arXiv subjects

Amedeo Carbone

Publications and source records attributed to Amedeo Carbone.

3 recordsLinked to original sources

arXiv2026

Epitaxial single T centres in silicon-on-insulator

Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking. However, achieving coherent photon emission remains a primary challenge due to stringent material quality requirements. To overcome this, we utilise high-purity molecular-beam epitaxy (MBE) to epitaxially incorporate single T centres in silicon-on-insulator (SOI) wafers. We demonstrate single T-centre emission coupled to a nanophotonic waveguide and observe significant suppression of homogeneous broadening, yielding optical linewidths as narrow as 30 MHz using natural silicon for crystal growth. These results establish epitaxial T centres as a robust foundation for coherent spin-photon interfaces in silicon quantum photonics.

quant-ph↗

arXiv2025

Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride

We highlight recent advances in the controlled creation of single-photon emitters in van der Waals materials and in the understanding of their atomistic origin. We focus on quantum emitters created in monolayer transition-metal dichalcogenide semiconductors, which provide spectrally sharp single-photon emission at cryogenic temperatures, and the ones in insulating hBN, which provide bright and stable single-photon emission up to room temperature. After introducing the different classes of quantum emitters in terms of band-structure properties, we review the defect creation methods based on electron and ion irradiation as well as local strain engineering and plasma treatments. A main focus of the review is put on discussing the microscopic origin of the quantum emitters as revealed by various experimental platforms, including optical and scanning probe methods.

cond-mat.mes-hall↗

arXiv2025

Quantifying the creation of negatively charged boron vacancies in He-ion irradiated hexagonal boron nitride

Hexagonal boron nitride (hBN) hosts luminescent defects possessing spin qualities compatible with quantum sensing protocols at room temperature. Vacancies, in particular, are readily obtained via exposure to high-energy ion beams. While the defect creation mechanism via such irradiation is well understood, the occurrence rate of optically active negatively charged vacancies ($V_B^-$) is an open question. In this work, we exploit focused helium ions to systematically generate optically active vacancy defects in hBN flakes at varying density. By comparing the density-dependent spin splitting measured by magnetic resonance to calculations based on a microscopic charge model, in which we introduce a correction term due to a constant background charge, we are able to quantify the number of $V_B^-$ defects generated by the ion irradiation. We find a lower bound for the fraction (0.2%) of all vacancies in the optically active, negatively charged state. Our results provide a protocol for measuring the generation efficiency of $V_B^-$, which is necessary for understanding and optimizing luminescent centers in hBN.

cond-mat.mes-hall↗