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Almog R. Azulay

Publications and source records attributed to Almog R. Azulay.

2 recordsLinked to original sources

Homologous self-assembled superlattices: What causes their periodic polarity switching? Review, model, and experimental test

Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of a superlattice is typically demanding technologically. In contrast, accumulated evidence points to a tendency among a certain class of multiple-cation binary oxides to self-assemble spontaneously as superlattice structures. This class has been dubbed the homologous superlattices. For a famous example, when a mixture of indium and zinc is oxidized, the phases of In-O and ZnO separate in an orderly periodic manner, along the ZnO polar axis, with polarity inversion taking place between consecutive ZnO sections. As we review here, the same structure has been observed when the indium was replaced with other metals, and perhaps even in ZnO alone. This peculiar self-assembled structure has been attracting research over the past decade. The purpose of this study is to gain understanding of the physics underlying the formation of this unique structure. Here, we first provide an extensive review of the accumulated literature on these spontaneously-formed structures and then propose an explanation for the long-standing mystery of this intriguing self-assembly in the form of an electrostatic growth phenomenon and test the proposed model on experimental data.

cond-mat.mtrl-sci

Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?

Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a specific example - the case of ZnO nanowires grown on silicon oxide and glass. We show how electric fields exerted by the insulating substrate may be manipulated through the surface charge to define the orientation and polarity of the nanowires. Surface charge is ubiquitous on the surfaces of semiconductors and insulators, and as a result, substrate electric fields need always be considered. Our results suggest a new concept, according to which the growth of wurtzite semiconductors may often be described as a process of electric-charge-induced self assembly, wherein the internal built-in field in the polar material tends to align in parallel to an external field exerted by the substrate to minimize the interfacial energy of the system.

cond-mat.mtrl-sci