arXiv subjects

Allan H. MacDonald

Publications and source records attributed to Allan H. MacDonald.

At least 37 records · Page 2Linked to original sources

arXiv2025

Competition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers

Excitonic insulators represent a unique quantum phase of matter, providing a rich ground for studying exotic quantum bosonic states. Strongly coupled electron-hole bilayers, which host stable dipolar exciton fluids with an exciton density that can be adjusted electrostatically, offer an ideal platform to investigate correlated excitonic insulators. Based on electron-hole bilayers made of MoSe2/hBN/WSe2 heterostructures, here we study the behavior of excitonic insulators in a perpendicular magnetic field. We report the observation of excitonic quantum oscillations in both Coulomb drag signals and electrical resistance at low to medium magnetic fields. Under a strong magnetic field, we identify multiple quantum phase transitions between the excitonic insulator phase and the bilayer quantum Hall insulator phase. These findings underscore the interplay between the electron-hole interactions and Landau level quantization that opens new possibilities for exploring quantum phenomena in composite bosonic insulators.

cond-mat.mes-hall↗

arXiv2025

Quantum oscillations in a dipolar excitonic insulator

Quantum oscillations in magnetization or resistivity are a defining feature of metals subject to an external magnetic field. The phenomenon is generally not expected in insulators without a Fermi surface. The observations of quantum oscillations in Kondo insulating materials have provided a rare counterexample and attracted much theoretical interest. However, the magnetic oscillations in correlated insulators remain poorly understood. Here we report the observations of resistivity quantum oscillations in an excitonic insulator realized in Coulomb-coupled electron-hole double layers with gate-tunability that allows the phenomenon to be explored in a more controllable fashion than in bulk materials. When the cyclotron energy of the electrons or holes is tuned to be comparable to or larger than the exciton binding energy, recurring transitions between excitonic insulators and electron-hole decoupled quantum Hall states are observed. Compressibility measurements show an oscillatory exciton binding energy as a function of magnetic field and electron-hole pair density. Coulomb drag measurements further reveal the formation of excitons with finite angular momentum. Our results are qualitatively captured by mean-field theory calculations. The study demonstrates a new platform for studying quantum oscillations in correlated insulators.

cond-mat.mes-hall↗

arXiv2024

Independently Tunable Flat Bands and Correlations in a Graphene Double Moiré System

We report on a double moiré system consisting of four graphene layers, where the top and bottom pairs form small-twist-angle bilayer graphene, and the middle interface has a large rotational mismatch. This system shows clear signatures of two sets of spatially separated flat bands associated with the top and bottom twisted bilayer graphene (TBG) subsystems, each independently tunable. Thermodynamic analysis reveals weak correlations between layers that allow the chemical potential to be measured as a function of carrier density for each constituent TBG. We find that correlated insulating states at integer number of electrons per moiré unit cell are most robust near magic angle, whereas gapped states at neutrality are more robust at larger twist angles.

cond-mat.mes-hall↗

arXiv2024

Tunneling current-controlled spin states in few-layer van der Waals magnets

Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI3. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI3, depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing.

cond-mat.mes-hall↗

arXiv2024

Bulk versus surface: Nonuniversal partitioning of the topological magnetoelectric effect

The electronic ground state of a three-dimensional (3D) band insulator with time-reversal ($Θ$) symmetry or time-reversal times a discrete translation ($ΘT_{1/2}$) symmetry is classified by a $\mathbb{Z}_{2}$-valued topological invariant and characterized by quantized magnetoelectric response. Here we demonstrate by explicit calculation in model $\mathbb{Z}_{2}$ topological insulator thin-films that whereas the magnetoelectric response is localized at the surface in the $Θ$ symmetry (nonmagnetic) case, it is nonuniversally partitioned between surface and interior contributions in the $ΘT_{1/2}$ (antiferromagnetic) case, while remaining quantized. Within our model the magnetic field induced polarization arises entirely from an anomalous $\mathscr{N}=0$ Landau level subspace within which the projected Hamiltonian is a generalized Su-Schrieffer-Heeger model whose topological properties are consistent with those of the starting 3D model. We identify a new connection between the ground-state geometry of that 3D model and surface-interior partitioning in thin films.

cond-mat.mes-hall↗

arXiv2024

Weak Coupling Theory of Magic-Angle Twisted Bilayer Graphene

Strong correlations occur in magic-angle twisted bilayer graphene (MATBG) when the octet of flat moiré minibands centered on charge neutrality (CN) is partially occupied. The octet consists of a single valence band and a single conduction band for each of four degenerate spin-valley flavors. Motivated by the importance of Hartree electrostatic interactions in determining the filling-factor dependent band structure, we use a time-dependent Hartree approximation to gain insight into electronic correlations. We find that the electronic compressibility is dominated by Hartree interactions, that paramagnetic states are stable over a range of density near CN, and that the dependence of energy on flavor polarization is strongly overestimated by mean-field theory.

cond-mat.str-el↗

arXiv2024

Kerr, Faraday, and Magnetoelectric Effects in MnBi$_2$Te$_4$ Thin Films

The topological magneto-electric effect (TME) is a characteristic property of topological insulators. In this article, we use a simplified coupled-Dirac-cone electronic structure model to theoretically evaluate the THz and far infrared Kerr and Faraday responses of thin films of MnBi$_2$Te$_4$ with up to $N=10$ septuple layers with the goal of clarifying the relationship between these convenient magneto-optical observables and the TME. We find that for even $N$ the linear Kerr and Faraday responses to an electric field vanish in the low-frequency limit, even though the magnetoelectric response is large and approximately quantized.

cond-mat.mes-hall↗

arXiv2024

Adiabatic Approximation and Aharonov-Casher Bands in Twisted Homobilayer TMDs

Topological flat moiré bands with nearly ideal quantum geometry have been identified in homobilayer transition metal dichalcogenide moiré superlattices, and are thought to be crucial for understanding the fractional Chern insulating states recently observed therein. Previous work proposed viewing the system using an adiabatic approximation that replaces the position-dependence of the layer spinor with a nonuniform periodic effective magnetic field. When the local zero-point kinetic energy of this magnetic field cancels identically against that of an effective Zeeman energy, a Bloch-band version of Aharonov-Casher zero-energy modes, which we refer to as Aharonov-Casher band, emerges leading to ideal quantum geometry. Here, we critically examine the validity of the adiabatic approximation and identify the parameter regimes under which Aharonov-Casher bands emerge. We show that the adiabatic approximation is accurate for a wide range of parameters including those realized in experiments. Furthermore, we show that while the cancellation leading to the emergence of Aharonov-Casher bands is generally not possible beyond the leading Fourier harmonic, the leading harmonic is the dominant term in the Fourier expansions of the zero-point kinetic energy and Zeeman energy. As a result, the leading harmonic expansion accurately captures the trend of the bandwidth and quantum geometry, though it may fail to quantitatively reproduce more detailed information about the bands such as the Berry curvature distribution.

cond-mat.mes-hall↗

arXiv2024

Symmetry, topology, and geometry: The many faces of the topological magnetoelectric effect

A delicate tension complicates the relationship between the topological magnetoelectric effect (TME) in three-dimensional (3D) $\mathbb{Z}_2$ topological insulators (TIs) and time-reversal symmetry (TRS). TRS underlies a particular $\mathbb{Z}_2$ topological classification of the electronic ground state of crystalline band insulators and the associated quantization of the magnetoelectric response coefficient calculated using bulk linear response theory but, according to standard symmetry arguments, simultaneously forbids a nonzero magnetoelectric coefficient in any physical finite-size system. This contrast between theories of magnetoelectric response in formal bulk models and in real finite-sized materials originates from the distinct approaches required to introduce notions of (electronic) polarization and orbital magnetization in these fundamentally different environments. In this work we argue for a modified interpretation of the bulk linear response calculations in non-magnetic $\mathbb{Z}_2$ TIs that is more plainly consistent with TRS, and use this interpretation to discuss the effect's observation - still absent over a decade after its prediction. Motivated by analytical results, we conjecture a type of microscopic bulk-boundary correspondence: a bulk insulator with (generalized) TRS supports a magnetoelectric coefficient that is purely itinerant (which is generically related to the geometry of the ground state) if and only if magnetic surface dopants are required for the TME to manifest in finite samples thereof. We conclude that in non-magnetic $\mathbb{Z}_2$ TIs the TME is activated by magnetic surface dopants, that the charge density response to a uniform dc magnetic field is localized at the surface and specified by the configuration of those dopants, and that the TME is qualitatively less robust against disorder than the integer quantum Hall effect.

cond-mat.mes-hall↗

arXiv2024

Intraband collective excitations in fractional Chern insulators are dark

The low-energy collective excitations of semiconductors and insulators often couple strongly to light, allowing them to be probed optically. We argue here that in fractional Chern insulators intra-band collective excitations are dark in the sense that they couple anomalously weakly to light. This conclusion is based on a relationship between ideal quantum geometry and the structure factor of a Chern band, and on a classical plasma analogy motivated by the vortexibility property of ideal Chern bands.

cond-mat.str-el↗

arXiv2024

Optical Imaging of Flavor Order in Flat Band Graphene

Spin and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with fermi surface reconstructions often accompanied by quantized anomalous Hall and superconducting state observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transition metal dichalcogenide layer. Through a systematic study of rhombohedral and rotationally faulted graphene bilayers and trilayers, we show that when the semiconducting dichalcogenide is in direct contact with the graphene, the exciton response is most sensitive to the large momentum rearrangement of the Fermi surface, providing information that is distinct from and complementary to electrical compressibility measurements. The wide-field imaging capability of optical probes allows us to obtain spatial maps of flavor orders with high throughput, and with broad temperature and device compatibility. Our work paves the way for optical probing and imaging of flavor orders in flat band graphene systems.

cond-mat.mes-hall↗

arXiv2024

Orbital Competition in Bilayer Graphene's Fractional Quantum Hall Effect

The lowest Landau level of bilayer graphene has an octet of internal degrees of freedom, composed from spin, valley and orbital two-level systems. Dominance of $n=0$ orbitals over $n=1$ orbitals in low energy quantum fluctuations leads to distinct fractional quantum Hall characteristics compared dominance of $n=1$ over $n=0$. The competition between $n=0$ and $n=1$ orbitals depends sensitively on particle-hole asymmetry and on Lamb shifts due to exchange interactions with the negative energy sea, which must be accounted for simultaneously in assessing the orbital competition. We identify the circumstances under which $n=1$, which supports strong even-denominator FQH states with non-abelian quasiparticles, emerges robustly as the low-energy Landau level.

cond-mat.mes-hall↗

arXiv2024

Itinerant ferromagnetism in transition metal dichalcogenides moiré superlattices

Moiré materials are artificial crystals formed at van der Waals heterojunctions that have emerged as a highly tunable platform to realize much of the rich quantum physics of electrons in atomic scale solids, also providing opportunities to discover new quantum phases of matter. Here we use finite-size exact diagonalization methods to explore the physics of single-band itinerant electron ferromagnetism in semiconductor moiré materials. We predict where ferromagnetism is likely to occur in triangular-lattice moiré systems, and where it is likely to yield the highest Curie temperatures.

cond-mat.str-el↗

arXiv2024

Gate-tunable topological phases in superlattice modulated bilayer graphene

Superlattice potential modulation can produce flat minibands in Bernal-stacked bilayer graphene. In this work we study how band topology and interaction-induced symmetry-broken phases in this system are controlled by tuning the displacement field and the shape and strength of the superlattice potential. We use an analytic perturbative analysis to demonstrate that topological flat bands are favored by a honeycomb-lattice-shaped potential, and numerics to show that the robustness of topological bands depends on both the displacement field strength and the periodicity of the superlattice potential. At integer fillings of the topological flat bands, the strength of the displacement field and the superlattice potential tune phase transitions between quantum anomalous Hall insulator, trivial insulator, and metallic states. We present mean-field phase diagrams in a gate voltage parameter space at filling factor $ν=1$, and discuss the prospects of realizing quantum anomalous Hall insulators and fractional Chern insulators when the superlattice potential modulation is produced by dielectric patterning or adjacent moiré materials.

cond-mat.mes-hall↗

arXiv2023

Magic Angles and Fractional Chern Insulators in Twisted Homobilayer TMDs

We explain the appearance of magic angles and fractional Chern insulators in twisted K-valley homobilayer transition metal dichalcogenides by mapping their continuum model to a Landau level problem. Our approach relies on an adiabatic approximation for the quantum mechanics of valence band holes in a layer-pseudospin field that is valid for sufficiently small twist angles and on a lowest Landau level approximation that is valid for sufficiently large twist angles. It simply explains why the quantum geometry of the lowest moiré miniband is nearly ideal at particular flat-band twist angles, predicts that topological flat bands occur only when the valley-dependent moiré potential is sufficiently strong compared to the interlayer tunneling amplitude, and provides a powerful starting point for the study of interactions

cond-mat.str-el↗

arXiv2023

Ab-initio study of the energy competition between Γand K valleys in bilayer transition metal dichalcogenides

Moiré engineering in two-dimensional van der Waals bilayer crystals has emerged as a flexible platform for controlling strongly correlated electron systems. The competition between valleys for the band extremum energy position in the parent layers is crucial in deciding the qualitative nature of the moiré Hamiltonian since it controls the physics of the moiré minibands. Here we use density functional theory to examine the competition between K and $Γ$ for the valence band maximum in homo- and hetero-bilayers formed from the transition metal dichalcogenides (TMD), MX\{_2} where M=Mo,W and X=S,Se,Te. We shed light on how the competition is influenced by interlayer separation, which can be modified by applying pressure, by external gate-defined electric fields, and by transition metal atom d-orbital correlations. Our findings are related to several recent experiments, and contribute to the development of design rules for moiré materials.

cond-mat.mtrl-sci↗

arXiv2023

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4

Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of high-quality MnBi2Te4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in-situ characterization techniques, we obtain critical insights into the atomic-level control of MnBi2Te4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses. Overall, these results establish a foundation for understanding the growth dynamics of MnBi2Te4 and pave the way for the future applications of MBE in emerging topological quantum materials.

cond-mat.mtrl-sci↗

arXiv2023

Magnetism and Quantum Melting in Moiré-Material Wigner Crystals

Recent experiments have established that semiconductor-based moiré materials can host incompressible states at a series of fractional moiré-miniband fillings. These states have been identified as generalized Wigner crystals in which electrons localize on a subset of the available triangular-lattice moiré superlattice sites. In this article, we use momentum-space exact diagonalization to investigate the many-body ground state evolution at rational fillings from the weak-hopping classical lattice gas limit, in which only spin degrees-of-freedom are active at low energies, to the strong-hopping metallic regime where the Wigner crystals melt. We specifically address the nature of the magnetic ground states of the generalized Wigner crystals at fillings $ν$ = 1/3 and $ν$ = 2/3.

cond-mat.str-el↗