Amar Verma | Searcharxiv

arXiv2026

Tuning of superconducting properties with disorder in NbxSn nanocrystalline thin films

Nanocrystalline superconducting films offer an excellent platform to explore the interplay between disorder, granularity, and dimensionality. In this work, we investigate two series of NbxSn thin films with near-stoichiometric (x =3) and slightly Sn-rich (x =2.5) compositions, deposited on Si (100) substrates via DC magnetron sputtering. Both series exhibit nanocrystalline morphology, with the Sn-rich films displaying smaller grain sizes and a more granular microstructure. A suppression of the superconducting transition temperature (Tc) with decreasing film thickness is observed in both series. Notably, a disorder-driven crossover to an insulating state emerges, occurring at a thickness of approximately 11 nm for the Sn-rich films-about twice that of the stoichiometric films. The estimated disorder parameter (kFl=0.4) in the thinnest films indicates proximity to the Anderson localization regime for these films. Magneto-transport measurements reveal a thickness-driven 3D to 2D crossover, with its onset strongly dependent on film stoichiometry. Furthermore, a pronounced suppression of superfluid stiffness is observed in the Sn-rich films, corroborating the structure-property correlations identified in this study. This work highlights the role of stoichiometry controlled disorder in tuning superconductivity in granular NbxSn thin films.

cond-mat.supr-con↗

arXiv2025

Magnetoconductance evolution across the topological-trivial phase transition in ${In_{x}}({Bi_{0.3}}{Sb_{0.7}})_{2-x}{Te_3}$ thin films

We investigate the evolution of electronic transport across the topological-trivial phase transition in ${\rm In}_{x}({\rm Bi}_{0.3}{\rm Sb}_{0.7})_{2-x}{\rm Te}_3$ thin films by systematically tuning the indium concentration $x$. Increasing $x$ reduces the effective spin-orbit coupling, driving a topological quantum phase transition near $x \approx 7\%$, and at higher disorder a crossover from diffusive to strongly localized transport around $x \approx 15\%$. In the diffusive regime, the magnetoconductance is well described by the Hikami-Larkin-Nagaoka formalism, with the evolution of the WAL prefactor $\alpha$ correlating with the band-inversion transition. Beyond the diffusive limit, transport crosses into variable-range hopping, accompanied by a striking reversal of magnetoconductance from negative to positive. The observed positive low-field magnetoconductance, its pronounced anisotropy, and its temperature evolution point to an orbital origin of the response. These features are naturally captured by incorporating the incoherent hopping mechanism of Raikh \textit{et al.} together with wavefunction shrinkage, rather than by conventional quantum-correction frameworks. Our results provide a unified picture of how topology, spin-orbit coupling, and disorder collectively determine the full field-temperature magnetotransport landscape in this material class, establishing a clear experimental link between the topological phase transition and the onset of incoherent hopping-dominated conduction.

cond-mat.mtrl-sci↗