Ali Gholinia | Searcharxiv

arXiv2026

Towards standardisation of average grain size measurement of additively manufactured microstructures using EBSD

Additively manufactured (AM) alloys have heterogeneous microstructures with broad grain size distributions and highly anisotropic and/or non-convex grain shapes. AM components can have complex geometries and porosity which may affect the local microstructure. Currently there is no electron backscatter diffraction (EBSD)-based grain size measurement standard suitable for typical AM materials. An interlaboratory comparison study was conducted to find out what grain size metrics and summary statistics are currently used to describe average grain size. Participants were asked to measure and report the average grain size from the same EBSD map dataset. Detailed reports have been published in Reference [1]. Based on these results, we have tested and propose recommendations for a new standard for measuring average grain size in AM materials. The present work demonstrates the suitability and limitations of the proposal across several different Ni and Al AM components.

physics.app-ph↗

arXiv2012

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates.

cond-mat.mes-hall↗