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Alexey Toropov

Publications and source records attributed to Alexey Toropov.

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Hidden anisotropy controls spin-photon entanglement in a charged quantum dot

Photon entanglement is indispensable for optical quantum technologies. Measurement-based optical quantum computing and all-optical quantum networks rely on multiphoton cluster states consisting of indistinguishable entangled photons. A promising method for creating such cluster states on demand is spin-photon entanglement using the spin of a resident charge carrier in a quantum dot, precessing in a weak external magnetic field. In this work, we show theoretically and experimentally that spin-photon entanglement is strongly affected by the hidden anisotropy of quantum dots, which can arise from mechanical stress, shape anisotropy and even specific crystal structure. In the measurements of time-resolved photoluminescence and cross-polarized second-order photon correlation function in a magnetic field, the anisotropy manifests itself in the spin dynamics and, as a consequence, in the spin-photon concurrence. The measured time-filtered spin-photon Bell state fidelity depends strongly on the excitation polarization and reaches an extremely high value of 94% at maximum. We specify the magnetic field and excitation polarization directions that maximize spin-photon entanglement and thereby enhance the fidelity of multiphoton entangled states.

cond-mat.mes-hall

Allotropic Ga$_2$Se$_3$/GaSe nanostructures grown by van der Waals epitaxy: Narrow exciton lines and single-photon emission

The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenides and other layered crystals in quantum technology to create non-classical light. Currently, the main method of their formation is exfoliation followed by strain and defect engineering. A factor limiting the use of epitaxy is the presence of different phases in the grown films. In this work, we show that control over their formation makes it possible to create structures with the desired properties. We propose Ga$_2$Se$_3$/GaSe nanostructures by van der Waals epitaxy with a high VI/III flux ratio as a source of narrow exciton lines. Actually, these nanostructures are a combination of allotropes: GaSe and Ga$_2$Se$_3$, consisting of the same atoms in different arrangements. The energy position of the narrow lines is determined by the quantum confinement in Ga$_2$Se$_3$ inclusions of different sizes in the GaSe matrix, similar to quantum dots, and their linear polarization is due to the ordering of Ga vacancies in a certain crystalline direction in Ga$_2$Se$_3$. Such nanostructures exhibit single-photon emission with second-order correlation function $g^{(2)}(0)\sim$0.1 at 10 K that makes them promising for quantum technologies.

cond-mat.mes-hall