformative improvement in the electronic quality of graphene by employing graphite gates placed in its immediate proximity, at 1 nm separation. The resulting screening reduces charge inhomogeneity by two orders of magnitude, bringing it down to a few 10$^7$ cm$^-2$ and limiting potential fluctuations to less than 1 meV. Quantum mobilities reach 10$^7$ cm$^2$/Vs, surpassing those in the highest-quality semiconductor heterostructures by an order of magnitude, and the transport mobilities match their record. This quality enables Shubnikov-de Haas oscillations in fields as low as 1 mT and quantum Hall plateaus below 5 mT. Although proximity screening predictably suppresses electron-electron interactions, fractional quantum Hall states remain observable with their energy gaps reduced only by a factor of 3-5 compared to unscreened devices, demonstrating that many-body phenomena at spatial scales shorter than 10 nm remain robust. Our results offer a reliable route to improving electronic quality in graphene and other two-dimensional systems, which should facilitate the exploration of new physics previously obscured by disorder.

cond-mat.mes-hall↗

Giant magnetoresistance of Dirac plasma in high-mobility graphene

The most recognizable feature of graphene's electronic spectrum is its Dirac point around which interesting phenomena tend to cluster. At low temperatures, the intrinsic behavior in this regime is often obscured by charge inhomogeneity but thermal excitations can overcome the disorder at elevated temperatures and create electron-hole plasma of Dirac fermions. The Dirac plasma has been found to exhibit unusual properties including quantum critical scattering and hydrodynamic flow. However, little is known about the plasma's behavior in magnetic fields. Here we report magnetotransport in this quantum-critical regime. In low fields, the plasma exhibits giant parabolic magnetoresistivity reaching >100% in 0.1 T even at room temperature. This is orders of magnitude higher than magnetoresistivity found in any other system at such temperatures. We show that this behavior is unique to monolayer graphene, being underpinned by its massless spectrum and ultrahigh mobility, despite frequent (Planckian-limit) scattering. With the onset of Landau quantization in a few T, where the electron-hole plasma resides entirely on the zeroth Landau level, giant linear magnetoresistivity emerges. It is nearly independent of temperature and can be suppressed by proximity screening, indicating a many-body origin. Clear parallels with magnetotransport in strange metals and so-called quantum linear magnetoresistance predicted for Weyl metals offer an interesting playground to further explore relevant physics using this well-defined quantum-critical 2D system.

cond-mat.mes-hall↗

Scanning SQUID-on-tip microscope in a top-loading cryogen-free dilution refrigerator

The scanning superconducting quantum interference device (SQUID) fabricated on the tip of a sharp quartz pipette (SQUID-on-tip) has emerged as a versatile tool for nanoscale imaging of magnetic, thermal, and transport properties of microscopic devices of quantum materials. We present the design and performance of a scanning SQUID-on-tip microscope in a top-loading probe of a cryogen-free dilution refrigerator. The microscope is enclosed in a custom-made vacuum-tight cell mounted at the bottom of the probe and is suspended by springs to suppress vibrations caused by the pulse tube cryocooler. Two capillaries allow in-situ control of helium exchange gas pressure in the cell that is required for thermal imaging. A nanoscale heater is used to create local temperature gradients in the sample, which enables quantitative characterization of the relative vibrations between the tip and the sample. The spectrum of the vibrations shows distinct resonant peaks with maximal power density of about 27 nm/Hz$^{1/2}$ in the in-plane direction. The performance of the SQUID-on-tip microscope is demonstrated by magnetic imaging of the MnBi$_2$Te$_4$ magnetic topological insulator, magnetization and current distribution imaging in a SrRuO$_3$ ferromagnetic oxide thin film, and by thermal imaging of dissipation in graphene.

cond-mat.mes-hall↗

Out-of-equilibrium criticalities in graphene superlattices

In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices.

cond-mat.other↗

Out-of-plane dielectric susceptibility of graphene in twistronic and Bernal bilayers

We describe how the out-of-plane dielectric polarizability of monolayer graphene influences the electrostatics of bilayer graphene -- both Bernal (BLG) and twisted (tBLG). We compare the polarizability value computed using density functional theory with the output from previously published experimental data on the electrostatically controlled interlayer asymmetry potential in BLG and data on the on-layer density distribution in tBLG. We show that monolayers in tBLG are described well by polarizability $α_{exp} = 10.8 \unicode{x212B}^3$ and effective out-of-plane dielectric susceptibility $ε_z = 2.5$, including their on-layer electron density distribution at zero magnetic field and the inter-layer Landau level pinning at quantizing magnetic fields.

cond-mat.mes-hall↗

Magnetization signature of topological surface states in a non-symmorphic superconductor

Superconductors with nontrivial band structure topology represent a class of materials with unconventional and potentially useful properties. Recent years have seen much success in creating artificial hybrid structures exhibiting main characteristics of two-dimensional (2D) topological superconductors. Yet, bulk materials known to combine inherent superconductivity with nontrivial topology remain scarce, largely because distinguishing their central characteristic -- topological surface states -- proved challenging due to a dominant contribution from the superconducting bulk. Reported here is a highly anomalous behaviour of surface superconductivity in topologically nontrivial 3D superconductor In2Bi where the surface states result from its nontrivial band structure, which itself is a consequence of the non-symmorphic crystal symmetry and strong spin-orbit coupling. In contrast to smoothly decreasing diamagnetic susceptibility above the bulk critical field Hc2, associated with surface superconductivity in conventional superconductors, we observe near-perfect, Meissner-like screening of low-frequency magnetic fields well above Hc2. The enhanced diamagnetism disappears at a new phase transition close to the critical field of surface superconductivity Hc3. Using theoretical modelling, we show that the anomalous screening is consistent with modification of surface superconductivity due to the presence of topological surface states. The demonstrated possibility to detect signatures of the surface states using macroscopic magnetization measurements provides an important new tool for discovery and identification of topological superconductors.

cond-mat.supr-con↗

Fluidity Onset in Graphene

Viscous electron fluids have emerged recently as a new paradigm of strongly-correlated electron transport in solids. Here we report on a direct observation of the transition to this long-sought-for state of matter in a high-mobility electron system in graphene. Unexpectedly, the electron flow is found to be interaction-dominated but non-hydrodynamic (quasiballistic) in a wide temperature range, showing signatures of viscous flows only at relatively high temperatures. The transition between the two regimes is characterized by a sharp maximum of negative resistance, probed in proximity to the current injector. The resistance decreases as the system goes deeper into the hydrodynamic regime. In a perfect darkness-before-daybreak manner, the interaction-dominated negative response is strongest at the transition to the quasiballistic regime. Our work provides the first demonstration of how the viscous fluid behavior emerges in an interacting electron system.

cond-mat.mes-hall↗