arXiv subjects

Alireza Saffarzadeh

Publications and source records attributed to Alireza Saffarzadeh.

At least 37 records · Page 2Linked to original sources

arXiv2013

Voltage-controlled spin injection with an endohedral fullerene CoC$_{60}$ dimer

Spin-dependent transport through an endohedral fullerene Co@C$_{60}$ dimer with gold electrodes is explored theoretically using density functional and extended Hückel theory. Density of states spin polarizations up to 95%, due to spin-splitting of Co 3d orbitals, are found by varying the gate and/or bias voltage. The current-voltage characteristics and strong (up to 100%) spin polarization of the current indicate that the device can be utilized for highly efficient spin injection into nonmagnetic conductors. This finding opens the way to the realization of electrostatically tuned spintronic nano devices less than 2 nanometers in size, without ferromagnetic electrodes.

cond-mat.mes-hall↗

arXiv2012

Scanning tunneling spectroscopy and Dirac point resonances due to a single Co adatom on gated graphene

Based on the standard tight-binding model of the graphene $π$-band electronic structure, the extended Hückel model for the adsorbate and graphene carbon atoms, and spin splittings estimated from density functional theory (DFT), the Dirac point resonances due to a single cobalt atom on graphene are studied. The relaxed geometry of the magnetic adsorbate and the graphene is calculated using DFT. The system shows strong spin polarization in the vicinity of the graphene Dirac point energy for all values of the gate voltage, due to the spin-splitting of Co 3d orbitals. We also model the differential conductance spectra for this system that have been measured in the scanning tunneling microscopy (STM) experiments of Brar {\em et al.} [Nat. Phys. {\bf 7}, 43 (2011)]. We interpret the experimentally observed behavior of the S-peak in the STM differential conductance spectrum as evidence of tunneling between the STM tip and a cobalt-induced Dirac point resonant state of the graphene, via a Co 3d orbital. The cobalt ionization state which is determined by the energy position of the resonance can be tuned by gate voltage, similar to that seen in the experiment.

cond-mat.mes-hall↗

arXiv2012

Electronic and optical spectra in a diluted magnetic semiconductor multilayer

The effects of random distribution of magnetic impurities with concentration $x$ in a semiconductor alloy multilayer at a paramagnetic temperature are investigated by means of coherent potential approximation and tight-binding model. The change in the electronic states and the optical absorption spectrum with $x$ is calculated for weak and strong exchange interactions between carrier spins and localized spin moments on magnetic ions. We find that the density of states and optical absorption are strongly layer-dependent due to the quantum size effects. The electronic and optical spectra are broadened due to the spin fluctuations of magnetic ions and in the case of strong exchange interaction, an energy gap appears in both spectra. Furthermore, the interior layers show higher contribution in the optical absorption of the system. The results can be helpful for magneto-optical devices at a paramagnetic temperature.

cond-mat.mes-hall↗

arXiv2010

Optical absorption spectrum in disordered semiconductor multilayers

The effects of chemical disorder on the electronic and optical properties of semiconductor alloy multilayers are studied based on the tight-binding theory and single-site coherent potential approximation. Due to the quantum confinement of the system, the electronic spectrum breaks into a set of subbands and the electronic density of states and hence the optical absorption spectrum become layer-dependent. We find that, the values of absorption depend on the alloy concentration, the strength of disorder, and the layer number. The absorption spectrum in all layers is broadened because of the influence of disorder and in the case of strong disorder regime, two optical absorption bands appear. In the process of absorption, most of the photon energy is absorbed by the interior layers of the system. The results may be useful for the development of optoelectronic nanodevices.

cond-mat.mes-hall↗

arXiv2010

Modeling of gas adsorption on graphene nanoribbons

We present a theory to study gas molecules adsorption on armchair graphene nanoribbons (AGNRs) by applying the results of \emph{ab} \emph{initio} calculations to the single-band tight-binding approximation. In addition, the effect of edge states on the electronic properties of AGNR is included in the calculations. Under the assumption that the gas molecules adsorb on the ribbon sites with uniform probability distribution, the applicability of the method is examined for finite concentrations of adsorption of several simple gas molecules (CO, NO, CO$_2$, NH$_3$) on 10-AGNR. We show that the states contributed by the adsorbed CO and NO molecules are quite localized near the center of original band gap and suggest that the charge transport in such systems cannot be enhanced considerably, while CO$_2$ and NH$_3$ molecules adsorption acts as acceptor and donor, respectively. The results of this theory at low gas concentration are in good agreement with those obtained by density-functional theory calculations.

cond-mat.mes-hall↗

arXiv2009

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to the difference in the thickness of the nonmagnetic layers. It is found that the structural asymmetry can greatly affect the traversal time and the spin polarization of the electrons tunneling through the magnetic RTD. The results indicate that, by choosing suitable values for the thickness of the layers, one can design a high speed and perfect spin-filter diode.

cond-mat.mes-hall↗

arXiv2009

Spin currents and magnetoresistance of graphene-based magnetic junctions

Using the tight-binding approximation and the nonequilibrium Green's function approach, we investigate the coherent spin-dependent transport in planar magnetic junctions consisting of two ferromagnetic (FM) electrodes separated by a graphene flake (GF) with zigzag or armchair interfaces. It is found that the electron conduction strongly depends on the geometry of contact between the GF and the FM electrodes. In the case of zigzag interfaces, the junction demonstrates a spin-valve effect with high magnetoresistance (MR) ratios and shows negative differential resistance features for a single spin channel at positive gate voltage. In the case of armchair interfaces, the current-voltage characteristics behave linearly at low bias voltages and hence, both spin channels are in on state with low MR ratios.

cond-mat.mes-hall↗

arXiv2008

Tunnel Magnetoresistance of a Single-Molecule Junction

Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-Büttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic electrodes with finite cross sections, is investigated. By studying the coherent spin-dependent transport through the energy levels of the molecule, it is shown that the tunnel magnetoresistance (TMR) of the molecular junction depends on the applied voltages and the number of contact points between the device electrodes and the molecule. The TMR values more than 60% are obtained by adjusting the related parameters.

cond-mat.mes-hall↗

arXiv2008

Exchange coupling between two ferromagnetic electrodes separated by a graphene nanoribbon

In this study, based on the self-energy method and the total energy calculation, the indirect exchange coupling between two semi-infinite ferromagnetic strips (FM electrodes) separated by metallic graphene nanoribbons (GNRs) is investigated. In order to form a FM/GNR/FM junction, a graphitic region of finite length is coupled to the FM electrodes along graphitic zigzag or armchair interfaces of width $N$. The numerical results show that, the exchange coupling strength which can be obtained from the difference between the total energies of electrons in the ferromagnetic and antiferromagnetic couplings, has an oscillatory behavior, and depends on the Fermi energy and the length of the central region.

cond-mat.mes-hall↗

arXiv2008

Electronic transport through a C$_{60}$ molecular bridge: The role of single and multiple contacts

The effects of different contact geometries, bond dimerization, and gate voltage on quantum transport through a C$_{60}$ molecule are studied by the Landauer-Büttiker formula based on the Green's function technique. It is shown that the number of contact points between the device electrodes and the molecule can play an important role in the electron conduction. The transmission is due to the resonant tunneling when the electrodes are contacted to one carbon atom of the molecule. In the case of multiple contacts, the interference effects are responsible for the change of the transmission through the C$_{60}$. The bond dimerization and a gate voltage shift the molecular levels and by adjusting the related parameters the electron conduction can be controlled.

cond-mat.mes-hall↗

arXiv2008

Chemical and magnetic impurity effects on electronic properties of semiconductor quantum wires

We present a theoretical study of electronic states in magnetic and nonmagnetic semiconductor quantum wires. The effects of chemical and magnetic disorder at paramagnetic temperatures are investigated in single-site coherent potential approximation. It is shown that the nonmagnetic impurity shifts the band of carriers and suppresses the van Hove singularities of the local density of states (LDOS) depending on the value of impurity concentration. The magnetic impurity, however, broadens the band which depends on the strength of exchange coupling, and in the high impurity concentration, the van Hove singularities in the LDOS can completely disappear and the curves become smooth.

cond-mat.dis-nn↗

arXiv2007

Temperature dependence of surface magnetization in local-moment systems

We present a theory to study the temperature-dependent behavior of surface states in a ferromagnetic semi-infinite crystal. Our approach is based on the single-site approximation for the \emph{s-f} model. The effect of the semi-infinite nature of the crystal is taken into account by a localized perturbation method. Using the mean-field theory for the layer-dependent magnetization, the local density of states and the electron-spin polarization are investigated at different temperatures for ordinary and surface transition cases. The results show that the surface magnetic properties may differ strongly from those in the bulk and the coupling constant of atoms plays a decisive role in the degree of spin polarization. In particular, for the case in which the exchange coupling constant on the surface and between atoms in the first and second layer is higher than the corresponding in the bulk, an enhancement of surface Curie temperature and hence the spin polarization can be obtained.

cond-mat.dis-nn↗

arXiv2006

Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures

Using a quantum theory including spin-splitting effect in diluted magnetic semiconductors, we study the dependence of tunneling magnetoresistance (TMR) on barrier thickness, temperature and applied voltage in GaMnAs/GaAs/GaMnAs heterostructures. TMR ratios more than 65% are obtained at zero temperature, when one GaAs monolayer ($\approx$ 0.565 nm) is used as a tunnel barrier. It is also shown that the TMR ratio decreases rapidly with increasing the barrier thickness and applied voltage, however at high voltages and low thicknesses, the TMR first increases and then decreases. Our model calculations well explain the main features of the recent experimental observations.

cond-mat.mes-hall↗

arXiv2006

The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures

We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band offset based on the experimental data, we found that the spin current densities strongly depend on the Mn concentration. The magnitude as well as the sign of the electron-spin polarization and the tunnel magnetoresistance can be tuned by varying the Mn concentration, the width of the paramagnetic layer, and the external magnetic field. By an appropriate choice of the Mn concentration and the width of the paramagnetic layer, the degree of spin polarization for the output current can reach 100% and the device can be used as a spin filter.

cond-mat.mes-hall↗

arXiv2005

Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer

The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic (NM) metallic spacer. The effect of spin fluctuation in magnetic barrier, which plays an important role at finite temperature, is included by taking the mean-field approximation. It is found that, the tunnel magnetoresistance (TMR) and the electron-spin polarization depend strongly on the temperature and the applied voltage. The TMR and spin polarization at different temperatures show an oscillatory behavior as a function of the NM spacer thickness. Also, the amplitude of these oscillations is regularly reduced when the temperature increases. The maximum TMR value, varies approximately from 270% in reverse bias (at $T$=0 K) to 25% in forward bias (at $T\geq T_C$).

cond-mat.mes-hall↗

arXiv2004

The effects of a magnetic barrier and a nonmagnetic spacer in tunnel structures

The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and the nearly-free-electron-approximation the dependence of the tunnel magnetoresistance (TMR) and electron-spin polarization on the nonmagnetic layer thickness and the applied bias voltage are studied theoretically. The TMR and spin polarization show an oscillatory behavior as a function of the spacer thickness and the bias voltage. The oscillations originate from the quantum well states in the spacer, while the existence of the magnetic barrier gives rise to a strong spin polarization and high values of the TMR. Our results may be useful for the development of spin electronic devices based on coherent transport.

cond-mat.mes-hall↗

arXiv2003

Spin-filter magnetoresistance in magnetic barrier junctions

The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations are based on the transfer matrix method and the free-electron approximation. The numerical results show that the spin transport depends on the relative magnetization orientation of the FM electrode and the spin-filter barrier, such that the tunnel current reaches its maximum when the magnetic moments of the FM electrode and the magnetic barrier are parallel. It is also found that the TMR increases with increasing the applied voltage.

cond-mat.mes-hall↗

arXiv2003

Tunnel magnetoresistance in double spin filter junctions

We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices.

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