arXiv subjects

Alwin Daus

Publications and source records attributed to Alwin Daus.

13 recordsLinked to original sources

arXiv2025

Reduced Variability in Threshold Switches Using Heterostructures of SiO${_x}$ and Vertically Aligned MoS${_2}$

Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. These vdW gaps can guide the migration of intercalated ions and thus regulate filament growth in resistive switching (RS) devices. Vertically aligned 2D materials and their heterostructures provide vdW gap-mediated ion transport in memristor crossbars, providing great potential for high-density integration and reliable RS performance. Nevertheless, the fundamental switching mechanisms and their contributions to the RS remain inadequately understood. In this work, we investigate silver (Ag) filament-based threshold switching (TS) in heterostructures comprising vertically aligned 2D molybdenum disulfide (VAMoS${_2}$) grown via sulfurization and silicon oxide (SiO${_x}$). Compared to SiO${_x}$-only devices, the SiO${_x}$/VAMoS${_2}$ devices exhibit TS with higher on-threshold and hold voltages, each approximately 0.4 V, faster switching times down to 356 ns under a 4 V pulse, and a lower cycle-to-cycle on-current variability of 3.0%. A physics-based, variability-aware model reveals that confined Ag ion migration within the vdW gaps in VAMoS${_2}$ forms ultrathin seed filaments, which guide filament growth in the SiO${_x}$ layer. These findings establish SiO${_x}$/VAMoS${_2}$ heterostructures as a promising concept for reliable TS in vertical device architectures for emerging memories and neuromorphic computing.

physics.app-ph↗

arXiv2025

Threshold Switching in Vertically Aligned MoS${_2}$/SiO${_x}$ Heterostructures based on Silver Ion Migration

Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on silver (Ag) conductive filaments has been observed in many materials, including layered two-dimensional (2D) transition metal dichalcogenides (TMDs). 2D TMDs are particularly promising for metal ion movement due to their van der Waals (vdW) gaps between their sheets, facilitating ion migration and filament formation without disturbing covalent chemical bonds. In this work, we demonstrate the heterostructure growth of vertically aligned molybdenum disulfide (VAMoS${_2}$) with an amorphous silicon oxide (SiO${_x}$) layer on top after sulfurization. We show that Ag ions migrate through this material stack, enabling TS. Our Ag/SiO${_x}$/VAMoS${_2}$/gold (Au) devices exhibit TS at low voltages of ~0.63 V, with high on-state currents over 200 ${\mu}$A and stable switching exceeding 10${^4}$ cycles. Moreover, we identify two rate-limiting steps for filament formation through a physics-based dynamical model and simulate the switching kinetics. Our devices show a fast on-switching time of 311 ns and spontaneous relaxation in 233 ns. These findings deepen the understanding of SiOx/MoS${_2}$-based RS devices and demonstrate the promise for applications in emerging memories and neuromorphic computing systems.

cond-mat.mtrl-sci↗

arXiv2025

Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices

Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising candidates for neuromorphic electronic devices. This work addresses the coexistence of volatile and nonvolatile resistive switching in lateral memristors based on molybdenum disulfide with silver as the active electrode. The fabricated devices exhibited switching voltages of ~0.16 V and ~0.52 V for volatile and nonvolatile operation, respectively, under direct-current measurements. They also displayed the essential synaptic functions of paired-pulse facilitation and short- and long-term plasticity under pulse stimulation. The operation mechanism was investigated by in-situ transmission electron microscopy, which showed lateral migration of silver ions along the molybdenum disulfide between electrodes. Based on the experimental data, a macroscopic semi-classical electron transport model was used to reproduce the current-voltage characteristics and support the proposed underlying switching mechanisms.

cond-mat.mtrl-sci↗

arXiv2024

Volatile MoS${_2}$ Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS${_2}$)-based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single-crystal MoS${_2}$ flakes requiring a forming step to enable RS. Here, we present volatile RS with multilayer MoS${_2}$ grown by metal-organic chemical vapor deposition (MOCVD) with repeatable forming-free operation. The devices show highly reproducible volatile RS with low operating voltages of approximately 2 V and fast switching times down to 130 ns considering their micrometer scale dimensions. We investigate the switching mechanism based on Ag ion surface migration through transmission electron microscopy, electronic transport modeling, and density functional theory. Finally, we develop a physics-based compact model and explore the implementation of our volatile memristors as artificial neurons in neuromorphic systems.

physics.app-ph↗

arXiv2024

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition of high-quality dielectrics on 2DMs and the tuning of the 2DM doping levels. Here, we report a scalable plasma-enhanced atomic layer deposition (PEALD) process for direct deposition of a nonstoichiometric aluminum oxide (AlOX) dielectric, overcoming the damage issues associated with conventional methods. Furthermore, we control the thickness of the dielectric layer to systematically tune the doping level of 2DMs. The experimental results demonstrate successful deposition without detectable damage, as confirmed by Raman spectroscopy and electrical measurements. Our method enables tuning of the Dirac and threshold voltages of back-gated graphene and MoS${_2}$ field-effect transistors (FETs), respectively, while also increasing the charge carrier mobility in both device types. We further demonstrate the method in top-gated MoS${_2}$ FETs with double-stack dielectric layers (AlOX+Al${_2}$O${_3}$), achieving critical breakdown field strengths of 7 MV/cm and improved mobility compared with the back gate configuration. In summary, we present a PEALD process that offers a scalable and low-damage solution for dielectric deposition on 2DMs, opening new possibilities for precise tuning of device characteristics in heterogeneous electronic circuits.

physics.app-ph↗

arXiv2024

Toward Mass-Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization

Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells are fabricated in a non-scalable fashion using exfoliated materials due to the absence of high-quality, large-area, multilayer TMDs. Here, we present the scalable, thickness-tunable synthesis of multilayer tungsten diselenide (WSe$_{2}$) films by selenizing pre-patterned tungsten with either solid source selenium or H$_{2}$Se precursors, which leads to smooth, wafer-scale WSe$_{2}$ films with a layered van der Waals structure. The films have charge carrier lifetimes up to 144 ns, over 14x higher than large-area TMD films previously demonstrated. Such high carrier lifetimes correspond to power conversion efficiency of ~22% and specific power of ~64 W g$^{-1}$ in a packaged solar cell, or ~3 W g$^{-1}$ in a fully-packaged solar module. This paves the way for the mass-production of high-efficiency multilayer WSe$_{2}$ solar cells at low cost.

cond-mat.mtrl-sci↗

arXiv2023

Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors

Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments created by the diffusion of metal ions between the electrodes. However, the area-scalable fabrication of patterned devices involves polymers that are difficult to remove from the 2D material interfaces without damage. Remaining polymer residues are often overlooked when interpreting the RS characteristics of 2D material memristors. Here, we demonstrate that the parasitic residues themselves can be the origin of RS. We emphasize the necessity to fabricate appropriate reference structures and employ atomic-scale material characterization techniques to properly evaluate the potential of 2D materials as the switching layer in vertical memristors. Our polymer-residue-based memristors exhibit RS typical for a filamentary mechanism with metal ion migration, and their performance parameters are strikingly similar to commonly reported 2D material memristors. This reveals that the exclusive consideration of electrical data without a thorough verification of material interfaces can easily lead to misinterpretations about the potential of 2D materials for memristor applications.

cond-mat.mes-hall↗

arXiv2023

Efficiency Limit of Transition Metal Dichalcogenide Solar Cells

Transition metal dichalcogenides (TMDs) show great promise as absorber materials in high-specific-power (i.e. high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces. However, the ultimate performance limits of TMD solar cells remain unknown today. Here, we establish the efficiency limits of multilayer MoS2, MoSe2, WS2, and WSe2 solar cells under AM 1.5 G illumination as a function of TMD film thickness and material quality. We use an extended version of the detailed balance method which includes Auger and defect-assisted Shockley-Reed-Hall recombination mechanisms in addition to radiative losses, calculated from measured optical absorption spectra. We demonstrate that single-junction solar cells with TMD films as thin as 50 nm could in practice achieve up to 25% power conversion efficiency with the currently available material quality, making them an excellent choice for high-specific-power photovoltaics.

physics.app-ph↗

arXiv2023

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron microscopy (TEM). Here, we investigate the switching of multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel (Ni) electrodes through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature-dependent current-voltage measurements. We propose the formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism. We corroborate our electrical data with TEM analyses to establish temperature-dependent current-voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. Our memristors exhibit a wide and tunable current operation range and low stand-by currents, in line with the state of the art in h-BN-based threshold switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of 10${^7}$.

physics.app-ph↗

arXiv2022

Strain-Enhanced Mobility of Monolayer MoS2

Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the mobility of two-dimensional (2D) semiconductors, e.g. by reducing intervalley scattering or lowering effective masses. Here, we experimentally show strain-enhanced electron mobility in monolayer MoS2 transistors with uniaxial tensile strain, on flexible substrates. The on-state current and mobility are nearly doubled with tensile strain up to 0.7%, and devices return to their initial state after release of strain. We also show a gate-voltage-dependent gauge factor up to 200 for monolayer MoS2, which is higher than previous values reported for sub-1 nm thin piezoresistive films. These results demonstrate the importance of strain engineering 2D semiconductors for performance enhancements in integrated circuits, or for applications such as flexible strain sensors.

cond-mat.mtrl-sci↗

arXiv2021

Lateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films

Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low temperature (<= 250 C) could play a role in flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore lateral transport in chalcogenide films (Sb2Te3, Ge2Sb2Te5, Ge4Sb6Te7) and multilayers, with Hall measurements (in <= 50 nm thin films) and with p-type transistors (in <= 5 nm ultrathin films). The highest Hall mobilities are measured for Sb2Te3/GeTe superlattices (~18 cm2/V/s at room temperature), over 2-3x higher than the other films. In ultrathin p-type FETs with Ge2Sb2Te5, we achieve field-effect mobility up to ~5.5 cm2/V/s with current on/off ratio ~10000, the highest for Ge2Sb2Te5 transistors to date. We also explore process optimizations (e.g., AlOx capping layer, type of developer for lithography) and uncover their trade-offs towards the realization of p-type transistors with acceptable mobility and on/off current ratio. Our study provides essential insights into the optimization of electronic devices based on p-type chalcogenides.

cond-mat.mtrl-sci↗

arXiv2021

High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells

Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: 1) transparent graphene contacts to mitigate Fermi-level pinning, 2) $\rm{MoO}_\it{x}$ capping for doping, passivation and anti-reflection, and 3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of $\rm{4.4\ W\,g^{-1}}$ for flexible TMD ($\rm{WSe_2}$) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to $\rm{46\ W\,g^{-1}}$, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

physics.app-ph↗

arXiv2020

High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on the micron scale, not benefitting from the short-channel advantages of 2D-TMDs. Here, we demonstrate flexible monolayer MoS2 FETs with the shortest channels reported to date (down to 50 nm) and remarkably high on-current (up to 470 uA/um at 1 V drain-to-source voltage) which is comparable to flexible graphene or crystalline silicon FETs. This is achieved using a new transfer method wherein contacts are initially patterned on the rigid TMD growth substrate with nanoscale lithography, then coated with a polyimide (PI) film which becomes the flexible substrate after release, with the contacts and TMD. We also apply this transfer process to other TMDs, reporting the first flexible FETs with MoSe2 and record on-current for flexible WSe2 FETs. These achievements push 2D semiconductors closer to a technology for low-power and high-performance flexible electronics.

cond-mat.mtrl-sci↗