arXiv subjects

Allan H. MacDonald

Publications and source records attributed to Allan H. MacDonald.

At least 91 records · Page 5Linked to original sources

arXiv2021

In-plane critical magnetic fields in magic-angle twisted trilayer graphene

It has recently been shown that superconductivity in magic-angle twisted trilayer graphene survives to in-plane magnetic fields that are well in excess of the Pauli limit, and much stronger than the in-plane critical magnetic fields of magic-angle twisted bilayer graphene. The difference is surprising because twisted bilayers and trilayers both support the magic-angle flat bands thought to be the fountainhead of twisted graphene superconductivity. We show here that the difference in critical magnetic fields can be traced to a $\mathcal{C}_2 \mathcal{M}_{h}$ symmetry in trilayers that survives in-plane magnetic fields, and also relative displacements between top and bottom layers that are not under experimental control at present. An gate electric field breaks the $\mathcal{C}_2 \mathcal{M}_{h}$ symmetry and therefore limits the in-plane critical magnetic field.

cond-mat.mes-hall↗

arXiv2021

Strongly correlated excitonic insulator in atomic double layers

Excitonic insulators (EI) arise from the formation of bound electron-hole pairs (excitons) in semiconductors and provide a solid-state platform for quantum many-boson physics. Strong exciton-exciton repulsion is expected to stabilize condensed superfluid and crystalline phases by suppressing both density and phase fluctuations. Although spectroscopic signatures of EIs have been reported, conclusive evidence for strongly correlated EI states has remained elusive. Here, we demonstrate a strongly correlated spatially indirect two-dimensional (2D) EI ground state formed in transition metal dichalcogenide (TMD) semiconductor double layers. An equilibrium interlayer exciton fluid is formed when the bias voltage applied between the two electrically isolated TMD layers, is tuned to a range that populates bound electron-hole pairs, but not free electrons or holes. Capacitance measurements show that the fluid is exciton-compressible but charge-incompressible - direct thermodynamic evidence of the EI. The fluid is also strongly correlated with a dimensionless exciton coupling constant exceeding 10. We further construct an exciton phase diagram that reveals both the Mott transition and interaction-stabilized quasi-condensation. Our experiment paves the path for realizing the exotic quantum phases of excitons, as well as multi-terminal exciton circuitry for applications.

cond-mat.mtrl-sci↗

arXiv2021

Mirror Symmetry Breaking and Lateral Stacking Shifts in Twisted Trilayer Graphene

We construct a continuum model of twisted trilayer graphene using {\it ab initio} density-functional-theory calculations, and apply it to address twisted trilayer electronic structure. Our model accounts for moiré variation in site energies, hopping between outside layers and within layers. We focus on the role of a mirror symmetry present in ABA graphene trilayers with a middle layer twist. The mirror symmetry is lost intentionally when a displacement field is applied between layers, and unintentionally when the top layer is shifted laterally relative to the bottom layer. We use two band structure characteristics that are directly relevant to transport measurements, the Drude weight and the weak-field Hall conductivity, and relate them via the Hall density to assess the influence of the accidental lateral stacking shifts currently present in all experimental devices on electronic properties, and comment on the role of the possible importance of accidental lateral stacking shifts for superconductivity in twisted trilayers.

cond-mat.mes-hall↗

arXiv2021

Magnetoelectric Response of Antiferromagnetic Van der Waals Bilayers

We predict that antiferromagnetic bilayers formed from van der Waals (vdW) materials, like bilayer CrI$_3$, have a strong magnetoelectric response that can be detected by measuring the gate voltage dependence of Faraday or Kerr rotation signals, total magnetization, or anomalous Hall conductivity. Strong effects are possible in single-gate geometries, and in dual-gate geometries that allow internal electric fields and total carrier densities to be varied independently. We comment on the reliability of density-functional-theory estimates of interlayer magnetic interactions in van der Waals bilayers, and on the sensitivity of magnetic interactions to pressure that alters the spatial separation between layers.

cond-mat.mes-hall↗

arXiv2021

Critical magnetic fields and electron-pairing in magic-angle twisted bilayer graphene

The velocities of the quasiparticles that form Cooper pairs in a superconductor are revealed by the upper critical magnetic field. Here we use this property to assess superconductivity in magic-angle twisted bilayer graphene (MATBG), which has been observed over a range of moiré band filling, twist angle, and screening environment conditions. We find that for pairing mechanisms that are unrelated to correlations within the MATBG flat bands, minima in an average Fermi velocity $v_F^* \equiv k_B T_c \ell_c /\hbar $, where $\ell_c$ is the magnetic length at the critical perpendicular magnetic field, are always coincident with transition temperature maxima. Both extrema occur near flat-band van Hove singularities. Since no such association is present in MATBG experimental data, we conclude that electronic correlations that yield a band-filling-dependent pairing glue must play a crucial role in MATBG superconductivity.

cond-mat.supr-con↗

arXiv2021

Electron-exciton interactions in the exciton-polaron problem

Recently, it has been demonstrated that the absorption of moderately doped two-dimensional semiconductors can be described in terms of exciton-polarons. In this scenario, attractive and repulsive polaron branches are formed due to interactions between a photo-excited exciton and a Fermi sea of excess charge carriers. These interactions have previously been treated in a phenomenological manner. Here, we present a microscopic derivation of the electron-exciton interactions which utilizes a mixture of variational and perturbative approaches. We find that the interactions feature classical charge-dipole behaviour in the long-range limit and that they are only weakly modified for moderate doping. We apply our theory to the absorption properties and show that the dependence on doping is well captured by a model with a phenomenological contact potential.

cond-mat.mes-hall↗

arXiv2021

Strong-Magnetic-Field Magnon Transport in Monolayer Graphene

At high magnetic fields, monolayer graphene hosts competing phases distinguished by their breaking of the approximate SU(4) isospin symmetry. Recent experiments have observed an even denominator fractional quantum Hall state thought to be associated with a transition in the underlying isospin order from a spin-singlet charge density wave at low magnetic fields to an antiferromagnet at high magnetic fields, implying that a similar transition must occur at charge neutrality. However, this transition does not generate contrast in typical electrical transport or thermodynamic measurements and no direct evidence for it has been reported, despite theoretical interest arising from its potentially unconventional nature. Here, we measure the transmission of ferromagnetic magnons through the two dimensional bulk of clean monolayer graphene. Using spin polarized fractional quantum Hall states as a benchmark, we find that magnon transmission is controlled by the detailed properties of the low-momentum spin waves in the intervening Hall fluid, which is highly density dependent. Remarkably, as the system is driven into the antiferromagnetic regime, robust magnon transmission is restored across a wide range of filling factors consistent with Pauli blocking of fractional quantum hall spin-wave excitations and their replacement by conventional ferromagnetic magnons confined to the minority graphene sublattice. Finally, using devices in which spin waves are launched directly into the insulating charge-neutral bulk, we directly detect the hidden phase transition between bulk insulating charge density wave and a canted antiferromagnetic phases at charge neutrality, completing the experimental map of broken-symmetry phases in monolayer graphene.

cond-mat.mes-hall↗

arXiv2021

Floquet-engineering topological transitions in a twisted transition metal dichalcogenide homobilayer

Motivated by the recent experimental realization of twisted transition metal dichalcogenide bilayers, we study a simplified model driven by different forms of monochromatic light. As a concrete and representative example we use parameters that correspond to a twisted MoTe$_2$ homobilayer. First, we consider irradiation with circularly polarized light in free space and demonstrate that the corresponding Floquet Hamiltonian takes the same form as the static Hamiltonian, only with a constant overall shift in quasi-energy. This is in stark contrast to twisted bilayer graphene, where new terms are typically generated under an analagous drive. Longitudinal light, on the other hand, which can be generated from the transverse magnetic mode in a waveguide, has a much more dramatic effect--it renormalizes the tunneling strength between the layers, which effectively permits the tuning of the twist angle {\em in-situ}. We find that, by varying the frequency and amplitude of the drive, one can induce a topological transition that cannot be obtained with the traditional form of the Floquet drive in free space. Furthermore, we find that strong drives can have a profound effect on the layer pseudospin texture of the twisted system, which coincides with multiple simultaneous band gap closings in the infinite-frequency limit. Surprisingly, these bandgap closings are not associated with topological transitions. For high but finite drive frequencies near $0.7$eV, the infinite-frequency band crossings become band gap minima of the order of $10^{-6}$ eV or smaller.

cond-mat.mes-hall↗

arXiv2021

Gate-Tunable Quantum Anomalous Hall Effects in MnBi$_2$Te$_4$ Thin Films

The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBi$_2$Te$_4$. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that both axion insulator/semimetal and Chern insulator/semimetal transitions can be driven by electrical gate fields on the $\sim 10$ meV/nm scale. This effect is described by combining a simplified coupled-Dirac-cone model of multilayer thin films with Schr{ö}dinger-Poisson self-consistent-field equations.

cond-mat.mes-hall↗

arXiv2020

Competing zero-field Chern insulators in Superconducting Twisted Bilayer Graphene

The discovery of magic angle twisted bilayer graphene (MATBG) has unveiled a rich variety of superconducting, magnetic and topologically nontrivial phases. The existence of all these phases in one material, and their tunability, has opened new pathways for the creation of unusual gate tunable junctions. However, the required conditions for their creation - gate induced transitions between phases in zero magnetic field - have so far not been achieved. Here, we report on the first experimental demonstration of a device that is both a zero-field Chern insulator and a superconductor. The Chern insulator occurs near moire cell filling factor v = +1 in a hBN non-aligned MATBG device and manifests itself via an anomalous Hall effect. The insulator has Chern number C = +-1 and a relatively high Curie temperature of Tc = 4.5 K. Gate tuning away from this state exposes strong superconducting phases with critical temperatures of up to Tc = 3.5 K. In a perpendicular magnetic field above B > 0.5 T we observe a transition of the /C/= +1 Chern insulator from Chern number C = +-1 to C = 3, characterized by a quantized Hall plateau with Ryx = h/3e2. These observations show that interaction-induced symmetry breaking in MATBG leads to zero-field ground states that include almost degenerate and closely competing Chern insulators, and that states with larger Chern numbers couple most strongly to the B-field. By providing the first demonstration of a system that allows gate-induced transitions between magnetic and superconducting phases, our observations mark a major milestone in the creation of a new generation of quantum electronics.

cond-mat.mes-hall↗

arXiv2020

Multiple Flat Bands and Topological Hofstadter Butterfly in Twisted Bilayer Graphene Close to the Second Magic Angle

Moiré superlattices in two-dimensional (2D) van der Waals (vdW) heterostructures provide 20 an efficient way to engineer electron band properties. The recent discovery of exotic quantum phases and their interplay in twisted bilayer graphene (tBLG) has built this moiré system one of the most renowned condensed matter platforms (1-10). So far the studies of tBLG has been mostly focused on the lowest two flat moiré bands at the first magic angle θm1 ~ 1.1°, leaving high-order moiré bands and magic angles largely unexplored. Here we report 25 an observation of multiple well-isolated flat moiré bands in tBLG close to the second magic angle θm2 ~ 0.5°, which cannot be explained without considering electron-election interactions. With high magnetic field magneto-transport measurements, we further reveal a qualitatively new, energetically unbound Hofstadter butterfly spectrum in which continuously extended quantized Landau level gaps cross all trivial band-gaps. The 30 connected Hofstadter butterfly strongly evidences the topologically nontrivial textures of the multiple moiré bands. Overall, our work provides a new perspective for understanding the quantum phases in tBLG and the fractal Hofstadter spectra of multiple topological bands.

cond-mat.mes-hall↗

arXiv2020

Voltage-Controlled Magnetic Reversal in Orbital Chern Insulators

Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect, and have so far been identified experimentally in magnetically-doped topological insulator (MTI) thin films and in bilayer graphene moir{é} superlattices. We classify Chern insulator ferromagnets as either spin or orbital, depending on whether the orbital magnetization results from spontaneous spin-polarization combined with spin-orbit interactions, as in the MTI case, or directly from spontaneous orbital currents, as in the moir{é} superlattice case. We argue that in a given magnetic state, characterized for example by the sign of the anomalous Hall effect, the magnetization of an orbital Chern insulator will often have opposite signs for weak $n$ and weak $p$ electrostatic or chemical doping. This property enables pure electrical switching of a magnetic state in the presence of a fixed magnetic field.

cond-mat.str-el↗

arXiv2020

Electrical switching of magnetic order in an orbital Chern insulator

Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favors ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields---a longstanding technological goal in spintronics and multiferroics---can be achieved only indirectly. Here, we experimentally demonstrate direct electric field control of magnetic states in an orbital Chern insulator, a magnetic system in which non-trivial band topology favors long range order of orbital angular momentum but the spins are thought to remain disordered. We use van der Waals heterostructures consisting of a graphene monolayer rotationally faulted with respect to a Bernal-stacked bilayer to realize narrow and topologically nontrivial valley-projected moiré minibands. At fillings of one and three electrons per moiré unit cell within these bands, we observe quantized anomalous Hall effects with transverse resistance approximately equal to $h/2e^2$, which is indicative of spontaneous polarization of the system into a single-valley-projected band with a Chern number equal to two. At a filling of three electrons per moiré unit cell, we find that the sign of the quantum anomalous Hall effect can be reversed via field-effect control of the chemical potential; moreover, this transition is hysteretic, which we use to demonstrate nonvolatile electric field induced reversal of the magnetic state. A theoretical analysis indicates that the effect arises from the topological edge states, which drive a change in sign of the magnetization and thus a reversal in the favored magnetic state. Voltage control of magnetic states can be used to electrically pattern nonvolatile magnetic domain structures hosting chiral edge states, with applications ranging from reconfigurable microwave circuit elements to ultralow power magnetic memory.

cond-mat.str-el↗

arXiv2020

Combined minivalley and layer control in twisted double bilayer graphene

Control over minivalley polarization and interlayer coupling is demonstrated in double bilayer graphene twisted with an angle of 2.37$^\circ$. This intermediate angle is small enough for the minibands to form and large enough such that the charge carrier gases in the layers can be tuned independently. Using a dual-gated geometry we identify and control all possible combinations of minivalley polarization via the population of the two bilayers. An applied displacement field opens a band gap in either of the two bilayers, allowing us to even obtain full minivalley polarization. In addition, the wavefunctions of the minivalleys are mixed by tuning through a Lifshitz transition, where the Fermi surface topology changes. The high degree of control makes twisted double bilayer graphene a promising platform for valleytronics devices such as valley valves, filters and logic gates.

cond-mat.mes-hall↗

arXiv2020

Valley Pumping via Edge States and the Nonlocal Valley Hall Effect in Two-Dimensional Semiconductors

Recent experiments have studied the temperature and gate voltage dependence of nonlocal transport in bilayer graphene, identifying features thought to be associated with the two-dimensional semiconductor's bulk intrinsic valley Hall effect. Here, we use both simple microscopic tight-binding ribbon models and phenomenological bulk transport equations to emphasize the impact of sample edges on the nonlocal voltage signals. We show that the nonlocal valley Hall response is sensitive to electronic structure details at the sample edges, and that it is enhanced when the local longitudinal conductivity is larger near the sample edges than in the bulk. We discuss recent experiments in light of these findings and also discuss the close analogy between electron pumping between valleys near two-dimensional sample edges in the valley Hall effect, and bulk pumping between valleys due to the chiral anomaly in three-dimensional topological semimetals.

cond-mat.mes-hall↗

arXiv2020

Magnetized Topological Insulator Multilayers

We discuss the magnetic and topological properties of bulk crystals and quasi-two-dimensional thin films formed by stacking intrinsic magnetized topological insulator ( for example Mn(Sb$_{x}$Bi$_{1-x}$)$_2$X$_4$ with X = Se,Te, including MnBi$_2$Te$_4$) septuple layers and topological insulator quintuple layers in arbitrary order. Our analysis makes use of a simplified model that retains only Dirac-cone degrees of freedom on both surfaces of each septuple or quintuple layer. We demonstrate the model's applicability and estimate its parameters by comparing with {\it ab initio } density-functional-theory(DFT) calculations. We then employ the coupled Dirac cone model to provide an explanation for the dependence of thin-film properties, particularly the presence or absence of the quantum anomalous Hall effect, on film thickness, magnetic configuration, and stacking arrangement, and to comment on the design of Weyl superlattices.

cond-mat.mes-hall↗

arXiv2020

Majorana Zero Modes in Cylindrical Semiconductor Quantum Wire

We study Majorana zero modes properties in cylindrical cross-section semiconductor quantum wires based on the $k \cdot p$ theory and a discretized lattice model. Within this model, the influence of disorder potentials in the wire and amplitude and phase fluctuations of the superconducting order-parameter are discussed. We find that for typical wire geometries, pairing potentials, and spin-orbit coupling strengths, coupling between quasi-one-dimensional sub-bands is weak, low-energy quasiparticles near the Fermi energy are nearly completely spin-polarized, and the number of electrons in the active sub-bands of topological states is small.

cond-mat.mes-hall↗

arXiv2020

Phonon Renormalization in Reconstructed MoS$_2$ Moiré Superlattices

In moiré crystals formed by stacking van der Waals (vdW) materials, surprisingly diverse correlated electronic phases and optical properties can be realized by a subtle change in the twist angle. Here, we discover that phonon spectra are also renormalized in MoS$_2$ twisted bilayers, adding a new perspective to moiré physics. Over a range of small twist angles, the phonon spectra evolve rapidly due to ultra-strong coupling between different phonon modes and atomic reconstructions of the moiré pattern. We develop a new low-energy continuum model for phonons that overcomes the outstanding challenge of calculating properties of large moiré supercells and successfully captures essential experimental observations. Remarkably, simple optical spectroscopy experiments can provide information on strain and lattice distortions in moiré crystals with nanometer-size supercells. The newly developed theory promotes a comprehensive and unified understanding of structural, optical, and electronic properties of moiré superlattices.

cond-mat.mes-hall↗