arXiv subjects

Alon Hever

Publications and source records attributed to Alon Hever.

4 recordsLinked to original sources

arXiv2025

Composition/structure directed search for new chalcogenide compounds

This work presents a simple scheme for finding new crystalline compounds by adapting structure types from neighbor atoms compounds. The approach is demonstrated for the selenide and sulfide families of binary compounds. It predicts ten new compounds that are not currently included in the inorganic crystal structure database (ICSD). The compounds primarily originated from a small search domain that includes near neighbors. Comparison with extended searches that include structures from binary systems of more remote atoms in the periodic table demonstrate the relative efficiency of near neighbor screening. This points at the possibility of using similar directed searches as a heuristic rule for efficiently finding new stable compounds in additional compound families.

cond-mat.mtrl-sci↗

arXiv2017

The structure and composition statistics of 6A binary and ternary crystalline materials

The fundamental principles underlying the arrangement of elements into solid compounds with an enormous variety of crystal structures are still largely unknown. This study presents a general overview of the structure types appearing in an important subset of the solid compounds, i.e., binary and ternary compounds of the 6A column oxides, sulfides and selenides. It contains an analysis of these compounds, including the prevalence of various structure types, their symmetry properties, compositions, stoichiometries and unit cell sizes. It is found that these compound families include preferred stoichiometries and structure types that may reflect both their specific chemistry and research bias in the available empirical data. Identification of non-overlapping gaps and missing stoichiometries in these structure populations may be used as guidance in the search for new materials.

cond-mat.mtrl-sci↗

arXiv2013

Fluorination Effects on the Structural Stability and Electronic Properties of sp3 Type Silicon Nanotubes

A density functional theory study of the structural and electronic properties and relative stability of fluorinated sp3 silicon nanotubes and their corresponding silicon nanowires built along various crystallographic orientations is presented. The structural stability is found to increase linearly with the fluorine surface coverage and for coverages exceeding 25% the tubular structures are predicted to be more stable than their wire-like counterparts. The bandgaps of the fully fluorinated systems are lower than those of their fully hydrogenated counterparts by up to 0.79 eV for systems having a relatively low silicon molar fraction. As the silicon molar fraction increases these differences appear to reduce. For mixed fluorination and hydrogenation surface decoration schemes the bandgaps usually lie between the values of the fully hydrogenated and fully fluorinated systems. Furthermore, the bandgap values of the silicon nanotubes are found to be more sensitive to the fluorine surface coverage than those of the silicon nanowires. These results indicate that surface functionalization may be used to control the stability of narrow quasi-one-dimensional silicon nanostructures and opens the way towards chemical tailoring of their electronic properties.

cond-mat.mtrl-sci↗

arXiv2012

Structural stability and electronic properties of SP3 type silicon nanotubes

A density functional theory study of the structural and electronic properties and relative stability of narrow SP3 silicon nanotubes of different growth orientations is presented. All nanotubes studied and their corresponding wire structures are found to be meta-stable with the wires being more energetically stable. Silicon nanotubes show a dramatic bandgap increase of up to 68% with respect to the corresponding wires. Furthermore, a direct relation between the bandgap of the system and the molar fraction of the passivating hydrogen contents is found. These results suggest that by careful control over their crystallographic growth orientation, dimensions, and chemical composition it should be possible to design and fabricate silicon nanotubes with desired electronic properties.

cond-mat.mes-hall↗