arXiv subjects

Alireza Taghizadeh

Publications and source records attributed to Alireza Taghizadeh.

14 recordsLinked to original sources

arXiv2024

GPAW: An open Python package for electronic-structure calculations

We review the GPAW open-source Python package for electronic structure calculations. GPAW is based on the projector-augmented wave method and can solve the self-consistent density functional theory (DFT) equations using three different wave-function representations, namely real-space grids, plane waves, and numerical atomic orbitals. The three representations are complementary and mutually independent and can be connected by transformations via the real-space grid. This multi-basis feature renders GPAW highly versatile and unique among similar codes. By virtue of its modular structure, the GPAW code constitutes an ideal platform for implementation of new features and methodologies. Moreover, it is well integrated with the Atomic Simulation Environment (ASE) providing a flexible and dynamic user interface. In addition to ground-state DFT calculations, GPAW supports many-body GW band structures, optical excitations from the Bethe-Salpeter Equation (BSE), variational calculations of excited states in molecules and solids via direct optimization, and real-time propagation of the Kohn-Sham equations within time-dependent DFT. A range of more advanced methods to describe magnetic excitations and non-collinear magnetism in solids are also now available. In addition, GPAW can calculate non-linear optical tensors of solids, charged crystal point defects, and much more. Recently, support of GPU acceleration has been achieved with minor modifications of the GPAW code thanks to the CuPy library. We end the review with an outlook describing some future plans for GPAW.

cond-mat.mtrl-sci↗

arXiv2023

Emergent properties of van der Waals bilayers revealed by computational stacking

Stacking of two-dimensional (2D) materials has emerged as a facile strategy for realising exotic quantum states of matter and engineering electronic properties. Yet, developments beyond the proof-of-principle level are impeded by the vast size of the configuration space defined by layer combinations and stacking orders. Here we employ a density functional theory (DFT) workflow to calculate interlayer binding energies of 8451 homobilayers created by stacking 1052 different monolayers in various configurations. Analysis of the stacking orders in 247 experimentally known van der Waals crystals is used to validate the workflow and determine the criteria for realizable bilayers. For the 2586 most stable bilayer systems, we calculate a range of electronic, magnetic, and vibrational properties, and explore general trends and anomalies. We identify an abundance of bistable bilayers with stacking order-dependent magnetic or electrical polarisation states making them candidates for slidetronics applications.

cond-mat.mtrl-sci↗

arXiv2022

Indirect band gap semiconductors for thin-film photovoltaics: High-throughput calculation of phonon-assisted absorption

Discovery of high-performance materials remains one of the most active areas in photovoltaics (PV) research. Indirect band gap materials form the largest part of the semiconductor chemical space, but predicting their suitability for PV applications from first principles calculations remains challenging. Here we propose a computationally efficient method to account for phonon assisted absorption across the indirect band gap and use it to screen 127 experimentally known binary semiconductors for their potential as thin film PV absorbers. Using screening descriptors for absorption, carrier transport, and nonradiative recombination, we identify 28 potential candidate materials. The list, which contains 20 indirect band gap semiconductors, comprises both well established (3), emerging (16), and previously unexplored (9) absorber materials. Most of the new compounds are anion rich chalcogenides (TiS$_3$, Ga$_2$Te$_5$) and phosphides (PdP$_2$, CdP$_4$, MgP$_4$, BaP$_3$) containing homoelemental bonds, and represent a new frontier in PV materials research. Our work highlights the previously underexplored potential of indirect band gap materials for optoelectronic thin-film technologies.

cond-mat.mtrl-sci↗

arXiv2020

Two-dimensional Materials with Giant Optical Nonlinearities Near the Theoretical Upper Limit

Nonlinear optical (NLO) phenomena such as harmonic generation, Kerr, and Pockels effects are of great technological importance for lasers, frequency converters, modulators, switches, etc. Recently, two-dimensional (2D) materials have drawn significant attention due to their strong and unique NLO properties. Here, we describe an efficient first-principles workflow for calculating the quadratic optical response and apply it to 375 non-centrosymmetric semiconductor monolayers from the Computational 2D Materials Database (C2DB). Sorting the non-resonant nonlinearities with respect to bandgap $E_g$ reveals an upper limit proportional to $E_g^{-4}$, which is neatly explained by two distinct generic models. We identify multiple promising candidates with giant nonlinearities and bandgaps ranging from 0.4 to 5 eV, some of which approach the theoretical upper limit and greatly outperform known materials. Our comprehensive library of ab initio NLO spectra for all 375 monolayers is freely available via the C2DB website. We expect this work to pave the way for highly efficient and compact opto-electronic devices based on 2D materials.

physics.optics↗

arXiv2019

Plasmons in ultra-thin gold slabs with quantum spill-out: Fourier modal method, perturbative approach, and analytical model

We numerically study the effect of the quantum spill-out (QSO) on the plasmon mode indices of an ultra-thin metallic slab, using the Fourier modal method (FMM). To improve the convergence of the FMM results, a novel nonlinear coordinate transformation is suggested and employed. Furthermore, we present a perturbative approach for incorporating the effects of QSO on the plasmon mode indices, which agrees very well with the full numerical results. The perturbative approach also provides additional physical insight, and is used to derive analytical expressions for the mode indices using a simple model for the dielectric function. The analytical expressions reproduce the results obtained from the numerically-challenging spill-out problem with much less effort and may be used for understanding the effects of QSO on other plasmonic structures.

physics.optics↗

arXiv2019

Nonlinear optical selection rules of excitons in monolayer transition metal dichalcogenides

We propose an analytical approach for calculating the linear and nonlinear optical (NLO) responses of monolayer transition metal dichalcogenides (TMDs) including excitonic effects. An effective Hamiltonian reproducing the trigonal warping (TW) of the energy dispersion, is used to derive analytical expressions for excitonic matrix elements. Based on this approach, we provide an informative diagram, which encompasses all excitonic selection rules. The diagram enables us to identify main transitions for the first-, second- and third-order optical responses. As a case study, we calculate the optical conductivity and second/third harmonic generation responses of monolayer MoS2 and demonstrate that the analytical approach accurately reproduces the spectra obtained using the Bethe-Salpeter equation (BSE). Therefore, the analytical approach provides an efficient and reliable method for calculating the NLO spectra as accurate as the full BSE method. Moreover, it enables us to obtain valuable physical insight into the fundamental transitions responsible for individual resonances, which is not straightforward in the full BSE method.

cond-mat.mes-hall↗

arXiv2018

Nonlinear excitonic spin Hall effect in monolayer transition metal dichalcogenides

We propose and analyze a mechanism for inducing spin Hall currents in ordinary (1H phase) monolayer transition metal dichalcogenides (TMDs) due to the nonlinear process of optical rectification. The photo-induced spin current is proportional to the light intensity, and originates from the intrinsic spin-orbit coupling in TMDs. The spin current spectrum is strongly influenced by electron-hole interactions, i.e. excitonic effects, analogous to the optical absorption. Remarkably, excitons change the temperature dependence of the induced spin current, to the point that the current direction can even be reversed by varying the temperature. This peculiar excitonic behavior is shown to emerge from the relative strength of two distinct mechanisms contributing to the optical response, i.e. a purely interband part and a mixed inter/intraband contribution. Furthermore, we investigate the valley dichrosim of second-harmonic charge and spin currents, and demonstrate different valley polarization of $s$ and $p$ excitons that stem from their distinct angular momenta. Our findings pave the path to the generation of dc spin currents in ordinary TMDs without external static electric or magnetic fields.

cond-mat.mes-hall↗

arXiv2018

Nonlinear optical response of doped mono- and bilayer graphene: length gauge tight-binding model

We compute the nonlinear optical response of doped mono- and bilayer graphene using the full dispersion based on tight-binding models. The response is derived with the density matrix formalism using the length gauge and is valid for any periodic system, with arbitrary doping. By collecting terms that define effective nonlinear response tensors, we identify all nonlinear Drude-like terms (up to third-order) and show that all additional spurious divergences present in the induced current vanish. The nonlinear response of graphene comprises a large Drude-like divergence and three resonances that are tightly connected with transitions occurring in the vicinity of the Fermi level. The analytic solution derived using the Dirac approximation captures accurately the first- and third-order responses in graphene, even at very high doping levels. The quadratic response of gapped graphene is also strongly enhanced by doping, even for systems with small gaps such as commensurate structures of graphene on SiC. The nonlinear response of bilayer graphene is significantly richer, combining the resonances that stem from doping with its intrinsic strong low-energy resonances.

cond-mat.mes-hall↗

arXiv2018

Gauge invariance of excitonic linear and nonlinear optical response

We study the equivalence of four different approaches to calculate the excitonic linear and nonlinear optical response of multiband semiconductors. These four methods derive from two choices of gauge, i.e. length and velocity gauges, and two ways of computing the current density, i.e. direct evaluation and evaluation via the time-derivative of the polarization density. The linear and quadratic response functions are obtained for all methods by employing a perturbative density matrix approach within the mean-field approximation. The equivalence of all four methods is shown rigorously, when a correct interaction Hamiltonian is employed for the velocity gauge approaches. The correct interaction is written as a series of commutators containing the unperturbed Hamiltonian and position operators, which becomes equivalent to the conventional velocity gauge interaction in the limit of infinite Coulomb screening and infinitely many bands. As a case study, the theory is applied to hexagonal boron nitride monolayers, and the linear and nonlinear optical response found in different approaches are compared.

cond-mat.mtrl-sci↗

arXiv2017

Linear and nonlinear optical response of crystals using length and velocity gauges: Effect of basis truncation

We study the effects of a truncated band structure on the linear and nonlinear optical response of crystals using four methods. These are constructed by (i) choosing either length or velocity gauge for the perturbation and (ii) computing the current density either directly or via the time-derivative of the polarization density. In the infinite band limit, the results of all four methods are identical, but basis truncation breaks their equivalence. In particular, certain response functions vanish identically and unphysical low-frequency divergences are observed for few-band models in the velocity gauge. Using hexagonal boron nitride (hBN) monolayer as a case study, we analyze the problems associated with all methods and identify the optimal one. Our results show that the length gauge calculations provide the fastest convergence rates as well as the most accurate spectra for any basis size and, moreover, that low-frequency divergences are eliminated.

physics.optics↗

arXiv2017

Quasi Bound States in the Continuum with Few Unit Cells of Photonic Crystal Slab

Bound states in the continuum (BICs) in photonic crystal slabs represent the resonances with an infinite quality(Q)-factor, occurring above the light line for an infinitely periodic structure. We show that a set of BICs can turn into quasi-BICs with a very high Q-factor even for two or three unit cell structures. They are explained by a viewpoint of BICs originating from the tight binding of individual resonances of each unit cell as in semiconductors. Combined with a reciprocal-space matching technique, the microcavities based on quasi-BICs can achieve a Q-factor as high as defect-based PhC microcavities. These results may enable experimental studies of BICs in a compact platform as well as realizing a new concept of high-Q mirrorless microcavities.

physics.optics↗

arXiv2016

Numerical Investigation of Vertical Cavity Lasers with Subwavelength Gratings Using the Fourier Modal Method

We show the strength of the Fourier modal method (FMM) for numerically investigating the optical properties of vertical cavities including subwavelength gratings. Three different techniques for determining the resonance frequency and Q-factor of a cavity mode are compared. Based on that, the Fabry-Perot approach has been chosen due to its numerical efficiency. The computational uncertainty in determining the resonance frequency and Q-factor is investigated, showing that the uncertainty in the Q-factor calculation can be a few orders of magnitude larger than that in the resonance frequency calculation. Moreover, a method for reducing 3D simulations to lower-dimensional simulations is suggested, and is shown to enable approximate and fast simulations of certain device parameters. Numerical calculation of the cavity dispersion, which is an important characteristic of vertical cavities, is illustrated. By employing the implemented FMM, it is shown that adiabatic heterostructures designs are advantageous compared to abrupt heterostructures for minimizing the cavity scattering loss.

physics.optics↗

arXiv2015

Vertical-Cavity In-plane Heterostructures: Physics and Applications

We show that the in-plane heterostructures realized in vertical cavities with high contrast grating(HCG) reflector enables exotic configurations of heterostructure and photonic wells. In photonic crystal heterostructures forming a photonic well, the property of a confined mode is determined by the well width and barrier height. We show that in vertical-cavity in-plane heterostructures, anisotropic dispersion curvatures plays a key role as well, leading to exotic effects such as a photonic well with conduction band like well and a valence band like barrier. We investigate three examples to discuss the rich potential of this heterostructure as a platform for various physics studies and propose a system of two laterally coupled cavities which shows the breaking of parity-time symmetry as an example.

physics.optics↗

arXiv2014

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS-compatible processes. It has the potential for ultrahigh-speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.

physics.optics↗