arXiv subjects

Alla Chikina

Publications and source records attributed to Alla Chikina.

12 recordsLinked to original sources

arXiv2023

Provoking topology by octahedral tilting in strained SrNbO$_3$

Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for developing future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattice distortions and octahedral rotation in SrNbO$_3$ films induce the band topology. By employing angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we verify the presence of in-phase $a^0a^0c^+$ octahedral rotation in ultra-thin SrNbO$_3$ films, which causes the formation of topologically-protected Dirac band crossings. Our study illustrates that octahedral engineering can be effectively exploited for implanting and controlling quantum topological phases in transition metal oxides.

cond-mat.mtrl-sci↗

arXiv2023

Octahedral distortions in SrNbO$_3$: Unraveling the structure-property relation

Strontium niobate has triggered a lot of interest as a transparent conductor and as a possible realization of a correlated Dirac semi-metal. Using the lattice parameters as a tunable knob, the energy landscape of octahedral tilting was mapped using density functional theory calculations. We find that biaxial compressive strain induces tilting around the out-of-plane axis, while tensile strain induces tilting around the two in-plane axes. The two competing distorted structures for compressive strain show semi-Dirac dispersions above the Fermi level in their electronic structure. Our density functional theory calculations combined with dynamical mean field theory (DFT+DMFT) reveals that dynamical correlations downshift these semi-Dirac like cones towards the Fermi energy. More generally, our study reveals that the competition between the in-phase and out-of-phase tilting in SrNbO$_3$ provides a new degree of freedom which allows for tuning the thermoelectric and optical properties. We show how the tilt angle and mode is reflected in the behavior of the Seebeck coefficient and the plasma frequency, due to changes in the band structure.

cond-mat.mtrl-sci↗

arXiv2023

Current driven insulator-to-metal transition without Mott breakdown in Ca$_2$RuO$_4$

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca$_2$RuO$_4$, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. This phenomenon has numerous potential applications in, e.g., neuromorphic computing. While the driving force of the IMT is poorly understood, it has been thought to be a breakdown of the Mott state. Using in operando angle-resolved photoemission spectroscopy, we show that this is not the case: The current-driven conductive phase arises with only a minor reorganisation of the Mott state. This can be explained by the co-existence of structurally different domains that emerge during the IMT. Electronic structure calculations show that the boundaries between domains of slightly different structure lead to a drastic reduction of the overall gap. This permits an increased conductivity, despite the persistent presence of the Mott state. This mechanism represents a paradigm shift in the understanding of IMTs, because it does not rely on the simultaneous presence of a metallic and an insulating phase, but rather on the combined effect of structurally inhomogeneous Mott phases.

cond-mat.str-el↗

arXiv2022

Charge density wave-generated Fermi surfaces in NdTe$_3$

The electronic structure of NdTe$_3$ in the charge density wave phase (CDW) is investigated by angle-resolved photoemission spectroscopy. The combination of high-quality crystals and careful surface preparation reveals subtle and previously unobserved details in the Fermi surface topology, allowing an interpretation of the rich and unexplained quantum oscillations in the rare earth tritellurides RTe$_3$. In particular, several closed Fermi surface elements can be observed that are related to CDW-induced replicas of the original bands, leading to the curious situation in which a CDW does not only remove Fermi surface elements but creates new ones that are observable in transport experiments. Moreover, a large residual Fermi surface is found in the CDW gap, very close to the position of the gapped normal-state Fermi surface. Its area agrees very well with high-frequency quantum oscillations in NdTe$_3$ and its presence is explained by strong electron-phonon coupling combined with the quasi one-dimensional character of the CDW. Finally, we identify the origin of the low-frequency $α$ quantum oscillations ubiquitous for the lighter R elements in the RTe$_3$ family and responsible for the high mobility in these compounds.

cond-mat.str-el↗

arXiv2022

Reconstruction of low dimensional electronic states by altering the chemical arrangement at the SrTiO3 surface

Developing reliable methods for modulating the electronic structure of the two-dimensional electron gas (2DEG) in SrTiO3 is crucial for utilizing its full potential and inducing novel properties. Here, we show that relatively simple surface preparation reconstructs the 2DEG of SrTiO3 (STO) surface, leading to a Lifshitz-like transition. Combining experimental methods, such as angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy (XPS) with ab initio calculations, we find that the modulation of the surface band structures is primarily attributed to the reorganization of the chemical composition. In addition, ARPES experiments demonstrate that vacuum ultraviolet (VUV) light can be efficiently employed to alter the band renormalization of the 2DEG system and control the electron-phonon interaction (EPI). Our study provides a robust and straightforward route to stabilize and tune the low-dimensional electronic structure via the chemical degeneracy of the STO surface.

cond-mat.str-el↗

arXiv2022

What's knot to like? Observation of a linked loop quantum state

Quantum phases can be classified by topological invariants, which take on discrete values capturing global information about the quantum state. Over the past decades, these invariants have come to play a central role in describing matter, providing the foundation for understanding superfluids, magnets, the quantum Hall effect, topological insulators, Weyl semimetals and other phenomena. Here we report a remarkable linking number (knot theory) invariant associated with loops of electronic band crossings in a mirror-symmetric ferromagnet. Using state-of-the-art spectroscopic methods, we directly observe three intertwined degeneracy loops in the material's bulk Brillouin zone three-torus, $\mathbb{T}^3$. We find that each loop links each other loop twice. Through systematic spectroscopic investigation of this linked loop quantum state, we explicitly draw its link diagram and conclude, in analogy with knot theory, that it exhibits linking number $(2,2,2)$, providing a direct determination of the invariant structure from the experimental data. On the surface of our samples, we further predict and observe Seifert boundary states protected by the bulk linked loops, suggestive of a remarkable Seifert bulk-boundary correspondence. Our observation of a quantum loop link motivates the application of knot theory to the exploration of exotic properties of quantum matter.

cond-mat.mes-hall↗

arXiv2022

One-dimensional electronic states in a natural misfit structure

Misfit compounds are thermodynamically stable stacks of two-dimensional materials, forming a three-dimensional structure that remains incommensurate in one direction parallel to the layers. As a consequence, no true bonding is expected between the layers, with their interaction being dominated by charge transfer. In contrast to this well-established picture, we show that interlayer coupling can strongly influence the electronic properties of one type of layer in a misfit structure, in a similar way to the creation of modified band structures in an artificial moiré structure between two-dimensional materials. Using angle-resolved photoemission spectroscopy with a micron-scale light focus, we selectively probe the electronic properties of hexagonal NbSe$_2$ and square BiSe layers that terminate the surface of the (BiSe)$_{1+δ}$NbSe$_2$ misfit compound. We show that the band structure in the BiSe layers is strongly affected by the presence of the hexagonal NbSe$_2$ layers, leading to quasi one-dimensional electronic features. The electronic structure of the NbSe$_2$ layers, on the other hand, is hardly influenced by the presence of the BiSe. Using density functional theory calculations of the unfolded band structures, we argue that the preferred modification of one type of bands is mainly due to the atomic and orbital character of the states involved, opening a promising way to design novel electronic states that exploit the partially incommensurate character of the misfit compounds.

cond-mat.mtrl-sci↗

arXiv2021

Helicoid-arc van Hove singularities in topological chiral crystals

Van Hove singularity are electronic instabilities that lead to many fascinating interactions, such as superconductivity and charge-density waves. And despite much interest, the nexus of emergent correlation effects from van Hove singularities and topological states of matter remains little explored in experiments. By utilizing synchrotron-based angle-resolved photoemission spectroscopy and Density Functional Theory, here we provide the first discovery of the helicoid quantum nature of topological Fermi arcs inducing van Hove singularities. In particular, in topological chiral conductors RhSi and CoSi we directly observed multiple types of inter- and intra-helicoid-arc mediated singularities, which includes the type-I and type-II van Hove singularity. We further demonstrate that the energy of the helicoid-arc singularities are easily tuned by chemical engineering. Taken together, our work provides a promising route to engineering new electronic instabilities in topological quantum materials.

cond-mat.mtrl-sci↗

arXiv2021

Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost

Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about two orders of magnitude has been demonstrated at the spinel/perovskite γ-Al2O3/SrTiO3 interface compared to the paradigm perovskite/perovskite LaAlO3/SrTiO3. We explore the fundamental physics behind this phenomenon from direct measurements of the momentum-resolved electronic structure of this interface using resonant soft-X-ray angle-resolved photoemission. We find an anomaly in orbital ordering of the mobile electrons in γ-Al2O3/SrTiO3 which depopulates electron states in the top STO layer. This rearrangement of the mobile electron system pushes the electron density away from the interface that reduces its overlap with the interfacial defects and weakens the electron-phonon interaction, both effects contributing to the mobility boost. A crystal-field analysis shows that the band order alters owing to the symmetry breaking between the spinel γ-Al2O3 and perovskite SrTiO3. The band-order engineering exploiting the fundamental symmetry properties emerges as another route to boost the performance of oxide devices.

cond-mat.mtrl-sci↗

arXiv2020

Visualizing higher-fold topology in chiral crystals

Novel topological phases of matter are fruitful platforms for the discovery of unconventional electromagnetic phenomena. Higher-fold topology is one example, where the low-energy description goes beyond Standard Model analogs. Despite intensive experimental studies, conclusive evidence remains elusive for the \textit{multi-gap topological nature of higher-fold chiral fermions}. In this Letter, we leverage a combination of fine-tuned chemical engineering and photoemission spectroscopy with photon energy contrast to discover the higher-fold topology of a chiral crystal. We identify all bulk branches of a higher-fold chiral fermion for the first time, critically important for allowing us to explore unique Fermi arc surface states in multiple inter-band gaps, which exhibit an emergent ladder structure. Through designer chemical gating of the samples in combination with our measurements, we uncover an unprecedented multi-gap bulk boundary correspondence. Our demonstration of multi-gap electronic topology will propel future research on unconventional topological responses.

cond-mat.mtrl-sci↗

arXiv2019

Band bending profile and band offset extraction at semiconductor-metal interfaces

The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates from the in-built potentials which lead to broadened and shifted band spectra in spectroscopy measurements. In this work we present a method to resolve the band alignment of buried semiconductor-metal interfaces using core level photoemission spectroscopy and self-consistent electronic structure simulations. As a proof of principle we apply the method to a clean in-situ grown InAs(100)/Al interface, a system with a strong in-built band bending. Due to the high signal-to-noise ratio of the core level spectra the proposed methodology can be used on previously inaccessible semiconductor-metal interfaces and support targeted design of novel hybrid devices and form the foundation for a interface parameter database for specified synthesis processes of semiconductor-metal systems.

cond-mat.mtrl-sci↗

arXiv2013

Strong ferromagnetism at the surface of an antiferromagnet caused by buried magnetic moments

Carrying a large, pure spin magnetic moment of 7 $μ$bohr/atom in the half-filled 4f shell, divalent europium is an outstanding element for assembling novel magnetic devices in which a two-dimensional electron gas (2DEG) is polarized due to exchange interaction with an underlying magnetically-active Eu layer, even in the absence of a magnetic field. A natural example for such geometry is the intermetallic layered material EuRh$_2$Si$_2$, in which magnetically active layers of Eu are well separated from each other by non-magnetic Si-Rh-Si trilayers. Applying angle-resolved photoelectron spectroscopy (ARPES) to this system, we discovered a large spin splitting of a Shockley-type surface state formed by itinerant electrons of the Si-Rh-Si surface related trilayer. ARPES shows that the splitting sets in below approx. 32.5K and quickly saturates to around 150meV upon cooling. Interestingly, this temperature is substantially higher than the order temperature of the Eu 4f moments (approx. 24.5K) in the bulk. Our results clearly show that the magnetic exchange interaction between the surface state and the buried 4f moments in the 4th subsurface layer is the driving force for the formation of itinerant ferromagnetism at the surface. We demonstrate that the observed spin splitting of the surface state, reflecting properties of 2DEG, is easily controlled by temperature. Such a splitting may also be induced into states of functional surface layers deposited onto the surface of EuRh$_2$Si$_2$ or similarly ordered magnetic materials with metallic or semiconducting properties.

cond-mat.str-el↗